JPH05275214A - Resistor - Google Patents
ResistorInfo
- Publication number
- JPH05275214A JPH05275214A JP4100430A JP10043092A JPH05275214A JP H05275214 A JPH05275214 A JP H05275214A JP 4100430 A JP4100430 A JP 4100430A JP 10043092 A JP10043092 A JP 10043092A JP H05275214 A JPH05275214 A JP H05275214A
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- Prior art keywords
- resistance
- resistor
- mol
- sintered body
- film
- Prior art date
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、抵抗特性のばらつきを
防止でき、かつ湿度等に対する耐環境性を向上できると
ともに、電力容量を大きくできるようにした抵抗体に関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resistor capable of preventing variations in resistance characteristics, improving environmental resistance to humidity and the like, and increasing power capacity.
【０００２】[0002]
【従来の技術】従来から、Ｒｕ酸化物，又はＲｕ化合物
を主体としたサーメット抵抗体は精度の優れた抵抗素子
として広く用いられている。このような抵抗体は、例え
ばアルミナ基板の表面に、上記Ｒｕ酸化物等からなる抵
抗ペーストを印刷して厚膜の抵抗膜を形成し、これを80
0 〜900 ℃で焼き付ける。そして上記アルミナ基板の抵
抗膜の表面にガラスペーストを塗布した後、焼き付けて
ガラス膜を形成し、これにより湿度等に対する耐環境性
を向上するようにしている。2. Description of the Related Art Conventionally, a cermet resistor mainly composed of Ru oxide or Ru compound has been widely used as a resistive element having excellent accuracy. Such a resistor has a thick resistive film formed by printing a resistive paste made of the above Ru oxide on the surface of an alumina substrate.
Bake at 0 to 900 ° C. Then, a glass paste is applied to the surface of the resistance film of the alumina substrate and then baked to form a glass film, thereby improving the environmental resistance against humidity and the like.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、上記従
来の抵抗体では、抵抗膜にガラス膜をコーティングする
ことから抵抗値が変化し易く、特性にばらつきが生じ易
いという問題がある。また上記ガラス膜にピンホールが
生じる場合があり、この結果湿度の高い雰囲気中では水
分等が侵入して抵抗特性を悪化させるという問題もあ
る。さらに上記従来の抵抗体では、アルミナ基板，抵抗
膜，及びガラス膜の熱膨張率がそれぞれ異なることか
ら、抵抗膜の基板への密着性が低く、その結果大きな電
力容量が得られないという問題点がある。However, in the above-mentioned conventional resistor, since the resistance film is coated with the glass film, there is a problem that the resistance value is likely to change and the characteristics are likely to vary. In addition, pinholes may be formed in the glass film, and as a result, there is a problem that moisture or the like enters in a high humidity atmosphere to deteriorate the resistance characteristics. Further, in the above conventional resistor, since the alumina substrate, the resistance film, and the glass film have different coefficients of thermal expansion, the adhesion of the resistance film to the substrate is low, and as a result, a large power capacity cannot be obtained. There is.
【０００４】本発明は、上記従来の状況に鑑みてなされ
たもので、抵抗特性のばらつきを回避でき、かつ湿度に
対する耐環境性を向上できるとともに、大きな電力容量
が得られる抵抗体を提供することを目的としている。The present invention has been made in view of the above conventional circumstances, and provides a resistor capable of avoiding variations in resistance characteristics, improving environmental resistance to humidity, and obtaining a large power capacity. It is an object.
【０００５】[0005]
【課題を解決するための手段】そこで本発明は、セラミ
クス焼結体の内部に少なくとも１つの抵抗膜を埋設して
なり、かつ上記焼結体が、ＺｎＯを主成分とし、これに
Ｂｉ，Ｓｂ，Ｃｏ，ＭｎをそれぞれＢｉ2 Ｏ3 ，Ｓｂ2
Ｏ3 ，ＣｏＯ，ＭｎＯの酸化物に換算して0.1〜10mol
％,0.05 〜５mol ％，０〜５mol ％，０〜３mol ％含有
していることを特徴とする抵抗体である。Therefore, according to the present invention, at least one resistance film is embedded inside a ceramics sintered body, and the sintered body contains ZnO as a main component. , Co and Mn are replaced with Bi 2 O 3 and Sb 2 respectively.
