JPH05299494A - Electrostatic attracting apparatus - Google Patents
Electrostatic attracting apparatusInfo
- Publication number
- JPH05299494A JPH05299494A JP10316192A JP10316192A JPH05299494A JP H05299494 A JPH05299494 A JP H05299494A JP 10316192 A JP10316192 A JP 10316192A JP 10316192 A JP10316192 A JP 10316192A JP H05299494 A JPH05299494 A JP H05299494A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- wafer
- electrode
- electrostatic
- area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、静電吸着装置に係り、
プラズマＣＶＤ、プラズマエッチング等の処理部に用い
られる静電吸着装置に適用することができ、特に、ウェ
ーハと高周波印加電極間の静電容量を大きくしてイオン
のウェーハへの入射効率を高めることができる静電吸着
装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrostatic attraction device,
It can be applied to an electrostatic adsorption device used in a processing unit such as plasma CVD and plasma etching, and in particular, it can increase the electrostatic capacitance between the wafer and the high frequency applying electrode to increase the incidence efficiency of ions on the wafer. The present invention relates to an electrostatic adsorption device that can
【０００２】近年、半導体製造工程等で、絶縁膜や導電
膜等の各膜の加工工程で用いられるプラズマＣＶＤ、プ
ラズマエッチング、スパッタエッチング、反応性スパッ
タエッチング、ＥＣＲ、ＣＶＤ、ＥＣＲ エッチング等
の処理における処理部に静電吸着装置を用いることは、
プロセスの重要な制御要因である温度制御のために重要
な技術となってきつつある。In recent years, in processes such as plasma CVD, plasma etching, sputter etching, reactive sputter etching, ECR, CVD and ECR etching used in the process of processing each film such as an insulating film and a conductive film in a semiconductor manufacturing process or the like. Using an electrostatic adsorption device in the processing section
It is becoming an important technology for temperature control, which is an important control factor of the process.
【０００３】[0003]
【従来の技術】従来の半導体製造に用いられる静電吸着
装置においては、カプリングコンデンサーを介してＲＦ
電源が接続されたＲＦ電極上に絶縁膜が形成され、この
絶縁膜上にＲＦフィルターが接続された静電吸着電極が
形成され、この静電吸着電極上に絶縁膜が形成され、こ
の絶縁膜上にウェーハが静電吸着されてなるものが知ら
れている。この静電吸着装置はウェーハの平面度を矯正
するとともに、真空中での熱伝達を行う方法として用い
られていた。このため、静電吸着電極とウェーハ間の絶
縁膜について、絶縁耐圧がもつかぎり薄くする等して吸
着力を大きくする工夫がなされてきた。2. Description of the Related Art In a conventional electrostatic chucking device used for semiconductor manufacturing, RF is passed through a coupling capacitor.
An insulating film is formed on the RF electrode to which the power source is connected, an electrostatic adsorption electrode to which an RF filter is connected is formed on the insulating film, and an insulating film is formed on the electrostatic adsorption electrode. It is known that a wafer is electrostatically adsorbed on the wafer. This electrostatic adsorption device has been used as a method of correcting the flatness of a wafer and performing heat transfer in a vacuum. For this reason, the insulating film between the electrostatic attraction electrode and the wafer has been devised so that the attraction force is increased by reducing the withstand voltage as much as possible.
【０００４】[0004]
【発明が解決しようとする課題】上記したように、従来
の静電吸着装置では、静電吸着電極上に形成された絶縁
膜表面にウェーハを静電吸着するのを、ウェーハと静電
吸着電極間の絶縁膜を薄くする等規定して行っていたた
め、十分な静電吸着力でウェーハを絶縁膜表面に静電吸
着することができるという利点を有する。このため、静
電吸着電極と高周波印加電極との間の絶縁膜については
考慮されていず、この絶縁膜の静電容量は考慮されてい
なかった。このため、静電吸着電極と高周波印加電極と
の間の絶縁膜の厚さを機械的強度が十分となるように厚
く（３ｍｍ以上）すると、プラズマのセルフバイアス電
圧の低下を招き、反応性スパッタエッチング処理等では
処理の異方性の低下、処理速度の低下という問題が発生
した。As described above, in the conventional electrostatic attraction device, the wafer and the electrostatic attraction electrode are used to electrostatically attract the wafer to the surface of the insulating film formed on the electrostatic attraction electrode. Since the insulating film between them is specified to be thin, it has an advantage that the wafer can be electrostatically attracted to the surface of the insulating film with a sufficient electrostatic attraction force. Therefore, the insulating film between the electrostatic attraction electrode and the high frequency applying electrode is not considered, and the capacitance of this insulating film is not considered. Therefore, if the thickness of the insulating film between the electrostatic attraction electrode and the high-frequency applying electrode is made thick enough (3 mm or more) so that the mechanical strength is sufficient, the self-bias voltage of the plasma is lowered and the reactive sputtering is caused. In the etching process and the like, problems such as a decrease in process anisotropy and a decrease in process speed have occurred.
