JPH0528909B2 - - Google Patents

Info

Publication number
JPH0528909B2
JPH0528909B2 JP61165671A JP16567186A JPH0528909B2 JP H0528909 B2 JPH0528909 B2 JP H0528909B2 JP 61165671 A JP61165671 A JP 61165671A JP 16567186 A JP16567186 A JP 16567186A JP H0528909 B2 JPH0528909 B2 JP H0528909B2
Authority
JP
Japan
Prior art keywords
resistance value
resistance
gaas
active layer
value
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP61165671A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6321864A (ja
Inventor
Tadashi Saito
Hiroshi Nakamura
Masanori Sumya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP16567186A priority Critical patent/JPS6321864A/ja
Publication of JPS6321864A publication Critical patent/JPS6321864A/ja
Publication of JPH0528909B2 publication Critical patent/JPH0528909B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP16567186A 1986-07-16 1986-07-16 半導体素子の製造方法 Granted JPS6321864A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16567186A JPS6321864A (ja) 1986-07-16 1986-07-16 半導体素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16567186A JPS6321864A (ja) 1986-07-16 1986-07-16 半導体素子の製造方法

Publications (2)

Publication Number Publication Date
JPS6321864A JPS6321864A (ja) 1988-01-29
JPH0528909B2 true JPH0528909B2 (zh) 1993-04-27

Family

ID=15816811

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16567186A Granted JPS6321864A (ja) 1986-07-16 1986-07-16 半導体素子の製造方法

Country Status (1)

Country Link
JP (1) JPS6321864A (zh)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5384579A (en) * 1976-12-29 1978-07-26 Fujitsu Ltd Manufacture for semiconductor device
JPS587065A (ja) * 1981-07-06 1983-01-14 株式会社竹中工務店 既存鉄筋コンクリ−ト造建物の耐震補強構造
JPS59123274A (ja) * 1982-12-28 1984-07-17 Fujitsu Ltd 半導体装置の製造方法
JPS60101960A (ja) * 1983-11-08 1985-06-06 Matsushita Electric Ind Co Ltd 半導体集積回路の製造方法
JPS61141167A (ja) * 1984-12-13 1986-06-28 Nippon Precision Saakitsutsu Kk 半導体装置の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5384579A (en) * 1976-12-29 1978-07-26 Fujitsu Ltd Manufacture for semiconductor device
JPS587065A (ja) * 1981-07-06 1983-01-14 株式会社竹中工務店 既存鉄筋コンクリ−ト造建物の耐震補強構造
JPS59123274A (ja) * 1982-12-28 1984-07-17 Fujitsu Ltd 半導体装置の製造方法
JPS60101960A (ja) * 1983-11-08 1985-06-06 Matsushita Electric Ind Co Ltd 半導体集積回路の製造方法
JPS61141167A (ja) * 1984-12-13 1986-06-28 Nippon Precision Saakitsutsu Kk 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS6321864A (ja) 1988-01-29

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees