JPH05271924A - Simultaneous formation of films by sputtering on plural substrates and device therefor and system for simultaneously forming films on plural substrates - Google Patents

Abstract

PURPOSE:To efficiently and simultaneously stick sputtered particles to plural substrates at a uniform film thickness. CONSTITUTION:Magnetic lines of force are repulsed by each other and are formed as flattened magnetic lines of force if the distances between the substrates 4 and targets 13 are set at 1.5 to 2/5 the diameter of the substrates 4 and currents of the same polarity are passed to coils 11a to 11c. Plasma can eventually be generated stably in the central parts of the targets 13 as well and the formation of the films by sputtering in the central parts of the targets 13 is possible. On the other hand, the films can be formed stably by sputtering even in the outer peripheral parts of the targets 13 if the currents of the same polarity are passed to the coils 11a, 11b and the current of the reverse polarity is passed to the coil 11c.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputtering film forming method for forming a thin film on a substrate, an apparatus therefor, and a sputtering film forming system, and in particular, simultaneous film formation on a plurality of substrates and improvement of target utilization efficiency. A method for simultaneously sputtering multiple substrates and a device therefor capable of improving the deposition probability of sputtered particles on a substrate per target applied power and forming a thin film having a uniform film thickness, and further forming a laminated film. The present invention relates to a multi-substrate simultaneous sputtering film forming system including a plurality of multi-substrate simultaneous sputtering film forming apparatuses.

[0002]

2. Description of the Related Art Up to now, as a sputtering method for forming a thin film on a substrate, Shin-Film Processes (1978), pp. 131-173.
Page (THIN FILM PROCESSES (1987) pp131-1
In reality, the planar magnetron sputtering method described in 73) is mainly adopted. In the planar magnetron sputtering method, a target is interposed between a substrate and a magnetic circuit, and sputtering is performed with the magnetic circuit forming an arc-shaped magnetic field line on the target surface so that the magnetic field line forms a closed loop on the target surface. This is a method, and in the case of the planar magnetron sputtering method, a thin film can be formed on the substrate at a high speed and with a uniform film thickness. Incidentally, JP-A-60-106962 discloses a double-sided film forming technique using a planar magnetron sputtering method, and JP-A-58-3975 discloses a target use in forming a film by the planar magnetron sputtering method. Each efficiency improvement technique is shown.

[0003]

However, in the single-wafer stationary opposed planar magnetron sputtering method disclosed in Japanese Patent Laid-Open No. 60-106962, simultaneous film formation on one side of each of a plurality of substrates and improvement of target utilization efficiency are achieved. However, improvement of the probability of attachment of sputtered particles to the surface of the substrate and uniformization of the film thickness have not been considered so much.
In this sputtering method, the distance between the substrate and the target is generally half the diameter of the substrate, and the erosion on the target is formed as a donut shape having the same diameter as the diameter of the substrate. Therefore, in this sputtering method, the probability of the sputtered particles emitted from the target adhering to the substrate surface decreases as the size of the substrate increases, and is as low as about 25% for a substrate having a diameter of 150 mm, and the utilization efficiency of sputtered particles is good. Not only
There is also a lot of waste of input power, and since erosion is limited to a narrow donut-shaped area on the target,
It is impossible to improve the utilization efficiency of the target.

On the other hand, according to JP-A-58-3975, the distance between the substrate and the target is half the diameter of the substrate as a standard, and the erosion is formed as a donut shape having the same diameter as the diameter of the substrate. However, the improvement of the sticking probability of the sputtered particles emitted from the target to the substrate surface is not taken into consideration. When the magnetic circuit is controlled so that the erosion is located in the center of the target and the magnetic lines of force are formed in the central part, the arc of the magnetic lines of force extends toward the substrate side like a hairpin and the plasma becomes unstable, resulting in stable It cannot be formed by sputtering. Further, when the erosion position is swung up to the outer peripheral portion of the target, the plasma is extinguished by the inflow of electrons in the plasma to the anode, so that sputtering film formation cannot be performed. That is,
Over a wide range from the center of the target to the outer periphery,
There is no mention of how to cause erosion.

