JPH05275401A - Etching method for sacrifice layer - Google Patents
Etching method for sacrifice layerInfo
- Publication number
- JPH05275401A JPH05275401A JP6606592A JP6606592A JPH05275401A JP H05275401 A JPH05275401 A JP H05275401A JP 6606592 A JP6606592 A JP 6606592A JP 6606592 A JP6606592 A JP 6606592A JP H05275401 A JPH05275401 A JP H05275401A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- gas
- sacrificial layer
- sacrifice layer
- etched
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005530 etching Methods 0.000 title claims abstract description 34
- 238000000034 method Methods 0.000 title claims description 22
- 239000007789 gas Substances 0.000 claims abstract description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 11
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
- 239000012808 vapor phase Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 11
- 229910052710 silicon Inorganic materials 0.000 abstract description 9
- 239000010703 silicon Substances 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 239000007788 liquid Substances 0.000 abstract description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 4
- 229920005591 polysilicon Polymers 0.000 abstract description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 3
- 229910001873 dinitrogen Inorganic materials 0.000 abstract description 3
- 125000001153 fluoro group Chemical group F* 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 abstract description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 2
- 229910000040 hydrogen fluoride Inorganic materials 0.000 abstract 2
- 238000010586 diagram Methods 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000004108 freeze drying Methods 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H05K999/00—
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、構造物が基板に付着す
る恐れのない犠牲層エッチングの方法に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of sacrificial layer etching in which a structure does not adhere to a substrate.
【０００２】[0002]
【従来の技術】犠牲層エッチング技術とは、構造を形成
する層（構造層）と基板との間に犠牲層を設け、最後に
犠牲層だけを選択的にエッチングして取り除く事により
構造物と基板との間に空隙を作る技術をいう。図７は従
来より一般に使用されている従来例の要部構成説明図
で、例えば、平成３年電気学会全国大会講演論文集
［４］ 論文番号３９７ 「犠牲層エッチングにおける
新しい凍結乾燥法」に示されていもので、片持ち梁の製
作に適用した例である。 （１）図８に示す如く、基板１上で空隙となるべき場所
に犠牲層２を作る。 （２）図９に示す如く、犠牲層２の上に構造層３を設
け、必要な形にエッチングする。 （３）図１０に示す如く、犠牲層３をエッチングで取り
除き、梁をリリースし、リンスした後、乾燥して片持ち
梁を得る。2. Description of the Related Art A sacrificial layer etching technique is a structure in which a sacrificial layer is provided between a layer forming a structure (structural layer) and a substrate, and finally only the sacrificial layer is selectively etched and removed. It is a technique to create a gap between the substrate and the substrate. FIG. 7 is an explanatory view of a main part configuration of a conventional example which has been generally used, and is shown in, for example, Proceedings of the 1st Annual Meeting of the Institute of Electrical Engineers of Japan [4] Paper No. 397 “New Freeze Drying Method in Sacrificial Layer Etching”. This is an example applied to the production of a cantilever. (1) As shown in FIG. 8, a sacrificial layer 2 is formed on the substrate 1 at a place to be a void. (2) As shown in FIG. 9, the structural layer 3 is provided on the sacrificial layer 2 and is etched into a required shape. (3) As shown in FIG. 10, the sacrificial layer 3 is removed by etching, the beam is released, rinsed, and dried to obtain a cantilever beam.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、この様
な装置においては、 （１）製造プロセスにおいて、リンス後の乾燥時に液の
表面張力により犠牲層の両面の梁と基板とが吸い付けら
れて、付着してしまい、簡単に剥がせなくなる現象がし
ばしば問題となる。この対策として、液を乾燥する前に
凍結し、真空中で昇華する（フリーズ＆ドライ法）。し
かし、この方法においては、昇華中の溶解を防止するた
め、ウエハーの温度制御が必要である。昇華完了後、大
気中に出す時、大気中の水分の結露を防止する必要があ
り、複雑で、工程が不安定な欠点を有する。However, in such a device, (1) in the manufacturing process, the beams on both sides of the sacrificial layer and the substrate are sucked by the surface tension of the liquid during drying after rinsing, The phenomenon that they adhere and cannot be easily peeled off is often a problem. As a countermeasure against this, the liquid is frozen before being dried and sublimated in a vacuum (freeze & dry method). However, this method requires temperature control of the wafer to prevent dissolution during sublimation. After sublimation is completed, it is necessary to prevent dew condensation of moisture in the atmosphere when it is put into the atmosphere, which is a complicated and unstable process.
