JPH05216071A - Substrate for light valve - Google Patents

Substrate for light valve

Info

Publication number
JPH05216071A
JPH05216071A JP1788592A JP1788592A JPH05216071A JP H05216071 A JPH05216071 A JP H05216071A JP 1788592 A JP1788592 A JP 1788592A JP 1788592 A JP1788592 A JP 1788592A JP H05216071 A JPH05216071 A JP H05216071A
Authority
JP
Japan
Prior art keywords
substrate
light valve
element electrodes
light
picture elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1788592A
Other languages
Japanese (ja)
Inventor
Hiroaki Takasu
博昭 鷹巣
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP1788592A priority Critical patent/JPH05216071A/en
Publication of JPH05216071A publication Critical patent/JPH05216071A/en
Pending legal-status Critical Current

Links

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  • Liquid Crystal (AREA)

Abstract

PURPOSE:To obtain the substrate for a light valve having picture elements of a high opening rate by forming the picture element electrodes of the adjacent picture elements of a structure having superposed parts on each other via insulating films. CONSTITUTION:Switching elements 102 consisting of TFTs and diodes made of polysilicon or amorphous silicon, etc., or single crystalline silicon transistors, etc., for the picture elements are formed on a transparent substrate 101. The picture element electrodes 103 are connected to the switching elements 102 of the respective picture elements. The picture element electrodes 103 of the adjacent picture elements are formed so as to have the parts 104 superposed on each other via the insulating films 106. Then, a liquid crystal which is the light valve material does not exist in the parts which cannot be controlled in the case of packaging of a liquid crystal cell, etc., on the substrate and forming of the light valve device. Therefore incident light can be shut off only by setting the voltage to be supplied to the picture element electrodes 103 in the case of shutting off of the incident light. The light shielding film called as a black matrix on the opposite substrate is dispensed with and the opening rate is improved. Bright images are thus obtd.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は光弁用基板に関する。FIELD OF THE INVENTION The present invention relates to a light valve substrate.

【0002】[0002]

【従来の技術】従来の光弁用基板では基板断面図を示す
図3のように隣接する画素の画素電極103間には間隙
105を有する構造になっていた。
2. Description of the Related Art A conventional light valve substrate has a structure having a gap 105 between pixel electrodes 103 of adjacent pixels as shown in FIG.

【0003】[0003]

【発明が解決しようとする課題】しかしながら、上記構
造の光弁用基板では光照射時に光弁物質を用いて光透過
を遮断しなければならない場合に、画素電極間の間隙上
の光弁物質は作用しないため、この間隙より入射光がも
れてしまう。このため、一般にはこの間隙よりも大きな
遮光膜を対向基板に設けることにより光のもれを防止し
ている。ところが画素の微細化に従い、遮光膜の占める
面積比が大きくなり、画素全体の開口率が低下し、暗い
画像となってしまうという問題点があった。また、画像
上に現れる従横の黒線は視る者に不快感を与えていた。
However, in the light valve substrate having the above structure, when light transmission must be blocked by using the light valve material at the time of light irradiation, the light valve material on the gap between the pixel electrodes is Since it does not work, incident light leaks from this gap. Therefore, in general, a light-shielding film larger than this gap is provided on the counter substrate to prevent light leakage. However, there has been a problem that the area ratio of the light-shielding film increases with the miniaturization of pixels, and the aperture ratio of the entire pixels decreases, resulting in a dark image. Further, the subordinate black line appearing on the image gives the viewer an unpleasant feeling.

【0004】本発明は、上記課題を解消して高開口率の
画素を有する光弁用基板を提供することを目的とする。
It is an object of the present invention to solve the above problems and provide a light valve substrate having pixels with a high aperture ratio.

【0005】[0005]

【課題を解決するための手段】本発明の光弁用基板が上
記目的を達成するために採用した主たる手段は、隣接す
る画素の画素電極が互いに重畳部を有する構造にしたこ
とを特徴とする。
The main means adopted by the light valve substrate of the present invention to achieve the above-mentioned object is that the pixel electrodes of adjacent pixels have a structure in which they overlap each other. ..

【0006】[0006]

【作用】上述したように、本発明は従来構造の画素を有
する光弁用基板に比べて、高開口率の画素を有する光弁
用基板を得ることができる。
As described above, according to the present invention, a light valve substrate having pixels having a high aperture ratio can be obtained as compared with a light valve substrate having pixels having a conventional structure.

【0007】[0007]

【実施例】以下、図面を参照して本発明の好適な実施例
を説明する。図1は本発明のアクティブマトリクス型の
光弁用基板の一実施例を示す模式的断面図である。透明
基板101上に画素のポリシリコンまたはアモルファス
シリコンを材料とするTFTやダイオード、さらに単結
晶シリコントランジスタなどよりなるスイッチング素子
102が形成され、画素電極103は、各画素のスイッ
チング素子102に接続されている。隣接する画素の画
素電極103は絶縁膜106を介して互いに重畳部10
4を有するように形成されている。なお、画素電極10
3はポリシリコンまたはITO等よりなり、絶縁膜10
6はSiO2 やSiN等よりなる。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic sectional view showing an embodiment of an active matrix type light valve substrate of the present invention. A switching element 102 including a TFT or a diode made of polysilicon or amorphous silicon of a pixel, and a single crystal silicon transistor is formed on a transparent substrate 101, and a pixel electrode 103 is connected to the switching element 102 of each pixel. There is. The pixel electrodes 103 of adjacent pixels are overlapped with each other via the insulating film 106.
4 is formed. The pixel electrode 10
3 is made of polysilicon, ITO or the like, and has an insulating film 10
6 is made of SiO 2 , SiN or the like.