A first object of the present invention is to provide a multi-substrate simultaneous sputtering film forming method and apparatus capable of efficiently depositing sputtered particles emitted from a target onto each of a plurality of substrates. A second object of the present invention is to provide a multi-substrate simultaneous sputtering film deposition method and apparatus capable of efficiently depositing sputtered particles emitted from a target onto each of a plurality of substrates simultaneously and with a uniform film thickness. .. A third object of the present invention is to provide a multi-substrate simultaneous sputtering film formation system in which sputtered particles emitted from a target can be efficiently deposited on each of a plurality of substrates at least simultaneously and as a laminated film.

[0006]

SUMMARY OF THE INVENTION The first purpose is basically to set the diameter of each of two substrates in back-to-back relation to R
Is the distance L between the substrate and the target corresponding to the substrate.
Is R × 1/5 ≦ L ≦ R × 2/5, and the flat magnetic field lines are formed by repulsing the arc-shaped magnetic field lines on the respective target surfaces to form flattened magnetic field lines. On the other hand, it is achieved by depositing sputtered particles from the corresponding target. Further, a substrate holder for temporarily fixing two substrates back to back in the central portion of the vacuum container, and a substrate holder provided corresponding to the substrates with the diameter of each of the substrates being R, the distance L between the substrates is R × 1/5 ≦ L
At least a target satisfying ≦ R × 2/5 and a magnetic circuit provided corresponding to the target and generating arc-shaped magnetic force lines so that the magnetic force lines on the respective target surfaces are repulsed from each other and flattened magnetic force lines are formed. It is achieved by configuring to include.

The second purpose is basically to set the diameter L of each of the two back-to-back substrates to R, and the distance L between the substrates and the target corresponding to the substrates to be R × 1 /
5 ≦ L ≦ R × 2/5, and while the arc-shaped magnetic field lines on each target surface are mutually repulsed to form a flattened magnetic field line, the two erosion positions on each target surface are updated. It is achieved by depositing sputtered particles from a corresponding target on each thin film formation surface. Further, a substrate holder for temporarily fixing two substrates back to back in the central portion of the vacuum container, and a substrate holder provided corresponding to the substrates with the diameter of each of the substrates being R, the distance L between the substrates is R × 1/5 ≦ L ≦ R × 2/5
And a target provided with the target,
It is achieved by including at least an electromagnet that generates arc-shaped magnetic force lines so that the magnetic force lines on each of the target surfaces repel each other to form flattened magnetic force lines.

Further, the third purpose is that each time two substrates temporarily fixed back to back are accommodated in each of a plurality of substrate simultaneous sputtering film-forming apparatuses, a substrate on each substrate is successively accommodated. In a state where the thin film forming surface is made to face the target corresponding to the substrate, the sputtered particles from the corresponding target are attached to each of the thin film forming surfaces by a planar magnetron method,
This is achieved by forming a laminated film on the thin film formation surface.

[0009]

With the diameter of each of the two substrates temporarily fixed back-to-back in the vacuum vessel as R, the distance L between the substrate and the target corresponding to the substrate is R × 1/5 ≦ L ≦ R × Two
When the sputtering film formation is performed in the state of approaching / 5, the adhesion efficiency of the sputtered particles emitted from the target to each substrate can be improved. Further, as the magnetic circuit for generating the arc-shaped magnetic field lines, an electromagnet whose magnetic field lines are controllable (specifically, configured as a plurality of electromagnets) is used.
Corresponding to each thin film formation surface on each of the two substrates while updating the erosion position on each target surface in a state in which the arcuate magnetic force lines on each target surface are mutually repelled and flattened magnetic field lines are formed. When sputtered particles from the target are attached, a thin film can be formed on each substrate from the central portion to the outer peripheral portion with a large amount of sputtered particles attached and a uniform film thickness.

