JPH05283271A - Chip-shaped semiconductor porcelain component and its manufacture - Google Patents

Abstract

PURPOSE:To realize a chip-shaped semiconductor porcelain component wherein it can be surface-mounted, it can expand the effective area of a counter electrode, its reliability is high and its production efficiency is high. CONSTITUTION:In a chip-shaped semiconductor porcelain component, counter electrodes 13 are formed on both main faces of the surface and the rear of a grain-boundary-insulated semiconductor porcelain substrate 16. In the chip- shaped semiconductor porcelain component, corner parts between side faces on which external connection electrodes 14 have been formed are cut and grooves 12 are formed.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chip type semiconductor porcelain component using a grain boundary insulating type semiconductor porcelain containing strontium titanate as a main component and a method for manufacturing the same.

[0002]

2. Description of the Related Art Grain boundary insulating semiconductor porcelain containing strontium titanate as a main component has excellent characteristics as a multi-functional element such as a small-sized and large-capacity semiconductor porcelain capacitor or a voltage non-linear element having an electrostatic capacity. Therefore, it is widely used.

In the product form, electrodes were formed on both sides of a disk-shaped porcelain substrate, the whole of which was coated with resin, and had lead wires as external connection electrodes. Along with the demand for thinning and thinning and the development of IC circuits, a surface mountable chip type product form has been desired.

To meet such demands, a chip type capacitor has been proposed in which a counter electrode is formed in a porcelain body and the porcelain and the electrode are co-sintered to form a monolithic type capacitor.

However, the use of the grain boundary insulation type semiconductor porcelain containing strontium titanate as a main component to form a laminated chip shape results in a high firing temperature of 1400 ° C. or higher and an oxidation treatment for grain boundary insulation. Therefore, it was difficult to put it into practical use.

Also, a single layer chip-shaped component has been proposed for chipping a grain boundary insulating semiconductor ceramic containing strontium titanate as a main component.

A conventional chip type semiconductor ceramic component of this type is shown in FIGS. In the structure shown in FIG. 18, the counter electrodes 43 are formed on both front and back main surfaces of the semiconductor porcelain substrate 41, and the external connection electrodes 44 connected to either one of the front and back counter electrodes 43 are entirely formed on the front and rear side surfaces. Have been formed in the same way.

Alternatively, as shown in FIG. 19, a counter electrode 43 is formed substantially at the center of the semiconductor porcelain substrate 41 except for a part of the front and back main surfaces thereof, and the same as in the conventional example shown in FIG. In some cases, the electrodes 44 are entirely formed on the front and rear side surfaces.

Alternatively, as shown in FIG. 20, a counter electrode 43 is formed substantially at the center of the semiconductor ceramic substrate 41 except for a part of the front and back main surfaces thereof, and the external electrode is formed in the same manner as the conventional example shown in FIG. In some cases, the electrodes 44 are entirely formed on the front and rear side surfaces, and the glass insulating layers 45 are further formed on both side surfaces.

[0010]

However, in the above-mentioned conventional example, the area of the counter electrode 43 must be made large in order to obtain a large capacity, and when the area of the counter electrode 43 is widened, the semiconductor porcelain is increased. The distance from the side surface of the substrate 41 is shortened and reliability is reduced. On the contrary, in order to improve reliability, it is necessary to reduce the area of the counter electrode 43 or to form the glass insulating layer 45 for insulation on the side surface, which makes it difficult to obtain a large capacity, or There has been a problem in that there are manufacturing difficulties.

The present invention has been invented in view of the above-mentioned problems, and can be surface-mounted, can have a large effective counter electrode area, is highly reliable, and is relatively easy to manufacture. It is an object of the present invention to provide a chip type semiconductor ceramic component and a method for manufacturing the same.