【０００５】そこで、本発明は、ウェーハと高周波印加
電極間の静電容量を大きくしてプラズマのセルフバイア
ス電位を高めることができ、イオンのウェーハへの入射
効率を高めてウェーハの処理効率を向上させることがで
きる静電吸着装置を提供することを目的としている。Therefore, according to the present invention, the electrostatic capacity between the wafer and the high frequency applying electrode can be increased to increase the self-bias potential of plasma, and the efficiency of incidence of ions on the wafer can be increased to improve the processing efficiency of the wafer. It is an object of the present invention to provide an electrostatic attraction device that can be used.
【０００６】[0006]
【課題を解決するための手段】本発明による静電吸着装
置は上記目的達成のため、高周波印加電極上に第１の絶
縁膜が形成され、該第１の絶縁膜上に静電吸着電極が形
成され、該静電吸着電極上に第２の絶縁膜が形成され、
該第２の絶縁膜上にウェーハが静電吸着されてなる静電
吸着装置において、該高周波印加電極と該静電吸着電極
間の該第１の絶縁膜の膜厚を0.1 ｍｍ以上１ｍｍ以下に
するか、あるいは該第１の絶縁膜の比誘電率を３以上に
するか、あるいは該第１の絶縁膜の面積を該ウェーハ面
積の80％以上にするか、若しくは該第１の絶縁膜の比抵
抗を1012Ωｃｍ以下にするものである。In order to achieve the above object, an electrostatic chucking device according to the present invention has a first insulating film formed on a high frequency applying electrode, and an electrostatic chucking electrode is formed on the first insulating film. And a second insulating film is formed on the electrostatic attraction electrode,
In an electrostatic chucking device in which a wafer is electrostatically chucked on the second insulating film, the film thickness of the first insulating film between the high frequency applying electrode and the electrostatic chucking electrode is 0.1 mm or more and 1 mm or less. Or the relative dielectric constant of the first insulating film is 3 or more, or the area of the first insulating film is 80% or more of the wafer area, or The specific resistance is set to 10 12 Ωcm or less.
【０００７】本発明においては、前記ウェーハと前記静
電吸着電極間の前記第２の絶縁膜の膜厚を0.1 ｍｍ以上
１ｍｍ以下にするか、あるいは該第２の絶縁膜の比誘電
率を３以上にするか、あるいは該第２の絶縁膜の面積を
該ウェーハ面積の80％以上にするか、若しくは該第２の
絶縁膜の比抵抗を1012Ωｃｍ以下にする場合であっても
よく、この場合、本発明の効果を効率良く得ることがで
きる他、静電チェックの吸着力も十分得ることができ
る。In the present invention, the film thickness of the second insulating film between the wafer and the electrostatic attraction electrode is set to 0.1 mm or more and 1 mm or less, or the relative dielectric constant of the second insulating film is set to 3 mm. Or more, or the area of the second insulating film may be 80% or more of the wafer area, or the specific resistance of the second insulating film may be 10 12 Ωcm or less, In this case, the effect of the present invention can be efficiently obtained, and also the electrostatic check suction force can be sufficiently obtained.
