JPH0142623B2 - - Google Patents
Info
- Publication number
- JPH0142623B2 JPH0142623B2 JP58027057A JP2705783A JPH0142623B2 JP H0142623 B2 JPH0142623 B2 JP H0142623B2 JP 58027057 A JP58027057 A JP 58027057A JP 2705783 A JP2705783 A JP 2705783A JP H0142623 B2 JPH0142623 B2 JP H0142623B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- phosphorus
- glass layer
- manufacturing
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 38
- 239000000758 substrate Substances 0.000 claims description 30
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 18
- 239000011521 glass Substances 0.000 claims description 15
- 229910052698 phosphorus Inorganic materials 0.000 claims description 13
- 239000011574 phosphorus Substances 0.000 claims description 13
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 12
- 229920002120 photoresistant polymer Polymers 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 7
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 6
- 239000011259 mixed solution Substances 0.000 claims description 6
- 229910017604 nitric acid Inorganic materials 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims 1
- 239000002195 soluble material Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229960002050 hydrofluoric acid Drugs 0.000 description 3
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 2
- 239000007853 buffer solution Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- DLYUQMMRRRQYAE-UHFFFAOYSA-N tetraphosphorus decaoxide Chemical compound O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
【発明の詳細な説明】
［発明の技術分野］
本発明は半導体装置の製造方法に係り、特に半
導体基板上に接着強度の強いホトレジスト膜が形
成され得るようにした半導体装置の製造方法に関
するものである。[Detailed Description of the Invention] [Technical Field of the Invention] The present invention relates to a method for manufacturing a semiconductor device, and more particularly, to a method for manufacturing a semiconductor device in which a photoresist film with strong adhesive strength can be formed on a semiconductor substrate. be.
［発明の技術的背景］
半導体基板にリン拡散した後、その基板上にホ
トレジストを塗布する場合、その形成されたホト
レジスト膜を接着強度を維持するために半導体基
板上に形成されたリンガラス表面上の水溶性物質
を除去する必要がある。[Technical Background of the Invention] When phosphorus is diffused into a semiconductor substrate and then a photoresist is coated on the substrate, the formed photoresist film is coated on the surface of the phosphorus glass formed on the semiconductor substrate in order to maintain adhesive strength. It is necessary to remove water-soluble substances.
そのため従来では、上記の半導体基板をフツ化
アンモニユームとフツ酸との混合液（バツフアフ
ツ酸）中に侵漬するかあるいは上記半導体基板を
750〜1250℃程度の高温の水蒸気雰囲気中に投入
している。 Therefore, in the past, the above-mentioned semiconductor substrate was immersed in a mixed solution of ammonium fluoride and hydrofluoric acid (buff-fluoric acid), or the semiconductor substrate was immersed in a mixed solution of ammonium fluoride and hydrofluoric acid.
It is placed in a steam atmosphere at a high temperature of about 750 to 1250 degrees Celsius.
［背景技術の問題点］
しかしながら、半導体基板上に形成されるリン
ガラスがきわめて薄い場合には、バツフア液にて
腐食処理を行なうと、リンガラス上の水溶性物質
のみならずリンガラス層までも腐食されて除去さ
れてしまう欠点がある。[Problems in the Background Art] However, when the phosphor glass formed on the semiconductor substrate is extremely thin, when the corrosion treatment is performed using a buffer solution, not only the water-soluble substances on the phosphor glass but also the phosphor glass layer are destroyed. It has the disadvantage of being corroded and removed.
このガラス層は、たとえばトランジスタのエミ
ツタ−ベース間電圧に影響を与える等、半導体装
置の電気的特性を一定に維持するために腐食され
ないことが必要である。 This glass layer must not be corroded in order to maintain constant electrical characteristics of the semiconductor device, such as affecting the emitter-base voltage of the transistor.
また、半導体基板を高温の水蒸気雰囲気中に投
入する場合には、高温処理のために既拡散不純物
の半導体基板への再拡散により拡散層の寸法にバ
ラツキを生じさせ設計通りの特性が得られなくな
る等の問題点があつた。 In addition, when a semiconductor substrate is placed in a high-temperature steam atmosphere, the high-temperature treatment causes the diffused impurities to re-diffuse into the semiconductor substrate, causing variations in the dimensions of the diffusion layer, making it impossible to obtain the designed characteristics. There were other problems.