[0012]

To achieve the above object, a chip-type semiconductor ceramic component according to the present invention is a chip-type semiconductor ceramic in which counter electrodes are formed on both front and back main surfaces of a grain boundary insulating semiconductor ceramic substrate. In the component, recesses are formed in the corners between the side surfaces on which the external connection electrodes are formed (1), and in the method for manufacturing a chip type semiconductor ceramic component according to (1) above, both front and back main (2) The chip according to (1) above, further comprising a step of subjecting a semiconductor porcelain substrate having a plurality of parallel grooves facing each other to the front and back sides to each other to perform grain boundary insulation treatment. (3) In the method for manufacturing a chip type semiconductor ceramic component according to the above (3), a plurality of parallel surfaces are provided on both front and back main surfaces. Face to face The semiconductor ceramic substrate having a groove, after performing grain boundary insulation treatment, is characterized by comprising the step of forming the glass insulating layer in the groove (4).

Further, in the chip-type semiconductor porcelain component according to the above (1), a groove is formed in the vicinity of a corner opposite to a connecting side between the external connection electrode and the counter electrode (5), Furthermore, in the method for manufacturing a chip-type semiconductor ceramic component according to the above (5), a plurality of parallel grooves facing each other in the front and back sides are formed on both main surfaces, and a plurality of front and back surface facing each other orthogonal to the grooves. It is characterized in that it includes a step of performing grain boundary insulation treatment on the semiconductor porcelain substrate in which the groove not formed is formed (6).

Further, in the chip-type semiconductor ceramic component according to the above (5), a glass insulating layer is formed in the recess and the groove (7), and in the chip-type semiconductor ceramic component according to the above (7). In the manufacturing method, a plurality of parallel grooves facing the front and back sides are formed on both the front and back main surfaces,
The method includes a step of forming a glass insulating layer in the groove after performing a grain boundary insulating treatment on a semiconductor porcelain substrate in which a plurality of grooves which are orthogonal to the groove and do not face each other are formed. (8).

Further, in the chip-type semiconductor porcelain component according to the above (1), a recess is formed at a corner between both main surfaces on which the counter electrodes are formed (9), and further, the above (9) ) In the method for manufacturing a chip-type semiconductor porcelain component described above, a semiconductor porcelain substrate in which a plurality of parallel parallel front and back grooves are formed on both main surfaces and a plurality of holes are formed between these grooves. The method is characterized in that it includes a step of performing grain boundary insulation treatment (10).

Further, the chip-type semiconductor ceramic component according to the above (5) is characterized in that a recess is formed at a corner between both main surfaces on which the counter electrodes are formed (11), and further, the above (11). ) In the method for manufacturing a chip-type semiconductor ceramic component as described above, a plurality of parallel parallel grooves facing each other are formed on both main surfaces of the front and back surfaces, and a plurality of grooves perpendicular to the groove are formed so as not to face each other. The method further comprises the step of subjecting the semiconductor ceramic substrate having a plurality of holes formed between the grooves facing each other to the grain boundary insulating treatment (12).

Further, in the chip-type semiconductor ceramic component according to (9) or (11), a glass insulating layer is formed in the recess and the groove (13), and the chip-type according to (13) above. The method for manufacturing a semiconductor porcelain component includes a step of forming a glass insulating layer in the groove and the hole after performing a grain boundary insulating treatment on the semiconductor porcelain substrate in which the groove and the hole are formed. (14).

[0018]

(Function) The above (1), (5), (9) and (11)
According to the configuration, the corners between the side surfaces on which the external connection electrodes are formed are cut to form recesses, or in addition to the recesses, the side opposite to the connection side corner between the external connection electrode and the counter electrode is formed. A groove is formed in the vicinity of the corner, or a corner is cut by cutting the corner between both main surfaces where the counter electrode is formed in addition to the recess, or in addition to the recess and the groove. Since the corners between the two main surfaces on which the opposing electrodes are formed are cut to form the recesses, the insulation is ensured in the recesses and the grooves.

Further, according to the manufacturing methods of (2), (6), (10) and (12) described above, a step of subjecting the semiconductor porcelain substrate having the recess and the groove formed to grain boundary insulation treatment. Therefore, the surfaces of these recesses and grooves are reliably insulated.

