JPH05299504A - Dicing method - Google Patents

Dicing method

Info

Publication number
JPH05299504A
JPH05299504A JP10635692A JP10635692A JPH05299504A JP H05299504 A JPH05299504 A JP H05299504A JP 10635692 A JP10635692 A JP 10635692A JP 10635692 A JP10635692 A JP 10635692A JP H05299504 A JPH05299504 A JP H05299504A
Authority
JP
Japan
Prior art keywords
adhesive sheet
semiconductor wafer
dicer
semiconductor
dicing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10635692A
Other languages
Japanese (ja)
Inventor
Tomohide Nishihata
智秀 西畑
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Semiconductor Manufacturing Co Ltd
Kansai Nippon Electric Co Ltd
Original Assignee
Renesas Semiconductor Manufacturing Co Ltd
Kansai Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Semiconductor Manufacturing Co Ltd, Kansai Nippon Electric Co Ltd filed Critical Renesas Semiconductor Manufacturing Co Ltd
Priority to JP10635692A priority Critical patent/JPH05299504A/en
Publication of JPH05299504A publication Critical patent/JPH05299504A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To decrease the irregularity in the remaining margin of each adhesive sheet as much as possible, and to sufficiently ensure the strength of the adhesive sheets. CONSTITUTION:When a semiconductor wafer 2 is diced, two thin adhesive sheets 11a and 11b are laminated;' and the semiconductor wafer 2, on which a number of semiconductor elements 1 are lattice-like formed, are stuck onto the upper side adhesive sheet 11a. In the above-mentioned state, the semiconductor wafer 2 is cut by a dicer 5 for each element 1, and the prescribed remaining margine (b) is left on the upper adhesive sheet 11a. When each semiconductor element 1 is going to be picked up after the dicing operation has been conducted, the lower adhesive sheet 11b is exfoliated, the upper adhesive sheet 11a is radially expanded toward outside, and then each semiconductor element 1 is picked up.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明はダイシング方法に関し、
詳しくは、半導体装置の製造において、半導体ウェーハ
を各素子ごとにダイサによる切り込みでもって分割する
ダイシング方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dicing method,
More specifically, the present invention relates to a dicing method for dividing a semiconductor wafer into individual elements by cutting with a dicer in the manufacture of semiconductor devices.

【0002】[0002]

【従来の技術】半導体装置は、多数の半導体素子を格子
状に形成した半導体ウェーハから一括して製造されるの
が一般的である。この半導体装置の製造では、上記半導
体ウェーハに多数の半導体素子を作り込んだ上で、その
半導体ウェーハを各素子ごとにダイサによる切り込みで
もって分割するようにしている。
2. Description of the Related Art A semiconductor device is generally manufactured collectively from a semiconductor wafer having a large number of semiconductor elements formed in a grid pattern. In the manufacture of this semiconductor device, a large number of semiconductor elements are formed on the semiconductor wafer, and then the semiconductor wafer is divided into individual elements by cutting with a dicer.

【0003】上記半導体ウェーハを各素子ごとに分割す
るダイシング方法の従来例を以下に説明する。
A conventional example of a dicing method for dividing the semiconductor wafer into each element will be described below.

【0004】まず、図4及び図5に示すように多数の半
導体素子(1)を作り込んだ半導体ウェーハ(2)を比較
的厚い粘着シート(3)上に貼着し、その粘着シート
(3)をステージ(4)上に真空吸着等により位置決め固
定した状態で、回転するダイサ(5)により半導体ウェ
ーハ(2)を格子状に切り込んで各素子(1)ごとに分割
する。この時、半導体ウェーハ(2)が粘着シート(3)
上に固着されているので、図6に示すように上記ダイサ
(5)により半導体ウェーハ(2)を完全に切断し、粘着
シート(3)を所定の残り代(a)を残存させた状態で切
り込む。
First, as shown in FIGS. 4 and 5, a semiconductor wafer (2) having a large number of semiconductor elements (1) is attached to a relatively thick adhesive sheet (3), and the adhesive sheet (3 ) Is positioned and fixed on the stage (4) by vacuum suction or the like, the semiconductor wafer (2) is cut into a lattice shape by a rotating dicer (5) and divided into each element (1). At this time, the semiconductor wafer (2) is attached to the adhesive sheet (3)
As shown in FIG. 6, the semiconductor wafer (2) is completely cut by the dicer (5) and the adhesive sheet (3) is left in a state where a predetermined remaining amount (a) is left, as shown in FIG. Cut in.