[0010]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to FIGS. First, the structure of a simultaneous sputtering film forming apparatus for a plurality of substrates according to the present invention will be described. FIG. 1 shows a partial vertical cross-sectional structure as an example thereof. In this case, two substrates 4 are temporarily fixed back-to-back in a substantially central portion inside the vacuum container 1 in which the vacuum evacuation device 2 and the gas introduction mechanism 3 can communicate (the temporary fixing method is mechanical. Even,
A substrate holder 5 for electrostatic attraction is also provided, but the substrate holder 5 is configured so as to be substantially bilaterally symmetrical with respect to this. Each of the substrates 4 is temporarily fixed to the substrate holder 5 with the thin film formation surface facing outside. When facing the substrates 4, the cathode 7 and the vacuum are disposed via the insulator 6. An anode 8 is installed on the wall surface of the container 1. Further, the cathode 7 is provided with an electromagnet group 10 including a yoke 9, coils 11a to 11c, and coil power supplies 12a to 12c, and a target 13 is also provided on the substrate 9 side of the yoke 9 and the coils 11a to 11c. The backing plate 14 provided is installed. Further, the cathode 7 is connected to a sputtering power source 15, and the substrate holder 15 is connected to a bias sputtering power source 16. Incidentally, the target 13 may be attached to the backing plate 14 by bonding with a commonly used metal or fixing by mechanical fastening. In this case, indium (In) or the like may be interposed between the backing plate 14 and the target 13. When a soft metal is inserted, the target 13 itself can be cooled efficiently.

Now, the operation of the multi-substrate simultaneous sputtering film forming apparatus having the above-mentioned structure will be described below. That is, first, the inside of the vacuum container 1 is evacuated by the vacuum exhaust device 2 to a predetermined pressure, and then an inert gas (generally Ar gas) is introduced into the vacuum container 1 by the gas introduction mechanism 3 to a predetermined pressure (generally). 10 ^-2 to 1P
(a pressure). In such a state, the coil power supply 12a is provided to each of the coils 11a to 11c.
Current is applied to the target 13 to generate arc-shaped magnetic lines of force, while electric power is applied to the cathode 7 from the sputter power supply 15 to generate plasma, and the sputtering power supply 1 is generated.
By causing the inert gas ions in the plasma to collide with the target 13 by the negative potential on the target 13 generated by 5, the sputtering film formation is performed. By the collision of the inert gas ions, the target 13
Sputtered particles are emitted from the target 13. It is known that the sputtered particles emitted from the target 13 at that time follow the cosine law.
The closer the distance between and is, the larger the amount of the sputtered particles attached to the substrate 4 is. Therefore, the deposition rate per power applied from the sputtering power source 15 applied to the cathode 7, or the amount of sputtered particles deposited is determined by the distance between the target 13 and the substrate 4. However, when a thin film is formed by the deposition of the sputtered particles on the substrate 4, the uniformity of the film thickness is difficult as the distance between the target 13 and the substrate 4 becomes short. It is necessary to generate erosion over a wide range from the central part to the peripheral part.

Regarding the generation of such erosion, the method described in the above-mentioned Japanese Patent Laid-Open No. 58-3975 is known, and the sputtering film forming apparatus according to the method is shown in FIG. As described above, the coil for generating lines of magnetic force is composed of two coils 11a and 11b. Therefore, for example, when a current opposite to the current applied to the coil 11a is passed through the coil 11b, arc-shaped magnetic force lines 21 and 22 are generated as shown in the figure. Among these, the magnetic force lines 21 are hairpin-shaped on the center of the target 13. In addition to being generated, it passes through the substrate 4.
For this reason, plasma generation became unstable, and sputter film formation could not be performed in the central portion of the target 13. In addition to such a problem, as shown in FIG. 3, when currents having the same polarity are applied to the coils 11a and 11b, arc-shaped magnetic field lines 23 are generated on the outer periphery of the target 13 on the target 13. , This line of magnetic force 23
Since the electrode penetrates the anode 8, the plasma is extinguished by the inflow of electrons in the plasma into the anode 8, and the sputtering film formation cannot be performed on the outer peripheral portion of the target 13.