［発明の目的］
本発明は、上記の事情に基づきなされたもの
で、リン拡散後の半導体基板をバツフア液への浸
漬、あるいは高温水蒸気中での処理を施こすこと
なく、強固な接着強度を有するホトレジスト膜を
形成し得るようにした半導体装置の製造方法を提
供することを目的とする。[Object of the Invention] The present invention has been made based on the above-mentioned circumstances, and provides strong adhesive strength without immersing a semiconductor substrate after phosphorus diffusion in a buffer solution or treating it in high-temperature steam. An object of the present invention is to provide a method for manufacturing a semiconductor device that can form a photoresist film having the following characteristics.
［発明の概要］
すなわち、本発明は、半導体基板にリンを熱拡
散する第１の工程と、この半導体基板を所定温度
に加熱した硫酸と硝酸との混合液中に浸漬して上
記第１の工程によつて上記半導体基板のリンガラ
ス層の表面に生成された水溶性物質を除去する第
２の工程と、次いで上記半導体基板を清浄する第
３の工程と、次いで上記半導体基板を乾燥させる
第４の工程と、さらにこの半導体基板の表面にホ
トレジストを塗布する第５の工程とを含むことを
特徴とする半導体装置の製造方法である。[Summary of the Invention] That is, the present invention includes a first step of thermally diffusing phosphorus into a semiconductor substrate, and a second step of immersing the semiconductor substrate in a mixed solution of sulfuric acid and nitric acid heated to a predetermined temperature. a second step of removing water-soluble substances generated on the surface of the phosphorus glass layer of the semiconductor substrate during the step; a third step of cleaning the semiconductor substrate; and a third step of drying the semiconductor substrate. This method of manufacturing a semiconductor device is characterized in that it includes step 4 and a fifth step of applying photoresist to the surface of the semiconductor substrate.
［発明の実施例］
まず、第１の工程として通常の方法にしたが
い、半導体基板上にリンを熱拡散する。[Embodiments of the Invention] First, as a first step, phosphorus is thermally diffused onto a semiconductor substrate according to a conventional method.
この場合、半導体基板上にリンガラス層が形成
され、このガラス層の表面に五酸化リン水溶性物
質が生成される。 In this case, a phosphorus glass layer is formed on the semiconductor substrate, and a phosphorus pentoxide water-soluble substance is generated on the surface of this glass layer.
次いで、第２の工程として硫酸と硝酸との容量
比が約４：１で、かつ70℃以上に加熱された硫
酸、硝酸の混合液中に上記半導体基板を約５分間
浸漬させる。 Next, as a second step, the semiconductor substrate is immersed for about 5 minutes in a mixed solution of sulfuric acid and nitric acid in a volume ratio of about 4:1 and heated to 70° C. or higher.
この第２の工程により、リンガラス表面に付着
した上記水溶性物質を分解除去される。 In this second step, the water-soluble substances adhering to the surface of the phosphor glass are decomposed and removed.
なお、硫酸、硝酸混合液は、バツフアフツ酸等
とは異なり、リンガラス自体を腐食させる作用が
ないのできわめて薄いリンガラス層でも何ら侵さ
れることがなく、半導体装置の特性を劣化させる
ことがない。 Note that, unlike buffered acid and the like, a mixed solution of sulfuric acid and nitric acid does not have the effect of corroding the phosphorus glass itself, so even an extremely thin phosphorus glass layer will not be corroded at all, and the characteristics of the semiconductor device will not deteriorate.
次いで、第３の工程として、上記半導体基板を
水洗等により清浄する。 Next, as a third step, the semiconductor substrate is cleaned by washing with water or the like.
さらに第４の工程としてたとえば200〜600℃に
加熱された空気中、あるいは酸素ガスおよび不活
性雰囲気中で乾燥し、上記半導体基板の水蒸気を
除去する。 Furthermore, as a fourth step, the semiconductor substrate is dried in air heated to 200 to 600° C. or in an oxygen gas and inert atmosphere to remove water vapor from the semiconductor substrate.