【０００４】（２）フリーズドライ後のシリコン或いは
ポリシリコンの表面は、０Ｈ-基がシリコン原子の余っ
た結合に結合している。０Ｈ-基は容易に他の０Ｈ-基と
結合してＨ2Ｏを発生し、シリコン原子同志をＯで結合
するため、酸化シリコンのエッチング後の両面は付着し
易い面になつている。本発明は、この問題点を解決する
ものである。本発明の目的は、構造物が基板に付着する
恐れのない犠牲層エッチングの方法を提供するにある。(2) On the surface of silicon or polysilicon after freeze-drying, OH - groups are bonded to excess bonds of silicon atoms. The 0H - group easily combines with other 0H - groups to generate H 2 O, and the silicon atoms are bonded by O, so that both surfaces after the etching of the silicon oxide are easily attached. The present invention solves this problem. It is an object of the invention to provide a method of sacrificial layer etching without the risk of structures adhering to the substrate.
【０００５】[0005]
【課題を解決するための手段】この目的を達成するため
に、本発明は、酸化シリコンを主成分とする犠牲層エッ
チングの方法において、前記犠牲層をふっか水素ガス及
び微量の水蒸気を含有するガス中で気相エッチングする
ようにした事を特徴とする犠牲層エッチングの方法を採
用した。To achieve this object, the present invention provides a method for etching a sacrificial layer containing silicon oxide as a main component, wherein the sacrificial layer contains fluffy hydrogen gas and a trace amount of water vapor. A method of etching a sacrificial layer, which is characterized in that vapor phase etching is performed in a gas, is adopted.
【０００６】[0006]
【作用】以上の製造方法において、犠牲層をふっか水素
ガス及び微量の水蒸気を含有するガス中で気相エッチン
グする。以下、実施例に基づき詳細に説明する。In the above manufacturing method, the sacrificial layer is vapor-phase etched in a gas containing fluffy hydrogen gas and a slight amount of water vapor. Hereinafter, detailed description will be given based on examples.
【０００７】[0007]
【実施例】図１〜図３は、本発明の一実施例の製造方法
説明図で、片持ち梁の製作に適用した例である。 （ａ）図１に示す如く、シリコンの基板１１上で空隙と
なるべき場所に酸化シリコンの犠牲層１２を作る。 （ｂ）図２に示す如く、犠牲層１２の上にポリシリコン
の構造層１３を設け、必要な形にエッチングする。 （ｃ）図３に示す如く、犠牲層１２を、気相エッチング
で取り除き、梁をリリースし、リンスした後、乾燥して
片持ち梁を得る。1 to 3 are explanatory views of a manufacturing method according to an embodiment of the present invention, which is an example applied to manufacture of a cantilever. (A) As shown in FIG. 1, a sacrificial layer 12 of silicon oxide is formed on a silicon substrate 11 at a place to be a void. (B) As shown in FIG. 2, a structural layer 13 of polysilicon is provided on the sacrificial layer 12 and is etched into a required shape. (C) As shown in FIG. 3, the sacrificial layer 12 is removed by vapor phase etching, the beam is released, rinsed, and then dried to obtain a cantilever beam.
【０００８】以上の製造方法において、犠牲層１２を例
えば、窒素ガス９５％、ふつか水素ガス４．９９％、水
蒸気０．０１％で気相エッチングする。図４に、本発明
のエッチング装置を示す。図４において、Ａはチャンバ
ー、Ｂは試料台、Ｃはエッチングされるウエハーを示
す。この場合、エッチングガスと酸化シリコンとの反応
は、 （ＳｉＯ2＋ＨＦ＋Ｈ2Ｏ）→（ＳｉＦ4↑＋Ｈ2Ｏ↑）In the above manufacturing method, the sacrificial layer 12 is vapor-phase etched with, for example, 95% nitrogen gas, 4.99% free hydrogen gas, and 0.01% water vapor. FIG. 4 shows the etching apparatus of the present invention. In FIG. 4, A is a chamber, B is a sample stage, and C is a wafer to be etched. In this case, the reaction between the etching gas and silicon oxide is (SiO 2 + HF + H 2 O) → (SiF 4 ↑ + H 2 O ↑)
【０００９】ふっかシリコン（ＳｉＦ4）と水分（Ｈ
2Ｏ）を気化して取去るに十分の窒素ガス（Ｎ2）を流し
て液化を防止する。従って、図１０従来例に示すような
液の表面張力による付着を防止できる。図１０従来例で
は、酸化シリコン（ＳｉＯ2）エッチング後、シリコン
の表面は、図５の様になっており、ポリシリコンとシリ
コンとは容易に結合し易く、図６に示す様に強固に結合
する。Soft silicon (SiF 4 ) and moisture (H
Sufficient nitrogen gas (N 2 ) is passed to vaporize and remove ( 2 O) to prevent liquefaction. Therefore, the adhesion due to the surface tension of the liquid as shown in the conventional example of FIG. 10 can be prevented. FIG. 10 In the conventional example, after the silicon oxide (SiO 2 ) etching, the surface of the silicon is as shown in FIG. 5, and the polysilicon and the silicon are easily bonded to each other and firmly bonded to each other as shown in FIG. To do.
