JPH05243496A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPH05243496A JPH05243496A JP4001692A JP4001692A JPH05243496A JP H05243496 A JPH05243496 A JP H05243496A JP 4001692 A JP4001692 A JP 4001692A JP 4001692 A JP4001692 A JP 4001692A JP H05243496 A JPH05243496 A JP H05243496A
- Authority
- JP
- Japan
- Prior art keywords
- resistor
- resistance value
- film
- polycrystalline silicon
- laser light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は半導体装置の製造方法に
関し、特に多結晶シリコン膜からなる抵抗体の形成方法
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for forming a resistor made of a polycrystalline silicon film.
【０００２】[0002]
【従来の技術】従来の半導体装置の製造工程における抵
抗体の形成は、半導体基板上に多結晶シリコン膜をＬＰ
ＣＶＤ法により形成する方法が用いられている。この時
の多結晶シリコンのグレインサイズは数ｎｍ〜数１０ｎ
ｍであり、このグレインサイズのばらつきが多結晶シリ
コン膜の抵抗値のばらつきを±２０％以上にし、通常の
拡散抵抗のばらつき±１５％以下に比べて大きくなる主
要因になっていた。2. Description of the Related Art In the conventional semiconductor device manufacturing process, a resistor is formed by depositing a polycrystalline silicon film on a semiconductor substrate.
A method of forming by the CVD method is used. At this time, the grain size of the polycrystalline silicon is several nm to several tens of nanometers.
This variation in grain size is the main factor that makes the variation in resistance of the polycrystalline silicon film ± 20% or more, which is larger than the variation in normal diffusion resistance ± 15% or less.
【０００３】[0003]
【発明が解決しようとする課題】上述した従来の半導体
装置の製造工程で形成される多結晶シリコン膜からなる
抵抗体では、抵抗値のばらつきが±２０％以上と大きい
ため、半導体装置の特性のばらつきも大きくなり、製造
歩留りが低下するという問題点があった。In the resistor made of the polycrystalline silicon film formed in the above-described conventional manufacturing process of the semiconductor device, the variation in the resistance value is as large as ± 20% or more, so that the characteristic of the semiconductor device is There is a problem that the variation becomes large and the manufacturing yield decreases.
【０００４】[0004]
【課題を解決するための手段】本発明の半導体装置の製
造方法は、半導体基板上に多結晶シリコン膜からなる抵
抗体を形成する工程と、ＷＦ6 雰囲気中で前記抵抗体の
抵抗値を測定すると共にこの抵抗体上にレーザ光を照射
して金属膜を堆積する工程とを含むものである。According to the method of manufacturing a semiconductor device of the present invention, a step of forming a resistor made of a polycrystalline silicon film on a semiconductor substrate, and measuring the resistance value of the resistor in a WF 6 atmosphere. And irradiating the resistor with laser light to deposit a metal film.
【０００５】抵抗体が形成されたシリコン基板をＷＦ6
（６フッ化タングステン）の雰囲気中に置き、テスター
等で抵抗体の抵抗値を測定し、レーザー光線でＷＦ6 を
熱分解しＷ膜を抵抗体表面に堆積させる。レーザー光線
を任意に移動させることにより堆積する面積を変動させ
て、抵抗値が希望する値になった時にレーザー光線の照
射を止めることにより、各ＩＣ，ＬＳＩの抵抗値を希望
する値にすることができる。The silicon substrate on which the resistor is formed is WF 6
It is placed in an atmosphere of (tungsten hexafluoride), the resistance value of the resistor is measured by a tester or the like, and WF 6 is thermally decomposed by a laser beam to deposit a W film on the resistor surface. The resistance value of each IC or LSI can be set to a desired value by changing the deposition area by arbitrarily moving the laser beam and stopping the irradiation of the laser beam when the resistance value reaches a desired value. .
【０００６】[0006]
【実施例】次に本発明について図面を参照して説明す
る。図１は本発明の一実施例を説明するためのブロック
図である。The present invention will be described below with reference to the drawings. FIG. 1 is a block diagram for explaining an embodiment of the present invention.
