JPH0523079B2 - - Google Patents

Description

[Detailed description of the invention]

(Industrial Application Field) The present invention relates to a method for manufacturing a multilayer ceramic substrate, particularly a highly thermally conductive multilayer ceramic substrate using titanium nitride as a conductor. (Prior art and its problems) With the dramatic progress of the semiconductor industry, ICs and LSIs have come to be widely used for industrial and consumer purposes, and electronic devices are becoming smaller, more dense, and more sophisticated. is in progress. In particular, multilayer ceramic substrates are attracting attention as high-density mounting substrates for high-speed operation LSIs with high integration density are essential. This multilayer ceramic substrate can be used to directly mount LSIs, and it is also possible to perform fine wiring in multiple layers. Generally, alumina is mainly used as the material for ceramic substrates, but in recent years electronic devices have become smaller and higher circuit densities are required, and the degree of integration of elements and circuit elements per unit area of the substrate has increased. It's getting higher and higher. On the other hand, LSI chips tend to generate more heat as they operate at higher speeds. As a result, the heat generated by the board increases significantly, and the alumina board is unable to dissipate heat sufficiently, causing a problem in that the board temperature rises and adversely affects the LSI chip and mounted elements. Therefore, an insulating substrate that has higher thermal conductivity and better heat dissipation than an alumina substrate has become necessary. Therefore, a ceramic substrate containing silicon carbide as its main component was developed, and it has excellent heat dissipation properties. Silicon carbide itself electrically belongs to a semiconductor, has a specific resistance of about 1 to 10 Ω·cm, and has poor electrical insulation properties, so it is problematic to use as an insulating substrate. Furthermore, since silicon carbide has a high melting point and is very difficult to sinter, it is usually produced by the so-called hot press method in which a small amount of sintering additive is added and pressed under high pressure. When beryllium oxide or boron nitride is used as a sintering additive, it is effective not only for the sintering effect but also for electrical insulation.
The specific resistance of the sintered substrate mainly composed of silicon carbide is 10 ¹⁰ Ωcm.
That's all. However, in mounting boards such as LSI,
The dielectric constant, which is one of the important factors, is quite high at 40 at a frequency of 1 MHz, and even with the addition of additives, the dielectric constant at the particle interface rapidly decreases as the voltage increases, so the withstand voltage is low. There are also problems with. Further, from a process standpoint, a hot press method must be applied, which not only increases the size of the apparatus, but also makes it difficult to increase the shape of the substrate, and there are many problems with surface smoothness. On the other hand, a multilayer ceramic substrate is a mounting substrate that is expected to be used for higher density. This uses ceramic green sheets, and has various conductor patterns formed in layers within the substrate, and the layers are electrically connected via through holes. The material of the multilayer ceramic substrate is as follows:
Alumina, glass ceramics, etc. are currently being developed, but silicon carbide materials using hot pressing are extremely difficult to process. In general, the main properties that a high-density mounting board should have are (1) low dielectric constant in terms of electrical properties;
Low dielectric loss and excellent electrical insulation, (2) sufficient mechanical strength, (3) high thermal conductivity, and (4) thermal expansion coefficient close to that of silicon chips. , (5) excellent surface smoothness, and (6) easy densification. The various ceramic substrates described above are by no means sufficient in terms of these substrate properties in general. The inventors of the present invention focused on high thermal conductivity and high multi-layer density while keeping these substrate properties in mind, using aluminum nitride-based powder that can be sintered by normal pressure method, and sintering at high temperature. This led to the invention of a method for manufacturing a highly thermally conductive multilayer ceramic wiring board using titanium nitride as a conductor. (Object of the Invention) An object of the present invention is to provide a manufacturing method for obtaining a high-density, high-thermal conductive multilayer ceramic wiring board with excellent thermal conductivity by eliminating the drawbacks of the conventional mounting board described above. (Structure of the Invention) According to the present invention, a conductor is formed by using a paste mainly composed of titanium nitride on a green sheet made of a mixed powder made of aluminum nitride powder and a sintering additive, and a mixture of an organic binder and an organic solvent. A high-temperature method characterized by comprising a step of embedding conductors in layers and through-holes, a step of laminating and thermocompression bonding each green sheet on which a conductor has been formed, and a step of debinding and firing in a non-oxidizing atmosphere. A method for manufacturing a conductive multilayer ceramic substrate is obtained. (Detailed Description of Configuration) The present invention solves the problems of the prior art by adopting the above-described configuration. First, aluminum nitride, which has high thermal conductivity, was used as the insulating ceramic material constituting the multilayer ceramic substrate, and a sintering additive was added to improve sinterability. After firing, this material forms a dense structure of polycrystalline aluminum nitride. In the process of mixing with an organic binder and making a slurry, an organic substance that is easily decomposed in a non-oxidizing atmosphere was used so that binder removal could occur considerably in a non-oxidizing atmosphere. In the film forming process, a thin, uniformly thick green sheet is formed. Next, in the process of forming through-holes that provide interlayer conduction, extremely fine through-holes are basically formed using a mechanical method, and conductor formation is performed using a large number of conductors such as power supply layers, ground layers, and fine signal lines. At the same time as forming the layers, conductors are also filled into the through holes. In the lamination thermocompression bonding process, it is possible to obtain a raw laminated substrate in which fine patterns are stacked and integrated with high precision. After appropriately removing organic matter from the green laminated substrate in a non-oxidizing atmosphere, it is baked at a high temperature. In the highly thermally conductive multilayer ceramic substrate manufactured in this way, a plurality of power layers, ground layers, fine signal lines, etc. are formed on the ceramic layer made of aluminum nitride, and these conductor layers are connected to the ceramic layer. It has a structure in which it is electrically connected via a through hole provided inside. Therefore, the wiring density of the mounting board is greatly increased, and the heat generated from elements such as LSI is reduced.