【００１０】一方、本発明では、エッチング後は、シリ
コン表面は、図７に示す如く、ふっそ原子でターミネイ
トされており、この表面は極めて不活性で、９００°Ｃ
の熱処理にも安定である。このことは、例えば、応用物
理 第５９巻 第１１号（１９９０）頁１５０８ 「無
水ＨＦガスクリーニング」の「５．ＨＦガスクリーニン
グ表面の評価」の項に示されている。従って、エッチン
グによる犠牲層１３の酸化シリコンエッチングは、エッ
チング工程での付着が生じないだけでなく、エッチング
後の表面も不活性になり、付着防止に極めて効果が大き
い。On the other hand, in the present invention, after etching, the silicon surface is terminated with fluorine atoms as shown in FIG. 7, and this surface is extremely inert and is 900 ° C.
It is also stable to heat treatment. This is shown, for example, in the section "5. Evaluation of HF gas cleaning surface" of "Applied Physics Vol. 59, No. 11 (1990) page 1508" anhydrous HF gas cleaning ". Therefore, the silicon oxide etching of the sacrificial layer 13 by etching not only causes no adhesion in the etching step, but also makes the surface after etching inactive, which is extremely effective in preventing adhesion.
【００１１】この結果、 （１）酸化シリコンのエッチングを気相のふっか水素ガ
スでエッチングすることにより、液の表面張力による付
着を防止できる。 （２）エッチングされて現れたシリコンの表面を、ふっ
そ原子でターミネイトする事により、付着を防止でき
る。なお、犠牲層１３は酸化シリコンを主成分としたＣ
ＶＤ膜でもよい。基板１１と構造体１２は、金属や窒化
シリコン炭化シリコン窒化アルミ等でカバーされていて
もよい。As a result, (1) by etching the silicon oxide with gas-phase fluffy hydrogen gas, the adhesion due to the surface tension of the liquid can be prevented. (2) Adhesion can be prevented by terminating the surface of silicon exposed by etching with fluff atoms. The sacrificial layer 13 is C containing silicon oxide as a main component.
It may be a VD film. The substrate 11 and the structure 12 may be covered with metal, silicon nitride silicon carbide aluminum nitride, or the like.
【００１２】[0012]
【発明の効果】以上説明したように、本発明は、酸化シ
リコンを主成分とする犠牲層エッチングの方法におい
て、前記犠牲層をふっか水素ガス及び微量の水蒸気を含
有するガス中で気相エッチングするようにした事を特徴
とする犠牲層エッチングの方法を採用した。As described above, according to the present invention, in the method of etching a sacrificial layer containing silicon oxide as a main component, the sacrificial layer is vapor-phase etched in a gas containing fluffy hydrogen gas and a trace amount of water vapor. The method of etching the sacrificial layer is adopted.
【００１３】この結果、 （１）酸化シリコンのエッチングを気相のふっか水素ガ
スでエッチングすることにより、液の表面張力による付
着を防止できる。 （２）エッチングされて現れたシリコンの表面を、ふっ
そ原子でターミネイトする事により、付着を防止でき
る。As a result, (1) by etching the silicon oxide with a vapor-phase fluffy hydrogen gas, the adhesion due to the surface tension of the liquid can be prevented. (2) Adhesion can be prevented by terminating the surface of silicon exposed by etching with fluff atoms.
【００１４】従って、本発明によれば、構造物が基板に
付着する恐れのない犠牲層エッチングの方法を実現する
ことが出来る。Therefore, according to the present invention, it is possible to realize a method for etching a sacrifice layer without the risk that the structure will adhere to the substrate.
【図１】本発明の一実施例の犠牲層形成工程説明図であ
る。FIG. 1 is a diagram illustrating a sacrifice layer forming process according to an embodiment of the present invention.
【図２】本発明の一実施例の構造層形成工程説明図であ
る。FIG. 2 is a diagram illustrating a structural layer forming process according to an embodiment of the present invention.
