JPH05222526A - Sputtering target for transparent conductive film consisting of ito and production thereof - Google Patents
Sputtering target for transparent conductive film consisting of ito and production thereofInfo
- Publication number
- JPH05222526A JPH05222526A JP4056771A JP5677192A JPH05222526A JP H05222526 A JPH05222526 A JP H05222526A JP 4056771 A JP4056771 A JP 4056771A JP 5677192 A JP5677192 A JP 5677192A JP H05222526 A JPH05222526 A JP H05222526A
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- Japan
- Prior art keywords
- target
- sno
- transparent conductive
- conductive film
- ito
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Physical Vapour Deposition (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、液晶表示素子などに用
いられるＩＴＯ透明導電膜をスパッタリング法で形成す
る際に用いるＩＴＯ透明導電膜用スパッタリングターゲ
ットとその製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputtering target for an ITO transparent conductive film used when forming an ITO transparent conductive film used for a liquid crystal display device or the like by a sputtering method and a method for producing the same.
【０００２】[0002]
【従来の技術】ＩＴＯ透明導電膜を成形する方法とし
て、従来、スパッタリング法、真空蒸着法、噴霧熱分解
法、ＣＶＤ法などがあるが、大面積でかつ低抵抗な膜を
得る方法としてはスパッタリング法が適しており、広く
採用されている。2. Description of the Related Art Conventional methods for forming an ITO transparent conductive film include a sputtering method, a vacuum vapor deposition method, a spray pyrolysis method, a CVD method and the like. As a method for obtaining a large area and low resistance film, sputtering is used. The law is suitable and widely adopted.
【０００３】スパッタリング法でＩＴＯ透明導電膜を形
成する際、スパッタガスとしてアルゴン−酸素の混合ガ
スを用いる。酸素の割合は形成したＩＴＯ膜が透明でか
つ比抵抗が最低になるように決める。また、スパッタタ
ーゲットとして、従来、ITターゲットと一般的に呼ばれ
るIn-Sn 系合金ターゲット、あるいはＩＴＯターゲット
と一般的に呼ばれるIn2O3-SnO2系酸化物ターゲットが一
般的に用いられている。When forming an ITO transparent conductive film by a sputtering method, a mixed gas of argon and oxygen is used as a sputtering gas. The proportion of oxygen is determined so that the formed ITO film is transparent and has the minimum specific resistance. As the sputtering target, an In—Sn based alloy target generally called an IT target or an In 2 O 3 —SnO 2 based oxide target generally called an ITO target has been generally used.
【０００４】ITターゲットを用いた場合、その特徴とし
て、成膜速度が速く、生産性が高いという長所を有して
いるが、膜の比抵抗がスパッタガス中の酸素分圧の変化
に対して非常に敏感に変化するため、低抵抗の膜を安定
的に製造することは困難であった。The use of the IT target has the advantages that the film formation rate is high and the productivity is high, but the specific resistance of the film varies with the oxygen partial pressure in the sputtering gas. Since it changes very sensitively, it is difficult to stably manufacture a low resistance film.
【０００５】一方、ＩＴＯターゲットを用いた場合、IT
ターゲットに比べ、ターゲット中に酸素を多く含んでい
るため、スパッタガス中の酸素分圧の変化に対して変化
が少なく、酸素分圧により膜の比抵抗が制御し易く、低
抵抗の膜を安定的に製造できる。しかし、ここ数年の表
示素子の発達に伴い、さらに低抵抗を有するＩＴＯ膜が
求められており、スパッタリング中の酸素のコントロー
ルがさらに重要になってきている。On the other hand, when an ITO target is used, IT
Compared to the target, the target contains more oxygen, so there is less change with changes in the oxygen partial pressure in the sputtering gas, and the specific resistance of the film is easier to control by the oxygen partial pressure, and a low-resistance film is stable. Can be manufactured in a simple manner. However, with the development of display elements in the last few years, an ITO film having lower resistance has been required, and control of oxygen during sputtering has become more important.
【０００６】しかるに、従来のＩＴＯターゲットはIn2O
3-SnO2系の酸化物であり、SnO2の量にもよるが、酸素含
有量はほぼ１７重量％〜１８重量％に固定されており、
ターゲット中の酸素含有量のコントロールはできていな
かった。すなわち、現状のＩＴＯターゲットでは、低抵
抗の膜を形成するのに導入ガス中の酸素を非常に少ない
（ほとんど０）ところでスパッタリングする必要があ
り、コントロールは困難であった。However, the conventional ITO target is In 2 O.