0.1-10 mol in terms of O 3 , CoO, MnO oxide
%, 0.05 to 5 mol%, 0 to 5 mol%, and 0 to 3 mol%.
【０００６】ここで、上記各副成分の添加量を限定した
理由について説明する。Ｂｉを上記範囲内で添加すると
電力容量は向上するが、単独では焼結体との反応や焼結
体の絶縁性が不充分となって抵抗値の直線性が悪化す
る。一方、上記ＢｉとともにＳｂを添加すると、Ｂｉ量
が少なくても焼結が進み、かつ焼結体の粒子の成長を抑
制して絶縁性を向上させることから、抵抗値の直線性が
向上する。しかし上記Ｓｂ量が0.05mol ％未満では焼結
せず、また５mol ％を越えると抵抗膜との反応によって
抵抗値が上昇し、特性のばらつきが大きくなり易い。Here, the reason for limiting the addition amount of each of the above subcomponents will be described. If Bi is added within the above range, the power capacity is improved, but if it alone is used, the reaction with the sintered body and the insulation of the sintered body become insufficient, and the linearity of the resistance value deteriorates. On the other hand, when Sb is added together with Bi, the sintering proceeds even if the Bi content is small, and the growth of the particles of the sintered body is suppressed to improve the insulating property, so that the linearity of the resistance value is improved. However, if the Sb content is less than 0.05 mol%, sintering does not occur, and if it exceeds 5 mol%, the resistance value increases due to the reaction with the resistance film, and variations in characteristics tend to increase.
【０００７】Ｃｏ，Ｍｎは、抵抗膜とは反応しないこと
から抵抗値を上昇させることはなく、必ずしも添加する
必要はないが、抵抗の直線性を向上させるためには添加
するのが望ましい。しかし上記Ｃｏ，Ｍｎの添加量がそ
れぞれ５mol ％，３mol ％を越えると抵抗膜と反応し易
くなり、抵抗の直線性を悪化させたり，抵抗値を上昇さ
せたりする。Since Co and Mn do not react with the resistance film and thus do not increase the resistance value, it is not always necessary to add them, but it is desirable to add them in order to improve the linearity of the resistance. However, when the amounts of Co and Mn added exceed 5 mol% and 3 mol%, respectively, they easily react with the resistance film, which deteriorates the linearity of the resistance and increases the resistance value.
【０００８】また、上記抵抗体を形成するには、複数の
セラミクスシートをこれの間に上記抵抗膜を介在させて
積層し、該積層体を抵抗膜とともに一体焼結し、これに
より焼結体を形成することとなる。In order to form the resistor, a plurality of ceramic sheets are laminated with the resistive film interposed therebetween, and the laminated body is integrally sintered with the resistive film, whereby a sintered body is obtained. Will be formed.
【０００９】[0009]
【作用】本発明に係る抵抗体によれば、焼結体の内部に
抵抗膜を埋設し、該抵抗膜の周囲をセラミクスで覆った
ので、従来のガラスコーティングを不要にでき、それだ
け抵抗値の変化による特性のばらつきを回避できる。ま
たピンホールの問題も解消できることから、湿度等に対
する耐環境性を改善でき、この点からも抵抗特性の悪化
を回避できる。さらに、ＺｎＯを主成分とし、これにＢ
ｉ，Ｓｂ，Ｃｏ，Ｍｎの酸化物を所定量添加したので、
これにより抵抗膜と焼結体との密着性を向上でき、しか
も抵抗膜の周囲は同一の焼結体で囲まれることから、放
熱性を向上でき、かつ熱膨張率の差による歪も少なくで
き、それだけ大きな電力容量を得ることができるととも
に、抵抗値の直線性を向上できる。According to the resistor of the present invention, since the resistance film is embedded inside the sintered body and the periphery of the resistance film is covered with ceramics, the conventional glass coating can be dispensed with, and the resistance value can be reduced accordingly. It is possible to avoid variations in characteristics due to changes. Further, since the problem of pinholes can be solved, environment resistance to humidity and the like can be improved, and also from this point, deterioration of resistance characteristics can be avoided. Furthermore, ZnO is the main component, and B
Since a predetermined amount of oxides of i, Sb, Co, and Mn was added,
As a result, the adhesiveness between the resistance film and the sintered body can be improved, and since the periphery of the resistance film is surrounded by the same sintered body, heat dissipation can be improved and distortion due to the difference in the coefficient of thermal expansion can be reduced. As a result, a larger power capacity can be obtained and the linearity of the resistance value can be improved.