【図３】本発明の一実施例のエッチング工程説明図であ
る。FIG. 3 is an explanatory diagram of an etching process according to an embodiment of the present invention.
【図４】本発明の一実施例のエッチング装置説明図であ
る。FIG. 4 is an explanatory diagram of an etching apparatus according to an embodiment of the present invention.
【図５】本発明の一実施例の動作説明図である。FIG. 5 is an operation explanatory diagram of the embodiment of the present invention.
【図６】本発明の一実施例の動作説明図である。FIG. 6 is an operation explanatory diagram of the embodiment of the present invention.
【図７】本発明の一実施例の動作説明図である。FIG. 7 is an operation explanatory diagram of the embodiment of the present invention.
【図８】従来より一般に使用されている従来例の犠牲層
形成工程説明図である。FIG. 8 is an explanatory view of a conventional sacrificial layer forming process which is generally used.
【図９】従来より一般に使用されている従来例の構造層
形成工程説明図である。FIG. 9 is an explanatory diagram of a structure layer forming process of a conventional example that is generally used conventionally.
【図１０】従来より一般に使用されている従来例のエッ
チング工程説明図である。FIG. 10 is an explanatory diagram of an etching process of a conventional example that is generally used conventionally.
１１…基板 １２…犠牲層 １３…構造層 Ａ…チャンバー Ｂ…試料台 Ｃ…ウエハー 11 ... Substrate 12 ... Sacrificial layer 13 ... Structural layer A ... Chamber B ... Sample stage C ... Wafer
Claims (1)
ングの方法において、 前記犠牲層をふっか水素ガス及び微量の水蒸気を含有す
るガス中で気相エッチングするようにした事を特徴とす
る犠牲層エッチングの方法。1. A method of etching a sacrificial layer containing silicon oxide as a main component, wherein the sacrificial layer is vapor-phase etched in a gas containing fluffy hydrogen gas and a trace amount of water vapor. Method of layer etching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6606592A JPH05275401A (en) | 1992-03-24 | 1992-03-24 | Etching method for sacrifice layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6606592A JPH05275401A (en) | 1992-03-24 | 1992-03-24 | Etching method for sacrifice layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05275401A true JPH05275401A (en) | 1993-10-22 |
Family
ID=13305082
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6606592A Pending JPH05275401A (en) | 1992-03-24 | 1992-03-24 | Etching method for sacrifice layer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05275401A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6680792B2 (en) | 1994-05-05 | 2004-01-20 | Iridigm Display Corporation | Interferometric modulation of radiation |
| US6710908B2 (en) | 1994-05-05 | 2004-03-23 | Iridigm Display Corporation | Controlling micro-electro-mechanical cavities |
| US6867896B2 (en) | 1994-05-05 | 2005-03-15 | Idc, Llc | Interferometric modulation of radiation |
| US7022244B2 (en) | 2002-08-30 | 2006-04-04 | Denso Corporation | Method and apparatus for generation of fine particles |
| US7126738B2 (en) | 1995-05-01 | 2006-10-24 | Idc, Llc | Visible spectrum modulator arrays |
| US7547642B2 (en) | 2004-12-15 | 2009-06-16 | Denso Corporation | Micro-structure manufacturing method |
| US8014059B2 (en) * | 1994-05-05 | 2011-09-06 | Qualcomm Mems Technologies, Inc. | System and method for charge control in a MEMS device |
-
1992
- 1992-03-24 JP JP6606592A patent/JPH05275401A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6680792B2 (en) | 1994-05-05 | 2004-01-20 | Iridigm Display Corporation | Interferometric modulation of radiation |
| US6710908B2 (en) | 1994-05-05 | 2004-03-23 | Iridigm Display Corporation | Controlling micro-electro-mechanical cavities |
| US6867896B2 (en) | 1994-05-05 | 2005-03-15 | Idc, Llc | Interferometric modulation of radiation |
| US8014059B2 (en) * | 1994-05-05 | 2011-09-06 | Qualcomm Mems Technologies, Inc. | System and method for charge control in a MEMS device |
| US7126738B2 (en) | 1995-05-01 | 2006-10-24 | Idc, Llc | Visible spectrum modulator arrays |
| US7022244B2 (en) | 2002-08-30 | 2006-04-04 | Denso Corporation | Method and apparatus for generation of fine particles |
| US7547642B2 (en) | 2004-12-15 | 2009-06-16 | Denso Corporation | Micro-structure manufacturing method |
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