【０００７】単結晶のシリコン基板４上に多結晶シリコ
ン膜からなる抵抗体１を設け、その両端に電極２を形成
する。次で、このシリコン基板４をＷＦ6 雰囲気中にセ
ットし、電極２に測定針５を接触させ、テスター６で多
結晶シリコンの抵抗体１の抵抗値を測定する。次でレー
ザ発振器７より、例えば２００μＪ／パルス，パルス幅
１７ｓｅｃで波長５３２ｎｍのレーザー光８を抵抗体１
上に照射して雰囲気中のＷＦ6 を熱分解し、抵抗体１の
上にＷ膜３を堆積させる。A resistor 1 made of a polycrystalline silicon film is provided on a single crystal silicon substrate 4, and electrodes 2 are formed on both ends thereof. Next, the silicon substrate 4 is set in a WF 6 atmosphere, the measuring needle 5 is brought into contact with the electrode 2, and the resistance value of the polycrystalline silicon resistor 1 is measured by the tester 6. Next, a laser beam 8 having a wavelength of 532 nm with a pulse width of 17 sec, for example, 200 μJ / pulse is emitted from the laser oscillator 7.
By irradiating the WF 6 to the upper side to thermally decompose WF 6 in the atmosphere, the W film 3 is deposited on the resistor 1.
【０００８】レーザー光８を右から左へ移動させ、Ｗ膜
３を抵抗体面にそって堆積させることにより、抵抗体１
の抵抗値を所望の値にすることができる。By moving the laser beam 8 from right to left and depositing the W film 3 along the resistor surface, the resistor 1 is formed.
The resistance value of can be set to a desired value.
【０００９】[0009]
【発明の効果】以上説明したように本発明は、抵抗体の
抵抗値を測定しながら抵抗体上にレーザ光の照射により
Ｗ膜を堆積させることによって、抵抗体の抵抗値を希望
する抵抗値に変更することができる。このため、各ＩＣ
やＬＳＩ間の抵抗値のばらつきを小さくできるため、半
導体装置の特性のばらつきを小さくすることができる。
従って良品率が向上するため、原価を低減させることが
できるという効果を有する。As described above, according to the present invention, the resistance value of the resistor is set to a desired resistance value by measuring the resistance value of the resistor and depositing the W film on the resistor by irradiating the laser beam. Can be changed to Therefore, each IC
Since variations in resistance value between LSIs and LSIs can be reduced, variations in characteristics of semiconductor devices can be reduced.
Therefore, the non-defective rate is improved, and the cost can be reduced.
【図１】本発明の一実施例を説明するためのブロック
図。FIG. 1 is a block diagram for explaining an embodiment of the present invention.
１ 抵抗体 ２ 電極 ３ Ｗ膜 ４ シリコン基板 ５ 測定針 ６ テスター ７ レーザー発振器 ８ レーザー光 1 Resistor 2 Electrode 3 W Film 4 Silicon Substrate 5 Measuring Needle 6 Tester 7 Laser Oscillator 8 Laser Light
Claims (1)
る抵抗体を形成する工程と、ＷＦ6 雰囲気中で前記抵抗
体の抵抗値を測定すると共にこの抵抗体上にレーザ光を
照射して金属膜を堆積する工程とを含むことを特徴とす
る半導体装置の製造方法。1. A step of forming a resistor made of a polycrystalline silicon film on a semiconductor substrate, a step of measuring the resistance value of the resistor in a WF 6 atmosphere, and irradiating the resistor with laser light. And a step of depositing a film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4001692A JPH05243496A (en) | 1992-02-27 | 1992-02-27 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4001692A JPH05243496A (en) | 1992-02-27 | 1992-02-27 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05243496A true JPH05243496A (en) | 1993-09-21 |
Family
ID=12569114
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4001692A Pending JPH05243496A (en) | 1992-02-27 | 1992-02-27 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05243496A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63164354A (en) * | 1986-12-26 | 1988-07-07 | Matsushita Electric Ind Co Ltd | Method of trimming resistor |
| JPH0257685A (en) * | 1988-08-22 | 1990-02-27 | Oki Electric Ind Co Ltd | Formation of tungsten film |
| JPH02178930A (en) * | 1988-12-29 | 1990-07-11 | Matsushita Electric Ind Co Ltd | Formation of wiring |
-
1992
- 1992-02-27 JP JP4001692A patent/JPH05243496A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63164354A (en) * | 1986-12-26 | 1988-07-07 | Matsushita Electric Ind Co Ltd | Method of trimming resistor |
| JPH0257685A (en) * | 1988-08-22 | 1990-02-27 | Oki Electric Ind Co Ltd | Formation of tungsten film |
| JPH02178930A (en) * | 1988-12-29 | 1990-07-11 | Matsushita Electric Ind Co Ltd | Formation of wiring |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 19980616 |