【００１０】[0010]
【実施例】以下、本発明の実施例を図について説明す
る。図１及び図２は本発明の一実施例による抵抗体を説
明するための図である。図において、１は本実施例の抵
抗体である。この抵抗体１は略直方体状のセラミクス焼
結体３からなり、この焼結体３の内部にはＲｕ酸化物，
又はその化合物からなる抵抗膜４が埋設されている。こ
の抵抗膜４の左, 右端面４ａ，４ｂは上記焼結体３の
左, 右側面３ａ，３ｂに露出しており、残りの他の端面
は焼結体３内に封入されている。また、上記焼結体３の
左, 右側面３ａ，３ｂにはＡｇ−Ｐｄからなる外部電極
５が被覆形成されており、該外部電極５は上記抵抗膜４
の各端面４ａ，４ｂに接続されている。Embodiments of the present invention will be described below with reference to the drawings. 1 and 2 are views for explaining a resistor according to an embodiment of the present invention. In the figure, 1 is a resistor of this embodiment. The resistor 1 is made of a substantially rectangular parallelepiped ceramics sintered body 3. Inside the sintered body 3, Ru oxide,
Alternatively, the resistance film 4 made of the compound is buried. The left and right end surfaces 4a and 4b of the resistance film 4 are exposed on the left and right side surfaces 3a and 3b of the sintered body 3, and the other remaining end surfaces are enclosed in the sintered body 3. Further, the left and right side surfaces 3a, 3b of the sintered body 3 are coated with an external electrode 5 made of Ag-Pd, and the external electrode 5 is formed by the resistive film 4 described above.
Are connected to the respective end faces 4a and 4b.
【００１１】また、上記焼結体３は、複数のセラミクス
シート２を積層して構成されており、これは１枚のセラ
ミクスシート２の上面に上記抵抗膜４をパターン形成
し、この抵抗膜４が形成されたセラミクスシート２に残
りのセラミクスシート２をサンドイッチ状に重ね合わせ
て積層体を形成し、該積層体を一体焼結して形成された
ものである。The sintered body 3 is formed by laminating a plurality of ceramic sheets 2, which is formed by patterning the resistance film 4 on the upper surface of one ceramic sheet 2. It is formed by stacking the remaining ceramic sheets 2 on the formed ceramic sheet 2 in a sandwich form to form a laminated body, and integrally sintering the laminated body.
【００１２】そして、上記焼結体３を構成する各セラミ
ックシート２は、ＺｎＯを主成分とし、これに副成分と
してＢｉ，Ｓｂ，Ｃｏ，Ｍｎを添加してなるセラミック
材料により構成されている。また、上記各副成分の添加
量はＢｉ2 Ｏ3 ，Ｓｂ2 Ｏ3，ＣｏＯ，ＭｎＯの酸化物
に換算してそれぞれ0.1 〜10mol ％,0.05 〜５mol ％，
０〜５mol ％，０〜３mol ％の範囲内となっている。Each of the ceramic sheets 2 constituting the sintered body 3 is made of a ceramic material containing ZnO as a main component and Bi, Sb, Co and Mn as auxiliary components. In addition, the amounts of the above sub-components added are 0.1 to 10 mol%, 0.05 to 5 mol%, calculated as oxides of Bi 2 O 3 , Sb 2 O 3 , CoO and MnO, respectively.
It is in the range of 0 to 5 mol% and 0 to 3 mol%.
