JPH05299060A - Fluorescent lamp and manufacture thereof - Google Patents

Abstract

PURPOSE:To provide a blue fluorescent lamp of high brightness with the same size and shape as a light emitting diode by positioning and sealing a phosphor emitting blue light in such a way as faced to a field emission type emitter array. CONSTITUTION:A transparent conductive film 3 as an anode is formed on a transparent glass substrate 5, and a spacer 6 is formed with low fusion point glass or the like, and patternized. A blue phosphor (e.g. ZnS: Ag and In2O3) layer 2 is formed in the zone of the film 3 enclosed with the spacer 6. Also, a bonding electrode film 4 is formed around the spacer 6. Thereafter, the substrate 5 is placed on a board 1 and high voltage of about 400 to 600V is applied to the board 1 and the electrode 4 under a decompressed force, thereby pasting the substrate 5 to the board 1 via the spacer 6 with an anode bonding method. As a result, space between the substrate 5 and an emitter array layer 2 in the spacer 6 is kept at decompressed state. A fluorescent lamp having the board 1 pasted to the substrate 5 is mounted on a stem 7. Then, a layer of a conductive resin adhesive 14 is formed on the reverse side of the board 1 for use as an emitter electrode, and covered with a resin seal 8.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a fluorescent lamp suitable for fluorescent display and the like, and more particularly to a fluorescent lamp displaying blue color.

[0002]

2. Description of the Related Art Some blue lamps using light emitting diodes use materials such as GaN, SiC, ZnS and ZnSe. For example, according to Advanced Display Technology, Second Edition, pages 47 to 49 (Management Systems Research Institute, Inc., published in November 1985), a GaN blue lamp is a GaN blue lamp that grows n-type GaN crystals on a sapphire substrate.
The structure is such that zinc is doped to form a semi-insulating thin layer, and a metal electrode is formed thereon. This lamp has an emission peak wavelength of 490 nm, an operating voltage of 4 to 75 V, a lamp luminous intensity of 2 mcd at a forward current of 10 mA, and a luminous efficiency of 0.
It is 03lm / W.

The SiC blue lamp has a structure in which aluminum and nitrogen are sequentially added in the course of crystal growth to form a pn junction, and the crystal-grown surface is formed into a mesa shape before the electrode is taken out. This lamp has an emission peak wavelength of 480 nm, a forward voltage of 3.5 V, and a lamp luminous intensity of 20.
The mA is 6 mcd, and the luminous efficiency is 0.027 lm / W.

The ZnS blue lamp has a structure in which a thin insulating ZnS crystal is grown on the n-type GaP crystal of the Bridgman method by using the metal organic chemical vapor deposition method to form a metal on the surface. This lamp has an emission peak wavelength of 465 nm, a forward voltage of 5 V, a lamp luminous intensity of 2 mcd at 10 mA, and a luminous efficiency of 0.025 lm / W.

The ZnSe blue lamp uses a vapor pressure control temperature difference method for controlling the vapor pressures of Zn and Se to produce a ZnSe blue lamp at about 1100 ° C.
Then, the crystal is grown at a relatively low temperature to form a pn junction. This lamp has an emission peak wavelength of 480 nm,
The forward current is 2 mV, the luminous intensity of the lamp is 2 mcd, and the luminous efficiency is 0.0005 lm / W.

These blue light emitting diodes are inferior in lamp luminous intensity by two digits or more as compared with the red and green light emitting diodes having a lamp luminous intensity of 300 mcd or more, so that a full color display is constituted by the light emitting diodes. In order to use it in an environment that is easily affected by outside light, it is necessary to greatly improve the luminous efficiency of blue light.

[0007]

SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a blue fluorescent lamp with a high luminous intensity, which has a size and shape comparable to those of a light emitting diode and can be realized at a low manufacturing cost.

[0008]

The above objects are achieved by a fluorescent lamp characterized in that one or a plurality of field emission type emitter arrays are opposed to each other and phosphors are arranged in a resin seal. To be achieved.

The present invention is a fluorescent lamp characterized in that the phosphor emits blue light.

