JPH0526332B2 - - Google Patents
Info
- Publication number
- JPH0526332B2 JPH0526332B2 JP5144683A JP5144683A JPH0526332B2 JP H0526332 B2 JPH0526332 B2 JP H0526332B2 JP 5144683 A JP5144683 A JP 5144683A JP 5144683 A JP5144683 A JP 5144683A JP H0526332 B2 JPH0526332 B2 JP H0526332B2
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- resist
- forming
- electronic device
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 claims description 21
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 235000019441 ethanol Nutrition 0.000 claims description 9
- 230000000087 stabilizing effect Effects 0.000 claims description 9
- 239000012298 atmosphere Substances 0.000 claims description 8
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 4
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 2
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 description 8
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 125000003158 alcohol group Chemical group 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 1
- 229960001701 chloroform Drugs 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Natural products CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000009291 secondary effect Effects 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Waveguides (AREA)
Description
【発明の詳細な説明】
〔発明の属する技術分野〕
本発明はLi2B4O7単結晶を用いた電子デバイス
の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of the Invention] The present invention relates to a method for manufacturing an electronic device using a Li 2 B 4 O 7 single crystal.
水晶やLiTaO7単結晶等の圧電体は表面波装置
バルク波装置等の電子デバイスにすでに応用され
ている。しかし、従来の圧電材料は電子デバイス
の要求を必ずしも満たしてはいない。例えば水晶
では電気機械結合係数K2が0.01％と低く、用途が
限られる。これに対しLi2B4O7単結晶は
Electronics Lettevs Vol.17No.１（1980）P11にさ
らに特性が良いと報告され、電子デバイスの高性
能化に注目される。
Piezoelectric materials such as quartz and LiTaO 7 single crystals have already been applied to electronic devices such as surface wave devices and bulk wave devices. However, conventional piezoelectric materials do not always meet the requirements of electronic devices. For example, quartz has a low electromechanical coupling coefficient K 2 of 0.01%, which limits its uses. On the other hand, Li 2 B 4 O 7 single crystal
It was reported in Electronics Lettevs Vol. 17 No. 1 (1980) P11 that its properties were even better, and it attracted attention for improving the performance of electronic devices.
しかし、Li2B4O7単結晶は酸に侵されるため、
電子デバイス応用に不可欠な電極形成工程で、リ
ン酸系の従来のAlエツチング液を用いる方法で
は微細加工はできなかつた。このため電子デバイ
スへの応用は難しいという欠点があつた。 However, since Li 2 B 4 O 7 single crystal is attacked by acid,
In the electrode formation process, which is essential for electronic device applications, microfabrication could not be achieved using the conventional method using a phosphoric acid-based Al etching solution. Therefore, it has the disadvantage that it is difficult to apply it to electronic devices.
本発明はLi2B4O7単結晶を用いた高性能な電子
デバイスを製造する方法を提供するにある。
The present invention provides a method for manufacturing high performance electronic devices using Li 2 B 4 O 7 single crystal.
本発明はLi2B4O7単結晶を用いた電子デバイス
を製造する際に該結晶と電極の密着性を向上させ
る特長を有するリフトオフを用いた電子デバイス
の製造方法である。すなわちリフトオフは塗布し
たレジストに反転像を形成し、その上から金属膜
を形成する方法として知られている。
The present invention is a method for manufacturing an electronic device using lift-off, which has the feature of improving the adhesion between the crystal and an electrode when manufacturing an electronic device using a Li 2 B 4 O 7 single crystal. That is, lift-off is known as a method of forming an inverted image on a coated resist and forming a metal film thereon.
その際Li2B4O7単結晶表面には、Li2B4O7がわ
ずかに加水分解を起し、LiOHとB2O3が形成さ
れ、親水性となつている。これらは有機溶剤等の
前処理洗浄によつては除去できず、特にLiOHは
Al等の金属膜と反応し、密着力を弱めてしまう。
そこで本発明の特徴は前処理の後に表面安定化雰
囲気中に侵すことである。例えば0.1％のフツ化
水素を溶かしたエチルアルコールの表面安定化液
中に浸すことで、
LiOH＋HF→LiF＋H2Oの反応によりLiOHは
フツ化リチウムに変化し、又発生した水（H2O）
はエチルアルコール中に吸収されるため表面は安
定化する。このため金属膜との密着力は増大す
る。 At this time, Li 2 B 4 O 7 undergoes slight hydrolysis on the surface of the Li 2 B 4 O 7 single crystal, forming LiOH and B 2 O 3 , making it hydrophilic. These cannot be removed by pre-cleaning with organic solvents, etc., especially LiOH.
Reacts with metal films such as Al and weakens adhesion.