It is a 3- SnO 2 type oxide, and the oxygen content is fixed at about 17 to 18% by weight, depending on the amount of SnO 2 .
The oxygen content in the target could not be controlled. That is, in the current ITO target, it was necessary to perform sputtering at a place where oxygen in the introduced gas was very small (almost 0) in order to form a low resistance film, which was difficult to control.
【０００７】[0007]
【発明が解決しようとする課題】本発明の目的は、従来
技術が有していた前述の欠点を解消しようとするもので
ある。つまり、スパッタリング法によってＩＴＯ(Indiu
m-Tin-Oxide)透明導電膜を形成する際に、In2O3 かつ／
またはSnO2を主成分とする酸化物と、Inかつ／またはSn
を主成分とする合金からなることを特徴とするスパッタ
リングターゲットを用いることにより、スパッタリング
中の酸素のコントロールを容易にし、低抵抗を有するＩ
ＴＯ膜を安定的に形成することを目的とするものであ
る。SUMMARY OF THE INVENTION An object of the present invention is to eliminate the above-mentioned drawbacks of the prior art. In other words, ITO (Indiu
m-Tin-Oxide) In 2 O 3 and / or
Or an oxide containing SnO 2 as a main component and In and / or Sn
By using a sputtering target characterized by comprising an alloy containing as a main component, it is possible to facilitate the control of oxygen during sputtering and to provide a low resistance I
The purpose is to stably form the TO film.
【０００８】[0008]
【課題を解決するための手段】即ち、本発明は、In2O
3 、SnO2、In2O3-SnO2複合酸化物の３種のうち少なくと
も１種と、In、Sn、In−Sn合金の３種のうち少なくとも
１種とからなることを特徴とするＩＴＯ透明導電膜用ス
パッタリングターゲットを提供するものである。That is, the present invention is based on In 2 O
ITO comprising at least one of three kinds of 3 , 3 , SnO 2 , and In 2 O 3 -SnO 2 composite oxide and at least one of three kinds of In, Sn, and In-Sn alloys. A sputtering target for a transparent conductive film is provided.
【０００９】本発明はまた、In2O3 、SnO2、In2O3-SnO2
複合酸化物の３種のうち少なくとも１種の粉末と、In、
Sn、In−Sn合金の３種のうち少なくとも１種の粉末とを
混合した粉末を、真空中あるいは非酸化性ガス雰囲気中
において、２００℃〜９００℃でホットプレスすること
を特徴とするＩＴＯ透明導電膜用スパッタリングターゲ
ットの製造方法を提供するものである。The present invention also relates to In 2 O 3 , SnO 2 , In 2 O 3 -SnO 2
At least one powder of three kinds of complex oxides, In,
An ITO transparent material characterized by hot-pressing a powder mixed with at least one of three kinds of Sn and In-Sn alloys at 200 ° C to 900 ° C in a vacuum or in a non-oxidizing gas atmosphere. A method for manufacturing a sputtering target for a conductive film is provided.
【００１０】本発明のターゲットは、In2O3 、SnO2、In
2O3-SnO2複合酸化物の３種のうち少なくとも１種と、I
n、Sn、In−Sn合金の３種のうち少なくとも１種からな
るものである。ドーパントであるSnは、Inに対し、固溶
した状態となっている方が、より低抵抗のＩＴＯ膜が得
られるため、In2O3 とSnO2を主成分とする酸化物と、In
−Snを主成分とする合金からなるものが好ましい。The targets of the present invention are In 2 O 3 , SnO 2 and In.
At least one of three types of 2 O 3 -SnO 2 composite oxides, and I
It is composed of at least one of n, Sn, and In-Sn alloy. Since Sn, which is a dopant, can form an ITO film having a lower resistance when it is in a solid solution state with respect to In, an oxide containing In 2 O 3 and SnO 2 as main components, and In
Those made of an alloy containing -Sn as a main component are preferable.