Further, the above (3), (7) and (1
According to the configuration of 3), since the glass insulating layer is formed in the recess and the groove, not only the reliability is further improved, but also the recess and the groove can be designed small, and the counter electrode can be formed. It becomes possible to take a large area such as.

Further, the above (4), (8) and (14)
According to the manufacturing method of, after performing the grain boundary insulation treatment,
Since the glass insulating layer is formed in the groove, it becomes easier to secure the insulating property as compared with the case where only the grain boundary insulating treatment is performed.

[0022]

Embodiments of a chip type semiconductor ceramic component and a method of manufacturing the same according to the present invention will be described below with reference to the drawings.

(Embodiment 1) FIGS. 1 to 4 are schematic perspective views and side views showing an embodiment of a method of manufacturing a chip type semiconductor ceramic component according to the present invention in the order of steps.

In the case of manufacturing the chip type semiconductor porcelain component according to this embodiment, first, a raw material powder for semiconductor porcelain containing strontium titanate as a main component is prepared, and a binder is mixed, and then press molding is performed to make the front and back main surfaces relative to each other. A sheet-shaped molded body having a plurality of grooves 12 facing each other and parallel to each other is formed. This sheet-shaped molded body is 800 to 1000 ° C. in air.
After removing the binder in the temperature range of
1450 in a reducing atmosphere consisting of 9% and 15-1% hydrogen
The semiconductor porcelain substrate 11 is fired in a temperature range of up to 1500 ° C.
Are produced (FIG. 1).

The obtained semiconductor porcelain substrate 11 is cut to a desired size along a cutting line shown by a chain line orthogonal to the groove 12 to form a strip-shaped substrate. Then, a diffusing agent containing Bi ₂ O ₃ as a main component is applied to both of the main surfaces, and 1100 to 125 in air.
Heat treatment for grain boundary insulation is performed in the temperature range of 0 ° C,
The grain boundary insulating type semiconductor ceramic substrate 16 is prepared (FIG. 2).

Silver paste is printed in a desired shape on the planes of both main surfaces of the front and back surfaces of the grain boundary insulating semiconductor ceramic substrate 16 excluding the grooves 12, and baking is performed in the temperature range of 750 to 860 ° C. in air. The counter electrode 13 is formed (FIG. 3).

Next, the groove 12 is used as a split groove and divided into individual element bodies. Finally, the external connection electrodes 14 connected to one of the counter electrodes 13 on the front and back main surfaces are formed into a desired shape.
The chip type semiconductor ceramic component 17 is formed by forming it on the side surface orthogonal to the groove 12 (FIG. 4).

As described above, in this embodiment, since the grain boundary insulating treatment is performed after forming the groove 12, the groove 12 is formed.
Even if the grain boundary insulation type semiconductor ceramic substrate 16 is cut in a later step using the groove as a split groove, the opposing electrodes 13 are surely insulated from each other, and a highly reliable chip type semiconductor ceramic component can be manufactured. In addition, by forming the groove 12, it is possible to increase the area of the counter electrode 13 and increase the capacitance. Furthermore, the groove 12 can be used as a split groove, and the chip-type semiconductor ceramic component 17 can be easily manufactured.

(Embodiment 2) FIGS. 5 (a) and 5 (b) are a schematic perspective view and a side view showing another embodiment of the chip type semiconductor ceramic component and the manufacturing method thereof according to the present invention.

In the same manner as in Example 1, a strip-shaped grain boundary insulation type semiconductor porcelain substrate 16 having counter electrodes 13 formed by baking silver plague on both front and back main surfaces was prepared (FIG. 3). In addition, insulating B ₂ O ₃ , SiO ₂ and Zn are provided in the grooves 12 on the front and back main surfaces of the grain boundary insulating semiconductor ceramic substrate 16 which face each other.
A glass paste containing O 2 as a main component is applied by printing, and baking is performed in the temperature range of 750 to 870 ° C. in air. Next, the groove 12 is used as a split groove and divided into individual element bodies. Finally, an external connection electrode 14 connected to one of the counter electrodes 13 on the front and back main surfaces is formed in a desired shape on the side surface orthogonal to the groove 12 to produce a chip-type semiconductor ceramic component 18 (FIG. 5).