【０００８】本発明においては、２極式静電吸着装置に
好ましく適用させることができる。本発明による静電吸
着装置は上記目的達成のため、静電吸着電極を兼ねた高
周波印加電極上に絶縁膜が形成され、該絶縁膜上にウェ
ーハが静電吸着されてなる静電吸着装置において、該静
電吸着電極を兼ねた高周波印加電極と該ウェーハ間の該
絶縁膜の膜厚を0.1 ｍｍ以上１ｍｍ以下にするか、ある
いは該絶縁膜の比誘電率を３以上にするか、あるいは該
絶縁膜の面積を該ウェーハ面積の80％以上にするか、若
しくは該絶縁膜の比抵抗を1012Ωｃｍ以下にするもので
ある。The present invention can be preferably applied to a two-pole type electrostatic adsorption device. In order to achieve the above object, the electrostatic chucking device according to the present invention is an electrostatic chucking device in which an insulating film is formed on a high-frequency applying electrode that also serves as an electrostatic chucking electrode, and a wafer is electrostatically chucked on the insulating film. , The thickness of the insulating film between the high frequency applying electrode also serving as the electrostatic attraction electrode and the wafer is 0.1 mm or more and 1 mm or less, or the relative dielectric constant of the insulating film is 3 or more, or The area of the insulating film is 80% or more of the wafer area, or the specific resistance of the insulating film is 10 12 Ωcm or less.
【０００９】本発明において、膜厚の下限を0.1 ｍｍと
したのは、0.1 ｍｍより小さくすると、絶縁性能が著し
く劣ってしまい実用上好ましくないからであり、膜厚の
上限を１ｍｍとしたのは、１ｍｍより大きくすると、ウ
ェーハとＲＦ電極間の静電容量が小さくなって実用上好
ましくないからである。また、比誘電率の上限を３とし
たのは、３より小さくすると、ウェーハとＲＦ電極間の
静電容量が小さくなって実用上好ましくないからであ
り、また面積をウェーハ面積の80％以上にしたのは、80
％より小さくすると、ウェーハとＲＦ電極間の静電容量
が小さくなって実用上好ましくないからである。なお、
面積はウェーハ面積の100 ％以下が好ましく、この場
合、絶縁膜が（スパッタ等）処理されることなくウェー
ハのみを処理することができる。比抵抗の上限を1012Ω
ｃｍとしたのは、1012Ωｃｍより大きくすると、ウェー
ハとＲＦ電極間の結合容量が小さくなって実用上好まし
くないからである。In the present invention, the lower limit of the film thickness is set to 0.1 mm, because if it is smaller than 0.1 mm, the insulation performance is remarkably deteriorated and it is not preferable in practical use. Therefore, the upper limit of the film thickness is set to 1 mm. If it is larger than 1 mm, the electrostatic capacitance between the wafer and the RF electrode becomes small, which is not preferable for practical use. The upper limit of the relative permittivity is set to 3 because if it is smaller than 3, the electrostatic capacity between the wafer and the RF electrode becomes small, which is not preferable in practical use, and the area is set to 80% or more of the wafer area. I did 80
If it is smaller than%, the electrostatic capacity between the wafer and the RF electrode becomes small, which is not preferable in practical use. In addition,
The area is preferably 100% or less of the wafer area. In this case, only the wafer can be processed without processing the insulating film (such as sputtering). The upper limit of resistivity is 10 12 Ω
The reason why it is set to cm is that if it is larger than 10 12 Ωcm, the coupling capacitance between the wafer and the RF electrode becomes small, which is not preferable in practical use.
【００１０】[0010]
【作用】図１は本発明の原理説明図のための静電吸着装
置の構成を示す断面図である。図１において、１はカプ
リングコンデンサー２を介してＲＦ電源３と接続された
ＲＦ電極であり、４はこのＲＦ電極１上に形成された絶
縁膜であり、５はこの絶縁膜４上に形成されたＲＦフィ
ルター６と接続された一極式の静電吸着電極であり、７
はこの静電吸着電極５上に形成された絶縁膜であり、８
はこの絶縁膜７上に静電吸着されるウェーハである。FIG. 1 is a sectional view showing the structure of an electrostatic attraction device for explaining the principle of the present invention. In FIG. 1, 1 is an RF electrode connected to an RF power source 3 via a coupling capacitor 2, 4 is an insulating film formed on the RF electrode 1, and 5 is an insulating film formed on the insulating film 4. Is a one-pole type electrostatic adsorption electrode connected to the RF filter 6 and
Is an insulating film formed on the electrostatic attraction electrode 5, and 8
Is a wafer electrostatically adsorbed on the insulating film 7.