最後に、第５の工程として、上記半導体基板に
通常の方法にしたがつてホトレジストコート材を
塗布し、ホトレジスト膜を形成する。 Finally, as a fifth step, a photoresist coating material is applied to the semiconductor substrate according to a conventional method to form a photoresist film.
［発明の効果］
上記の工程を経て形成されたホトレジスト膜
は、リンガラス上の水溶性物質が除去されている
ので、接着強度がきわめて強固であり、後の処理
工程中に剥離するようなことがなく、設計通りの
半導体装置を製作する場合、良好な結果を得るこ
とができる。[Effect of the invention] The photoresist film formed through the above steps has extremely strong adhesive strength because the water-soluble substances on the phosphor glass have been removed, and there is no possibility of peeling during the subsequent processing steps. When manufacturing a semiconductor device according to the design without any problems, good results can be obtained.
また、薄いガラス層が残るので、トランジスタ
等の電気的特性が悪化することがない効果もあ
る。 Further, since a thin glass layer remains, there is an effect that the electrical characteristics of transistors etc. are not deteriorated.
なお、本発明の実施例では、硫酸、硝酸の混合
容量比を４：１にしたが、リン拡散の条件によつ
て種々に変化させ得ることはいうまでもない。 In the examples of the present invention, the mixing volume ratio of sulfuric acid and nitric acid was set to 4:1, but it goes without saying that it can be varied depending on the conditions of phosphorus diffusion.
Claims (1)
と、この半導体基板を所定温度に加熱した硫酸と
硝酸との混合液中に浸漬して上記第１の工程によ
つて上記半導体基板のリンガラス層の表面に生成
された水溶性物質層のみを除去し、リンガラス層
は残す第２の工程と、次いで上記半導体基板を清
浄する第３の工程と、次いで上記半導体基板を乾
燥させる第４の工程と、さらにこの半導体基板の
表面にホトレジストを塗布する第５の工程とを含
むことを特徴とする半導体装置の製造方法。 ２ 上記硫酸と硝酸との混合液は、その容量比が
４：１であることを特徴とする特許請求の範囲第
１項記載の半導体装置の製造方法。[Claims] 1. A first step of thermally diffusing phosphorus into a semiconductor substrate, and immersing this semiconductor substrate in a mixture of sulfuric acid and nitric acid heated to a predetermined temperature. a second step of removing only the water-soluble material layer generated on the surface of the phosphorus glass layer of the semiconductor substrate and leaving the phosphorus glass layer; a third step of cleaning the semiconductor substrate; and then a third step of cleaning the semiconductor substrate; A method for manufacturing a semiconductor device, comprising: a fourth step of drying the semiconductor substrate; and a fifth step of applying a photoresist to the surface of the semiconductor substrate. 2. The method of manufacturing a semiconductor device according to claim 1, wherein the mixed solution of sulfuric acid and nitric acid has a volume ratio of 4:1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2705783A JPS59154022A (en) | 1983-02-22 | 1983-02-22 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2705783A JPS59154022A (en) | 1983-02-22 | 1983-02-22 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59154022A JPS59154022A (en) | 1984-09-03 |
| JPH0142623B2 true JPH0142623B2 (en) | 1989-09-13 |
Family
ID=12210432
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2705783A Granted JPS59154022A (en) | 1983-02-22 | 1983-02-22 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59154022A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100436007B1 (en) * | 1996-07-19 | 2004-10-14 | 삼성전자주식회사 | Apparatus for improving chemical wetting on wafer and etch and etch method thereof |
| KR20010056794A (en) * | 1999-12-16 | 2001-07-04 | 박종섭 | Process of lithography for diminishing defect of pattern |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51114276A (en) * | 1975-03-20 | 1976-10-07 | Ajinomoto Kk | Method of collecting cocoons |
| JPS5330876A (en) * | 1976-09-03 | 1978-03-23 | Akai Electric | Method of cleaning surface of semiconductor |
-
1983
- 1983-02-22 JP JP2705783A patent/JPS59154022A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51114276A (en) * | 1975-03-20 | 1976-10-07 | Ajinomoto Kk | Method of collecting cocoons |
| JPS5330876A (en) * | 1976-09-03 | 1978-03-23 | Akai Electric | Method of cleaning surface of semiconductor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59154022A (en) | 1984-09-03 |
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