However, in the multi-substrate simultaneous sputtering film forming apparatus according to the present invention, as shown in FIG. 4, the distance between the substrate 4 and the target 13 is 1/5 to 2 of the diameter of the substrate 4.
/ 5, and cathodes 7 installed on both sides of substrate 4
The coils 11a to 11 have the same magnetic pole structure.
If currents of the same polarity are made to flow in a state in which the current value is appropriately controlled in c, the magnetic force lines 21a, 22 as shown in FIG.
b is generated. As can be seen from this, the hairpin-shaped magnetic force lines 21a repel each other, and the magnetic force lines 21a cannot penetrate the substrate 4 and are formed as flattened. As a result, plasma can be stably generated even in the center of the target 13, so that the sputter deposition can be performed in the center of the target 13. In addition, as shown in FIG.
If currents having the same polarity are passed through 1a and 11b while currents having the opposite polarity are passed through the coil 11c, the magnetic force lines 23a are pushed inward by the magnetic force lines 24 formed by the coil 11c on the outer peripheral portion of the target 13. , Magnetic field line 2
As a result of 3a not penetrating the anode 8, the target 1
It is also possible to stably perform sputter film formation on the outer peripheral portion of No. 3.

As described above, in the case of the multiple substrate simultaneous sputtering film forming method or the multiple substrate simultaneous sputtering film forming apparatus according to the present invention, each of the coils 11a to 11c is within a wide range from the central portion of the target 13 to the outer peripheral portion. By controlling the magnitude and the polarity of the electric current applied to the target 13, erosion of an arbitrary size can be generated at an arbitrary position on the target 13. Therefore, when a thin film is formed on the substrate 4, its thickness is The uniformity of can be improved. Further, at that time, if the bias sputtering power source 16 is connected to the substrate 4 and bias sputtering is performed in which electric power is applied to the substrate 4 during sputtering film formation to cause charged particles in plasma to enter the substrate 4. , The crystallinity of thin films formed by sputter deposition can be improved (for example, the paper “Low-temperature silicon epitaxy by l”).
ow-energy bias sputtering: Appl Phys Lett VOL53, NO.
5 PAGE.364-366) and Japanese Patent Publication No. 60-221563).

Although the basic structure of the multi-substrate simultaneous sputtering film forming apparatus according to the present invention has been described above, FIG. 6 also shows a partial vertical cross section of another example of the multi-substrate simultaneous sputtering film forming apparatus according to the present invention. It shows the configuration. In the previous example, the yoke 9 was interposed between the coils 11a and 11b, but in the present example, the coils 11a and 11b are installed in contact with each other. Therefore, in the present example, since the yoke 9 is not interposed between the coils 11a and 11b, the erosion center cannot be largely moved from the central part of the target 13 to the outer peripheral part as in the previous example. Unlike the above example, the width of the erosion can be widened from the central part to the outer peripheral part of the target 13, and the position of the erosion on the target 13 can be controlled to some extent. This method is suitable for forming a wide film over the peripheral portion, for example, for forming a thin film when the substrate size is small.

FIG. 7 is a partial vertical sectional view showing still another example of the multi-substrate simultaneous sputtering film forming apparatus according to the present invention. In the configuration shown in FIGS. 1 and 6, 3
Although the coils 11a to 11c are arranged, in the present example, as illustrated, the two coils 11a and 11c are arranged.
Only b is arranged. Therefore, although it is not possible to form a film on the outermost periphery of the target 13, it is possible to form a film on the central portion, and the size of the target 13 relative to the size of the substrate 4 is larger than that in the case of FIG. By doing so, erosion at the required outer peripheral position can be obtained, so that the utilization efficiency of the target 13 can be improved as compared with the conventional example.

Lastly, the simultaneous sputtering film forming system for a plurality of substrates according to the present invention will be described. FIG. 8 and FIG. 9 respectively show the plane and the vertical section. It is configured to form a laminated film by including a plurality of simultaneous sputtering film forming apparatuses for a plurality of substrates according to the present invention. That is, as shown in FIG. 8, a plurality of vacuum containers 1 are installed on the transfer chamber 50 at an equal pitch.
A desired thin film is formed each time the vacuum container 1 is sequentially inserted, so that a laminated film is formed on the substrate 4. More specifically, first, two substrates 4 are temporarily fixed to the substrate holder 5 from the atmosphere, and then are evacuated by the evacuation system 2a while being taken into the intake chamber 51. The impurity gas attached to the surface of the substrate 4 is removed in the atmosphere. In this way, the substrate 4 from which the impurity gas has been removed is then heated in the heating chamber 52 provided with the heating source 54 and the vacuum exhaust system 2a so as to be heated to a predetermined temperature suitable for sputtering film formation. Has become. The appropriately heated substrate 4 is then one on which a desired thin film is formed on the substrate 4 each time it is sequentially passed through each of the vacuum chambers 1 as the sputtering film forming processing chamber. The number of vacuum vessels 1 is three in this example, but any number of vacuum vessels 1 can be installed as required.

Here, the internal structure of the transfer chamber 50 will be described. As shown in FIG. 9, a substrate holder 5 for temporarily fixing the substrate 4 is provided and a portion where the vacuum container 1 is attached is provided. A valve 56 having a function of closing the hole 60 and isolating a vacuum atmosphere is installed on the transfer device 55 having a function of index rotation and vertical movement. The transfer device 55 is also connected to a drive source 58 mounted on a device base 59 via an introduction mechanism 57 that maintains a vacuum in the lower part of the transfer chamber 50 and is rotatable. With the above structure, the substrate 4 is first evacuated from the atmosphere into the intake chamber 51, and then the intake chamber 51 is evacuated.
Is rotated by a predetermined angle in the lowered state and then raised again. As a result, the substrate 4 is heated in the heating chamber 5
After being heated to a predetermined temperature, it is introduced into the vacuum container 1 for carrying out sputter film formation by the same operation in the transfer device 55, and a thin film is formed. After this thin film is formed over the necessary layers,
The substrate 4 introduced into the take-out chamber 53 is opened to the atmosphere so that the substrate 4 on which the laminated film formation is completed is taken out to the atmosphere. As described above, in the present film forming system, since the target product is completed every time the transfer device 55 is continuously operated in vacuum in the substrate 4, a high quality thin film product can be produced with high productivity. It is a thing.

[0019]

As described above, according to the first and fifth aspects of the present invention, a method for simultaneously forming a plurality of substrates by which the sputtered particles emitted from a target can be efficiently adhered to each of a plurality of substrates at the same time, and a method thereof. The device also claims
In the case of 4, 6 to 10, the sputtered particles emitted from the target can be efficiently adhered to each of the plurality of substrates simultaneously and with a uniform film thickness. According to Claims 11 to 13, it is possible to obtain a multi-substrate simultaneous sputtering film forming system in which the sputtered particles emitted from the target can be efficiently adhered to each of the plurality of substrates at least simultaneously and as a laminated film. ing.

[Brief description of drawings]

FIG. 1 is a diagram showing a partial vertical cross-sectional structure of an example of a multi-substrate simultaneous sputtering film forming apparatus according to the present invention.

FIG. 2 is a diagram for explaining a sputter film forming method according to a conventional technique in relation to explaining a method for simultaneously sputtering plural substrates according to the present invention.

FIG. 3 is a diagram for explaining a sputter film forming method according to a conventional technique in relation to explaining a method for simultaneously sputtering plural substrates according to the present invention.

FIG. 4 is a diagram for explaining a method for simultaneously sputtering multiple substrates according to the present invention.

FIG. 5 is a diagram for explaining a simultaneous sputtering film forming method for a plurality of substrates according to the present invention.

FIG. 6 is a diagram showing a partial vertical cross-sectional structure of another example of the multi-substrate simultaneous sputtering film forming apparatus according to the present invention.

FIG. 7 is a diagram showing a partial vertical cross-sectional structure of another example of the multi-substrate simultaneous sputtering film forming apparatus according to the present invention.

FIG. 8 is a plan view of a multi-substrate simultaneous sputtering film forming system according to the present invention.

FIG. 9 is a view showing a vertical sectional configuration of the multi-substrate simultaneous sputtering film forming system.

[Explanation of symbols]

1 ... vacuum container, 2 ... vacuum exhaust device, 3 ... gas supply mechanism,
4 ... Substrate, 5 ... Substrate holder, 7 ... Cathode, 8 ... Anode, 9 ... Yoke, 10 ... Electromagnet group, 11a-11c ... Coil, 12a-12c ... Coil power supply, 13 ... Target, 15 ... Sputtering power supply, 16 ... Power supply for bias sputtering, 50 ... Transport chamber, 51 ... Intake chamber, 52 ... Heating chamber, 5
3 ... take-out chamber, 55 ... carrier device, 58 ... drive source

Claims (13)

[Claims] 1. Sputtered particles from a target corresponding to each thin film forming surface in a state where the thin film forming surface of each of the two substrates temporarily fixed back to back faces a target corresponding to the substrate. Is a multi-substrate simultaneous sputtering film forming method for depositing by means of a planar magnetron system, wherein a distance L between the substrate and a target corresponding to the substrate is R × 1/5 ≦ L, where R is the diameter of each substrate.
≦ R × 2/5, and with the arcuate magnetic field lines on each target surface repelling each other to form a flattened magnetic field line, for each thin film formation surface on each of the two substrates,
Simultaneous sputtering film formation method for multiple substrates in which sputtered particles from corresponding targets are attached. 2. Sputtered particles from a target corresponding to each thin film forming surface in a state where the thin film forming surface of each of the two substrates temporarily fixed back to back faces a target corresponding to the substrate. Is a multi-substrate simultaneous sputtering film forming method for depositing by means of a planar magnetron system, wherein a distance L between the substrate and a target corresponding to the substrate is R × 1/5 ≦ L, where R is the diameter of each substrate.
≦ R × 2/5, and while the arcuate magnetic field lines on each target surface are mutually repulsed to form a flattened magnetic field line, the erosion position on each target surface is updated and the target magnetic field on each of the two substrates is updated. For each thin film formation surface,
Simultaneous sputtering film formation method for multiple substrates in which sputtered particles from corresponding targets are attached. 3. Sputtered particles from a target corresponding to each thin film forming surface in a state where the thin film forming surface of each of the two substrates temporarily fixed back to back is made to face a target corresponding to the substrate. Is a multi-substrate simultaneous sputtering film forming method for depositing by means of a planar magnetron system, wherein a distance L between the substrate and a target corresponding to the substrate is R × 1/5 ≦ L, where R is the diameter of each substrate.
≦ R × 2/5, and with the arcuate magnetic field lines on each target surface repulsing each other to form a flattened magnetic field line, the moving speed and the stay time at each of the inner and outer peripheral parts can be controlled, and each target surface can be controlled. Simultaneous sputtering of multiple substrates so that sputtered particles from corresponding targets are attached to each thin film formation surface of each of the two substrates while reciprocating the erosion position from the inner peripheral portion to the outer peripheral portion. Deposition method. 4. Sputtered particles from a target corresponding to each thin film forming surface in a state where the thin film forming surface of each of the two substrates temporarily fixed back to back faces a target corresponding to the substrate. Is a multi-substrate simultaneous sputtering film forming method for depositing by means of a planar magnetron system, wherein a distance L between the substrate and a target corresponding to the substrate is R × 1/5 ≦ L, where R is the diameter of each substrate.
≦ R × 2/5 and applying electric power to the substrate so that charged particles in plasma are incident on the substrate in a state where arc-shaped magnetic field lines on each target surface are mutually repulsed to form a flattened magnetic field line. A method for simultaneous multi-substrate film formation in which sputtered particles from a corresponding target are attached to each thin film formation surface of each of the two substrates. 5. Sputtered particles from a target corresponding to each thin film forming surface in a state where the thin film forming surface of each of the two substrates temporarily fixed back to back faces a target corresponding to the substrate. Is a multi-substrate simultaneous sputtering film forming apparatus for adhering two substrates by a planar magnetron system, and a substrate holder for temporarily fixing two substrates back to back in a central portion of a vacuum container, and a diameter of each substrate is R