As described above, in this embodiment, since the grain boundary insulating treatment is performed after the groove 12 is formed and the insulating glass paste is applied by printing in the groove 12, the groove 1 is formed.
Even if the grain boundary insulating semiconductor ceramic substrate 16 is cut in a later step using 2 as a split groove, the opposing electrodes 13 are surely insulated from each other,
It is possible to manufacture a highly reliable chip type semiconductor ceramic component. Further, by printing and coating the glass insulating layer 15 on the groove 12, the area of the counter electrode 13 can be made larger than that of the first embodiment, and the capacitance can be increased.

(Embodiment 3) FIGS. 6A and 6B are a schematic perspective view and a side view showing still another embodiment of a chip type semiconductor ceramic component and a method for manufacturing the same according to the present invention.

In the same manner as in Example 1, a strip-shaped grain boundary insulating semiconductor ceramic substrate 16 having counter electrodes 13 formed by baking a silver paste on both front and back main surfaces was prepared (FIG. 3). Further, an insulating glass paste containing B ₂ O ₃ , SiO ₂ , and ZnO as main components is printed and applied in the grooves 12 on the front and back main surfaces of the grain boundary insulating semiconductor ceramic substrate 16 facing each other and on the counter electrode 13. Then, baking is performed in the air in the temperature range of 750 to 870 ° C. to produce the chip-type semiconductor ceramic component 19 (FIG. 6).

As described above, in this embodiment, the grain boundary insulating treatment is performed after the groove 12 is formed, and the insulating glass paste is printed and applied in the groove 12 and on the counter electrode 13. Even if the grain boundary insulating semiconductor porcelain substrate 16 is cut in a later step using the groove 12 as a split groove, the opposing electrodes 13 are surely insulated from each other, and a highly reliable chip type semiconductor porcelain component can be manufactured. .. Further, by printing and coating the glass insulating layer 15 in the groove 12 and on the counter electrode 13, it is possible to further increase the area of the counter electrode 13.
The capacity can be increased. Further, the insulation between the counter electrodes 13 can be enhanced as compared with the second embodiment.

(Embodiment 4) FIGS. 7 to 10 are schematic perspective views and side views showing still another embodiment of the chip type semiconductor ceramic component and the method for manufacturing the same according to the present invention.

In the case of manufacturing the chip-type semiconductor porcelain component according to the present embodiment, first, a raw material powder for semiconductor porcelain containing strontium titanate as a main component is prepared, mixed with a binder, and then press-molded so as to be opposed to both front and back main surfaces. One sheet-shaped molded product is formed having a plurality of parallel grooves 22a facing each other and a plurality of parallel grooves 22b orthogonal to the grooves 22a and not facing each other. This sheet-shaped molded product was subjected to binder removal treatment in air at a temperature range of 800 to 1000 ° C., and then at a temperature range of 1450 to 1500 ° C. in a reducing atmosphere composed of 85 to 99% nitrogen and 15 to 1% hydrogen. Firing is performed to produce the semiconductor ceramic substrate 21 (FIG. 7).

The obtained semiconductor porcelain substrate 21 is cut to a desired size along a cutting line shown by a chain line parallel to the grooves 22b which do not face each other on the front and back main surfaces to form a strip-shaped substrate. A diffusing agent containing Bi ₂ O ₃ as a main component is applied to both main surfaces and heat treatment for grain boundary insulation is performed in the temperature range of 1100 to 1250 ° C. in the air. Is created (FIG. 8).

Silver paste is printed in a desired shape on the planes of both main surfaces of the front and back surfaces of the grain boundary insulation type semiconductor ceramic substrate 26 excluding the grooves 22a and 22b, and baking is performed in the air at a temperature range of 750 to 860 ° C. The counter electrode 23 is formed (FIG. 9).