【００１１】図１に示す式から判るように、静電チェ
ックの吸着力Ｆは静電吸着電極５とウェーハ８間の絶縁
膜７の厚さ（距離ｄａ）を適宜小さくすることにより大
きくすることができる。また、式から判るように、
ウェーハ８のＲＦ結合容量Ｃはウェーハ８とＲＦ電極１
間の静電容量Ｃｗを大きくすることにより大きくするこ
とができ、この静電容量ＣｗはＲＦ電極１と静電吸着電
極５間の絶縁膜４の厚さ（距離ｄｂ）を薄くするか、あ
るいは比誘電率εを高くするか、若しくは面積Ｓを広く
とることにより大きくすることができる。As can be seen from the equation shown in FIG. 1, the attraction force F of the electrostatic check is increased by appropriately reducing the thickness (distance da) of the insulating film 7 between the electrostatic attraction electrode 5 and the wafer 8. You can Also, as you can see from the formula,
The RF coupling capacitance C of the wafer 8 is the wafer 8 and the RF electrode 1
The capacitance Cw can be increased by increasing the capacitance Cw between them. This capacitance Cw reduces the thickness (distance db) of the insulating film 4 between the RF electrode 1 and the electrostatic adsorption electrode 5, or It can be increased by increasing the relative permittivity ε or increasing the area S.
【００１２】そこで、本発明では、静電吸着装置の静電
吸着電極５とＲＦ電極１の間の絶縁膜４の膜厚（0.1 ｍ
ｍ以上１ｍｍ以下）を薄くするか、あるいは絶縁膜４の
比誘電率（３以上）を高くするか、あるいは絶縁膜４の
面積（ウェーハ８面積の80％以上）を広くとるか、若し
くは絶縁膜４の比抵抗（1012Ωｃｍ以下）を低くするよ
うに構成したため、ウェーハ８とＲＦ電極１間の静電容
量Ｃｗを大きくすることができる。このため、プラズマ
のセルフバイアス電位を高めることができ、イオンのウ
ェーハ８への入射効率を高めてウェーハ８の処理効率を
向上させることができる。これについては図面を用いて
具体的に説明する。なお、ここでは絶縁膜４と絶縁膜７
のトータル膜厚（ＲＦ電極１とウェーハ８間の距離ｄａ
＋ｄｂ）を振っている場合を示しているが、式から判
るように少なくとも絶縁膜４の膜厚（距離ｄａ）を小さ
くすれば本発明の効果を得ることができる。Therefore, in the present invention, the film thickness (0.1 m) of the insulating film 4 between the electrostatic attraction electrode 5 and the RF electrode 1 of the electrostatic attraction device.
m or more and 1 mm or less), or increase the relative dielectric constant of the insulating film 4 (3 or more), or increase the area of the insulating film 4 (80% or more of the area of the wafer 8), or the insulating film Since the specific resistance of No. 4 (10 12 Ωcm or less) is reduced, the electrostatic capacitance Cw between the wafer 8 and the RF electrode 1 can be increased. Therefore, the self-bias potential of plasma can be increased, the efficiency of incidence of ions on the wafer 8 can be increased, and the processing efficiency of the wafer 8 can be improved. This will be specifically described with reference to the drawings. In addition, here, the insulating film 4 and the insulating film 7
Total film thickness (distance between RF electrode 1 and wafer 8 da
Although the case where + db) is shaken is shown, the effect of the present invention can be obtained by reducing at least the film thickness (distance da) of the insulating film 4 as can be seen from the equation.
【００１３】本発明では、図２に示す様に、ウェーハ８
とＲＦ電極１間の絶縁膜４、７の厚さを薄くすると、Ｒ
Ｆ電極１とウェーハ８間の静電容量Ｃｗを増加させるこ
とができるのが判る。これに伴い、ＲＦのカプリングコ
ンデンサーとの合成容量Ｃも図３に示すように増加させ
ることができる。そして、これに伴い、図４に示すよう
に、ウェーハのＲＦバイアス電位も高くすることがで
き、イオンのウェーハへの入射効率を高くすることがで
きる。更に、図５に示すように、エッチングレートを大
きくすることができる。なお、図５はＳｉＯ2 の反応性
スパッタエッチングにおけるエッチングレートを示す図
である。In the present invention, as shown in FIG.
