JPH052636B2 - - Google Patents

Info

Publication number
JPH052636B2
JPH052636B2 JP24351184A JP24351184A JPH052636B2 JP H052636 B2 JPH052636 B2 JP H052636B2 JP 24351184 A JP24351184 A JP 24351184A JP 24351184 A JP24351184 A JP 24351184A JP H052636 B2 JPH052636 B2 JP H052636B2
Authority
JP
Japan
Prior art keywords
temperature
single crystal
liquid surface
crystal growth
melt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP24351184A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61122187A (ja
Inventor
Takao Takahashi
Shingo Hayashi
Yoshiaki Tada
Noryuki Oobuchi
Toshio Ooishi
Mitsuhiro Yamato
Kokichi Higuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Shibaura Machine Co Ltd
Original Assignee
Toshiba Machine Co Ltd
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Machine Co Ltd, Toshiba Ceramics Co Ltd filed Critical Toshiba Machine Co Ltd
Priority to JP24351184A priority Critical patent/JPS61122187A/ja
Publication of JPS61122187A publication Critical patent/JPS61122187A/ja
Publication of JPH052636B2 publication Critical patent/JPH052636B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14Heating of the melt or the crystallised materials
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20Controlling or regulating
    • C30B15/22Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP24351184A 1984-11-20 1984-11-20 単結晶引上機 Granted JPS61122187A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24351184A JPS61122187A (ja) 1984-11-20 1984-11-20 単結晶引上機

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24351184A JPS61122187A (ja) 1984-11-20 1984-11-20 単結晶引上機

Publications (2)

Publication Number Publication Date
JPS61122187A JPS61122187A (ja) 1986-06-10
JPH052636B2 true JPH052636B2 (enrdf_load_stackoverflow) 1993-01-12

Family

ID=17104988

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24351184A Granted JPS61122187A (ja) 1984-11-20 1984-11-20 単結晶引上機

Country Status (1)

Country Link
JP (1) JPS61122187A (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2707736B2 (ja) * 1989-04-10 1998-02-04 三菱マテリアル株式会社 単結晶育成方法
US5408952A (en) * 1991-04-26 1995-04-25 Mitsubishi Materials Corporation Single crystal growth method
US5746828A (en) * 1996-01-16 1998-05-05 General Signal Corporation Temperature control system for growing high-purity monocrystals
TW541365B (en) * 1996-08-30 2003-07-11 Sumitomo Sitix Corp Single crystal pulling method and single crystal pulling device
KR100951853B1 (ko) 2007-12-27 2010-04-12 주식회사 실트론 잉곳 직경 조절장치 및 잉곳 성장방법

Also Published As

Publication number Publication date
JPS61122187A (ja) 1986-06-10

Similar Documents

Publication Publication Date Title
EP1169497B1 (en) Method and system of controlling taper growth in a semiconductor crystal growth process
TWI395842B (zh) 矽單晶提拉方法
JP4253123B2 (ja) シリコン結晶の成長を制御する方法及びシステム
KR101901308B1 (ko) 실리콘 융액면의 높이위치의 산출방법 및 실리콘 단결정의 인상방법 그리고 실리콘 단결정 인상장치
US5223078A (en) Conical portion growth control method and apparatus
US6203611B1 (en) Method of controlling growth of a semiconductor crystal to automatically transition from taper growth to target diameter growth
JPH0438719B2 (enrdf_load_stackoverflow)
KR20010080084A (ko) 결정을 정확하게 인상하는 방법 및 장치
US5660629A (en) Apparatus for detecting the diameter of a single-crystal silicon
US6030451A (en) Two camera diameter control system with diameter tracking for silicon ingot growth
JP6939714B2 (ja) 融液面と種結晶の間隔測定方法、種結晶の予熱方法、及び単結晶の製造方法
JPH052636B2 (enrdf_load_stackoverflow)
JP3770013B2 (ja) 単結晶引上方法
JP2735960B2 (ja) 液面制御方法
JP2001019588A (ja) 単結晶直径の制御方法及び結晶成長装置
CN114761626B (zh) 单晶制造系统及单晶制造方法
CN112857297B (zh) 单晶棒直径测量装置、单晶棒生长系统及方法
JPH09118585A (ja) 単結晶引上装置および単結晶の引上方法
JPH07277879A (ja) Cz法による単結晶製造装置および融液レベル制御方法
JPS6283395A (ja) 単結晶引上装置の直径制御方法
JPS6027686A (ja) 単結晶製造装置
JPS58145692A (ja) 単結晶の製造方法
JPH10167880A (ja) 単結晶成長方法及びその装置
JPH0897139A (ja) 化合物半導体単結晶の製造方法および製造装置
JPS61136989A (ja) 引上げ法における単結晶育成時の形状制御方法

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term