【００１１】また、ターゲット中のO(酸素) の含有率が
８重量％〜１７重量％であることが好ましい。酸素の含
有量が８重量％より少ないと、In-Sn 合金の割合が多く
なり、膜の比抵抗がスパッタガス中の酸素分圧の変化に
対して非常に敏感に変化するようになるため、低抵抗の
膜を安定的に製造することは困難であり好ましくない。
また、酸素の含有量が１７重量％より多いと、低抵抗の
膜を形成するのに導入ガス中の酸素を非常に少ない（ほ
とんど０）ところでスパッタリングする必要があり、コ
ントロールが困難であり好ましくない。Further, the content of O (oxygen) in the target is preferably 8% by weight to 17% by weight. If the oxygen content is less than 8% by weight, the proportion of In-Sn alloy increases and the resistivity of the film changes very sensitively to changes in the oxygen partial pressure in the sputtering gas. It is difficult and not preferable to stably produce a low-resistance film.
On the other hand, if the oxygen content is more than 17% by weight, it is necessary to perform sputtering at a very low oxygen content (nearly 0) in order to form a low resistance film, which is difficult to control and is not preferable. ..
【００１２】ターゲット中のSnの含有量としては、酸化
物と合金部分両方含めて、３重量％〜１５重量％含むよ
うに調製するが、３重量％未満および１５重量％を超え
ると膜の比抵抗が高くなり好ましくない。特に、好まし
い範囲は４重量％〜１０重量％である。The content of Sn in the target is adjusted so as to include 3 wt% to 15 wt% including both oxide and alloy parts. It is not preferable because the resistance becomes high. A particularly preferred range is 4% to 10% by weight.
【００１３】なお、本発明のターゲットには他の成分が
本発明の目的、効果を損なわない範囲において含まれて
いても差し支えないが可及的に少量にとどめることが望
ましい。The target of the present invention may contain other components within a range that does not impair the objects and effects of the present invention, but it is desirable to keep the amount as small as possible.
【００１４】本発明のＩＴＯ透明導電膜用スパッタリン
グターゲットの製造方法としては、In2O3 、SnO2、In2O
3-SnO2複合酸化物の３種のうち少なくとも１種の粉末
と、In、Sn、In−Sn合金の３種のうち少なくとも１種の
粉末とを混合した粉末を原料として使用する。上述のよ
うに、SnがInに固溶した状態の粉末を用いる方が、より
低抵抗の膜が得られるため、In2O3 とSnO2を主成分とす
る酸化物の粉末と、InとSnを主成分とする合金の粉末と
を混合した粉末を原料とするのがより好ましい。The method for producing the sputtering target for the ITO transparent conductive film of the present invention includes In 2 O 3 , SnO 2 and In 2 O.
A powder obtained by mixing at least one powder out of three kinds of 3- SnO 2 composite oxide and at least one powder out of three kinds of In, Sn, and In-Sn alloys is used as a raw material. As described above, using a powder in which Sn is a solid solution in In provides a film having a lower resistance. Therefore, an oxide powder containing In 2 O 3 and SnO 2 as main components, and In and It is more preferable to use a powder obtained by mixing powder of an alloy containing Sn as a main component.
【００１５】つぎに、所定量の原料粉末を秤量し、真空
中あるいは非酸化性ガス（例えば、アルゴンガス、窒素
ガス）雰囲気中で、２００℃〜９００℃でホットプレス
を行う。ホットプレスには、一般的にカーボン製の型を
用いる。このため、ホットプレスの雰囲気はカーボンと
反応して型を劣化させない真空中あるいは非酸化性ガス
（例えば、アルゴンガス、窒素ガス）であることが好ま
しい。また、真空中あるいは非酸化性ガス（例えば、ア
ルゴンガス、窒素ガス）雰囲気にすることにより、酸化
物の表面が還元され、そのまわりの金属とのなじみが良
くなり（即ち、酸化物中の酸素が、そのまわりの金属を
部分的に酸化し）、均一なターゲットが製造できる。Next, a predetermined amount of raw material powder is weighed and hot pressed at 200 ° C. to 900 ° C. in a vacuum or in a non-oxidizing gas (eg, argon gas, nitrogen gas) atmosphere. A carbon mold is generally used for the hot press. Therefore, the atmosphere of the hot press is preferably a vacuum or a non-oxidizing gas (eg, argon gas, nitrogen gas) that does not deteriorate the mold by reacting with carbon. In addition, the surface of the oxide is reduced in a vacuum or in an atmosphere of a non-oxidizing gas (for example, argon gas or nitrogen gas) to improve compatibility with the surrounding metal (that is, oxygen in the oxide). However, the metal around it is partially oxidized), and a uniform target can be manufactured.
