JPH05226440A - Semiconductor integrated circuit device - Google Patents

Abstract

PURPOSE:To make it possible to shorten a time for a screen test, which is conducted in the final process for manufacturing a semiconductor integrated circuit device, by a method wherein a temperature sensor for detecting an ambient temperature and a heater for warming a semiconductor chip are provided in a package main body. CONSTITUTION:A temperature detecting means (a temperature sensor) 6 and a heating means (a heater) 7 are installed in the interior of a package main body 2 constituting a semiconductor integrated circuit device 1. The sensor 6 is a means for detecting an ambient temperature and is, for instance, installed on the side of the main surface of a semiconductor chip 3. The heater 7 is a means for warming the chip 3 on the basis of information on the ambient temperature detected by the sensor 6 and is, for instance, installed on the side of the rear of the chip 3. Accordingly, as the chip 3 can be always put in an environment of a prescribed temperature or higher, a characteristic test process in a low-temperature atmosphere, which is one process of screening test processes, can be omitted. Thereby, the simplification of a screening test becomes possible.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor integrated circuit device technology, and more particularly to a technology effectively applied to a semiconductor integrated circuit device having a large package structure with a high degree of element integration.

[0002]

2. Description of the Related Art In the final manufacturing process of a semiconductor integrated circuit device, a screening test is required to inspect the quality and grade of the semiconductor integrated circuit device. In the test, a tester and a handling device are usually used. It is common to use it to test all semiconductor integrated circuit devices.

In the selection test, it is common to perform an operation guarantee test at room temperature (for example, 25 ° C.) and an operation guarantee test at low temperature (for example, −5 ° C. to −50 ° C.), depending on the type of measurement temperature. The same semiconductor integrated circuit device is measured a plurality of times by using a plurality of corresponding handling devices.

The reliability test of the semiconductor integrated circuit device after the packaging process is described, for example, in "LSI Handbook" P681 to P684, published by Ohmsha Co., Ltd., November 30, 1984.

[0005]

However, the inventor of the present invention has found that the above-mentioned conventional screening test technique has the following problems.

That is, as the degree of integration of elements in the semiconductor integrated circuit device is improved, the number of test items is increased and the test time is lengthened.

Further, in the case of a characteristic test in a low temperature atmosphere, the test is difficult because of the formation of a low temperature atmosphere of, for example, about -5 ° C to -50 ° C, and the deterioration of the test equipment is severe. There was a problem that the test time was long due to thawing.

The present invention has been made in view of the above problems, and an object of the present invention is to provide a technique capable of shortening the time of a screening test performed in the final step of a semiconductor integrated circuit device.

Another object of the present invention is to provide a technique capable of simplifying a selection test performed in the final process of a semiconductor integrated circuit device.

The above and other objects and novel features of the present invention will be apparent from the description of the specification and the accompanying drawings.

[0011]

Among the inventions disclosed in the present application, a brief description will be given to the outline of typical ones.
It is as follows.

That is, the invention according to claim 1 is sealed in the package body based on the temperature detection means for detecting the ambient temperature in or near the package body and the information detected by the temperature detection means. The semiconductor integrated circuit device structure is provided with heating means for heating the semiconductor chip.

[0013]

According to the invention described in claim 1, when the temperature detecting means detects that the ambient temperature has become equal to or lower than the predetermined temperature, the semiconductor chip is warmed by the heating means installed in the vicinity thereof. As a result, the semiconductor chip can always be kept in an environment of a predetermined temperature or higher, so that the characteristic test process under a low temperature atmosphere, which is one of the selection test process, can be omitted.

[0014]

1 is an explanatory view for explaining the structure of a semiconductor integrated circuit device according to an embodiment of the present invention, and FIG. 2 is a circuit diagram of a temperature detecting means and a heating means portion in the semiconductor integrated circuit device of FIG. Is.

The semiconductor integrated circuit device 1 of this embodiment shown in FIG. 1 is, for example, a DIP (Dual Inline Package). The package body 2 constituting the semiconductor integrated circuit device 1 is made of resin such as epoxy resin.

A semiconductor chip 3 is sealed inside the package body 2. The back surface of the semiconductor chip 3 is adhered to the chip mounting base 4a of the lead frame 4 with an adhesive such as an epoxy resin containing Ag.

The semiconductor chip 3 is made of, for example, silicon (S
i) It is made of a single crystal and has, for example, an SRAM on its main surface.
Semiconductor integrated circuit (not shown) such as (Static RAM)
Are formed.

The electrodes of the semiconductor integrated circuit are electrically connected to the inner leads 4b of the lead frame 4 through the bonding wires 5 made of gold (Au) or the like. The inner lead 4b is formed integrally with the outer lead 4c, whereby the semiconductor chip 3
The electrode of the semiconductor integrated circuit inside is drawn out to the outside.

The lead frame 4 is made of 42 alloy, for example.

In this embodiment, a temperature sensor (temperature detecting means) 6 and a heater (heating means) 7 are installed inside the package body 2.