When the thickness of the insulating films 4 and 7 between the RF electrode 1 and the RF electrode 1 is reduced, R
It can be seen that the electrostatic capacitance Cw between the F electrode 1 and the wafer 8 can be increased. Along with this, the combined capacitance C of the RF with the coupling capacitor can also be increased as shown in FIG. Along with this, as shown in FIG. 4, the RF bias potential of the wafer can also be increased, and the incidence efficiency of ions on the wafer can be increased. Further, as shown in FIG. 5, the etching rate can be increased. FIG. 5 is a diagram showing the etching rate in the reactive sputter etching of SiO 2 .
【００１４】[0014]
【実施例】以下、本発明を図面に基づいて説明する。 （実施例１）図６は、本発明の実施例１に則した静電吸
着装置の構造を示す断面図であり、ここでは一極式の静
電吸着装置を示している。図６において、図１と同一符
号は同一または担当部分を示す。本実施例では、静電吸
着装置の静電吸着電極５とＲＦ電極１間の絶縁膜４の膜
厚と、静電吸着電極５とウェーハ８間の絶縁膜７の膜厚
を各々0.3ｍｍにして構成する。このため、前述の如く
静電チェックの吸着力を十分とった状態でウェーハ８と
ＲＦ電極１間の静電容量を大きくすることができ、プラ
ズマのセルフバイアス電位を高めることができる。従っ
て、イオンのウェーハ８への入射効率を高めてウェーハ
８の処理効率を向上させることができる。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the drawings. (Embodiment 1) FIG. 6 is a sectional view showing the structure of an electrostatic chucking device according to the first embodiment of the present invention, in which a one-pole type electrostatic chucking device is shown. 6, the same reference numerals as those in FIG. 1 indicate the same or responsible parts. In this embodiment, the thickness of the insulating film 4 between the electrostatic attraction electrode 5 and the RF electrode 1 of the electrostatic attraction device and the thickness of the insulating film 7 between the electrostatic attraction electrode 5 and the wafer 8 are set to 0.3 mm, respectively. Configure. Therefore, as described above, the electrostatic capacitance between the wafer 8 and the RF electrode 1 can be increased while the electrostatic check attraction force is sufficient, and the plasma self-bias potential can be increased. Therefore, the efficiency of incidence of ions on the wafer 8 can be increased and the processing efficiency of the wafer 8 can be improved.
【００１５】なお、実施例１では、絶縁膜４、７の膜厚
を小さくしてＲＦ電極１とウェーハ８間の静電容量を大
きくする場合について説明したが、本発明においては、
絶縁膜４、７の比誘電率（３以上）を大きくする場合
や、絶縁膜４、７面積を（ウェーハ８面積に対して80％
以上）を広くする場合、あるいは絶縁膜４、７の比抵抗
（1012Ωｃｍ以下）を小さくする場合であってもよい。 （実施例２）図７は本発明の実施例２に則した静電吸着
装置の構造を示す断面図であり、ここでは２極式の静電
吸着装置を示している。図７において、図１、６と同一
符号は同一または相当部分を示す。本実施例は２極式の
静電吸着電極５を用いて構成した場合であり、実施例１
と同様に静電吸着電極５とＲＦ電極１間の絶縁膜４の膜
厚と、静電吸着電極５とウェーハ８間の絶縁膜７の膜厚
とを各々0.3ｍｍにして構成する。このため、前述の如
く静電チェックの吸着力を十分とった状態でウェーハ８
をＲＦ電極１間の静電容量を大きくすることができ、プ
ラズマのセルフバイアス電位を高めることができる。従
って、イオンのウェーハ８への入射効率を高めてウェー
ハ８の処理効率を向上させることができる。In the first embodiment, the case where the film thickness of the insulating films 4 and 7 is reduced to increase the electrostatic capacitance between the RF electrode 1 and the wafer 8 has been described.
When increasing the relative dielectric constant (3 or more) of the insulating films 4 and 7, the area of the insulating films 4 and 7 (80% relative to the area of the wafer 8%
The above may be widened or the specific resistance (10 12 Ωcm or less) of the insulating films 4 and 7 may be reduced. (Embodiment 2) FIG. 7 is a sectional view showing the structure of an electrostatic chucking device according to a second embodiment of the present invention, in which a two-pole type electrostatic chucking device is shown. 7, the same reference numerals as those in FIGS. 1 and 6 denote the same or corresponding parts. The present embodiment is a case where the electrostatic attraction electrode 5 of the two-pole type is used.