【0008】図1−図2の実施例によれば隣接する画素
電極は互いに重畳部を有しているのでこの基板上に液晶
セル等を実装し、光弁装置を形成した場合、光弁物質で
ある液晶を制御できない部分は存在しない。従って入射
光を遮断する場合には画素電極103に供給する電圧の
設定のみで行うことが可能となり、従来必要であった対
向基板上のブラックマトリクスと呼ばれる遮光膜は不要
となるため、開口率が向上し、明るい画像が得られる。
さらに、得られる画像には従横に走る不快な黒線もな
い。
According to the embodiment shown in FIGS. 1 and 2, since the adjacent pixel electrodes have overlapping portions with each other, when a light valve device is formed by mounting a liquid crystal cell or the like on this substrate, a light valve material is formed. There is no part that cannot control the liquid crystal. Therefore, in order to block the incident light, it is possible to perform it only by setting the voltage supplied to the pixel electrode 103, and the light-shielding film called a black matrix on the counter substrate, which is conventionally required, is unnecessary, so that the aperture ratio is Improved and brighter images are obtained.
Furthermore, there are no unpleasant black lines running sideways in the resulting image.

【0009】[0009]

【発明の効果】上述したように本発明によれば、従来の
画素電極構造を有する光弁用基板に比べて、高開口率の
光弁用基板を得ることができる。
As described above, according to the present invention, a light valve substrate having a higher aperture ratio can be obtained as compared with a conventional light valve substrate having a pixel electrode structure.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明のアクティブマトリクス型の光弁用基板
の一実施例を示す模式的断面図である。
FIG. 1 is a schematic sectional view showing an embodiment of an active matrix type light valve substrate of the present invention.

【図2】本発明による単純マトリクス型の光弁用基板の
一実施例を示す模式的断面図である。
FIG. 2 is a schematic sectional view showing an embodiment of a simple matrix type light valve substrate according to the present invention.

【図3】従来の光弁用基板を示す模式的断面図である。FIG. 3 is a schematic cross-sectional view showing a conventional light valve substrate.

【符号の説明】[Explanation of symbols]

101 透明基板 102 スイッチング素子 103 画素電極 104 重畳部 105 間隙 106 絶縁膜 101 transparent substrate 102 switching element 103 pixel electrode 104 overlapping portion 105 gap 106 insulating film

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 少なくとも互いに独立した複数の画素電
極が形成された液晶パネル用基板において、隣接する該
画素電極は絶縁膜を介して互いに重畳部を有することを
特徴とする液晶パネル用基板。
1. A substrate for a liquid crystal panel, in which at least a plurality of pixel electrodes independent of each other are formed, the adjacent pixel electrodes have overlapping portions with each other with an insulating film interposed therebetween.
JP1788592A 1992-02-03 1992-02-03 Substrate for light valve Pending JPH05216071A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1788592A JPH05216071A (en) 1992-02-03 1992-02-03 Substrate for light valve

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1788592A JPH05216071A (en) 1992-02-03 1992-02-03 Substrate for light valve

Publications (1)

Publication Number Publication Date
JPH05216071A true JPH05216071A (en) 1993-08-27

Family

ID=11956163

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1788592A Pending JPH05216071A (en) 1992-02-03 1992-02-03 Substrate for light valve

Country Status (1)

Country Link
JP (1) JPH05216071A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011096276A1 (en) * 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
JP2012032793A (en) * 2010-07-01 2012-02-16 Semiconductor Energy Lab Co Ltd Electric field drive type display device
JP2022058383A (en) * 2015-03-19 2022-04-12 株式会社半導体エネルギー研究所 Display device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0217721B2 (en) * 1984-11-06 1990-04-23 Yamada Yuki Seizo Co Ltd
JPH0385516A (en) * 1989-08-30 1991-04-10 Canon Inc Liquid crystal element

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0217721B2 (en) * 1984-11-06 1990-04-23 Yamada Yuki Seizo Co Ltd
JPH0385516A (en) * 1989-08-30 1991-04-10 Canon Inc Liquid crystal element

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011096276A1 (en) * 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
JP2011180583A (en) * 2010-02-05 2011-09-15 Semiconductor Energy Lab Co Ltd Liquid crystal display device
JP2014167641A (en) * 2010-02-05 2014-09-11 Semiconductor Energy Lab Co Ltd Display device
US9057918B2 (en) 2010-02-05 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device comprising first and second pixel electrodes that overlap each other with an insulating layer interposed therebetween
JP2015232737A (en) * 2010-02-05 2015-12-24 株式会社半導体エネルギー研究所 Method for manufacturing liquid crystal display device
US9541803B2 (en) 2010-02-05 2017-01-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device comprising first and second reflective pixel electrodes that overlap each other with an insulating layer having a tapered first end portion interposed therebetween
TWI576643B (en) * 2010-02-05 2017-04-01 半導體能源研究所股份有限公司 Liquid crystal display device
JP2012032793A (en) * 2010-07-01 2012-02-16 Semiconductor Energy Lab Co Ltd Electric field drive type display device
US9305496B2 (en) 2010-07-01 2016-04-05 Semiconductor Energy Laboratory Co., Ltd. Electric field driving display device
US10274803B2 (en) 2010-07-01 2019-04-30 Semiconductor Energy Laboratory Co., Ltd. Electric field driving display device
JP2022031768A (en) * 2010-07-01 2022-02-22 株式会社半導体エネルギー研究所 Electric field driving type display device
JP2022058383A (en) * 2015-03-19 2022-04-12 株式会社半導体エネルギー研究所 Display device

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