JPS6047476A - End face radiation type light emitting diode - Google Patents
End face radiation type light emitting diodeInfo
- Publication number
- JPS6047476A JPS6047476A JP58156724A JP15672483A JPS6047476A JP S6047476 A JPS6047476 A JP S6047476A JP 58156724 A JP58156724 A JP 58156724A JP 15672483 A JP15672483 A JP 15672483A JP S6047476 A JPS6047476 A JP S6047476A
- Authority
- JP
- Japan
- Prior art keywords
- chip
- electrode
- light emitting
- emitting diode
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005855 radiation Effects 0.000 title description 4
- 150000004767 nitrides Chemical class 0.000 claims abstract description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052681 coesite Inorganic materials 0.000 abstract description 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 2
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 2
- 229910052682 stishovite Inorganic materials 0.000 abstract description 2
- 229910052905 tridymite Inorganic materials 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000012141 concentrate Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
Description
【発明の詳細な説明】
く技術分野〉
本発明はＱａＡｓ赤外発光ダイオードの端面放射型素子
等の端面放射型発光ダイオードに関するものである。DETAILED DESCRIPTION OF THE INVENTION Technical Field The present invention relates to edge-emitting light emitting diodes such as edge-emitting elements of QaAs infrared light emitting diodes.
〈従来技術〉
一般に発光ダイオードは、第１図、第２図に示す通り、
ＧａＡｓチップ１の一方の面にアノード（Ｐ層）電極を
形成し、他方の相対する面にカソード（Ｎ層）電極３を
形成し、アノード電極２にワイヤボンド法によシ細線を
接続するとともに、カソード電極３を共晶結合又は導電
性接着剤を用いてステムやリードフレームに接着して構
成されている。そして、この発光ダイオードに順電流を
流すと、チップ内のｐｎ接合付近、正確には接合近傍の
Ｐ層側の部分４で赤外光（λｐ＝９４０〜９５０ｍｍ）
の発光が生じ、図中矢印φ方向に放射される。<Prior art> In general, light emitting diodes are as shown in Figures 1 and 2.
An anode (P layer) electrode is formed on one surface of the GaAs chip 1, a cathode (N layer) electrode 3 is formed on the other opposing surface, and a thin wire is connected to the anode electrode 2 by wire bonding. , the cathode electrode 3 is bonded to a stem or lead frame using eutectic bonding or a conductive adhesive. When a forward current is passed through this light emitting diode, infrared light (λp = 940 to 950 mm) is emitted near the pn junction in the chip, more precisely at the portion 4 on the P layer side near the junction.
Light emission occurs and is emitted in the direction of the arrow φ in the figure.
しかしながら、このタイプの発光ダイオードは、比較的
大きな電流を流して発光させた場合、電流はアノード電
極のある中央部に集中して流れ、ｐｎ接合のしかもチッ
プの中央部のみが強く光放射する。ところが、ＧａＡｓ
結晶は自身の放出する発光波長に対しての吸収率が大き
いので、チツン°中央付近で放射された光はチップ表面
に達する徒でにその一部が吸収され発光効率が低下して
しまうという欠点がある。However, in this type of light emitting diode, when a relatively large current is applied to emit light, the current flows in a concentrated manner in the center where the anode electrode is located, and only the pn junction and the center of the chip emit light strongly. However, GaAs
Since the crystal has a high absorption rate for the wavelength of its own emitted light, the disadvantage is that the light emitted near the center of the chip will be partially absorbed before it reaches the chip surface, reducing the luminous efficiency. There is.
そこで、このような欠点を解消するものとして、第３図
に示す様な端面構造を示すものが提案さｔている。これ
は、チップの端面（側面）から光を放射させるものでチ
ップ表面の両端部に２個の７７−ド電極２．２を配設し
て電流をチップ端面の比較的近い部分に集中させ、光放
射をチップ端面に近い部分５．５′に集中させることに
よってチップ内部における吸収を少くして放射効率を高
めたものである。In order to solve this problem, a device having an end face structure as shown in FIG. 3 has been proposed. This is to emit light from the end face (side surface) of the chip, and two 77-dead electrodes 2.2 are arranged at both ends of the chip surface to concentrate the current to a relatively close part of the chip end face. By concentrating light radiation on a portion 5.5' near the end face of the chip, absorption inside the chip is reduced and radiation efficiency is increased.