Next, the groove 22a facing the front and back is used as a split groove to divide the element into individual bodies. Finally, the external connection electrode 24 connected to one of the opposing electrodes 23 on the front and back main surfaces is formed in a desired shape, and the groove 22b is formed on the parallel side surfaces to produce a chip-type semiconductor ceramic component 27 (FIG. 10). ..

As described above, in this embodiment, the groove 22a is formed.
Since the grain boundary insulation treatment is performed after the formation of the
Even if the grain boundary insulating semiconductor ceramic substrate 26 is cut in a later step by using the groove 2a as a split groove, the opposing electrodes 23 are surely insulated from each other, and a highly reliable chip type semiconductor ceramic component can be manufactured. Further, since the counter electrode 23 and the external connection electrode 24 are reliably insulated by forming the groove 22b, it is possible to make the area of the counter electrode 23 large.
The capacity can be increased. Furthermore, the groove 22a can be used as a split groove, and the chip-type semiconductor ceramic component 27 can be easily manufactured.

(Embodiment 5) FIGS. 11A and 11B are a schematic perspective view and a side view showing still another embodiment of the chip type semiconductor ceramic component and the method for manufacturing the same according to the present invention.

In the same manner as in Example 4, a strip-shaped grain boundary insulation type semiconductor porcelain substrate 26 having counter electrodes 23 formed by baking silver paste on both front and back main surfaces was prepared (FIG. 9). Grooves 22 in the grooves 22a facing each other on the front and back main surfaces of the grain boundary insulating type semiconductor ceramic substrate 26 and perpendicular to the grooves 22a.
A glass paste 25 containing insulating B ₂ O ₃ , SiO ₂ , and ZnO as main components is printed and applied in b, and the temperature is 750 to 870 ° C. in air.
Bake in the temperature range of. Next, the grooves 22a facing each other on the front and back main surfaces are divided into individual elements as split grooves.
Finally, an external connection electrode 24 connected to one of the opposite electrodes 23 on the front and back main surfaces is formed in a desired shape on the side surface parallel to the groove 22b to produce a chip-type semiconductor ceramic component 28 (FIG. 11).

As described above, in this embodiment, the groove 22a is formed.
Since the grain boundary insulation treatment is performed after the formation of the
Even if the grain boundary insulating semiconductor ceramic substrate 26 is cut in a later step using 2a as a split groove, the opposing electrodes 23 are surely insulated from each other, and a chip type semiconductor ceramic component having higher reliability than that of the fourth embodiment is provided. Can be manufactured. Further, by forming the groove 22b, not only the counter electrode 23 and the external connection electrode 24 are reliably insulated, but also the counter electrode 23 can have a large area and the capacity can be increased.

(Embodiment 6) FIGS. 12 to 15 are schematic perspective views and side views showing still another embodiment of the chip type semiconductor ceramic component and the manufacturing method thereof according to the present invention.

In the case of manufacturing the chip type semiconductor porcelain substrate according to this example, first, a raw material powder for semiconductor porcelain containing strontium titanate as a main component is prepared, and a binder is mixed, followed by press molding so that the front and back main surfaces are opposed to each other. A plurality of parallel grooves 32a facing each other and a plurality of parallel grooves 32b orthogonal to the grooves 32a that do not face each other are provided, and the groove 32a at the intersection of the cutting line and the groove 32a shown by the chain line in the figure. A sheet-shaped molded body having a hole 37 therein is formed. This sheet-shaped molded product was subjected to binder removal treatment in the temperature range of 800 to 1000 ° C. in air, and then 1450 to 150 in a reducing atmosphere containing 85 to 99% of nitrogen and 15 to 1% of hydrogen.
Firing is performed in the temperature range of 0 ° C. to manufacture the semiconductor ceramic substrate 31 (FIG. 12).

On both main surfaces of the obtained semiconductor porcelain substrate 31,
Apply a diffusing agent containing Bi ₂ O ₃ as the main component, and use 110 in air.
A heat treatment for grain boundary insulation is performed in a temperature range of 0 to 1250 ° C., and thereafter, the grain boundary insulation type semiconductor porcelain substrate 36 is cut to a desired size by a cutting line shown by a chain line parallel to the groove 32b.
Are produced (FIG. 13).

Silver paste is printed in a desired shape on the planes of both main surfaces of the front and back surfaces of the grain boundary insulating semiconductor ceramic substrate 36 except the grooves 32a and 32b, and baking is performed in the air at a temperature range of 750 to 860 ° C. , Counter electrode 33 is formed (FIG. 1
4).

Next, the grooves 32a facing each other on the front and back sides are cut as split grooves and divided into individual element bodies. Finally, the external connection electrode 3 connected to one of the opposite electrodes 33 on both the front and back main surfaces
4 is formed in a desired shape on the side surface parallel to the groove 32b to produce the chip-type semiconductor ceramic component 38 (FIG. 15).

Thus, in this embodiment, the groove 32
Since the grain boundary insulating treatment is performed after forming a and 32b, even if the grain boundary insulating semiconductor ceramic substrate 36 is cut in a later step using the groove 32a as a split groove, the opposing electrodes 33 are reliably insulated. Further, since the counter electrode 33 and the external connection electrode 34 are also reliably insulated, it is possible to manufacture a more reliable chip type semiconductor ceramic component. Further, by forming the holes 37, the external connection electrodes 34 are reliably insulated from each other, and the reliability is further enhanced.

(Embodiment 7) FIGS. 16A and 16B are a schematic perspective view and a side view showing still another embodiment of a chip type semiconductor ceramic component and a method for manufacturing the same according to the present invention.

In the same manner as in Example 6, a grain boundary insulating semiconductor ceramic substrate 36 having counter electrodes 33 formed by baking silver paste on both front and back main surfaces was prepared (FIG. 4).
Insulating B ₂ O ₃ , SiO ₂ , and ZnO are provided in the grooves 32a facing each other on the front and back main surfaces of the grain boundary insulating semiconductor ceramic substrate 36, in the grooves 32b orthogonal to the grooves 32a, and in the holes 37 penetrating the front and back. The glass paste 35 as a main component is applied by printing, and baking is performed in the air at a temperature range of 750 to 870 ° C. Next, the grooves 32a facing the front and back sides were divided into individual element bodies as split grooves. Finally, the external connection electrode 34 connected to one of the counter electrodes 33 on the front and back main surfaces is formed into a groove 32b having a desired shape.
The chip-type semiconductor porcelain component 39 is formed by forming it on the side surface parallel to (FIG. 16).

Thus, in this embodiment, the groove 32
Since the grain boundary insulating treatment is performed after the formation of the holes a, 32b and the holes 37, and the glass insulating layer 35 is applied by printing, the grain boundary insulating semiconductor ceramic substrate 36 is used as a split groove in the subsequent step. Even when cut, the counter electrodes 33 are reliably insulated, the counter electrodes 33 and the external connection electrodes 34 are also reliably insulated, and the external connection electrodes 34 are also reliably insulated. Furthermore, a highly reliable chip-type semiconductor ceramic component can be manufactured. Further, the area of the counter electrode 33 can be widened, and the capacitance can be increased.

FIG. 17 is a schematic perspective view showing still another embodiment of the chip type semiconductor ceramic component and the manufacturing method thereof according to the present invention.

In the chip type semiconductor component according to this embodiment,
As shown in FIG. 17, the external connection electrode 34 and the counter electrode 3
3 is cut off in the vicinity of the corner on the side opposite to the corner on the side of connection with 3, and a groove 32a is formed in the corner between both main surfaces on which the counter electrode 33 is formed.
Also, holes 37 are formed at both corners of the external connection electrode 34.

Thus, in this embodiment, the groove 32
Since the grain boundary insulating treatment is performed after the formation of the holes a, 32b and the holes 37, even if the grain boundary insulating semiconductor ceramic substrate 36 is cut in a later step by using the groove 32a as a split groove, the counter electrode 3
3 is surely insulated, and the counter electrode 33 and the external connection electrode 3
It is possible to manufacture a highly reliable chip-type semiconductor porcelain component because insulation is surely made between the four parts and also between the external connection electrodes 34. Further, as compared with the seventh embodiment, the area of the counter electrode 33 can be increased,
The capacity can be increased.

