JPH05211402A - Distributed constant type circuit - Google Patents
Distributed constant type circuitInfo
- Publication number
- JPH05211402A JPH05211402A JP4016004A JP1600492A JPH05211402A JP H05211402 A JPH05211402 A JP H05211402A JP 4016004 A JP4016004 A JP 4016004A JP 1600492 A JP1600492 A JP 1600492A JP H05211402 A JPH05211402 A JP H05211402A
- Authority
- JP
- Japan
- Prior art keywords
- dielectric
- line width
- transformer
- filter
- dielectric constant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Control Of Motors That Do Not Use Commutators (AREA)
- Waveguides (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、高周波伝送に用いられ
る分布定数型回路に関し、特に誘電率の異なる誘電体基
板で形成される分布定数型回路に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a distributed constant type circuit used for high frequency transmission, and more particularly to a distributed constant type circuit formed of dielectric substrates having different permittivities.
【0002】[0002]
【従来の技術】従来、高周波伝送に用いられる分布定数
型回路には、主線路に先端開放型4分の1波長スタブを
設け特定周波数を阻止するバンドエリミネーションフィ
ルタ等があり、ストリップラインで構成されることが多
い。上記フィルタ回路に用いられる誘電体基板は、所定
の誘電率のセラミックス等からなっており、例えば、上
記セラミックスを所定の型に入れ、焼結成形をして、一
様な誘電率をもつ基板を得ていた。また、上記基板上に
銅または銀パラジウム等の印刷により導体線路を形成す
るとともに、上記導体線路を形成する対称面にアース面
を設けてストリップラインを構成していた。2. Description of the Related Art Conventionally, a distributed constant type circuit used for high frequency transmission includes a band elimination filter for blocking a specific frequency by providing an open-ended quarter-wave stub on a main line, and is composed of a strip line. It is often done. The dielectric substrate used in the filter circuit is made of ceramics having a predetermined dielectric constant. For example, the ceramics is put in a predetermined mold and sintered to form a substrate having a uniform dielectric constant. I was getting. Further, a strip line is formed by forming a conductor line on the substrate by printing copper, silver palladium, or the like, and providing a ground plane on the symmetric surface forming the conductor line.
【0003】上記フィルタでは、その設計において、一
般的に特性インピーダンスがZout=50[Ω]で設計さ
れている他の回路と整合させる必要がある。ここで、比
誘電率εr =90,厚みh =0.5 [mm]のセラミックス基
板を用いて特性インピーダンスZinが他の回路と同じZ
out =50[Ω]で設計しようとすると、周波数と関係な
く、以下に述べる(1) 〜(6) 式から主線路の線幅 W
inは、 Win=0.012 [mm] となり、ストリップラインの製造は線幅が細すぎて困難
となる。また、たとえ上記の線幅のストリップラインが
実現できても、設計値より少しでも線幅 Winがずれる
と、特性インピーダンスZinが大きく変化してしまい、
所望の特性が得られなくなってしまう。In the design of the above filter, it is necessary to match it with another circuit whose characteristic impedance is generally designed with Z out = 50 [Ω]. Here, using a ceramic substrate having a relative permittivity ε r = 90 and a thickness h = 0.5 [mm], the characteristic impedance Z in is the same as that of other circuits.
If we try to design with out = 50 [Ω], the line width W of the main line will be calculated from Eqs. (1) to (6) below, regardless of the frequency.
Since in is W in = 0.012 [mm], it is difficult to manufacture strip lines because the line width is too thin. Further, even if the strip line having the above line width can be realized, if the line width W in deviates from the design value by a little, the characteristic impedance Z in changes greatly,
The desired characteristics cannot be obtained.
【0004】[0004]
【数1】 [Equation 1]
【0005】 但し、εre:基板の等価誘電率 εr :基板の比誘電率 W :ストリップラインの線幅[mm] h :基板の厚み[mm] λg :基板上での管内波長[mm] λ0 :電波の自由空間波長[mm] Z :特性インピーダンス[Ω] そこで、本出願人は、特願平3−326042号に示す
ように、λg/4 長のトランスフォーマーを用いて、実際
のフィルタのインピーダンスを下げ、線幅を広げて従来
からの印刷やエッヂング等で回路構成が容易なフィルタ
を提案した。上記提案のフィルタでは、線幅が太くなっ
たので、従来の特性インピーダンスZin=50[Ω]での
設計に比べて線幅のバラツキに対する特性インピーダン
スの変化を小さく抑えることができ、安定した特性を得
ることができた。Where ε re is the equivalent dielectric constant of the substrate ε r is the relative permittivity of the substrate W is the line width of the strip line [mm] h is the thickness of the substrate [mm] λg is the guide wavelength on the substrate [mm] λ 0 : Free-space wavelength of radio wave [mm] Z: Characteristic impedance [Ω] Therefore, the present applicant uses an actual filter using a λg / 4-length transformer as shown in Japanese Patent Application No. 3-326042. We proposed a filter whose circuit configuration is easy by reducing the impedance and widening the line width by conventional printing and etching. In the filter proposed above, the line width becomes thicker, so that it is possible to suppress the change in the characteristic impedance due to the variation in the line width to be small compared to the conventional design with the characteristic impedance Z in = 50 [Ω], and the stable characteristic can be obtained. I was able to get
【0006】またトランスフォーマーの特性インピーダ
ンスZt は、The characteristic impedance Z t of the transformer is
【0007】[0007]
【数2】 [Equation 2]
【0008】 但し、Zout :外部の特性インピーダンス[Ω] Zin :フィルタの主線路の特性インピーダンス[Ω] となる。However, Z out is an external characteristic impedance [Ω] Z in is a characteristic impedance [Ω] of the main line of the filter.