しかしながら、このような電極構造はワイヤポンドし得
る電極巾以下には小さくできない上、場合によっては複
数本のワイヤ配線を施す必要があυ、アセンブリ上の利
点と両立しにくいという問題があった。However, such an electrode structure cannot be made smaller than the electrode width that can be wire bonded, and in some cases it is necessary to provide a plurality of wires, which is problematic in that it is difficult to achieve both advantages in terms of assembly.
〈目 的〉
本発明はかかる従来の問題点に鑑みて成されたもので、
端面放射型発光ダイオードの利点を失うことなく、しか
もチップ設計上自由度のある端面放射型発光ダイオード
の提供を目的とする〇〈実施例〉
第４図は本発明に係る端面放射型発光ダイオードの斜視
図、第５図は同断面図である。<Purpose> The present invention has been made in view of such conventional problems, and
Aiming to provide an edge-emitting type light-emitting diode with flexibility in chip design without losing the advantages of the edge-emitting type light-emitting diode. The perspective view and FIG. 5 are the same sectional views.
図において、１は液層成長等により形成したＧａＡｓチ
ップ・６はチップ表面の２層上にＣＶＤ法等により形成
した誘電体膜である。この誘電体膜６は窒化膜又は５ｉ
０２から成り、特にチップ表面の両端部の細いＧａＡｓ
０Ｐ層７，７部分が露出するようホトエツチングによシ
除去して図中左又は右方向から見てチップ表面の中央部
に帯状に形成されている。In the figure, 1 is a GaAs chip formed by liquid layer growth or the like, and 6 is a dielectric film formed on two layers on the chip surface by CVD or the like. This dielectric film 6 is a nitride film or 5i
02, especially the thin GaAs at both ends of the chip surface.
The OP layers 7, 7 are removed by photo-etching to expose them, and are formed in a band shape at the center of the chip surface when viewed from the left or right direction in the figure.
８ばＧａＡｓのＰ層にオーミックコンタクトを形成し得
る金属、たとえば銀、亜鉛、アルミニウム等を前記誘電
電膜６及び２層７，７の部分の」二に積層構造にて蒸着
又はスパッタリングにより形成されたアノード電極であ
り、このアノード電極は電流を集中させる必要のないチ
ップ表面の中央部分がエツチングにより除去され図示の
如くＨ型の形状に形成されている。8. A metal capable of forming an ohmic contact with the GaAs P layer, such as silver, zinc, aluminum, etc., is formed on the dielectric film 6 and the second layer 7 by vapor deposition or sputtering in a laminated structure. This anode electrode is formed into an H-shape as shown in the figure by etching away the central portion of the chip surface where it is not necessary to concentrate current.
このような形状の誘電体層６とアノード電極層を形成す
ること傾より、電流をチップの相対する両端、紳近傍に
集中させることができ、またアノード電極８の面積が充
分に大きいのでワイヤボンドが容易であるとともに１本
のワイヤボンディングでアノードを接続することができ
る。By forming the dielectric layer 6 and the anode electrode layer in such a shape, the current can be concentrated at opposite ends of the chip, near the center, and since the area of the anode electrode 8 is sufficiently large, wire bonding is possible. is easy, and the anode can be connected with one wire bonding.
カソード電極１ｏは前記アノード電極８と同形状（Ｈ型
）のもので、チップ１の他方の面（図では下面）に形成
されている。よって、電流は９．９′で示す如くチップ
端面に近い非常に狭い部分に集中して流れるため、チッ
プ内部での吸収が少なく、光は矢印ゆで示される二方向
に特に有効に放射される。The cathode electrode 1o has the same shape (H-shape) as the anode electrode 8, and is formed on the other surface of the chip 1 (the lower surface in the figure). Therefore, the current flows in a concentrated manner in a very narrow area near the end face of the chip as shown by 9.9', so that absorption inside the chip is small and light is emitted particularly effectively in the two directions shown by the arrows.