Therefore, a feature of the present invention is that the surface is immersed in a surface stabilizing atmosphere after the pretreatment. For example, by immersing it in a surface stabilizing solution of ethyl alcohol containing 0.1% hydrogen fluoride, LiOH changes to lithium fluoride through the reaction of LiOH + HF → LiF + H 2 O, and the generated water (H 2 O)
is absorbed into ethyl alcohol, which stabilizes the surface. Therefore, the adhesive force with the metal film increases.
本発明の実施例を図面を参照しながら説明す
る。第１図〜第７図は本発明のLi2B4O7単結晶を
用いた電子デバイスの一つである。例えば弾性表
面波装置の製造方法を示すものである。
Embodiments of the present invention will be described with reference to the drawings. 1 to 7 show one of the electronic devices using the Li 2 B 4 O 7 single crystal of the present invention. For example, it shows a method of manufacturing a surface acoustic wave device.
先ず作成結晶から切出した約0.5mmの薄い板１
の片面を鏡面に研磨する。次に前処理として表面
の汚れ、油脂等を取るため、加熱トリクレン中に
浸し、アルコールに置換し、回転乾燥を行なう
（第１図）。 First, create a thin plate 1 of about 0.5 mm cut from the crystal.
Polish one side to a mirror surface. Next, as a pretreatment to remove dirt, oil, etc. from the surface, it is immersed in heated trichloromethane, replaced with alcohol, and then rotary dried (Figure 1).
次に0.1重量％のフツ化水素を混入したエチル
アルコール中に１分間浸し、純エチルアルコール
に置換し、回転乾燥を行ない表面安定化（その表
面状態を２として表わす）を行なう（第２図）。 Next, it is immersed in ethyl alcohol mixed with 0.1% by weight of hydrogen fluoride for 1 minute, replaced with pure ethyl alcohol, and then dried by rotation to stabilize the surface (the surface condition is expressed as 2) (Figure 2). .
この後、レジスト３例えばAZ1350Jを回転数
5000rpm30秒の条件で塗布し、85℃で30分間乾燥
する（第３図）。 After this, rotate resist 3 for example AZ1350J
Apply at 5000 rpm for 30 seconds and dry at 85°C for 30 minutes (Figure 3).
次に表面硬化剤モノクロロベンゼン中に10分間
浸し、回転乾燥を行ない表面だけ硬化４する（第
４図）。 Next, it is immersed in the surface hardening agent monochlorobenzene for 10 minutes and then rotary dried to harden only the surface (Fig. 4).
そして反転マスクを用いて、露光を行ない、現
像液で現像する（第５図）。 Then, exposure is performed using a reversal mask, and development is performed with a developer (FIG. 5).
この後結晶温度が85℃より大にならないように
真空蒸着装置中でAl層５を例えば5000A形成する
（第６図）。 Thereafter, an Al layer 5 of, for example, 5000 A is formed in a vacuum evaporation apparatus so that the crystal temperature does not exceed 85° C. (FIG. 6).
次いで得られたウエハを取出して、アセトン又
はエチルアルコール中に浸してリフトオフを行な
い、回転乾燥を行なう（第７図）。 The obtained wafer is then taken out, immersed in acetone or ethyl alcohol for lift-off, and then rotary dried (FIG. 7).
最後に第８図に示す如くチツプ化にする。 Finally, it is made into chips as shown in FIG.
なお上記実施例において、Li2B4O7単結晶の圧
電体についての電子デバイスの製造方法における
表面安定化雰囲気は、上記の0.1重量％フツ化水
素を含むエチルアルコールとしたが１重量％濃度
までは表面粗れがなくて充分であつた。またエチ
ルアルコールでなくても、メチルアルコールでも
充分効果があつた。さらに表面安定化雰囲気は上
記以外でLi2B4O7単結晶の表面を安定化させるも
のは何でも良い。なお、上述の実施例において
は、表面安定化雰囲気の作用により金属膜の密着
力が大幅に向上したため、2μｍ以下までの微細
加工ができるという副次的効果も得られた。ま
た、第７図に示す工程時には、Al形成温度が85
℃より大きい場合には、レジストがはがれず、リ
フトオフができない場合もあつた。
In the above example, the surface stabilizing atmosphere in the method for manufacturing an electronic device for a Li 2 B 4 O 7 single crystal piezoelectric material was ethyl alcohol containing 0.1% by weight of hydrogen fluoride, but the concentration was 1% by weight. The results were satisfactory with no surface roughness. In addition, methyl alcohol was also sufficiently effective in place of ethyl alcohol. Further, the surface stabilizing atmosphere may be any atmosphere other than those mentioned above that stabilizes the surface of the Li 2 B 4 O 7 single crystal. In the above-mentioned example, the adhesion of the metal film was greatly improved due to the effect of the surface stabilizing atmosphere, so a secondary effect was obtained in that microfabrication of down to 2 μm or less was possible. Also, during the process shown in Figure 7, the Al formation temperature was 85
When the temperature was higher than ℃, the resist could not be peeled off and lift-off could not be performed in some cases.