【００１３】次に本実施例の作用効果について説明す
る。本実施例の抵抗体１によれば、焼結体３内に抵抗膜
４を埋設したので、この抵抗膜４の周囲はセラミクスで
覆われていることから、従来のガラスコーティングを不
要にでき、それだけ抵抗値の変化による特性のばらつき
を回避できる。またピンホールの問題も解消できること
から、湿度等に対する耐環境性を改善でき、抵抗特性の
悪化を回避できる。Next, the function and effect of this embodiment will be described. According to the resistor 1 of this embodiment, since the resistance film 4 is embedded in the sintered body 3, since the periphery of the resistance film 4 is covered with ceramics, the conventional glass coating can be dispensed with. It is possible to avoid variations in characteristics due to changes in resistance value. Further, since the problem of pinholes can be solved, environment resistance to humidity and the like can be improved, and deterioration of resistance characteristics can be avoided.
【００１４】また、上記焼結体３に、ＺｎＯを主成分と
し、これに副成分としてＢｉ，Ｓｂ，Ｃｏ，Ｍｎの酸化
物を添加してなるセラミクス材料を採用したので、焼結
温度を低温化でき、これにより得られた抵抗膜４は焼結
体３との密着性が良く、しかも抵抗膜４の周囲は上記セ
ラミクス材料で囲まれていることから、放熱性を向上で
き、かつ熱膨張率の差による歪も少なくでき、それだけ
電力容量を向上できる。ちなみに、従来の抵抗素子では
100mW 程度であったのに対して、本実施例の抵抗体１で
は、従来素子の体積に比較して小型化を図りながら10倍
以上の電力容量が得られる。さらにまた上記各副成分を
添加したことにより抵抗値の直線性を向上できる。Further, since a ceramic material containing ZnO as a main component and Bi, Sb, Co, Mn oxides as auxiliary components is added to the sintered body 3, the sintering temperature is low. The resistance film 4 thus obtained has good adhesion to the sintered body 3, and since the periphery of the resistance film 4 is surrounded by the ceramic material, heat dissipation can be improved and thermal expansion can be achieved. Distortion due to the difference in the rate can be reduced, and the power capacity can be improved accordingly. By the way, in the conventional resistance element
In contrast to the power consumption of about 100 mW, the resistor 1 of the present embodiment can obtain a power capacity 10 times or more as compared with the volume of the conventional element while achieving downsizing. Furthermore, the linearity of the resistance value can be improved by adding each of the above subcomponents.
【００１５】さらに、本実施例では、従来のガラスペー
ストを塗布した後、焼き付ける工程を不要にできること
から、その分だけ製造コストを低減できる。さらにまた
抵抗膜の積層化が可能となることから、同一パターン，
同一工程で抵抗値の異なる各種の抵抗膜を自由に設定で
きる。Furthermore, in the present embodiment, since the step of baking after applying the conventional glass paste can be eliminated, the manufacturing cost can be reduced accordingly. Furthermore, since the resistance films can be laminated, the same pattern,
Various resistance films having different resistance values can be freely set in the same process.
【００１６】次に本実施例の抵抗体１の一製造方法につ
いて説明する。まず、ＺｎＯを主成分とし、これにＢ
ｉ，Ｓｂ，Ｃｏ，ＭｎをＢｉ2 Ｏ3 ，Ｓｂ2 Ｏ3 ，Ｃｏ
Ｏ，ＭｎＯ酸化物に換算してそれぞれ0.1 〜10mol ％,
0.05 〜５mol ％，０〜５mol ％，０〜３mol ％となる
よう配合してセラミクス粉末を形成する。この粉末に純
水を加えてボールミルで粉砕混合してスラリーを形成す
る。Next, a method of manufacturing the resistor 1 of this embodiment will be described. First, ZnO is the main component and B
i, Sb, Co and Mn are replaced with Bi 2 O 3 , Sb 2 O 3 and Co.
0.1 to 10 mol% in terms of O and MnO oxides,
A ceramic powder is formed by blending so as to be 0.05 to 5 mol%, 0 to 5 mol%, and 0 to 3 mol%. Pure water is added to this powder and pulverized and mixed by a ball mill to form a slurry.