Similarly, the thickness of the insulating film 4 between the electrostatic attraction electrode 5 and the RF electrode 1 and the thickness of the insulating film 7 between the electrostatic attraction electrode 5 and the wafer 8 are each set to 0.3 mm. For this reason, as described above, the wafer 8 is kept in a state where the electrostatic check has a sufficient suction force.
The capacitance between the RF electrodes 1 can be increased, and the self-bias potential of plasma can be increased. Therefore, the efficiency of incidence of ions on the wafer 8 can be increased and the processing efficiency of the wafer 8 can be improved.
【００１６】なお、実施例２では、絶縁膜４、７の膜厚
を小さくしてＲＦ電極１とウェーハ８間の静電容量を大
きくする場合について説明したが、本発明においては、
絶縁膜４、７の比誘電率（３以上）を大きくする場合
や、絶縁膜４、７面積（ウェーハ８面積に対して80％以
上）を広くする場合、あるいは絶縁膜４、７の比抵抗を
（1012Ωｃｍ以下）を小さくする場合であってもよい。 （実施例３）図８は、本発明の実施例３に則した静電吸
着装置の構造を示す断面図であり、ここでは一極式の静
電吸着装置を示している。図８において、図１、６、７
と同一符号は同一または相当部分を示し、11は静電吸着
電極を兼ねた高周波印加電極であり、12はこの静電吸着
電極を兼ねた高周波印加電極11に形成された絶縁膜であ
る。In the second embodiment, the case where the film thickness of the insulating films 4 and 7 is reduced to increase the capacitance between the RF electrode 1 and the wafer 8 has been described.
When increasing the relative permittivity (3 or more) of the insulating films 4 and 7, or widening the area of the insulating films 4 and 7 (80% or more with respect to the area of the wafer 8), or the specific resistance of the insulating films 4 and 7. (10 12 Ωcm or less) may be reduced. (Embodiment 3) FIG. 8 is a sectional view showing the structure of an electrostatic chucking device according to a third embodiment of the present invention, in which a one-pole type electrostatic chucking device is shown. In FIG. 8, FIGS.
The same reference numerals denote the same or corresponding portions, 11 is a high frequency applying electrode also serving as an electrostatic attraction electrode, and 12 is an insulating film formed on the high frequency applying electrode 11 also serving as an electrostatic attraction electrode.
【００１７】本実施例では、静電吸着装置の静電吸着電
極を兼ねた高周波印加電極11とウェーハ８間の絶縁膜12
の膜厚を0.3ｍｍにして構成する。このため、この静電
チェックの吸着力を十分とった状態でウェーハ８と静電
吸着電極を兼ねた高周波印加電極11間の静電容量を大き
くすることができ、プラズマのセルフバイアス２電位を
高めることができる。従って、イオンのウェーハ８への
入射効率を高めてウェーハ８の処理効率を向上させるこ
とができる。In this embodiment, the insulating film 12 between the high frequency applying electrode 11 also serving as the electrostatic attraction electrode of the electrostatic attraction device and the wafer 8 is used.
The film thickness is set to 0.3 mm. Therefore, the electrostatic capacity between the wafer 8 and the high-frequency applying electrode 11 which also functions as an electrostatic attraction electrode can be increased while the attraction force of this electrostatic check is sufficiently obtained, and the self-bias 2 potential of plasma is increased. be able to. Therefore, the efficiency of incidence of ions on the wafer 8 can be increased and the processing efficiency of the wafer 8 can be improved.
【００１８】なお、実施例３では、絶縁膜12の膜厚を小
さくして静電吸着電極を兼ねた高周波印加電極11とウェ
ーハ８間の静電容量を大きくする場合について説明した
が、本発明においては、絶縁膜12の比誘電率（３以上）
を大きくする場合や、絶縁膜12の面積（ウェーハ８面積
に対して80％以上）を広くする場合、あるいは絶縁膜12
の比抵抗（1012Ωｃｍ以下）を小さくする場合であって
もよい。In the third embodiment, the case where the film thickness of the insulating film 12 is reduced to increase the capacitance between the high frequency applying electrode 11 also serving as the electrostatic attraction electrode and the wafer 8 has been described. In, the relative dielectric constant of the insulating film 12 (3 or more)
Or when increasing the area of the insulating film 12 (80% or more of the wafer 8 area),
The specific resistance (10 12 Ωcm or less) may be reduced.