本発明のLi2B4O7単結晶を用いたリフトオフ法
による電子デバイスの製造方法によれば、従来リ
フトオフ法では例えばAl等の金属膜の密着力が
低かつた（25μｍφのAl線のボンデング強度は０
〜３ｇ）のが大巾に向上（同強度は10ｇ以上）し
た。これは表面安定化雰囲気の作用により金属膜
の密着力が大巾に向上したためである。このこと
により、該結晶の電子デバイス化が加速され、電
気、通信等工業上大きな寄与となる。
According to the method of manufacturing an electronic device by the lift-off method using a Li 2 B 4 O 7 single crystal of the present invention, the adhesion of metal films such as Al was low in the conventional lift-off method (bonding of Al wire with a diameter of 25 μm). Strength is 0
~3g) has been greatly improved (the same strength is over 10g). This is because the adhesion of the metal film was greatly improved by the effect of the surface stabilizing atmosphere. This accelerates the use of the crystal as an electronic device, making a major contribution to industries such as electricity and communications.
第１図〜第８図は本発明によるLi2B4O7単結晶
を用いた電子デバイスの製造方法を示す工程断面
図である。
１……Li2B4O7単結晶の薄い板、２……表面安
定化層、３……レジスト、４……レジストの表面
硬化層、５……Al等の金属膜。
1 to 8 are process cross-sectional views showing a method of manufacturing an electronic device using Li 2 B 4 O 7 single crystal according to the present invention. 1... Thin plate of Li 2 B 4 O 7 single crystal, 2... Surface stabilizing layer, 3... Resist, 4... Surface hardening layer of resist, 5... Metal film such as Al.
Claims (1)
る第１の工程と、 この圧電体を表面安定化雰囲気中に浸す第２の
工程と、 前記圧電体表面にレジストを塗布し、このレジ
ストに電極の反転像を形成した上から金属層を形
成する第３の工程と、 リフトオフを行なうことにより前記金属層より
電極を形成する第４の工程とを備えたことを特徴
とするLi2B4O7単結晶を用いた電子デバイスの製
造方法。 ２ 前記第２の工程は、前記圧電体を１重量％以
下のフツ化水素を含むエチルアルコール又はメチ
ルアルコールである前記表面安定化雰囲気中に浸
す工程であることを特徴とする特許請求の範囲第
１項記載のLi2B4O7単結晶を用いた電子デバイス
の製造方法。 ３ 前記第３の工程は、前記圧電体表面にレジス
トを塗布し、このレジストに電極の反転像を形成
した上から85℃以下の温度で金属層を形成する工
程であることを特徴とする特許請求の範囲第１項
記載のLi2B4O7単結晶を用いた電子デバイスの製
造方法。[Claims] 1. A first step of cleaning the surface of a piezoelectric body made of Li 2 B 4 O 7 single crystal, a second step of immersing the piezoelectric body in a surface stabilizing atmosphere, and a surface of the piezoelectric body. a third step of applying a resist to the resist, forming an inverted image of the electrode on the resist, and forming a metal layer thereon; and a fourth step of forming an electrode from the metal layer by performing lift-off. A method for manufacturing an electronic device using a Li 2 B 4 O 7 single crystal, characterized in that: 2. The second step is a step of immersing the piezoelectric body in the surface stabilizing atmosphere which is ethyl alcohol or methyl alcohol containing 1% by weight or less of hydrogen fluoride. A method for manufacturing an electronic device using the Li 2 B 4 O 7 single crystal according to item 1. 3. A patent characterized in that the third step is a step of applying a resist to the surface of the piezoelectric body, forming an inverted image of the electrode on the resist, and then forming a metal layer at a temperature of 85° C. or lower. A method for manufacturing an electronic device using the Li 2 B 4 O 7 single crystal according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5144683A JPS59177932A (en) | 1983-03-29 | 1983-03-29 | Manufacture of electronic device using li2b4o7 single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5144683A JPS59177932A (en) | 1983-03-29 | 1983-03-29 | Manufacture of electronic device using li2b4o7 single crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59177932A JPS59177932A (en) | 1984-10-08 |
| JPH0526332B2 true JPH0526332B2 (en) | 1993-04-15 |
Family
ID=12887154
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5144683A Granted JPS59177932A (en) | 1983-03-29 | 1983-03-29 | Manufacture of electronic device using li2b4o7 single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59177932A (en) |
-
1983
- 1983-03-29 JP JP5144683A patent/JPS59177932A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59177932A (en) | 1984-10-08 |
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