【0005】このダイシング後、上記粘着シート(3)
を外方に向けて放射状に展延させることにより引き延ば
し、各半導体素子(1)を分離して離隔配置した状態で
突き上げピン及び吸着コレットによりピックアップし、
粘着シート(3)から取り出してリードフレーム等にマ
ウントするようにしている。
After this dicing, the above-mentioned pressure-sensitive adhesive sheet (3)
Is extended by radially spreading outward, and each semiconductor element (1) is separated and spaced apart and picked up by a push-up pin and a suction collet,
It is taken out from the adhesive sheet (3) and mounted on a lead frame or the like.

【0006】[0006]

【発明が解決しようとする課題】ところで、上述したダ
イシングで使用される粘着シート(3)は比較的厚いた
め、粘着シート(3)の厚みのばらつきが大きく、ダイ
サ(5)の切り込みによる粘着シート(3)の残り代
(a)のばらつきも大きくなる。このように粘着シート
(3)ごとに残り代(a)のばらつきが大きいと、ダイシ
ング後のピックアップ時、粘着シート(3)ごとでその
引き延ばし状態が異なってくることになり、ピックアッ
プ動作がスムーズに行なえず、而も、上記粘着シート
(3)が厚いと、ピックアップ時に粘着シート(3)を放
射状に展延させることにより引き延ばすことが困難であ
るという問題があった。
By the way, since the pressure-sensitive adhesive sheet (3) used in the above-mentioned dicing is relatively thick, the thickness of the pressure-sensitive adhesive sheet (3) varies widely, and the pressure-sensitive adhesive sheet formed by cutting the dicer (5). The variation of the remaining cost (a) in (3) also increases. If the residual amount (a) varies widely among the adhesive sheets (3) in this way, the stretched state will differ for each adhesive sheet (3) during pick-up after dicing, and the pick-up operation will be smooth. However, if the pressure-sensitive adhesive sheet (3) is thick, it is difficult to stretch the pressure-sensitive adhesive sheet (3) by radially spreading it when picking up.

【0007】ここで、上記粘着シートに薄いものを使用
することも考えられるが、ダイサによる切り込み時に粘
着シートの粘着力でもって、移動するダイサに引きづら
れて薄い粘着シートが持ち上げられ、それにより半導体
素子同士が当たって欠けが生じたり、半導体素子が飛散
する虞があるため、薄い粘着シートでは強度的に弱く、
良好なダイシングを行なえないという問題があった。
Here, it is possible to use a thin adhesive sheet, but the adhesive force of the adhesive sheet during cutting by the dicer causes the thin adhesive sheet to be lifted up by being pulled by the moving dicer. There is a risk that the semiconductor elements may hit each other to cause chipping, or the semiconductor elements may scatter, so the strength is weak with a thin adhesive sheet,
There is a problem that good dicing cannot be performed.

【0008】そこで、本発明は上記問題点に鑑みて提案
されたもので、その目的とするところは、粘着シートご
とで残り代がばらつくことを可及的に小さくすると共に
粘着シートの強度を充分に確保し得るダイシング方法を
提供することにある。
Therefore, the present invention has been proposed in view of the above problems, and an object of the present invention is to minimize the variation of the remaining amount of each adhesive sheet and to make the adhesive sheet sufficiently strong. It is to provide a dicing method which can be secured.

