JPH0527270B2 - - Google Patents
Info
- Publication number
- JPH0527270B2 JPH0527270B2 JP58164903A JP16490383A JPH0527270B2 JP H0527270 B2 JPH0527270 B2 JP H0527270B2 JP 58164903 A JP58164903 A JP 58164903A JP 16490383 A JP16490383 A JP 16490383A JP H0527270 B2 JPH0527270 B2 JP H0527270B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- insulating layer
- electrically insulating
- detector array
- array
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 38
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 claims description 31
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 claims description 25
- 229910052710 silicon Inorganic materials 0.000 claims description 25
- 239000010703 silicon Substances 0.000 claims description 25
- 239000003822 epoxy resin Substances 0.000 claims 1
- 238000009413 insulation Methods 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 229920000647 polyepoxide Polymers 0.000 claims 1
- 238000003384 imaging method Methods 0.000 description 27
- 239000010410 layer Substances 0.000 description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 24
- 239000004593 Epoxy Substances 0.000 description 18
- 229910052984 zinc sulfide Inorganic materials 0.000 description 10
- 239000005083 Zinc sulfide Substances 0.000 description 9
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052738 indium Inorganic materials 0.000 description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 3
- 238000003491 array Methods 0.000 description 3
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 3
- 229910052794 bromium Inorganic materials 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000000992 sputter etching Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- MODGUXHMLLXODK-UHFFFAOYSA-N [Br].CO Chemical compound [Br].CO MODGUXHMLLXODK-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-NJFSPNSNSA-N silicon-30 atom Chemical compound [30Si] XUIMIQQOPSSXEZ-NJFSPNSNSA-N 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US41639682A | 1982-09-08 | 1982-09-08 | |
| US416396 | 1982-09-08 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5965474A JPS5965474A (ja) | 1984-04-13 |
| JPH0527270B2 true JPH0527270B2 (ko) | 1993-04-20 |
Family
ID=23649806
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58164903A Granted JPS5965474A (ja) | 1982-09-08 | 1983-09-07 | 集積された検出器アレイと信号処理器 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5965474A (ko) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61289661A (ja) * | 1985-06-18 | 1986-12-19 | Mitsubishi Electric Corp | イメ−ジセンサ駆動用集積回路 |
| DE3544182A1 (de) * | 1985-12-13 | 1987-06-19 | Heimann Gmbh | Kontaktbildsensorzeile |
| JPS631062A (ja) * | 1986-06-20 | 1988-01-06 | Nec Corp | 並列光信号処理半導体素子 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5430787A (en) * | 1977-08-12 | 1979-03-07 | Fujitsu Ltd | Infrared-ray detector |
| JPS5715455A (en) * | 1980-07-01 | 1982-01-26 | Fujitsu Ltd | Semiconductor device |
| JPS5727054A (en) * | 1980-06-19 | 1982-02-13 | Rockwell International Corp | Selective access array circuit |
| JPS57171226A (en) * | 1981-03-27 | 1982-10-21 | Philips Nv | Infrared ray camera and manufacture thereof |
-
1983
- 1983-09-07 JP JP58164903A patent/JPS5965474A/ja active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5430787A (en) * | 1977-08-12 | 1979-03-07 | Fujitsu Ltd | Infrared-ray detector |
| JPS5727054A (en) * | 1980-06-19 | 1982-02-13 | Rockwell International Corp | Selective access array circuit |
| JPS5715455A (en) * | 1980-07-01 | 1982-01-26 | Fujitsu Ltd | Semiconductor device |
| JPS57171226A (en) * | 1981-03-27 | 1982-10-21 | Philips Nv | Infrared ray camera and manufacture thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5965474A (ja) | 1984-04-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4720738A (en) | Focal plane array structure including a signal processing system | |
| US5481133A (en) | Three-dimensional multichip package | |
| US7180149B2 (en) | Semiconductor package with through-hole | |
| US6809421B1 (en) | Multichip semiconductor device, chip therefor and method of formation thereof | |
| US7821106B2 (en) | Process for making contact with and housing integrated circuits | |
| US6607941B2 (en) | Process and structure improvements to shellcase style packaging technology | |
| EP0238089B1 (en) | Three-dimensional integrated circuit and manufacturing method therefor | |
| US5567981A (en) | Bonding pad structure having an interposed rigid layer | |
| US7556975B2 (en) | Method for manufacturing backside-illuminated optical sensor | |
| US20020093078A1 (en) | Optical device packages having improved conductor efficiency, optical coupling and thermal transfer | |
| US4761386A (en) | Method of fabricating conductive non-metallic self-passivating non-corrodable IC bonding pads | |
| JP2002305283A (ja) | ３次元マルチチップパッケージ及びその製造方法 | |
| US3965568A (en) | Process for fabrication and assembly of semiconductor devices | |
| EP0721661B1 (en) | Method of manufacturing a semiconductor device for surface mounting, and semiconductor device for surface mounting | |
| US4622576A (en) | Conductive non-metallic self-passivating non-corrodable IC bonding pads | |
| US6946734B2 (en) | Integrated passive components and package with posts | |
| JPH11150090A (ja) | 半導体装置の製造方法 | |
| JPH0527270B2 (ko) | ||
| US20220384373A1 (en) | Chip package and manufacturing method thereof | |
| JP2004273561A (ja) | 半導体装置及びその製造方法 | |
| US20130062720A1 (en) | Extended area cover plate for integrated infrared sensor | |
| CN111244071A (zh) | 半导体器件 | |
| JPH0732157B2 (ja) | 半導体装置およびその製造方法 | |
| JP2000196014A5 (ko) | ||
| JP2000196014A (ja) | 半導体チップ、及びその半導体チップが搭載された半導体装置 |