【００１６】ホットプレス温度は２００℃〜９００℃で
行うのが好ましい。２００℃未満であると、酸化物の表
面の還元が充分でなく、好ましくない。一方、９００℃
を超えると型のカーボンによる酸化物の還元反応が激し
くなり、In-Sn 合金の溶融物が多量に生成し、その金属
が溶出するため望ましいターゲットの製造は困難になり
好ましくない。もちろん、この場合、カーボン型の劣化
も激しく、この点においても好ましくない。The hot pressing temperature is preferably 200 ° C to 900 ° C. If the temperature is lower than 200 ° C., the reduction of the oxide surface is not sufficient, which is not preferable. On the other hand, 900 ° C
If it exceeds, the reduction reaction of the oxide by the type carbon becomes vigorous, a large amount of melt of the In—Sn alloy is generated, and the metal is eluted, which makes it difficult to manufacture the desired target, which is not preferable. Of course, in this case, the carbon type is severely deteriorated, which is also unfavorable.
【００１７】[0017]
【作用】本発明のＩＴＯ透明導電膜用スパッタリングタ
ーゲットは、ターゲット中の酸素含有量をコントロール
できるので、スパッタリング中の導入ガス中の酸素分圧
の広い範囲で、厳密なコントロールをしなくても、充分
低抵抗を有するＩＴＯ膜を安定的に形成することができ
る。Since the sputtering target for ITO transparent conductive film of the present invention can control the oxygen content in the target, it is possible to control the oxygen partial pressure in the introduced gas during sputtering in a wide range without strict control. An ITO film having a sufficiently low resistance can be stably formed.
【００１８】[0018]
【実施例】高純度のIn2O3 粉末、SnO2粉末、In粉末およ
びSn粉末を準備し、まず、In2O3粉末とSnO2粉末を９０
重量％ In2O3−１０重量％SnO2の組成になるように混合
し、１５００℃×６０分の条件で仮焼し、室温に冷却
後、ボールミルを用いて解砕し、In2O3-SnO2粉末を調製
した。つぎに、調製したIn2O3-SnO2粉末とIn粉末および
Sn粉末を、７０重量％（In2O3-SnO2）−２７重量％In−
３重量％Snの割合で、ボールミルを用いて混合した。Example High-purity In 2 O 3 powder, SnO 2 powder, In powder, and Sn powder were prepared. First, 90 In 2 O 3 powder and SnO 2 powder were prepared.
Wt% In 2 O 3 −10 wt% SnO 2 was mixed, calcinated under the condition of 1500 ° C. × 60 minutes, cooled to room temperature, crushed with a ball mill, In 2 O 3 the -SnO 2 powder were prepared. Next, the prepared In 2 O 3 -SnO 2 powder and In powder and
Sn powder, 70 wt% (In 2 O 3 -SnO 2 ) -27 wt% In-
3% by weight Sn was mixed using a ball mill.
【００１９】そしてこの混合粉末をアルゴン中、ホット
プレス温度７００℃、保持時間３０分、プレス圧１００
kg/cm2でホットプレスし、直径１５０ｍｍ、厚さ５ｍｍ
の寸法の密度５．１g/cm3 を有するターゲットを作製し
た。ターゲットの組成は、In: ７９．１重量％、Sn：
８．５重量％、O （酸素）：１２．４重量％であった。Then, this mixed powder is heated in argon at a hot pressing temperature of 700 ° C., a holding time of 30 minutes and a pressing pressure of 100.
hot pressed at kg / cm 2, diameter 150 mm, thickness 5mm
A target with a density of 5.1 g / cm 3 of The composition of the target is In: 79.1% by weight, Sn:
It was 8.5% by weight and O (oxygen): 12.4% by weight.
【００２０】つぎに、このターゲットについて、マグネ
トロンスパッタリング装置を使用して、ＩＴＯ膜の成膜
を行った。このときの条件は投入電力：ＤＣ２００Ｗ、
圧力：５×１０-3Torr、基板温度：２００℃の条件であ
り、導入ガス（アルゴン−酸素）組成を変化させた時の
膜の比抵抗を測定した。Next, an ITO film was formed on this target by using a magnetron sputtering device. The conditions at this time are: input power: DC200W,
The pressure was 5 × 10 −3 Torr and the substrate temperature was 200 ° C. The specific resistance of the film was measured when the composition of the introduced gas (argon-oxygen) was changed.