Further, the above-mentioned objects are to form a transparent electrode on a transparent substrate, provide a spacer in a peripheral portion of the transparent substrate, and dispose a phosphor in an internal region of the spacer on the transparent electrode of the transparent substrate, A method for manufacturing a fluorescent lamp, characterized in that the transparent substrate is bonded to one or a plurality of field emission type emitter array substrates by an anodic bonding method so that the fluorescent materials face each other, and these are resin-sealed. Is also achieved.

Further, for the above-mentioned purposes, a transparent electrode is formed on a transparent substrate, a fluorescent material is arranged on the transparent electrode, and a spacer is formed on the periphery of one or more field emission type emitter array substrates. Then, the transparent substrate is pressure-bonded to the emitter array substrate so that the phosphors face each other, and these are resin-sealed, thereby achieving a method for manufacturing a fluorescent lamp.

[0012]

The present invention will be described below with reference to the drawings. FIG. 1 is a view showing the structure of the fluorescent lamp of the present invention. The present invention includes a substrate 1 (referred to as an emitter array) in which one or a plurality of field emission type emitters and a gate are integrally formed, and an anode in which a phosphor 2 is formed so as to face the substrate 1. The transparent substrate 5 on which the transparent conductive film 3 and the electrode 4 are provided is arranged, and the lead 11 serves as the gate and the lead 12
Is connected to the emitter, and the lead 13 is connected to the anode electrode. When a positive voltage is applied to the gate by the leads 12 and 11, electrons are emitted from the emitter by an electric field. When a positive voltage above the gate is applied to the rear node by the lead 13, the electrons emitted from the emitter collide with the phosphor 2 while being accelerated and emit light. This light is emitted to the outside through a transparent resin.

Here, the emitter array of the substrate 1 has a sharp tip formed by a semiconductor fine processing technique, and is called a field emission type emitter that emits electrons by concentrating an electric field on this portion. Is done.
The structure is composed of one or a plurality of Spindt type (pyramid type) emitters, wedge (wedge type) emitters, etc., and any structure may be used as long as it can efficiently emit electrons.

As an example of this emitter array, for example, in the structure shown in FIG. 3, the emitter 21 formed on the substrate 1 and having an acute tip is formed on the substrate 1 with an insulating film 22 interposed therebetween. It is composed of the gate 23. Although the number of emitters is one in the example of FIG. 3, a plurality of emitters may be provided as long as they can efficiently emit electrons.

In the present invention, a spacer 6 is arranged between the substrate 1 which is an emitter array and the phosphor 4 so that the emitter and the phosphor face each other in the vicinity, and the spacer 6 is resin-sealed inside. At the same time, it plays a role of preventing the resin from entering, and at the same time, keeps a reduced pressure between the emitter array and the phosphor inside the resin.

By keeping a reduced pressure between the emitter array and the phosphor by the spacer 6, the electrons emitted from the emitter do not collide with other molecules and the phosphor 2
Reach up to. Therefore, some of the electrons emitted from the emitter flow to the gate, but most of them reach the anode, so that the emission efficiency is extremely high. Further, by changing the voltage applied to the anode, the speed at which the electrons emitted from the emitter reach the phosphor 2 can be changed, and the amount of the electrons reaching the phosphor 2 can be changed. it can. As a result, the lamp luminous intensity can be arbitrarily changed by changing the voltage applied to the anode.

[0017]

EXAMPLES The present invention will be specifically described below with reference to examples.

Embodiment 1 FIG. 1 is a sectional view of an embodiment of a blue fluorescent lamp according to the present invention. First, a bonding pad for supplying electricity to the gate is formed in the peripheral portion on the emitter array substrate 1 in which the field emission type emitter and the gate are integrally formed.

