JPH0527489Y2 - - Google Patents
Info
- Publication number
- JPH0527489Y2 JPH0527489Y2 JP14787687U JP14787687U JPH0527489Y2 JP H0527489 Y2 JPH0527489 Y2 JP H0527489Y2 JP 14787687 U JP14787687 U JP 14787687U JP 14787687 U JP14787687 U JP 14787687U JP H0527489 Y2 JPH0527489 Y2 JP H0527489Y2
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- substrate
- evaporation source
- beam evaporation
- evaporation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 33
- 238000005566 electron beam evaporation Methods 0.000 claims description 24
- 238000007738 vacuum evaporation Methods 0.000 claims description 6
- 238000007740 vapor deposition Methods 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 description 14
- 230000008020 evaporation Effects 0.000 description 14
- 239000010408 film Substances 0.000 description 12
- 238000010894 electron beam technology Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 5
- 238000012544 monitoring process Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Description
【考案の詳細な説明】
技術分野
本考案は、電子ビームスライド方式を採用した
真空蒸着装置に関する。[Detailed Description of the Invention] Technical Field The present invention relates to a vacuum evaporation apparatus employing an electron beam sliding method.
従来技術
通常、真空蒸着においては、蒸着槽の下部に蒸
発源を配置し、上部(天井部)に基板を置いて蒸
着をしている。しかしこの方式では、有効に利用
できる面積が狭いため、1回の蒸着で処理できる
基板量や基板の大きさに限界がある。真空槽内の
側壁部に基板を立てて配置すれば、真空槽内の面
積を有効に利用することができる。実際にスパツ
タ装置では、高さ方向に亘る長尺のターゲツトを
用い、基板を円筒状ホルダーに支持、回転させて
薄膜を形成しており、サイドスパツタ方式と呼ば
れている。Prior Art Usually, in vacuum evaporation, an evaporation source is placed at the bottom of a evaporation tank, and a substrate is placed at the top (ceiling) for evaporation. However, in this method, since the area that can be effectively used is small, there are limits to the amount and size of substrates that can be processed in one vapor deposition. By arranging the substrate upright on the side wall of the vacuum chamber, the area within the vacuum chamber can be effectively utilized. In actual sputtering equipment, a thin film is formed by using a long target extending in the height direction and supporting and rotating the substrate in a cylindrical holder, which is called a side sputtering method.
しかし真空蒸着装置では、蒸発源の大きさが制
限され、基本的には点源となるため、真空槽の側
壁に立てた基板に対して、均一な膜厚で薄膜を蒸
着することが困難であつた。特に、抵抗加熱方式
の場合には長尺のボートを使用するなど多少の工
夫も考えられるが、電子ビーム蒸発源の場合には
そのような工夫も困難である。 However, in vacuum evaporation equipment, the size of the evaporation source is limited and is basically a point source, making it difficult to evaporate a thin film with a uniform thickness onto a substrate placed on the side wall of the vacuum chamber. It was hot. In particular, in the case of a resistance heating method, some measures such as using a long boat can be considered, but such measures are difficult in the case of an electron beam evaporation source.
一方、光学膜(酸化物、誘電物質)の作成の場
合のように、蒸着物質の融点や要求される膜特性
によつては、電子ビーム蒸着を必要とする場合も
ある。 On the other hand, as in the case of creating optical films (oxides, dielectric materials), electron beam evaporation may be required depending on the melting point of the deposited material and the required film properties.
考案の目的
本考案は、蒸着槽内の空間を有効に利用して生
産性に優れ、しかも均一な膜厚で電子ビーム蒸着
ができる蒸着装置を提供するものである。Purpose of the invention The present invention provides an evaporation apparatus that effectively utilizes the space within the evaporation tank, has excellent productivity, and can perform electron beam evaporation with a uniform film thickness.