【0009】[0009]

【課題を解決するための手段】上記目的を達成するため
の技術的手段として、本発明は、粘着シート上に貼着し
た半導体ウェーハを各素子ごとにダイサによる切り込み
でもって上記粘着シートに所定の残り代を保持した状態
で分割するに際して、複数枚の薄い粘着シートを貼り合
わせた上に半導体ウェーハを貼着し、その状態で半導体
ウェーハを各素子ごとにダイサにより切削して半導体ウ
ェーハ直下の粘着シートに所定の残り代を残存させ、そ
の後、半導体ウェーハ直下の粘着シート以外の粘着シー
トを剥離するようにしたことを特徴とする。
As a technical means for achieving the above object, the present invention provides a semiconductor wafer adhered on an adhesive sheet with a predetermined dicing for each element by cutting with a dicer for each element. When dividing while maintaining the remaining margin, a plurality of thin adhesive sheets are pasted together and a semiconductor wafer is pasted, and in that state the semiconductor wafer is cut by a dicer for each element and the adhesive just under the semiconductor wafer is cut. The sheet is characterized in that a predetermined remaining amount is left on the sheet, and then the adhesive sheet other than the adhesive sheet directly below the semiconductor wafer is peeled off.

【0010】[0010]

【作用】本発明方法では、薄い粘着シートを複数枚貼り
合わせることにより、薄い粘着シートの厚みのばらつき
が小さいので、複数枚貼り合わせた粘着シート全体の厚
みのばらつきも小さくなるため、ダイシング時、ダイサ
による切り込みでもって粘着シートに残存する残り代の
ばらつきを小さくすることが可能となる。また、上記ダ
イシング時には複数枚の粘着シートを貼り合わせた状態
にあるため、ダイサによる切り込みに対して充分な強度
を確保できる。
In the method of the present invention, since a plurality of thin pressure-sensitive adhesive sheets are laminated together, the thickness variation of the thin pressure-sensitive adhesive sheets is small. It is possible to reduce variations in the remaining amount remaining on the adhesive sheet by cutting with the dicer. In addition, since a plurality of pressure-sensitive adhesive sheets are stuck together during the dicing, sufficient strength can be secured against cutting by the dicer.

【0011】そして、ダイシング後のピックアップ時に
は、半導体ウェーハ直下の粘着シート以外の粘着シート
を剥離して、薄い粘着シート一枚だけを展延させるの
で、その展延による引き延ばしが容易となる。
At the time of picking up after dicing, the adhesive sheets other than the adhesive sheet immediately below the semiconductor wafer are peeled off and only one thin adhesive sheet is spread, so that the spreading due to the spreading becomes easy.

【0012】[0012]

【実施例】本発明に係るダイシング方法の実施例を図1
乃至図3に示して説明する。尚、図4乃至図6と同一又
は相当部分には同一参照符号を付して重複説明は省略す
る。
FIG. 1 shows an embodiment of a dicing method according to the present invention.
3 and 4 will be described. The same or corresponding parts as those in FIGS. 4 to 6 are designated by the same reference numerals, and the duplicated description will be omitted.

【0013】本発明方法では、図1に示すように半導体
装置の製造におけるダイシング時、複数枚〔図では二
枚〕の薄い粘着シート(11a)(11b)を貼り合わせ、そ
の最上層にある粘着シート(11a)上に、多数の半導体
素子(1)を格子状に形成した半導体ウェーハ(2)を貼
着し、その状態で半導体ウェーハ(2)を各素子(1)ご
とにダイサ(5)により切削し、図2に示すように半導
体ウェーハ(2)直下の粘着シート(3)に所定の残り代
(b)を残存させる。
In the method of the present invention, as shown in FIG. 1, during dicing in the manufacture of a semiconductor device, a plurality of (two in the figure) thin adhesive sheets (11a) and (11b) are bonded together, and the adhesive layer on the uppermost layer is adhered. A semiconductor wafer (2) having a large number of semiconductor elements (1) formed in a grid pattern is attached to a sheet (11a), and in that state the semiconductor wafer (2) is diced (5) for each element (1). Then, the adhesive sheet (3) immediately below the semiconductor wafer (2) is left with a predetermined remaining amount (b) as shown in FIG.