第６図は上記した端面放射型赤外発光ダイオードの実装
ＮＴｈ示すもので、リードフレーム１１の先端にチップ
１０をボンディングし、そのチップを光の放射される２
方向にレンズ部１２．１２’を有する透明樹脂１３によ
りパッケージしたものである。FIG. 6 shows the mounting NTh of the above-mentioned edge-emitting infrared light emitting diode, in which a chip 10 is bonded to the tip of a lead frame 11, and the chip is attached to a 2
It is packaged with transparent resin 13 having lens portions 12 and 12' in the direction.
第７図は他の実施例を示し、特にこの例は一方向のみに
光放射をと９出す場合の構造であり、誘電体膜６の一端
部が露出するように、Ｔ字型のアの接触する部分に対応
するチップ裏面の部分にカソード電極１０を設けたもの
である。FIG. 7 shows another embodiment. In particular, this example is a structure for emitting light radiation in only one direction, and a T-shaped aperture is formed so that one end of the dielectric film 6 is exposed. A cathode electrode 10 is provided on the back surface of the chip corresponding to the contact area.
この実施例の場合も先の実施例同様の効果を奏すること
ができる。なお、上記実施例においてアノード電極とカ
ソード電極を逆にして実装することもできる。This embodiment also provides the same effects as the previous embodiment. In addition, in the above embodiment, the anode electrode and the cathode electrode can be reversed and mounted.
く効 果〉
以上の様に本発明の端面放射型発光ダイオ−′ドは、チ
ップの一方の面に稜面の端部を少し残して窒化膜あるい
はＳ ｉ ０２膜などによる誘電体層を形成し、前記チ
ップ表面に少くともチップ中央部分に対応する部分の面
積を小さくしたアノード電極を形成するとともに、チッ
プの他方の面であって且前記アノード電極と前記チップ
の残余の端部との結合位置に対応する部分にカソード電
極を形成したから、端面放射型の利点を失わず、しかも
アノード電極の面積を充分大きくできるので、１本のワ
イヤボンディングでアノードを接続することがで、きる
。Effects> As described above, the edge-emitting light emitting diode of the present invention has a dielectric layer formed of a nitride film or SiO2 film on one side of the chip, leaving a small edge of the edge. An anode electrode having a reduced area at least in a portion corresponding to the central portion of the chip is formed on the surface of the chip, and an anode electrode is formed on the other surface of the chip, and the anode electrode is connected to the remaining end of the chip. Since the cathode electrode is formed in the corresponding position, the advantages of the edge-emitting type are not lost, and the area of the anode electrode can be made sufficiently large, so that the anode can be connected with one wire bonding.
第１図及び第２図は従来の発光ダイオードの斜視図と断
面図、第３図は従来の端面放射型発光ダイオード、第４
図及び第５図は本発明による端面放射型発光ダイオード
の斜視図と断面図、第６図は同発光ダイオードの実装例
を示す図、第７図は他の実施例である。Figures 1 and 2 are a perspective view and a sectional view of a conventional light emitting diode, Figure 3 is a conventional edge emitting type light emitting diode, and Figure 4 is a conventional edge emitting type light emitting diode.
5 and 5 are a perspective view and a sectional view of an edge-emitting light emitting diode according to the present invention, FIG. 6 is a diagram showing an example of mounting the same light emitting diode, and FIG. 7 is another embodiment.