Next, on the transparent substrate 5, for example, a transparent glass substrate, a transparent conductive film 3 serving as an anode, for example, ITO or the like is formed by a sputtering device, a vapor deposition device or the like, and spacers 6,
For example, low melting point glass or the like is formed on the transparent electrode 3 by a sputtering device or the like. Substrate 1 by photolithography process
The spacer 6 is etched by a reactive ion etching device or the like so as to leave a portion to be joined with. Next, the spacer 6 on the transparent conductive film 3 is formed by an electrodeposition method or the like.
In the area surrounded by the phosphor 2, for example, ZnS: Ag + I
n ₂ O ₃ etc. are formed. Then, the bonding electrode film 4 is formed on the outer periphery of the spacer 6 by a lift-off method by a sputtering device, a vapor deposition device, or the like. Then, a transparent substrate 5 having a phosphor or the like formed thereon is placed on the substrate 1, and a high voltage of about 400 to 600 V is applied to the substrate 1 and the electrode 4 under reduced pressure, for example, 10 ⁻⁵ torr or less, and the anodic bonding method is applied. By the above, the spacers 6 are attached to each other. The temperature at this time depends on the material of the spacer 6 and is 100 to 50.
It is 0 ° C. This allows the emitter inside the spacer
The space between the array and the phosphor can be kept under reduced pressure.

The stem 1 is the substrate 1 of the fluorescent lamp body in which the above-mentioned substrate 1 and the transparent substrate 5 on which a fluorescent substance or the like is formed are attached.
To install. For this attachment, since the back surface of the substrate 1 is used as an emitter electrode, for example, a conductive resin adhesive 14 is used, and after attachment, baking is performed at about 80 ° C. for about 5 hours to fix. did. Then, the gate electrode of the substrate 1 and the lead 11 of the stem 7 and the anode electrode 4 and the lead 13 of the stem 7 are wire-bonded 9 and 10, respectively. The lead 1 is attached to the stem 7.
1, 12 and 13 are formed so as to be electrically insulated from each other. Since the lead 12 conducts electricity when the substrate 1 is fixed to the stem 7, the lead 12 can also serve as the stem 7 itself.

Next, these are immersed in a resin placed in an arbitrary mold to seal the whole resin 8. The resin to be used may be any resin as long as it is colorless and transparent or a transparent resin colored in blue in order to further emphasize the emitted blue color, for example, an epoxy resin usually used for a light emitting diode or the like. Is preferred. The shape may be any shape, for example, the upper part may be formed into a lens shape (including a special shape such as an aspherical lens) in order to concentrate the light above the phosphor. This completes a blue fluorescent lamp of the same size and shape as a conventional light emitting diode.

Embodiment 2 FIG. 2 is a sectional view of another embodiment of the blue fluorescent lamp according to the present invention. The same reference numerals are given to the same members as those in FIG. 1 of the first embodiment.

First, as in the first embodiment, a bonding pad for supplying electricity to the gate is formed in the peripheral portion on the emitter array substrate 1 in which the field emission type emitter and the gate are integrally formed.

Next, a transparent conductive film 3 serving as an anode, such as ITO, is formed on the transparent substrate 5, for example, a transparent glass substrate, by a sputtering apparatus, a vapor deposition apparatus or the like, and the transparent conductive film 3 is formed by an electrodeposition method or the like. A phosphor 2, for example ZnS: Ag + I
n ₂ O ₃ etc. are formed. Then, the bonding electrode film 4 is formed by forming a metal thin film by a sputtering apparatus, a vapor deposition apparatus or the like, patterning the outer peripheral portion of the phosphor 2 by a photolithography process, and etching by reactive ion etching or the like.

Next, a spacer 6 is arranged on the outer peripheral portion of the emitter array on the substrate 1 under a reduced pressure of 10 ^-4 Pa or less, and the transparent substrate 5 is further placed on the spacer 6 to form the emitter array and the phosphor. 2 are arranged so as to face each other, and pressure is applied from the upper part of the transparent substrate 5 so that a force is uniformly applied to the plane of the substrate 1 to bond the substrate 1 and the substrate 5. The temperature at the time of bonding varies depending on the material of the spacer 6, but is preferably 100 to 200 ° C. Further, for the spacer 6, for example, epoxy resin or the like is desirable. As a result, the space inside the spacer between the emitter array and the phosphor can be kept under reduced pressure.