【0014】ここで、上記粘着シート(11a)(11b)が
薄いため、その厚みのばらつきが小さく、例えば、薄い
粘着シート(11a)(11b)を二枚貼り合わせた場合、そ
の二枚分と同等の厚みを有する厚い粘着シートと比較す
ると、その厚い粘着シートの厚みのばらつきの半分より
も小さい。従って、薄い粘着シート(11a)(11b)を二
枚貼り合わせた場合、従来のように厚い粘着シートと同
等の全体的な厚みを有するが、その厚みのばらつきが小
さくなっているため、上記ダイサ(5)による切り込み
によって残存した粘着シート(11a)での残り代(b)の
ばらつきを可及的に小さくすることが可能である。ま
た、このダイシング時での粘着シート(11a)(11b)全
体の厚みが大きいので、ダイサ(5)の切り込みに対し
て充分な強度を確保でき、その粘着力により、移動する
ダイサ(5)に引きづられて粘着シート(11a)(11b)
が持ち上げられることもない。
Here, since the pressure-sensitive adhesive sheets (11a) (11b) are thin, variations in the thickness are small. For example, when two thin pressure-sensitive adhesive sheets (11a) (11b) are pasted, When compared with a thick PSA sheet having an equivalent thickness, it is less than half the thickness variation of the thick PSA sheet. Therefore, when two thin adhesive sheets (11a) and (11b) are laminated together, they have the same overall thickness as a conventional thick adhesive sheet, but the thickness variation is small, so It is possible to reduce the variation of the remaining margin (b) in the adhesive sheet (11a) remaining due to the cut by (5) as much as possible. Also, since the entire thickness of the adhesive sheet (11a) (11b) at the time of this dicing is large, sufficient strength can be secured against the cut of the dicer (5), and the adhesive force enables the dicer (5) to move. Tucked adhesive sheet (11a) (11b)
Cannot be lifted.

【0015】一方、上記ダイシング後、図3に示すよう
に半導体ウェーハ(2)直下の粘着シート(11a)以外の
粘着シート、即ち、最下層の粘着シート(11b)を剥離
した上で、粘着シート(11a)を外方に向けて放射状に
展延させることにより引き延ばし、各半導体素子(1)
を分離して離隔配置した状態で突き上げピン及び吸着コ
レットによりピックアップし、粘着シート(11a)から
取り出してリードフレーム等にマウントする。
On the other hand, after the above dicing, as shown in FIG. 3, the pressure-sensitive adhesive sheet other than the pressure-sensitive adhesive sheet (11a) directly below the semiconductor wafer (2), that is, the pressure-sensitive adhesive sheet (11b) of the lowermost layer is peeled off, and then the pressure-sensitive adhesive sheet. Each semiconductor element (1) is stretched by radially spreading (11a) outward.
In a state where they are separated and arranged separately, they are picked up by a push-up pin and a suction collet, taken out from the adhesive sheet (11a) and mounted on a lead frame or the like.

【0016】このピックアップ時、薄い粘着シート(11
a)が一枚だけであるので、展延による引き延ばしが容
易であり、而も、上述したように粘着シート(11a)で
の残り代(b)がシートごとにばらつくことなく均一で
あるため、その引き延ばし状態が異なることなく、ピッ
クアップ動作をスムーズに行なうことができる。
At the time of this pickup, a thin adhesive sheet (11
Since a) is only one sheet, it is easy to stretch it by spreading, and as described above, the remaining amount (b) of the adhesive sheet (11a) is uniform without variation among the sheets, The picking-up operation can be performed smoothly without any difference in the extended state.

【0017】[0017]

【発明の効果】本発明に係るダイシング方法によれば、
ダイシング時、粘着シートでの残り代をそのシートごと
に均一にすることができ、上記ダイシング後のピックア
ップ時、粘着シートの展延による引き延ばし状態を均一
化でき、スムーズなピックアップ動作を実行することが
可能となる。また、上記ダイシング時には複数枚の粘着
シートを貼り合わせているので、ダイサの切り込みに対
して充分な強度を確保することができ、上記ピックアッ
プ時には、薄い粘着シートだけであるので、その粘着シ
ートの引き延ばしも非常に容易である。従って、上記ダ
イシング及びピックアップにおける作業性及び歩留まり
が大幅に向上すると共に良品質の半導体装置を提供する
ことが実現容易となる。
According to the dicing method of the present invention,
At the time of dicing, the remaining amount of the adhesive sheet can be made uniform for each sheet, and at the time of pickup after the above dicing, the stretched state due to the spreading of the adhesive sheet can be made uniform and a smooth pickup operation can be performed. It will be possible. Further, since a plurality of adhesive sheets are attached at the time of dicing, it is possible to secure sufficient strength against the cut of the dicer, and at the time of pickup, since only a thin adhesive sheet is used, the extension of the adhesive sheet is possible. Is also very easy. Therefore, the workability and the yield in the dicing and the pickup are significantly improved, and it becomes easy to provide a good quality semiconductor device.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明方法の実施例を示す粘着シート及び半導
体ウェーハとダイサの側面図
FIG. 1 is a side view of an adhesive sheet, a semiconductor wafer and a dicer showing an embodiment of the method of the present invention.