【００２１】比較例として、従来のＩＴＯターゲット
（組成：９０重量％ In2O3−１０重量％SnO2）を用い、
同様の成膜、測定を行った。As a comparative example, a conventional ITO target (composition: 90 wt% In 2 O 3 -10 wt% SnO 2 ) was used,
The same film formation and measurement were performed.
【００２２】図１に、スパッタリングの導入ガスの酸素
の割合に対する膜の比抵抗を示す。比較例において、酸
素が０体積％のとき、最低の比抵抗となり、そのときの
値は２．０×１０-4Ωｃｍであった。FIG. 1 shows the specific resistance of the film with respect to the proportion of oxygen in the introduced gas for sputtering. In the comparative example, the minimum specific resistance was obtained when oxygen was 0% by volume, and the value at that time was 2.0 × 10 −4 Ωcm.
【００２３】これに対し、本発明のターゲットを用いた
場合、酸素がおよそ５．０体積％のとき、最低の比抵抗
となり、そのときの値は１．５×１０-4Ωｃｍであっ
た。本発明のターゲットを用いることにより、より低抵
抗を有するＩＴＯ膜を形成することができた。また、酸
素が約４〜７体積％という広い酸素分率範囲で、比較例
と同等以上の低抵抗の膜を形成できた。On the other hand, when the target of the present invention was used, the minimum specific resistance was obtained when oxygen was about 5.0% by volume, and the value at that time was 1.5 × 10 −4 Ωcm. By using the target of the present invention, an ITO film having lower resistance could be formed. Further, a low resistance film equivalent to or higher than that of the comparative example could be formed in a wide oxygen fraction range of about 4 to 7% by volume of oxygen.
【００２４】[0024]
【発明の効果】上記のことから明らかなように、本発明
は、ターゲット中の酸素含有量をコントロールし、スパ
ッタリング中の酸素のコントロールを容易にすることに
より、低抵抗を有するＩＴＯ膜を安定的に形成すること
ができるスパッタリングターゲットを提供できる。ま
た、本発明のターゲットにおいて、金属を含んでいるの
で、従来のＩＴＯターゲットに比べ、熱衝撃性に優れ、
ターゲットの割れの問題を低減できる。As is apparent from the above, the present invention stabilizes an ITO film having a low resistance by controlling the oxygen content in the target and facilitating the control of oxygen during sputtering. It is possible to provide a sputtering target that can be formed in the above. Further, in the target of the present invention, since it contains a metal, it is superior in thermal shock resistance to a conventional ITO target,
The problem of target cracking can be reduced.
【００２５】また、本発明によれば、成膜方法や制御条
件に応じて適宜決定される最適な酸素含有量を有する各
種のターゲットを製造することができる。Further, according to the present invention, it is possible to manufacture various targets having an optimum oxygen content appropriately determined according to the film forming method and control conditions.
【図１】本発明のスパッタターゲットを用いた場合と従
来のＩＴＯターゲットを用いた場合、スパッタリングの
導入ガス中の酸素の割合に対するＩＴＯ膜の比抵抗の関
係を示すグラフ。FIG. 1 is a graph showing the relationship between the specific resistance of an ITO film and the ratio of oxygen in a gas introduced in sputtering when a sputtering target of the present invention is used and when a conventional ITO target is used.
Claims (7)
種のうち少なくとも１種と、In、Sn、In-Sn 合金の３種
のうち少なくとも１種とからなることを特徴とするＩＴ
Ｏ透明導電膜用スパッタリングターゲット。1. An In 2 O 3 , SnO 2 , and In 2 O 3 -SnO 2 composite oxide.
IT characterized by comprising at least one of three kinds and at least one of three kinds of In, Sn and In-Sn alloys
O Sputtering target for transparent conductive film.
とSnを主成分とする合金からなることを特徴とするＩＴ
Ｏ透明導電膜用スパッタリングターゲット。2. An oxide containing In 2 O 3 and SnO 2 as main components, and In
IT characterized by being composed of an alloy whose main components are Sn and Sn
O Sputtering target for transparent conductive film.
有率が８重量％〜１７重量％であることを特徴とするＩ
ＴＯ透明導電膜用スパッタリングターゲット。3. In, Sn, and O (oxygen), and the content of O (oxygen) is 8% by weight to 17% by weight.
Sputtering target for TO transparent conductive film.