As the target and the distance L between each of the substrates is R × 1/5 ≦ L ≦ R × 2/5, and the target is provided at each target surface. And a magnetic circuit for generating arc-shaped magnetic force lines so that flattened magnetic force lines are formed by mutually repulsing the magnetic force lines of the above. 6. Sputtered particles from a target corresponding to each thin film formation surface in a state where the thin film formation surface of each of the two substrates temporarily fixed back to back is made to face a target corresponding to the substrate. Is a multi-substrate simultaneous sputtering film forming apparatus for adhering two substrates by a planar magnetron system, and a substrate holder for temporarily fixing two substrates back to back in a central portion of a vacuum container, and a diameter of each substrate is R
As the target and the distance L between each of the substrates is R × 1/5 ≦ L ≦ R × 2/5, and the target is provided at each target surface. Magnetic circuit for generating arc-shaped magnetic force lines so that the magnetic force lines of the above are mutually repulsed to form a flattened magnetic force line, and electric power is applied to the substrates so that charged particles in plasma are made incident on each of the substrates during sputtering film formation. A multi-substrate simultaneous sputtering film forming apparatus including at least a power source. 7. Sputtered particles from a target corresponding to each thin film forming surface in a state where the thin film forming surface of each of the two substrates temporarily fixed back to back is made to face a target corresponding to the substrate. Is a multi-substrate simultaneous sputtering film forming apparatus for adhering two substrates by a planar magnetron system, and a substrate holder for temporarily fixing two substrates back to back in a central portion of a vacuum container, and a diameter of each substrate is R
As the target and the distance L between each of the substrates is R × 1/5 ≦ L ≦ R × 2/5, and the target is provided at each target surface. A multi-substrate simultaneous sputtering film forming apparatus including at least an electromagnet that generates arc-shaped magnetic force lines so that flattened magnetic force lines are formed by mutually repulsing the magnetic force lines. 8. Sputtered particles from a target corresponding to each thin film forming surface in a state where the thin film forming surface of each of the two substrates temporarily fixed back to back is made to face a target corresponding to the substrate. Is a multi-substrate simultaneous sputtering film forming apparatus for adhering two substrates by a planar magnetron system, and a substrate holder for temporarily fixing two substrates back to back in a central portion of a vacuum container, and a diameter of each substrate is R
As the target and the distance L between each of the substrates is R × 1/5 ≦ L ≦ R × 2/5, and the target is provided at each target surface. And a plurality of electromagnets that generate arc-shaped magnetic force lines so that flattened magnetic force lines are formed by mutually repulsing the magnetic force lines. 9. Sputtered particles from a target corresponding to each thin film forming surface in a state where the thin film forming surface of each of the two substrates temporarily fixed back to back faces a target corresponding to the substrate. Is a multi-substrate simultaneous sputtering film forming apparatus for adhering two substrates by a planar magnetron system, and a substrate holder for temporarily fixing two substrates back to back in a central portion of a vacuum container, and a diameter of each substrate is R
Is provided corresponding to the substrate, and the distance L between each of the substrates is R × 1/5 ≦ L ≦ R × 2/5, and the target is provided corresponding to the target and is separated by a yoke. Multi-substrate simultaneous sputtering film forming apparatus including at least a plurality of electromagnets that generate arc-shaped magnetic force lines so that flattened magnetic force lines are formed by mutually repulsing the magnetic force lines on each target surface in a state of being arranged in a fixed space. .. 