１けＧａＡｓチノグ、６は誘電体膜、８はアノード電極
、１０はカソード電極
代理人 弁理士 福 士 愛 彦（他２名）第１図
第３図
第２図
６、
第４図
／３
第６図1 GaAs chinograph, 6 is a dielectric film, 8 is an anode electrode, 10 is a cathode electrode Patent attorney Yoshihiko Fukushi (and 2 others) Figure 1 Figure 3 Figure 2 Figure 6, Figure 4/3 Figure 6
Claims (1)
膜もしくは５ｉＯｚ膜などによる誘電体層を形成し、前
記チップ表面に少くともチップ中央部分に対応する部分
の面積を小さくしたアノード電極を形成するとともに、
チップの他方の面であって且前記アノード電極と前記チ
ップの残余の端部との結合位置に対応する部分にカソー
ド電極を形成したことを特徴とする端面放射型発光ダイ
オード。1. An anode formed by forming a dielectric layer such as a nitride film or a 5iOz film on one side of the chip, leaving a small edge of the edge, and reducing the area of at least the part corresponding to the central part of the chip on the chip surface. Along with forming the electrode,
1. An edge-emitting light emitting diode, characterized in that a cathode electrode is formed on the other surface of the chip and at a portion corresponding to a joining position between the anode electrode and the remaining end of the chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58156724A JPS6047476A (en) | 1983-08-25 | 1983-08-25 | End face radiation type light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58156724A JPS6047476A (en) | 1983-08-25 | 1983-08-25 | End face radiation type light emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6047476A true JPS6047476A (en) | 1985-03-14 |
Family
ID=15633942
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58156724A Pending JPS6047476A (en) | 1983-08-25 | 1983-08-25 | End face radiation type light emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6047476A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63114279A (en) * | 1986-10-31 | 1988-05-19 | Fujitsu Ltd | Light emitting diode |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5789275A (en) * | 1980-11-25 | 1982-06-03 | Nec Corp | Manufacture of semiconductor light emitting diode |
| JPS57122585A (en) * | 1981-01-22 | 1982-07-30 | Minolta Camera Co Ltd | Light emitting diode |
-
1983
- 1983-08-25 JP JP58156724A patent/JPS6047476A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5789275A (en) * | 1980-11-25 | 1982-06-03 | Nec Corp | Manufacture of semiconductor light emitting diode |
| JPS57122585A (en) * | 1981-01-22 | 1982-07-30 | Minolta Camera Co Ltd | Light emitting diode |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63114279A (en) * | 1986-10-31 | 1988-05-19 | Fujitsu Ltd | Light emitting diode |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3785820B2 (en) | Light emitting device | |
| JP3707279B2 (en) | Semiconductor light emitting device | |
| JP3896704B2 (en) | GaN compound semiconductor light emitting device | |
| EP2797126A1 (en) | Light-emitting diode, and method for producing same | |
| US7817695B2 (en) | Lateral optically pumped surface-emitting semiconductor laser on a heat sink | |
| JP2012019234A (en) | GaN BASED LIGHT-EMITTING DIODE CHIP AND METHOD OF MANUFACTURING LIGHT-EMITTING DIODE STRUCTURE ELEMENT | |
| JP2009076490A (en) | Light-emitting device | |
| KR20050000197A (en) | GaN LED for flip-chip bonding and manufacturing method therefor | |
| TW201709554A (en) | Light-emitting diode with high efficiency | |
| US7126163B2 (en) | Light-emitting diode and its manufacturing method | |
| JPS59205774A (en) | Semiconductor light-emitting element | |
| JPS6047476A (en) | End face radiation type light emitting diode | |
| JPH06260723A (en) | Semiconductor laser device | |
| JPS6195590A (en) | Photoelectronic device | |
| JPH06350140A (en) | Light emitting diode | |
| JPH07131066A (en) | Light emitting diode | |
| JPH10173225A (en) | Semiconductor light-emitting element | |
| JP2021504951A (en) | Luminescent semiconductor device | |
| JP2950192B2 (en) | Nitride semiconductor electrode | |
| JPH1022570A (en) | Nitride semiconductor laser element | |
| JP3186937B2 (en) | Semiconductor light emitting device | |
| KR100335106B1 (en) | Ⅲ-Ⅴ group GaN semiconductor optical devices | |
| JP2000332305A (en) | Semiconductor light emitting element | |
| JPH10242518A (en) | Semiconductor light emitting device | |
| JP2782717B2 (en) | Light emitting diode |