[0056]

As is apparent from the above description, in the chip-type semiconductor ceramic component according to the above-mentioned claims (1), (5), (9) and (11), the external connection electrode is formed. Each part between the side surfaces is cut to form a recess,
Or, in addition to the concave portion, a groove is formed in the vicinity of a corner on the side opposite to the connection side between the external connection electrode and the counter electrode, or a corner between both main surfaces in which the counter electrode is formed in addition to the concave portion. The part is cut to form a recess, or the corner between both main surfaces on which the counter electrode is formed in addition to the recess and the groove is cut to form a recess. Insulation is secured in the part.

According to the manufacturing method of claims (2), (6), (10) and (12), the step of subjecting the semiconductor porcelain substrate having the recess and the groove formed to grain boundary insulation treatment. Therefore, the surfaces of these recesses and grooves are reliably insulated.

Further, claims (3), (7) and (13)
In the chip type semiconductor porcelain component, since the glass insulating layer is formed in the recess and the groove, not only the reliability is further improved, but also the recess and the groove can be designed small. It is possible to increase the area of the counter electrode and the like.

Further, according to the manufacturing method of claims (4), (8) and (14), since the glass insulating layer is formed in the groove after the grain boundary insulating treatment is performed, It becomes easier to secure the insulation property than the case where only the field insulation treatment is performed.

Therefore, surface mounting is possible, a large effective counter electrode area can be acquired, and a highly reliable chip-type semiconductor ceramic component with high production efficiency can be easily manufactured.

[Brief description of drawings]

FIG. 1 is a schematic perspective view showing one step in one embodiment of a method for manufacturing a chip-type semiconductor ceramic component according to the present invention.

FIG. 2 is a schematic perspective view showing one step in one embodiment of the method for manufacturing the chip-type semiconductor ceramic component according to the present invention.

FIG. 3 is a schematic perspective view showing one step in one embodiment of the method for manufacturing a chip-type semiconductor ceramic component according to the present invention.

4 (a) and 4 (b) are a schematic perspective view and a side view showing an embodiment of a chip type semiconductor ceramic component according to the present invention.

5 (a) and 5 (b) are a schematic perspective view and a side view showing another embodiment of the chip-type semiconductor ceramic component according to the present invention.

6 (a) and 6 (b) are a schematic perspective view and a side view showing still another embodiment of the chip-type semiconductor ceramic component according to the present invention.

FIG. 7 is a schematic perspective view showing a step in another embodiment of the method for manufacturing the chip-type semiconductor ceramic component according to the present invention.

FIG. 8 is a schematic perspective view showing a step in another embodiment of the method for manufacturing a chip-type semiconductor ceramic component according to the present invention.

FIG. 9 is a schematic perspective view showing a step in another embodiment of the method for manufacturing the chip-type semiconductor ceramic component according to the present invention.

10 (a) and 10 (b) are a schematic perspective view and a side view showing another embodiment of the chip type semiconductor ceramic component according to the present invention.

11A and 11B are a schematic perspective view and a side view showing still another embodiment of the chip-type semiconductor ceramic component according to the present invention.

FIG. 12 is a schematic perspective view showing a step in yet another embodiment of the method for manufacturing a chip-type semiconductor ceramic component according to the present invention.

FIG. 13 is a schematic perspective view showing a step in another embodiment of the method for manufacturing the chip-type semiconductor ceramic component according to the present invention.

FIG. 14 is a schematic perspective view showing a step in another embodiment of the method for manufacturing the chip-type semiconductor ceramic component according to the present invention.

15 (a) and 15 (b) are a schematic perspective view and a side view showing another embodiment of the chip type semiconductor ceramic component according to the present invention.

16 (a) and 16 (b) are a schematic perspective view and a side view showing still another embodiment of the chip-type semiconductor ceramic component according to the present invention.