【００１７】次に、上記スラリーを蒸発乾燥させて、75
0 ℃で２時間仮焼成する。この仮焼成物を粗粉砕し、こ
れに純水を加えてボールミルで微粉砕してセラミクス原
料を形成する。次いで、この原料に、エチルアルコール
及びトルエンを６：４の割合で混合した溶媒を加えてボ
ールミルで混合してスラリーを形成する。Next, the slurry is evaporated to dryness and
Calcination is performed at 0 ° C. for 2 hours. The calcined product is roughly crushed, pure water is added to the calcinated product, and finely crushed with a ball mill to form a ceramic raw material. Next, a solvent in which ethyl alcohol and toluene are mixed at a ratio of 6: 4 is added to this raw material and mixed by a ball mill to form a slurry.
【００１８】上記スラリーをドクタブレード法により、
厚さ70μm のグリーンシートを形成し、このグリーシー
トを乾燥させた後、所定の大きさにカットして矩形状の
セラミクスシート２を多数枚形成する。The above slurry was prepared by the doctor blade method.
A green sheet having a thickness of 70 μm is formed, the green sheet is dried, and then cut into a predetermined size to form a large number of rectangular ceramic sheets 2.
【００１９】次に、ＲｕＯ2 ：Ｒｕ2 Ｐｂ2 Ｏ7 ：Ｒｕ
2 Ｂｉ2 Ｏ7 ＝６：２：２mol 比で配合してなる組成物
に、ビヒクルを加えて抵抗ペーストを形成する。この抵
抗ペーストを上記１枚のセラミクスシート２の上面に印
刷して抵抗膜４を形成する。この場合、上記抵抗膜４の
左, 右端面４ａ，４ｂがセラミックシート２の左, 右外
縁に位置し、残り他の端面はシート２の内側に位置する
よう形成する。Next, RuO 2 : Ru 2 Pb 2 O 7 : Ru
A vehicle is added to a composition prepared by blending 2 Bi 2 O 7 = 6: 2: 2 mol to form a resistance paste. The resistance paste is printed on the upper surface of the ceramic sheet 2 to form the resistance film 4. In this case, the left and right end surfaces 4a and 4b of the resistance film 4 are located on the left and right outer edges of the ceramic sheet 2, and the remaining other end surfaces are located inside the sheet 2.
【００２０】次いで、上記抵抗膜４が形成されたセラミ
クスシート２の上面，及び下面に複数枚のセラミクスシ
ート２を重ね合わせて積層し、これに２t/cm2 の圧力を
加えて圧着し、これにより積層体を形成する。次に、こ
の積層体を所定の大きさにカットし、これを400 ℃に加
熱してバインダーを飛散させた後、930 ℃に昇温加熱し
て３時間焼成して焼結体３を形成する。Next, a plurality of ceramic sheets 2 are superposed and laminated on the upper surface and the lower surface of the ceramic sheet 2 on which the resistance film 4 is formed, and a pressure of 2 t / cm 2 is applied to the ceramic sheet 2 for pressure bonding. To form a laminated body. Next, this laminated body is cut into a predetermined size, heated to 400 ° C. to scatter the binder, heated to 930 ° C. and heated for 3 hours to form a sintered body 3. ..
【００２１】これにより得られた焼結体３をバレル研磨
した後、これの左, 右側面３ａ，３ｂにＡｇ：Ｐｄ＝
７：３wt比からなる電極ペーストを塗布し、これを850
℃で10分間焼き付けて外部電極５を形成し、該外部電極
５と抵抗膜４の左, 右端面４ａ，４ｂとを電気的に接続
する。これにより本実施例の抵抗体１が製造される。After barrel-polishing the sintered body 3 thus obtained, Ag: Pd = on the left and right side surfaces 3a and 3b thereof.
Apply an electrode paste consisting of 7: 3 wt.
The external electrode 5 is formed by baking at 0 ° C. for 10 minutes, and the external electrode 5 and the left and right end surfaces 4a and 4b of the resistance film 4 are electrically connected. As a result, the resistor 1 of this embodiment is manufactured.
【００２２】[0022]
【表１】 [Table 1]
【００２３】次に本実施例の抵抗体１の効果を確認する
ために行った試験について説明する。この試験は、表１
に示すように、Ｂｉ2 Ｏ3 の添加量を0.1 〜30.0mol
％，Ｓｂ2 Ｏ3 ，ＣｏＯ，ＭｎＯの添加量をそれぞれ0.