のものと金属状態のものと含めて、３重量％〜１５重量
％であることを特徴とする請求項３のＩＴＯ透明導電膜
用スパッタリングターゲット。4. The ITO transparent conductive film according to claim 3, wherein the content of Sn in the target is 3% by weight to 15% by weight including that in the oxide state and that in the metallic state. Sputtering target.
種のうち少なくとも１種の粉末と、In、Sn、In-Sn 合金
の３種のうち少なくとも１種の粉末とを混合した粉末
を、真空中あるいは非酸化性ガス雰囲気中において、２
００℃〜９００℃でホットプレスすることを特徴とする
ＩＴＯ透明導電膜用スパッタリングターゲットの製造方
法。5. In 2 O 3 , SnO 2 , and In 2 O 3 -SnO 2 composite oxide
A powder obtained by mixing at least one of the powders and at least one of the three powders of In, Sn, and In-Sn alloy in a vacuum or in a non-oxidizing gas atmosphere.
A method for manufacturing a sputtering target for an ITO transparent conductive film, which comprises hot pressing at 00 ° C to 900 ° C.
と、InとSnを主成分とする合金の粉末とを混合した粉末
を、真空中あるいは非酸化性ガス雰囲気中において、２
００℃〜９００℃でホットプレスすることを特徴とする
ＩＴＯ透明導電膜用スパッタリングターゲットの製造方
法。6. A powder obtained by mixing an oxide powder containing In 2 O 3 and SnO 2 as main components and an alloy powder containing In and Sn as main components in a vacuum or in a non-oxidizing gas atmosphere. In 2
A method for manufacturing a sputtering target for an ITO transparent conductive film, which comprises hot pressing at 00 ° C to 900 ° C.
用いて、スパッタリングによりＩＴＯ透明導電膜を形成
する方法。7. A method for forming an ITO transparent conductive film by sputtering using the target according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4056771A JPH05222526A (en) | 1992-02-07 | 1992-02-07 | Sputtering target for transparent conductive film consisting of ito and production thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4056771A JPH05222526A (en) | 1992-02-07 | 1992-02-07 | Sputtering target for transparent conductive film consisting of ito and production thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05222526A true JPH05222526A (en) | 1993-08-31 |
Family
ID=13036741
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4056771A Withdrawn JPH05222526A (en) | 1992-02-07 | 1992-02-07 | Sputtering target for transparent conductive film consisting of ito and production thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05222526A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997008358A1 (en) * | 1995-08-31 | 1997-03-06 | Innovative Sputtering Technology | A process for manufacturing ito alloy articles |
| EP0761838A1 (en) * | 1995-08-18 | 1997-03-12 | W.C. Heraeus GmbH | Sputtering target and method for its manufacturing |
| CN1320155C (en) * | 2001-06-26 | 2007-06-06 | 三井金属矿业株式会社 | Sputtering target for high resistance transparent conductive membrane and mfg. method of high resistance transparent conductive membrane |
| US8338002B2 (en) | 2008-06-06 | 2012-12-25 | Dexerials Corporation | Sputtering composite target, method for manufacuturing transparent conductive film using the same and transparent conductive film-provided base material |
-
1992
- 1992-02-07 JP JP4056771A patent/JPH05222526A/en not_active Withdrawn
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0761838A1 (en) * | 1995-08-18 | 1997-03-12 | W.C. Heraeus GmbH | Sputtering target and method for its manufacturing |
| CN1066782C (en) * | 1995-08-18 | 2001-06-06 | W·C·贺利氏股份有限两合公司 | Manufacturing method of cathode sputtering target or the similar targets |
| WO1997008358A1 (en) * | 1995-08-31 | 1997-03-06 | Innovative Sputtering Technology | A process for manufacturing ito alloy articles |
| US6123787A (en) * | 1995-08-31 | 2000-09-26 | Innovative Sputtering Technology | Process for manufacturing ITO alloy articles |
| CN1320155C (en) * | 2001-06-26 | 2007-06-06 | 三井金属矿业株式会社 | Sputtering target for high resistance transparent conductive membrane and mfg. method of high resistance transparent conductive membrane |
| US8338002B2 (en) | 2008-06-06 | 2012-12-25 | Dexerials Corporation | Sputtering composite target, method for manufacuturing transparent conductive film using the same and transparent conductive film-provided base material |
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| A300 | Withdrawal of application because of no request for examination |
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