考案の構成
本考案の電子ビームスライド方式を採用した真
空蒸着装置は、電子ビーム蒸発源と、基板を立て
た状態で支持する基板ホルダーとを具え、該電子
ビーム蒸発源が前記基板の高さ方向に沿つて移動
しながら蒸着することを特徴とする。Composition of the Invention A vacuum evaporation apparatus employing the electron beam sliding method of the present invention includes an electron beam evaporation source and a substrate holder that supports a substrate in an upright state, and the electron beam evaporation source is arranged in the height direction of the substrate. The feature is that the vapor deposition is performed while moving along the
以下、添付図面に沿つて本考案をさらに詳細に
説明する。 Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings.
第1図および第2図は、本考案の真空蒸着装置
を示す説明図である。蒸着槽11内には、円筒状
の基板ホルダー15が配置され、この基板ホルダ
ー15は架台13上で円筒の仮想軸を中心として
回転する。基板ホルダー15には基板17が支持
されている。 FIG. 1 and FIG. 2 are explanatory diagrams showing a vacuum evaporation apparatus of the present invention. A cylindrical substrate holder 15 is arranged inside the vapor deposition tank 11, and this substrate holder 15 rotates on a pedestal 13 around an imaginary axis of the cylinder. A substrate 17 is supported by the substrate holder 15 .
円筒状の基板ホルダー15の内側には電子ビー
ム蒸発源21が設けられている。電子ビーム蒸発
源21は駆動軸23により上下方向に移動するこ
とができ、第1図の電子ビーム蒸発源21が最下
位置に来たとき、第2図は最上位置に来たときを
示す。 An electron beam evaporation source 21 is provided inside the cylindrical substrate holder 15 . The electron beam evaporation source 21 can be moved vertically by a drive shaft 23, and FIG. 1 shows the electron beam evaporation source 21 at the lowest position, and FIG. 2 shows the electron beam evaporation source 21 at the highest position.
いま第1図の場合を考えると、電子ビーム蒸発
源21は理想的には点源であるので、ランバート
の余弦則に従い、電子ビーム蒸発源21との距離
に応じて基板に膜厚分布が生じてしまう。具体的
には、下方位置の基板17aの方が上方位置の基
板17nよりも多くの蒸発物質が堆積し、膜厚が
厚くなる。そこで、第2図に示した上方位置まで
電子ビーム蒸発源21を移動させながら蒸着を行
ない、必要によりこの上下動を繰り返して所望の
膜厚の均一な蒸着膜を得る。 Now considering the case of FIG. 1, since the electron beam evaporation source 21 is ideally a point source, a film thickness distribution will occur on the substrate depending on the distance from the electron beam evaporation source 21 according to Lambert's law of cosines. It ends up. Specifically, more evaporated material is deposited on the lower substrate 17a than on the upper substrate 17n, resulting in a thicker film. Therefore, evaporation is performed while moving the electron beam evaporation source 21 to the upper position shown in FIG. 2, and this vertical movement is repeated as necessary to obtain a uniform evaporated film with a desired thickness.
電子ビーム蒸発源21が上方へ移動するにつれ
て、膜が最も多く堆積する部分は、17a,17
b,……17nのように基板上方へ移動する。ま
た、基板の上方部位17nでは電子ビーム蒸発源
21の移動行程のすべてで膜が堆積するのに対
し、基板の下方部位17aでは電子ビーム蒸発源
21がそれより上方へ移動すると、もはや膜が堆
積しない。そこで電子ビームのスライド蒸着を移
動行程を通して均一に行なつたのでは、基板の上
下間に亘り均一な膜厚が得られない。これは、電
子ビーム蒸発源21の上方位置での移動速度を速
めたり、電子ビーム出力(パワー)を下げたりす
ることにより調整でき、前者の方がより好適であ
る。 As the electron beam evaporation source 21 moves upward, the portions where the most film is deposited are 17a, 17.
b, . . . 17n, it moves above the substrate. In addition, in the upper part 17n of the substrate, a film is deposited during the entire movement of the electron beam evaporation source 21, whereas in the lower part 17a of the substrate, when the electron beam evaporation source 21 moves upwards, no film is deposited. do not. Therefore, if the electron beam slide evaporation is performed uniformly throughout the moving process, a uniform film thickness cannot be obtained between the top and bottom of the substrate. This can be adjusted by increasing the moving speed at the upper position of the electron beam evaporation source 21 or lowering the electron beam output (power), and the former is more preferable.