10. Sputtered particles from a target corresponding to each thin film forming surface in a state where the thin film forming surface of each of the two substrates temporarily fixed back to back faces a target corresponding to the substrate. A multi-substrate simultaneous sputtering film-forming apparatus for depositing by means of a planar magnetron system, comprising: a substrate holder for temporarily fixing two substrates back-to-back in the center of a vacuum container; In a space which is provided correspondingly and has a distance L between each of the substrates of R × 1/5 ≦ L ≦ R × 2/5, and a space which is provided correspondingly to the target and is separated by a yoke. When arranged, a plurality of electromagnets that generate arc-shaped magnetic force lines so that the magnetic force lines on each target surface repel each other to form flattened magnetic force lines, and a plasma during sputtering film formation. Including at least a plurality of substrates simultaneously sputtering deposition system a charged particle and a power supply applying power to the substrate to be incident on the substrate respectively, the. 11. A thin film formation surface of each of the two substrates temporarily fixed back-to-back is accommodated in each of the plurality of substrate simultaneous sputtering film forming apparatuses arranged in sequence. A plurality of substrates simultaneously for forming a laminated film on the thin film forming surface by adhering sputtered particles from the corresponding target to each of the thin film forming surfaces by a planar magnetron method in a state of facing the thin film forming surface. A sputtering film forming system, wherein each of the plural substrates simultaneous sputtering film forming apparatus comprises a substrate holder for temporarily fixing two substrates back to back in a central portion of a vacuum container, and a diameter of each substrate for R. Correspondingly provided, the distance L between each of the substrates is R × 1/5
A target satisfying ≦ L ≦ R × 2/5, and a magnetic circuit that is provided corresponding to the target and that generates arc-shaped magnetic force lines so that the magnetic force lines on each target surface are mutually repelled to form flattened magnetic force lines; A multi-substrate simultaneous sputtering film-forming system configured as a multi-substrate simultaneous sputtering film-forming apparatus including at least the following. 12. A thin film formation surface of each of the two substrates temporarily fixed back-to-back is accommodated in each of the plurality of substrate simultaneous sputtering film forming apparatuses arranged in plurality. A plurality of substrates simultaneously for forming a laminated film on the thin film forming surface by adhering sputtered particles from the corresponding target to each of the thin film forming surfaces by a planar magnetron method in a state of facing the thin film forming surface. A sputtering film forming system, wherein each of the plural substrates simultaneous sputtering film forming apparatus comprises a substrate holder for temporarily fixing two substrates back to back in a central portion of a vacuum container, and a diameter of each substrate for R. Correspondingly provided, the distance L between each of the substrates is R × 1/5
A target satisfying ≦ L ≦ R × 2/5, and a magnetic circuit that is provided corresponding to the target and that generates arc-shaped magnetic force lines so that the magnetic force lines on each target surface are mutually repelled to form flattened magnetic force lines; A multi-substrate simultaneous sputtering film forming system configured as a multi-substrate simultaneous sputtering film forming apparatus including at least a power source for applying electric power to the substrates so that charged particles in plasma enter each of the substrates during the sputter film forming. .. 13. A thin film formation surface of each of the two substrates temporarily fixed back-to-back is accommodated in each of the plurality of substrate simultaneous sputtering film forming apparatuses arranged in correspondence. A plurality of substrates simultaneously for forming a laminated film on the thin film forming surface by adhering sputtered particles from the corresponding target to each of the thin film forming surfaces by a planar magnetron method in a state of facing the thin film forming surface. A sputtering film forming system, wherein each of the plural substrates simultaneous sputtering film forming apparatus comprises a substrate holder for temporarily fixing two substrates back to back in a central portion of a vacuum container, and a diameter of each substrate for R. Correspondingly provided, the distance L between each of the substrates is R × 1/5
In a state in which the target is set to ≦ L ≦ R × 2/5 and the target is provided in a space corresponding to the target and is separated by a yoke, the magnetic lines of force on the respective target surfaces repel each other and the flattened magnetic lines of force are reciprocated. Multi-substrate co-sputtering including at least a plurality of electromagnets that generate arc-shaped magnetic field lines so that the substrate is formed, and a power source that applies electric power to the substrates to cause charged particles in plasma to enter each of the substrates during sputtering film formation. A multi-substrate simultaneous sputtering film forming system configured as a film forming apparatus.