03〜10.0mol ％の範囲で変化させて上記製造方法により
多数の試料No. １〜No. ５２を作成し、この各試料の抵
抗値（Ω），３ＣＶ（３σ／平均×100 ％) ，電力容量
（mW) ，及び抵抗値の直線性（α）を測定して行った。
なお、直線性はα＝１/log( Ｒ1mA / Ｒ0.1mA ）により
求めた。また、表中、＊印は本発明の請求範囲外を示
す。Next, a test carried out to confirm the effect of the resistor 1 of this embodiment will be described. This test is shown in Table 1.
As shown in Fig. 2 , the added amount of Bi 2 O 3 is 0.1 to 30.0 mol.
%, Sb 2 O 3 , CoO, and MnO are added in an amount of 0.
A large number of samples No. 1 to No. 52 were prepared by changing the range of 03 to 10.0 mol% by the above manufacturing method, and the resistance value (Ω), 3 CV (3σ / average × 100%), and power of each sample were prepared. The measurement was performed by measuring the capacity (mW) and the linearity (α) of the resistance value.
The linearity was determined by α = 1 / log (R 1mA / R 0.1mA ). Further, in the table, * marks indicate outside the scope of claims of the present invention.
【００２４】[0024]
【表２】 [Table 2]
【００２５】表２はその結果を示す。同表からも明らか
なように、Ｂｉ2 Ｏ3 のみ添加してなる各試料No. １〜
７の場合は、焼結できず抵抗体として使用できなかった
り，焼結できても抵抗値の直線性が1.51以上と悪化して
おり、単独では焼結体との反応や焼結体の絶縁性が不充
分となっている。また、Ｓｂ2 Ｏ3 の添加量が0.03mol
％未満の各試料No. ８，３５，４１，４７の場合は、セ
ラミクスの焼結が進んでおらず抵抗体として使用できな
い。一方、上記添加量が10mol ％を越える試料No. １６
の場合は、抵抗値が3.4MΩと上昇しており、しかも抵抗
がばらつき, 電力容量が低下している。さらに、ＣｏＯ
の添加量が10mol ％, 及びＭｎＯの添加量が５mol ％を
越える各試料No. ２５，３３，３４の場合は、抵抗値が
上昇したり，直線性が悪化している。Table 2 shows the results. As is clear from the table, each sample No. 1 to 1 containing only Bi 2 O 3 was added.
In the case of No. 7, it cannot be sintered and cannot be used as a resistor, or even if it can be sintered, the linearity of the resistance value is deteriorated to 1.51 or more. By itself, the reaction with the sintered body and the insulation of the sintered body The sex is insufficient. Moreover, the addition amount of Sb 2 O 3 is 0.03 mol.
In the case of each sample No. 8, 35, 41, 47 of less than%, it cannot be used as a resistor because sintering of ceramics has not progressed. On the other hand, Sample No. 16 with the above addition amount exceeding 10 mol%
In the case of, the resistance value increased to 3.4 MΩ, the resistance varied, and the power capacity decreased. Furthermore, CoO
In the case of each of the sample Nos. 25, 33 and 34 in which the addition amount of 10 mol% and the addition amount of MnO exceed 5 mol%, the resistance value is increased and the linearity is deteriorated.
【００２６】これに対して、添加量が本発明範囲内の各
試料No. ９〜１５，１７〜２４，２６〜３２，３６〜４
０，４２〜４６，４８〜５２の場合は、抵抗値が0.41K
〜11.3K Ωと低く、ばらつきが10〜32％と小さくなって
いる。しかも電力容量は760〜1860mWと大幅に向上して
おり、抵抗値の直線性は1.00〜1.35とこの点においても
向上していることがわかる。On the other hand, each sample No. 9 to 15, 17 to 24, 26 to 32, 36 to 4 whose addition amount is within the range of the present invention.
In the case of 0, 42 to 46, 48 to 52, the resistance value is 0.41K
It is as low as ~ 11.3K Ω and the variation is as small as 10 ~ 32%. Moreover, the power capacity is significantly improved to 760 to 1860 mW, and the linearity of the resistance value is 1.00 to 1.35, which is also improved in this respect.