It becomes possible to efficiently dissipate to the outside. (Example) Examples of the present invention will be described in detail below with reference to the drawings. First, high-purity aluminum nitride fine powder and sintering additive powder are weighed. Sintering additives used here include Ca, Sr, Ba, Na, K, Rb, Cs, Cu,
It consists of at least one kind of acetylide compound and oxide such as Ag, Mg, Cd, Hg, Zn, Al, Ce, etc., and the amount of sintering additive is 0.1wt% to 10wt%.
Weighed within the range of The weighed powders were wet mixed using an organic solvent in a ball mill. This thoroughly mixed powder was mixed with an organic binder such as polymethacrylate, polyacrylate, polycaprolactone, or polyvinyl butyral and an organic solvent using a stirrer such as a homomixer to form a slurry. The appropriate viscosity of the slurry at this time is in the range of 3000 to 7000 cp. If the viscosity is less than 1000 cp, repellency will occur due to surface tension on the organic film during the film forming process.
If it is more than 10,000 cp, it will be very difficult for the mud to pass through the mesh when filtering out foreign substances contained in the mud, and it will be difficult to pass through the mesh during the defoaming process to remove gas from the mud. Gas cannot escape sufficiently, resulting in poor film-forming properties. Next, the slurry adjusted to an appropriate viscosity is coated on a polyester organic film using a casting method.
A sheet is formed to have a uniform thickness of about 10 μm to 200 μm. This thin green sheet is peeled off from the organic film, and as shown in Figure 1a and b, through holes 1 are made to electrically connect each layer.
form. Here, Figure 1 a is a plan view, Figure 1 b
is a sectional view. The through holes were formed mechanically using a punch and die, but they can also be formed by other methods such as laser processing. Through-holes formed by mechanical methods could have a minimum diameter of about 70 μm. As shown in FIGS. 2a and 2b, a predetermined conductor pattern 2 is thick-film printed onto the green sheet in which through-holes have been formed at predetermined positions using a screen printing method using conductor paste. As the conductor used here, it is necessary to use a high melting point metal because the ceramic substrate must be sintered at a high temperature of 1500°C or higher. In the present invention, a conductor paste using titanium nitride powder was used as a conductor material to form titanium nitride after sintering. Titanium nitride has a cubic crystal structure and exhibits a low electrical resistance of 22×10 ^-6 Ω·cm. Therefore, even when a thick film was formed as a conductor paste, it exhibited a sufficiently low resistance value as a wiring conductor, even if it did not exhibit the original electrical resistance value of titanium nitride. In this printing process,
It includes the step of embedding a similar conductive paste into through holes for making electrical connections between layers. As shown in FIG. 3, a desired number of green sheets having each pattern printed and embedded with conductors were laminated and thermocompression bonded. FIG. 3 shows a sectional view of a green laminate having a structure in which a large number of insulating green sheets 3 on which conductive patterns 2 are formed are stacked. The number of stacked green sheets is 10 to 50. Thermocompression bonding conditions are temperature 70℃~110℃
The pressure in °C was 200-300 Kg/ ^cm2 . The process is
Each green sheet, on which wiring patterns and through holes are minutely formed, must be laminated with high precision without misalignment. Next, the stacked and integrated raw substrates are debindered in a nitrogen atmosphere, and then sintered at a high temperature. FIG. 4 shows an example of the temperature profile of binder removal and firing. Until the binder removal process is completed, the temperature increase speed is slowed down and the temperature is maintained in the range of 400 to 500°C for a certain period of time. In this debinding step, the removal of organic matter was appropriately controlled. This is because the residue greatly affects the sinterability and properties of the aluminum nitride sintered body. Continue to raise the temperature to 1500℃~2000℃,
Sintering was carried out by holding at the maximum temperature for 2 hours. Fourth
The figure shows an example where the holding temperature for binder removal is 500°C and the sintering temperature is 1800°C. The atmosphere during this series of steps was controlled using nitriding gas. Further, sintering was performed under normal pressure. If the temperature increase speed during binder removal is too fast,
The rapid decomposition and transpiration of organic matter causes defects such as cracks and delamination. FIG. 5 shows a schematic perspective cross-sectional view of a highly thermally conductive multilayer ceramic substrate made of aluminum nitride as a main component, prepared in this way. Reference numeral 11 denotes an insulating ceramic layer, which is mainly composed of polycrystalline aluminum nitride. Reference numeral 12 denotes a conductor layer for signal lines, power supplies, etc., which uses titanium nitride conductor paste to form a titanium nitride polycrystalline body after firing, and connects each layer through through holes 13 formed in the insulating ceramic layer. are electrically connected. A die pad 14 and a bonding pad 15 are formed on the multilayer ceramic substrate constructed in this way so that an LSI chip can be mounted, and a die pad 14 and a bonding pad 15 are formed to take out a signal from the mounting board or input a signal into the board. I/O pad 16
is formed on the back side of the board. Heat generated from the LSI chip mounted on the substrate is diffused into the ceramic substrate via the die pad 14. As a result of measuring the electrical properties of this sintered substrate, the specific resistance was 10 ¹¹ Ω・cm or more, and the dielectric constant was 8.7 (1M
Hz), and the dielectric loss was small, less than 10 ^-3 (1MHz). It was found that the electrical characteristics were comparable to those of conventional boards, and were sufficient to be used as a mounting board. Table 1 shows substrate properties and various characteristics of an example of a multilayer ceramic substrate produced by the manufacturing method of the present invention.