FIG. 17 is a schematic side view showing another embodiment of the method for manufacturing a chip-type semiconductor ceramic component according to the present invention.

FIG. 18 is a schematic perspective view showing a conventional chip type semiconductor ceramic component.

FIG. 19 is a schematic perspective view showing a conventional chip-type semiconductor ceramic component.

FIG. 20 is a schematic perspective view showing a conventional chip-type semiconductor ceramic component.

[Explanation of symbols]

 11, 21, 31 Semiconductor porcelain substrate 12, 22a, 32a Groove (recess) 22b, 32b Groove 13, 23, 33 Counter electrode 14, 24, 34 External connection electrode 15, 25, 35 Glass insulating layer 16, 26, 36 grains Field-insulating semiconductor porcelain substrate 37 holes

Claims (14)

[Claims] 1. A chip-type semiconductor ceramic component in which opposing electrodes are formed on both front and back main surfaces of a grain boundary insulating semiconductor ceramic substrate, and recesses are formed at corners between side surfaces on which external connection electrodes are formed. Chip type semiconductor porcelain parts characterized by the above. 2. The method according to claim 1, further comprising a step of subjecting a semiconductor porcelain substrate having a plurality of parallel grooves facing the front and back sides to each other on the front and back main surfaces to grain boundary insulating treatment. For manufacturing a chip-type semiconductor porcelain component. 3. The chip type semiconductor ceramic component according to claim 1, wherein a glass insulating layer is formed in the recess. 4. A step of forming a glass insulating layer in the groove after subjecting a semiconductor porcelain substrate having a plurality of parallel grooves facing the front and back sides to each other on the front and back main surfaces to grain boundary insulation treatment. The method for manufacturing a chip-type semiconductor ceramic component according to claim 3, further comprising: 5. The chip-type semiconductor porcelain component according to claim 1, wherein a groove is formed in the vicinity of a corner on the side opposite to the corner on the side of connection between the external connection electrode and the counter electrode. 6. A semiconductor porcelain substrate having a plurality of parallel grooves facing each other on the front and back sides and facing each other, and a plurality of grooves not intersecting with each other perpendicular to the grooves are formed on the semiconductor ceramic substrate. The chip-type semiconductor porcelain component according to claim 5, including a step of performing an insulation treatment. 7. The chip type semiconductor ceramic component according to claim 5, wherein a glass insulating layer is formed in the recess and the groove. 8. A grain boundary is formed on a semiconductor ceramic substrate in which a plurality of parallel grooves facing each other in the front and back sides are formed on both front and back main surfaces, and a plurality of grooves not intersecting the front and back sides orthogonal to the grooves are formed. 8. The method for manufacturing a chip-type semiconductor ceramic component according to claim 7, further comprising the step of forming a glass insulating layer in the groove after performing an insulating treatment. 9. The chip-type semiconductor ceramic component according to claim 1, wherein a recess is formed at a corner between both main surfaces on which the counter electrodes are formed. 10. A grain boundary insulating treatment is applied to a semiconductor porcelain substrate having a plurality of parallel grooves facing each other and facing each other and having a plurality of holes formed between the grooves. The method for manufacturing a chip-type semiconductor ceramic component according to claim 9, which includes a step. 11. The chip-type semiconductor ceramic component according to claim 5, wherein a recess is formed at a corner between both main surfaces on which the counter electrodes are formed. 12. A plurality of parallel grooves that face each other and face each other are formed on both main surfaces of the front and back, and a plurality of grooves that are orthogonal to each other and do not face each other are formed. The method of manufacturing a chip-type semiconductor ceramic component according to claim 11, further comprising a step of subjecting a semiconductor ceramic substrate having a plurality of holes formed therein to grain boundary insulation treatment. 13. The chip type semiconductor ceramic component according to claim 9, wherein a glass insulating layer is formed in the recess and the groove. 14. A step of forming a glass insulating layer in the groove and in the hole after subjecting a semiconductor ceramic substrate having the groove and the hole to grain boundary insulation treatment. The method for manufacturing a chip-type semiconductor ceramic component according to claim 13.