以上のように、電子ビームスライド蒸着を行な
うことにより、基板の上下方向での膜厚の均一性
を得ることができる。基板の水平方向での膜厚の
均一性は、円筒状の基板ホルダー15を回転する
ことにより実現できる。 As described above, by performing electron beam slide deposition, uniformity in film thickness can be obtained in the vertical direction of the substrate. Uniformity of the film thickness in the horizontal direction of the substrate can be achieved by rotating the cylindrical substrate holder 15.
25は蒸発量監視素子を示し、具体的には水晶
振動子が用いられる。蒸発量監視素子25は、電
子ビーム蒸発源21と位置関係を保つて一緒に移
動し、電子ビーム蒸発源21の高さ位置に応じて
予め設定された蒸発量から変動したときは、これ
を検知してフイードバツク制御を行なう。この制
御は、電子ビーム蒸発源21の移動速度または電
子ビーム出力を調整することにより行なわれる
が、追従性の点で後者の方が望ましい。 Reference numeral 25 denotes an evaporation amount monitoring element, specifically a crystal oscillator is used. The evaporation amount monitoring element 25 moves together with the electron beam evaporation source 21 while maintaining a positional relationship, and detects when the evaporation amount changes from a preset value depending on the height position of the electron beam evaporation source 21. to perform feedback control. This control is performed by adjusting the moving speed of the electron beam evaporation source 21 or the electron beam output, but the latter is preferable in terms of followability.
考案の効果
本考案によれば、基板を立てた状態で支持し、
この基板の上下方向に沿つて電子ビーム蒸発源を
移動しながら蒸着することにより、蒸着槽内の空
間を有効に利用し、大量の基板あるいは大面積の
基板に対して、均一な膜厚分布で電子ビーム蒸着
を行なうことができる。Effects of the invention According to the invention, the board is supported in an upright state,
By performing evaporation while moving the electron beam evaporation source along the vertical direction of the substrate, the space in the evaporation tank can be used effectively and a uniform film thickness distribution can be achieved on a large number of substrates or large area substrates. Electron beam evaporation can be performed.
第1図および第2図は、本考案の電子ビームス
ライド蒸着を示す説明図である。
11……蒸着槽、13……架台、15……基板
ホルダー、17……基板、17a……基板下方部
位、17n……基板上方部位、21……電子ビー
ム蒸発源、23……駆動軸、25……蒸発量監視
素子。
FIGS. 1 and 2 are explanatory diagrams showing the electron beam slide deposition of the present invention. 11... Vapor deposition tank, 13... Frame, 15... Substrate holder, 17... Substrate, 17a... Substrate lower part, 17n... Substrate upper part, 21... Electron beam evaporation source, 23... Drive shaft, 25... Evaporation amount monitoring element.
Claims (1)
する基板ホルダーとを具え、該電子ビーム蒸発源
が前記基板の高さ方向に沿つて移動しながら蒸着
することを特徴とする真空蒸着装置。 A vacuum evaporation apparatus comprising an electron beam evaporation source and a substrate holder that supports a substrate in an upright state, the electron beam evaporation source performing vapor deposition while moving along the height direction of the substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14787687U JPH0527489Y2 (en) | 1987-09-28 | 1987-09-28 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14787687U JPH0527489Y2 (en) | 1987-09-28 | 1987-09-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6453750U JPS6453750U (en) | 1989-04-03 |
JPH0527489Y2 true JPH0527489Y2 (en) | 1993-07-13 |
Family
ID=31418687
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14787687U Expired - Lifetime JPH0527489Y2 (en) | 1987-09-28 | 1987-09-28 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0527489Y2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014005478A (en) * | 2010-10-08 | 2014-01-16 | Kaneka Corp | Vapor deposition apparatus |
-
1987
- 1987-09-28 JP JP14787687U patent/JPH0527489Y2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPS6453750U (en) | 1989-04-03 |
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