【００１９】[0019]
【発明の効果】本発明によれば、ウェーハと高周波印加
電極間の静電容量を大きくしてプラズマのセルフバイア
ス電位を高めることができ、イオンのウェーハへの入射
効率を高めてウェーハの処理効率を向上させることがで
きるという効果がある。According to the present invention, the self-bias potential of plasma can be increased by increasing the electrostatic capacitance between the wafer and the high frequency applying electrode, and the efficiency of incidence of ions on the wafer can be increased to improve the wafer processing efficiency. There is an effect that can improve.
【図１】本発明の原理説明のための静電吸着装置の構造
を示す断面図である。FIG. 1 is a cross-sectional view showing the structure of an electrostatic attraction device for explaining the principle of the present invention.
【図２】本発明の原理説明のためのＲＦ電極とウェーハ
間距離を振った時のウェーハとＲＦ電極間の静電容量を
示す図である。FIG. 2 is a diagram showing the electrostatic capacitance between the wafer and the RF electrode when the distance between the RF electrode and the wafer is changed for explaining the principle of the present invention.
【図３】本発明の原理説明のためのＲＦ電極とウェーハ
間距離を振った時のウェーハのＲＦ結合容量を示す図で
ある。FIG. 3 is a diagram showing the RF coupling capacitance of the wafer when the distance between the RF electrode and the wafer is changed for explaining the principle of the present invention.
【図４】本発明の原理説明のためのＲＦ電極とウェーハ
間距離を振った時のＲＦバイアス電位を示す図である。FIG. 4 is a diagram showing an RF bias potential when the distance between the RF electrode and the wafer is changed for explaining the principle of the present invention.
【図５】本発明の原理説明のためのＲＦ電極とウェーハ
間距離を振った時のＳｉＯ2 エッチングレートを示す図
である。FIG. 5 is a diagram showing the SiO 2 etching rate when the distance between the RF electrode and the wafer is changed for explaining the principle of the present invention.
【図６】本発明の実施例１に則した静電吸着装置の構造
を示す断面図である。FIG. 6 is a cross-sectional view showing the structure of the electrostatic attraction device according to the first embodiment of the present invention.
【図７】本発明の実施例２に則した静電吸着装置の構造
を示す断面図である。FIG. 7 is a cross-sectional view showing a structure of an electrostatic attraction device according to a second embodiment of the present invention.
【図８】本発明の実施例３に則した静電吸着装置の構造
を示す断面図である。FIG. 8 is a cross-sectional view showing the structure of an electrostatic attraction device according to a third embodiment of the present invention.
１ ＲＦ電極 ２ カプリングコンデンサー ３ ＲＦ電源 ４ 絶縁膜 ５、５ａ、５ｂ 静電吸着電極 ６ ＲＦフィルター ７ 絶縁膜 ８ ウェーハ 11 静電吸着電極を兼ねた高周波印加電極 12 絶縁膜 1 RF Electrode 2 Coupling Capacitor 3 RF Power Supply 4 Insulation Film 5, 5a, 5b Electrostatic Adsorption Electrode 6 RF Filter 7 Insulation Film 8 Wafer 11 High Frequency Applying Electrode 12
Claims (4)
（４）が形成され、該第１の絶縁膜（４）上に静電吸着
電極（５）が形成され、該静電吸着電極（５）上に第２
の絶縁膜（７）が形成され、該第２の絶縁膜（７）上に
ウェーハ（８）が静電吸着されてなる静電吸着装置にお
いて、 該高周波印加電極（１）と該静電吸着電極（５）間の該
第１の絶縁膜（４）の膜厚を0.1 ｍｍ以上１ｍｍ以下に
するか、あるいは該第１の絶縁膜（４）の比誘電率を３
以上にするか、あるいは該第１の絶縁膜（４）の面積を
該ウェーハ（８）面積の80％以上にするか、若しくは該
第１の絶縁膜（４）の比抵抗を1012Ωｃｍ以下にするこ
とを特徴とする静電吸着装置1. A first insulating film (4) is formed on a high frequency applying electrode (1), and an electrostatic adsorption electrode (5) is formed on the first insulating film (4). Second on the adsorption electrode (5)
Of the wafer (8) is electrostatically adsorbed on the second insulating film (7), the high-frequency applying electrode (1) and the electrostatic adsorption device. The film thickness of the first insulating film (4) between the electrodes (5) is set to 0.1 mm or more and 1 mm or less, or the relative dielectric constant of the first insulating film (4) is set to 3