[Table] In this example, CaC ₂ was used as the sintering additive, and the amount added is shown in the table when the weight of aluminum nitride is taken as 100. As can be seen from the table, a substrate was obtained in which fine wiring patterns and through holes were formed, extremely high bending strength, and extremely high thermal conductivity. Furthermore, its coefficient of thermal expansion is close to that of silicon, making it extremely convenient for mounting LSIs and the like. On the other hand, as sintering additives other than _CaC2, Sr, Ba,
Na, K, Rb, Cs, Cu, Ag, Mg, Cd, Hg,
A multilayer ceramic substrate made of aluminum nitride doped with acetylide compounds of Zn, Al, and Ce and their oxides including Ca was fabricated. The same manufacturing method was used with the firing temperature ranging from 1500°C to 2000°C. As a result, the thermal conductivity of the created substrate can achieve a value of 100W/mk or more when the additive amount is from 0.5wt% to 2.0wt%, and a value of 80W/mk or more from 0.3wt% to 8.0wt%. was obtained, and had superior heat dissipation properties compared to alumina substrates. (Effects of the Invention) As is clear from the examples, high-density circuits can be easily formed by employing the manufacturing method of the present invention, and the high thermal conductivity of the ceramic substrate improves heat dissipation. A highly thermally conductive multilayer ceramic wiring board is obtained which is also very effective for. The thermal conductivity of conventionally used alumina substrates is about 17 W/mk, and it can be seen that the thermal conductivity of the substrate according to the method of the present invention is at a very high level.
Also, in terms of thermal expansion coefficient, the alumina substrate has a coefficient of 65×
10 ^-7 /°C, whereas the substrate produced by the method of the present invention has a smaller coefficient of thermal expansion, which is closer to that of a silicon chip, and is advantageous in this respect as well. On the other hand, in the titanium nitride conductor paste used in the present invention, the conductor resistance after sintering showed sufficient characteristics for the mounting board.

[Brief explanation of the drawing]

1 to 3 are diagrams showing each manufacturing process of a highly thermally conductive multilayer ceramic substrate according to an embodiment of the present invention,
FIG. 4 is a diagram showing a firing profile in the firing process of the example, and FIG. 5 is a schematic perspective view of a completed substrate. 1...Through hole, 2...Conductor, 3...Insulator green sheet, 11...Insulating ceramic layer,
12... Conductor layer, 13... Through hole, 14...
...Die pad, 15...Bonding pad, 1
6...I/O pad.

Claims (1)

[Claims] 1. In a method for manufacturing a multilayer ceramic substrate in which the ceramic layer is a polycrystalline body mainly composed of aluminum nitride and the conductor is composed mainly of titanium nitride, a mixed powder consisting of aluminum nitride powder and a sintering additive is used. , a process of forming a conductor layer on a green sheet made of a mixture of an organic binder and an organic solvent using a conductor paste mainly composed of titanium nitride and embedding the conductor in the through holes, and laminating the green sheets with conductors formed thereon. A method for producing a highly thermally conductive multilayer ceramic wiring board, comprising the steps of thermocompression bonding, and removing the binder and firing in a non-oxidizing atmosphere.