JPH0522678B2 - - Google Patents
Info
- Publication number
- JPH0522678B2 JPH0522678B2 JP59221985A JP22198584A JPH0522678B2 JP H0522678 B2 JPH0522678 B2 JP H0522678B2 JP 59221985 A JP59221985 A JP 59221985A JP 22198584 A JP22198584 A JP 22198584A JP H0522678 B2 JPH0522678 B2 JP H0522678B2
- Authority
- JP
- Japan
- Prior art keywords
- carbon
- containing composition
- heating
- whiskers
- silicon carbide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/005—Growth of whiskers or needles
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59221985A JPS61101500A (ja) | 1984-10-24 | 1984-10-24 | 炭化ケイ素ウイスカ−の製造法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59221985A JPS61101500A (ja) | 1984-10-24 | 1984-10-24 | 炭化ケイ素ウイスカ−の製造法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61101500A JPS61101500A (ja) | 1986-05-20 |
JPH0522678B2 true JPH0522678B2 (enrdf_load_stackoverflow) | 1993-03-30 |
Family
ID=16775264
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59221985A Granted JPS61101500A (ja) | 1984-10-24 | 1984-10-24 | 炭化ケイ素ウイスカ−の製造法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61101500A (enrdf_load_stackoverflow) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0323300A (ja) * | 1989-06-17 | 1991-01-31 | Toshiba Ceramics Co Ltd | 炭化ケイ素ウイスカーの製造方法 |
US5039501A (en) * | 1990-04-12 | 1991-08-13 | General Motors Corporation | Method for growing silicon carbide whiskers |
-
1984
- 1984-10-24 JP JP59221985A patent/JPS61101500A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS61101500A (ja) | 1986-05-20 |
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