Or more, the area of the first insulating film (4) is 80% or more of the area of the wafer (8), or the specific resistance of the first insulating film (4) is 10 12 Ωcm or less. Electrostatic attraction device characterized by
（５）間の前記第２の絶縁膜（７）の膜厚を0.1 ｍｍ以
上１ｍｍ以下にするか、あるいは該第２の絶縁膜（７）
の比誘電率を３以上にするか、あるいは該第２の絶縁膜
（７）の面積を該ウェーハ（８）面積の80％以上にする
か、若しくは該第２の絶縁膜の比抵抗を1012Ωｃｍ以下
にすることを特徴とする請求項１記載の静電吸着装置。2. The film thickness of the second insulating film (7) between the wafer (8) and the electrostatic attraction electrode (5) is set to 0.1 mm or more and 1 mm or less, or the second insulating film (7)
The relative dielectric constant of 3 or more, or the area of the second insulating film (7) is 80% or more of the area of the wafer (8), or the specific resistance of the second insulating film is 10 or more. The electrostatic attraction device according to claim 1, wherein the electrostatic attraction device has a resistance of 12 Ωcm or less.
とを特徴とする請求項１乃至４記載の静電吸着装置。3. The electrostatic attraction device according to claim 1, wherein the device is a two-pole type electrostatic attraction device.
（11）上に絶縁膜（12）が形成され、該絶縁膜（12）上
にウェーハ（８）が静電吸着されてなる静電吸着装置に
おいて、 該静電吸着電極を兼ねた高周波印加電極（11）と該ウェ
ーハ（８）間の該絶縁膜（12）の膜厚を0.1 ｍｍ以上１
ｍｍ以下にするか、あるいは該絶縁膜（12) の比誘電率
を３以上にするか、あるいは該絶縁膜（12）の面積を該
ウェーハ（８）面積の80％以上にするか、若しくは該絶
縁膜（12）の比抵抗を1012Ωｃｍ以下にすることを特徴
とする静電吸着装置。4. An electrostatic device comprising an insulating film (12) formed on a high-frequency applying electrode (11) also serving as an electrostatic attraction electrode, and a wafer (8) being electrostatically attracted onto the insulating film (12). In the adsorption device, the film thickness of the insulating film (12) between the high frequency applying electrode (11) also serving as the electrostatic adsorption electrode and the wafer (8) is 0.1 mm or more 1
mm or less, or the dielectric constant of the insulating film (12) is 3 or more, or the area of the insulating film (12) is 80% or more of the area of the wafer (8), or An electrostatic adsorption device characterized in that the specific resistance of the insulating film (12) is 10 12 Ωcm or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10316192A JPH05299494A (en) | 1992-04-22 | 1992-04-22 | Electrostatic attracting apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10316192A JPH05299494A (en) | 1992-04-22 | 1992-04-22 | Electrostatic attracting apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05299494A true JPH05299494A (en) | 1993-11-12 |
Family
ID=14346786
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10316192A Withdrawn JPH05299494A (en) | 1992-04-22 | 1992-04-22 | Electrostatic attracting apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05299494A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015162618A (en) * | 2014-02-28 | 2015-09-07 | 株式会社日立ハイテクノロジーズ | plasma processing apparatus |
| JP2023010807A (en) * | 2017-09-29 | 2023-01-20 | 住友大阪セメント株式会社 | Electrostatic chuck device |
-
1992
- 1992-04-22 JP JP10316192A patent/JPH05299494A/en not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015162618A (en) * | 2014-02-28 | 2015-09-07 | 株式会社日立ハイテクノロジーズ | plasma processing apparatus |
| JP2023010807A (en) * | 2017-09-29 | 2023-01-20 | 住友大阪セメント株式会社 | Electrostatic chuck device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 19990706 |