JPH0523375B2 - - Google Patents
Info
- Publication number
- JPH0523375B2 JPH0523375B2 JP60069552A JP6955285A JPH0523375B2 JP H0523375 B2 JPH0523375 B2 JP H0523375B2 JP 60069552 A JP60069552 A JP 60069552A JP 6955285 A JP6955285 A JP 6955285A JP H0523375 B2 JPH0523375 B2 JP H0523375B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- temperature
- wafer
- heat treatment
- treatment furnace
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000010438 heat treatment Methods 0.000 claims description 70
- 239000004065 semiconductor Substances 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 26
- 238000002834 transmittance Methods 0.000 claims description 16
- 230000004397 blinking Effects 0.000 claims description 6
- 238000001514 detection method Methods 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 68
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 18
- 229910052710 silicon Inorganic materials 0.000 description 18
- 239000010703 silicon Substances 0.000 description 18
- 239000013307 optical fiber Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 10
- 230000010355 oscillation Effects 0.000 description 8
- 238000010521 absorption reaction Methods 0.000 description 7
- 238000009529 body temperature measurement Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 230000000737 periodic effect Effects 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 230000001360 synchronised effect Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
- Radiation Pyrometers (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6955285A JPS61228637A (ja) | 1985-04-01 | 1985-04-01 | 温度測定装置を付設した加熱装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6955285A JPS61228637A (ja) | 1985-04-01 | 1985-04-01 | 温度測定装置を付設した加熱装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61228637A JPS61228637A (ja) | 1986-10-11 |
JPH0523375B2 true JPH0523375B2 (ru) | 1993-04-02 |
Family
ID=13406005
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6955285A Granted JPS61228637A (ja) | 1985-04-01 | 1985-04-01 | 温度測定装置を付設した加熱装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61228637A (ru) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4890933A (en) * | 1988-02-17 | 1990-01-02 | Itt Corporation | Transmission method to determine and control the temperature of wafers or thin layers with special application to semiconductors |
KR20020029453A (ko) * | 2000-10-13 | 2002-04-19 | 조길천 | 비접촉식 반도체 표면 온도 측정장치 |
DE102007042779B4 (de) * | 2007-09-07 | 2009-07-09 | Mattson Thermal Products Gmbh | Kalibrationssubstrat und -verfahren |
KR100997305B1 (ko) | 2008-06-26 | 2010-11-29 | 현대제철 주식회사 | 철광석의 적하온도 계측방법 및 그 장치 |
JP5255534B2 (ja) * | 2009-08-06 | 2013-08-07 | 株式会社アドバンテスト | 温度検出装置、ハンドラ装置、試験装置 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59222730A (ja) * | 1983-06-02 | 1984-12-14 | Toshiba Corp | 光学的温度測定装置 |
-
1985
- 1985-04-01 JP JP6955285A patent/JPS61228637A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59222730A (ja) * | 1983-06-02 | 1984-12-14 | Toshiba Corp | 光学的温度測定装置 |
Also Published As
Publication number | Publication date |
---|---|
JPS61228637A (ja) | 1986-10-11 |
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