The stem 1 is the substrate 1 of the fluorescent lamp body in which the above-mentioned substrate 1 and the transparent substrate 5 on which a fluorescent substance or the like is formed are attached.
To install. For this attachment, since the back surface of the substrate 1 is used as an emitter electrode, for example, a conductive resin adhesive 14 is used, and after attachment, baking is performed at about 80 ° C. for about 5 hours to fix. did. Then, the gate electrode of the substrate 1 and the lead 11 of the stem 7 and the anode electrode 4 and the lead 13 of the stem 7 are wire-bonded 9 and 10, respectively. The lead 1 is attached to the stem 7.
1, 12 and 13 are formed so as to be electrically insulated from each other. Since the lead 12 conducts electricity when the substrate 1 is fixed to the stem 7, the lead 12 can also serve as the stem 7 itself.

Next, in the same manner as in Example 1, the resin sealing 8
By doing so, a blue fluorescent lamp having the same size and shape as the conventional light emitting diode is completed.

When the emitters of the fluorescent lamps of Examples 1 and 2 manufactured as described above were grounded, a positive voltage of 80 V was applied to the gate, and a positive voltage higher than the gate voltage was applied to the anode, both Examples 1 and 2 emitted light. Peak wavelength is 450
nm, lamp brightness 16 fL, luminous efficiency 0.26 lm
A good characteristic of / W was obtained.

[0029]

The fluorescent lamp according to the present invention can realize a blue color which cannot be obtained by the conventional light emitting diode with a high luminous intensity of the lamp, and the field emission type emitter array is made of an inexpensive material such as a silicon substrate or a glass substrate. A blue lamp can be obtained at a low manufacturing cost because it can be manufactured in large quantities and uniformly using a semiconductor manufacturing process. In addition, by combining multiple field emission emitters into a single emitter array, it is possible to obtain good lamp luminosity, so it is not easily affected by outside light, and it can be combined with red and green for displays that can be used outdoors. Available.

Further, as described above, the present invention is preferably used as a high-luminance blue lamp which has not been obtained by a conventional light emitting diode, but the color of the phosphor is a phosphor other than blue. As a result, it is possible to manufacture lamps of all colors that could not be obtained with light emitting diodes. Furthermore, even in red and yellow, which have achieved a certain level of luminous intensity by light-emitting diodes, the light-emitting diodes emit light due to the movement of electric charges (electrons, holes, etc.) in solids such as semiconductors, so the response While there is a limit to increasing the speed, in the present invention, the light emitting diode emits light by allowing electrons to reach the phosphor without being disturbed by other molecules in the depressurized state. It is possible to realize a high-speed response which has not been obtained, and it is possible to manufacture a lamp having extremely high performance and high-speed response.

[Brief description of drawings]

FIG. 1 is a sectional view for explaining an embodiment of a fluorescent lamp of the present invention.

FIG. 2 is a sectional view for explaining another embodiment of the fluorescent lamp of the present invention.

FIG. 3 is a cross-sectional view for explaining an emitter array.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Substrate, 2 ... Phosphor, 3 ... Transparent electrode, 4 ... Anode electrode, 5 ... Transparent substrate, 6 ... Spacer, 7 ... Stem, 8 ... Resin sealing, 9, 10 ... Wire, 11, 12, 13 ... Leads, 14 ... Adhesives, 21 ... Emitters, 22 ... Insulating films, 23 ... Gate electrodes.

Claims (4)

[Claims] 1. A fluorescent lamp comprising a phosphor arranged opposite to one or a plurality of field emission type emitter arrays, which are resin-sealed. 2. The fluorescent lamp according to claim 1, wherein the phosphor emits blue light. 3. A transparent electrode is formed on a transparent substrate, a spacer is provided in the peripheral portion of the transparent substrate, and a phosphor is arranged in an internal region of the spacer on the transparent electrode of the transparent substrate, and one or a plurality of phosphors are arranged. The transparent substrate is bonded by an anodic bonding method so that the phosphor faces the individual field emission type emitter array substrates,
A method of manufacturing a fluorescent lamp, which comprises resin-sealing these. 4. A transparent electrode is formed on a transparent substrate, a phosphor is arranged on the transparent electrode, and a spacer is formed on the periphery of one or a plurality of field emission type emitter array substrates. A method for manufacturing a fluorescent lamp, characterized in that the transparent substrate is pressure-bonded to the array substrate so as to face the phosphor, and these are resin-sealed.