【００２７】[0027]
【発明の効果】以上のように本発明に係る抵抗体によれ
ば、焼結体の内部に抵抗膜を埋設し、かつ焼結体に、Ｚ
ｎＯを主成分とし、これにＢｉ2 Ｏ3 ，Ｓｂ2 Ｏ3 ，Ｃ
ｏＯ，ＭｎＯの酸化物をそれぞれ0.1 〜10mol ％,0.05
〜５mol ％，０〜５mol ％，０〜３mol ％含有してなる
セラミクス材料を採用したので、抵抗値の変化による特
性のばらつきを回避でき、かつ湿度等に対する耐環境性
を向上できる効果があるとともに、電力容量，及び抵抗
値の直線性を向上できる効果がある。As described above, according to the resistor of the present invention, the resistance film is embedded inside the sintered body, and Z
nO is the main component, and Bi 2 O 3 , Sb 2 O 3 , C
Oo and MnO oxides are 0.1-10 mol% and 0.05, respectively.
Since the ceramic material containing ~ 5mol%, 0-5mol%, 0-3mol% is adopted, it is possible to avoid the characteristic variation due to the change of the resistance value and to improve the environmental resistance against humidity and the like. In addition, the linearity of the power capacity and the resistance value can be improved.
【図１】本発明の一実施例による抵抗体を説明するため
の断面図である。FIG. 1 is a cross-sectional view illustrating a resistor according to an exemplary embodiment of the present invention.
【図２】上記実施例の抵抗体の製造方法を示す分解斜視
図である。FIG. 2 is an exploded perspective view showing the method of manufacturing the resistor according to the above embodiment.
１ 抵抗体 ３ 焼結体 ４ 抵抗膜 1 Resistor 3 Sintered body 4 Resistive film
───────────────────────────────────────────────────── フロントページの続き (72)発明者 谷 広次 京都府長岡京市天神２丁目26番10号 株式 会社村田製作所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Hirotsugu Tani 2-26-10 Tenjin Tenjin, Nagaokakyo, Kyoto Inside Murata Manufacturing Co., Ltd.
Claims (1)
つの抵抗膜を埋設してなり、かつ上記焼結体が、ＺｎＯ
を主成分とし、これにＢｉ，Ｓｂ，Ｃｏ，Ｍｎをそれぞ
れＢｉ2 Ｏ3 ，Ｓｂ2 Ｏ3 ，ＣｏＯ，ＭｎＯの酸化物に
換算して0.1〜10mol ％,0.05 〜５mol ％，０〜５mol
％，０〜３mol ％含有していることを特徴とする抵抗
体。1. At least one inside the ceramic sintered body.
Two resistance films are embedded, and the sintered body is ZnO.
Is used as the main component, and Bi, Sb, Co, and Mn are converted into oxides of Bi 2 O 3 , Sb 2 O 3 , CoO, and MnO, respectively, and are 0.1 to 10 mol%, 0.05 to 5 mol%, 0 to 5 mol.
%, 0 to 3 mol% resistor.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10043092A JP3245946B2 (en) | 1992-03-25 | 1992-03-25 | Resistor |
| US08/014,362 US5355112A (en) | 1992-02-07 | 1993-02-05 | Fixed resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10043092A JP3245946B2 (en) | 1992-03-25 | 1992-03-25 | Resistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05275214A true JPH05275214A (en) | 1993-10-22 |
| JP3245946B2 JP3245946B2 (en) | 2002-01-15 |
Family
ID=14273743
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10043092A Expired - Fee Related JP3245946B2 (en) | 1992-02-07 | 1992-03-25 | Resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3245946B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012124204A (en) * | 2010-12-06 | 2012-06-28 | Tdk Corp | Chip varistor |
| JP2012124209A (en) * | 2010-12-06 | 2012-06-28 | Tdk Corp | Chip varistor |
-
1992
- 1992-03-25 JP JP10043092A patent/JP3245946B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012124204A (en) * | 2010-12-06 | 2012-06-28 | Tdk Corp | Chip varistor |
| JP2012124209A (en) * | 2010-12-06 | 2012-06-28 | Tdk Corp | Chip varistor |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3245946B2 (en) | 2002-01-15 |
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