The temperature sensor 6 is a means for detecting the ambient temperature and is installed, for example, on the main surface side of the semiconductor chip 3. In the present embodiment, the temperature sensor 6 is made of, for example, bimetal, and is set so that the switch is closed to be in the ON state when the ambient temperature becomes equal to or lower than a predetermined temperature (for example, 0 ° C.).

The heater 7 is means for warming the semiconductor chip 3 based on the temperature information detected by the temperature sensor 6, and is installed on the back surface side of the semiconductor chip 7, for example. The heater 7 is composed of a resistor or the like.

FIG. 2 shows a circuit connection state between the temperature sensor 6 and the heater 7. The DC power supply 8 is a power supply used to drive the semiconductor integrated circuit device 1, and is set so as to be able to supply a power supply voltage of, for example, about 5V. The temperature sensor 6 and the heater 7 are connected in series between the positive and negative electrodes of the DC power supply 8.

The capacitor C connected in parallel with the temperature sensor 6 is a capacitor for absorbing noise generated at the moment when the switch of the temperature sensor 6 is turned on.

As can be seen from the circuit connection state, in this embodiment, when the switch of the temperature sensor 6 is closed and turned on, a current flows through the heater 7 and the heater 7 is heated.

That is, in the semiconductor integrated circuit device 1 of this embodiment, when the ambient temperature becomes lower than a predetermined temperature (for example, 0 ° C.), the switch of the temperature sensor 6 is turned on, and as a result, a current flows through the heater 7 and the heater 7 Generates heat and the semiconductor chip 3
It has a structure that heats the.

Therefore, the following effects can be obtained in this embodiment.

(1) Since the semiconductor chip 3 can always be kept in an environment of a predetermined temperature or higher, the characteristic test under a low temperature atmosphere in the screening test of the semiconductor integrated circuit device 1 can be omitted.

(2). According to the above (1), the screening test can be simplified.

(3) By the above (1), the test items in the screening test can be reduced, so that the test time can be shortened and the throughput can be improved.

(4). Due to the above (1), it is possible to reduce the equipment cost and the test cost for the screening test.

(5) Since the characteristic test in the low temperature atmosphere is eliminated by the above (1), the semiconductor integrated circuit device 1 originally determined to be defective in the test is also a good product. Therefore, the yield of the semiconductor integrated circuit device 1 can be improved.

Although the invention made by the present inventor has been specifically described based on the embodiments, the present invention is not limited to the embodiments and various modifications can be made without departing from the scope of the invention. Needless to say.

For example, in the above-mentioned embodiment, the case where the heating means is installed on the back surface side of the semiconductor chip has been described. However, the present invention is not limited to this, and various modifications can be made. You may install on the side or the side.

In the above embodiment, the case where the heating means is installed outside the semiconductor chip has been described, but the present invention is not limited to this, and the heating means may be installed inside the semiconductor chip, for example. ..

Further, in the above embodiment, the case where the package body is of the resin-sealed type has been described, but the present invention is not limited to this, and the package body may be of the hermetically sealed type, for example. Further, it is not limited to DIP, and various modifications are possible, such as QFP (Quad Fla
t Package) and SOJ (Small Outline J-Lead Package)
And so on.

In the above description, SRA, which is the field of application behind the invention made mainly by the present inventor, is the background.
The case where the present invention is applied to the semiconductor integrated circuit device having M has been described, but the present invention is not limited to this and various applications are possible. For example, another semiconductor integrated circuit device such as a semiconductor integrated circuit device having a DRAM (Dynamic RAM) or a logic circuit. It is also possible to apply to.

[0038]

The effects obtained by the typical ones of the inventions disclosed in the present application will be briefly described as follows.
It is as follows.

That is, according to the invention of claim 1,
When it is detected by the temperature detecting means that the ambient temperature has reached the predetermined temperature, the semiconductor chip can be kept in an environment above the predetermined temperature by warming the semiconductor chip by the heating means installed in the vicinity thereof. Therefore, it is possible to omit the characteristic test step in the low temperature atmosphere, which is one step of the selection test step. Therefore, the screening test can be simplified.

Further, since the test items in the selection test can be reduced, the test time can be shortened and the throughput can be improved.

Furthermore, even if the operating temperature range is widened, the semiconductor chip can be provided with a temperature margin (low temperature side).

[Brief description of drawings]

FIG. 1 is an explanatory diagram illustrating a structure of a semiconductor integrated circuit device that is an embodiment of the present invention.

2 is a circuit diagram of a temperature detecting means and a heating means portion in the semiconductor integrated circuit device of FIG.

[Explanation of symbols]

 1 semiconductor integrated circuit device 2 package body 3 semiconductor chip 4 lead frame 4a chip mounting base 4b inner lead 4c outer lead 5 bonding wire 6 temperature sensor (temperature detecting means) 7 heater (heating means) 8 DC power supply C capacitor

Claims (2)

[Claims] 1. A temperature detecting means for detecting an ambient temperature in or near the package body, and a heating means for heating a semiconductor chip sealed in the package body on the basis of information detected by the temperature detecting means. A semiconductor integrated circuit device provided. 2. The semiconductor integrated circuit device according to claim 1, wherein the temperature detecting means is a bimetal.