【図2】ダイサによる半導体ウェーハ及び粘着シートの
切り込み状態を示す部分拡大断面図
FIG. 2 is a partially enlarged sectional view showing a cut state of a semiconductor wafer and an adhesive sheet by a dicer.

【図3】ダイシング後のピックアップ時に最下層の粘着
シートを剥離した状態を示す部分拡大断面図
FIG. 3 is a partially enlarged cross-sectional view showing a state in which the lowermost pressure-sensitive adhesive sheet is peeled off during pick-up after dicing.

【図4】ダイシング方法の従来例を示す粘着シート及び
半導体ウェーハとダイサの平面図
FIG. 4 is a plan view of an adhesive sheet, a semiconductor wafer, and a dicer showing a conventional example of a dicing method.

【図5】図4の側面図5 is a side view of FIG.

【図6】ダイサによる半導体ウェーハ及び粘着シートの
切り込み状態を示す部分拡大断面図
FIG. 6 is a partially enlarged sectional view showing a cut state of a semiconductor wafer and an adhesive sheet by a dicer.

【符号の説明】[Explanation of symbols]

1 半導体素子 2 半導体ウェーハ 5 ダイサ 11a、11b 粘着シート b 残り代 1 Semiconductor element 2 Semiconductor wafer 5 Dicer 11a, 11b Adhesive sheet b Remaining cost

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 粘着シート上に貼着した半導体ウェーハ
を各素子ごとにダイサによる切り込みでもって上記粘着
シートに所定の残り代を保持した状態で分割するに際し
て、 複数枚の薄い粘着シートを貼り合わせた上に半導体ウェ
ーハを貼着し、その状態で半導体ウェーハを各素子ごと
にダイサにより切削して半導体ウェーハ直下の粘着シー
トに所定の残り代を残存させ、その後、半導体ウェーハ
直下の粘着シート以外の粘着シートを剥離するようにし
たことを特徴とするダイシング方法。
1. A plurality of thin adhesive sheets are attached to each other when a semiconductor wafer adhered on the adhesive sheet is divided into each element by cutting with a dicer while maintaining a predetermined remaining amount on the adhesive sheet. Affix the semiconductor wafer on top of it, and in that state cut the semiconductor wafer for each element with a dicer to leave a predetermined remaining margin on the adhesive sheet directly under the semiconductor wafer, and thereafter, except for the adhesive sheet directly under the semiconductor wafer. A dicing method, characterized in that an adhesive sheet is peeled off.
JP10635692A 1992-04-24 1992-04-24 Dicing method Pending JPH05299504A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10635692A JPH05299504A (en) 1992-04-24 1992-04-24 Dicing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10635692A JPH05299504A (en) 1992-04-24 1992-04-24 Dicing method

Publications (1)

Publication Number Publication Date
JPH05299504A true JPH05299504A (en) 1993-11-12

Family

ID=14431486

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10635692A Pending JPH05299504A (en) 1992-04-24 1992-04-24 Dicing method

Country Status (1)

Country Link
JP (1) JPH05299504A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0860873A1 (en) * 1997-02-24 1998-08-26 LINTEC Corporation Adhesive sheet for wafer setting and process for producing electronic component

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0860873A1 (en) * 1997-02-24 1998-08-26 LINTEC Corporation Adhesive sheet for wafer setting and process for producing electronic component

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