【0009】[0009]
【発明が解決しようとする課題】ところが、一様な誘電
率の基板上に上記トランスフォーマーとフィルタ回路を
形成する場合、上記提案を達成するためにフィルタの主
線路の線幅に比べトランスフォーマーの線幅は必然的に
細くなってしまう。たとえば、比誘電率εr =90、厚み
h =0.5 [mm]のセラミックス基板を用いてフィルタの
主線路の特性インピーダンスをZin=10[Ω]とする
と、トランスフォーマーの特性インピーダンスZt =2
2.4[Ω]となる。このとき、フィルタの主線路とトラ
ンスフォーマーの線幅は、それぞれ Win=1.45[mm]と
Wt =0.25[mm]となる。However, when the transformer and the filter circuit are formed on a substrate having a uniform dielectric constant, in order to achieve the above proposal, the line width of the transformer is smaller than that of the main line of the filter. Will inevitably become thinner. For example, relative permittivity ε r = 90, thickness
If the characteristic impedance of the main line of the filter is Z in = 10 [Ω] using a ceramic substrate of h = 0.5 [mm], the characteristic impedance of the transformer Z t = 2
It becomes 2.4 [Ω]. At this time, the line widths of the main line of the filter and the transformer are W in = 1.45 [mm], respectively.
W t = 0.25 [mm].
【0010】ここで、上記トランスフォーマー及びフィ
ルタを導体の印刷やエッチング等で形成する場合、その
製造公差を線幅のバラツキによる特性インピーダンスの
変化の大きいトランスフォーマーを考慮して厳しくしな
ければならない問題点があった。本発明は、上記問題点
に鑑みなされたもので、製造における線幅のバラツキに
よる特性の変化を従来に比べ抑えることができ、これに
より製造公差に余裕をもたせ、特性の安定した分布定数
型回路を提供することを目的とする。Here, when the above-mentioned transformer and filter are formed by printing or etching a conductor, there is a problem that the manufacturing tolerance must be made strict in consideration of the transformer in which the characteristic impedance changes largely due to the variation of the line width. there were. The present invention has been made in view of the above problems, and can suppress changes in characteristics due to variations in line width in manufacturing as compared with conventional ones, thereby giving a margin to manufacturing tolerance and a distributed constant type circuit with stable characteristics. The purpose is to provide.
【0011】[0011]
【課題を解決するための手段】上記目的を解決するた
め、本発明では、所定誘電率の誘電体基板上に導体線路
を配設してストリップラインを形成した分布定数型回路
において、前記誘電体基板の少なくとも一部を、当該誘
電体基板の所定誘電率とは異なる誘電率の誘電体で形成
する分布定数型回路が提供される。In order to solve the above-mentioned problems, the present invention provides a distributed constant type circuit in which a conductor line is arranged on a dielectric substrate having a predetermined dielectric constant to form a strip line. Provided is a distributed constant circuit in which at least a part of a substrate is formed of a dielectric having a dielectric constant different from a predetermined dielectric constant of the dielectric substrate.
【0012】[0012]
【作用】この上記構成により、線幅の細いトランスフォ
ーマー部にはフィルタ部に比べて誘電率εr の低い誘電
体を用いることで、トランスフォーマーの特性インピー
ダンスZinを変えずに線幅 Wt を太くし、ストリップラ
インの製造による線幅のバラツキに対して特性の安定化
を図ることができる。With this structure, the transformer having a narrow line width is made of a dielectric material having a lower permittivity ε r than the filter, so that the line width W t can be increased without changing the characteristic impedance Z in of the transformer. However, the characteristics can be stabilized against variations in the line width due to the manufacturing of the strip line.
【0013】[0013]
【実施例】本発明の実施例を図1の図面に基づき説明す
る。図1は、本発明に係る分布定数型回路をバンドエリ
ミネーションフィルタとして用いた場合の構成を示す斜
視図である。図において、10,10aは厚みh が同じ
で比誘電率εr の異なる誘電体セラミックス基板、12
はフィルタ回路と他の回路を整合させるトランスフォー
マー、13は上記トランスフォーマー12の間に構成さ
れたフィルタ回路、11はアース面である。このフィル
タ回路13は、14a,14b,14cの主線路と、1
5,16,17,18の先端開放スタブで構成されてい
る。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described with reference to the drawing of FIG. FIG. 1 is a perspective view showing a configuration in which the distributed constant circuit according to the present invention is used as a band elimination filter. In the figure, 10 and 10a are dielectric ceramic substrates having the same thickness h and different relative permittivity ε r , 12
Is a transformer for matching the filter circuit with other circuits, 13 is a filter circuit formed between the transformers 12, and 11 is a ground plane. The filter circuit 13 includes a main line 14a, 14b, 14c and a main line 1
It is composed of 5, 16, 17, and 18 open-end stubs.
【0014】誘電体セラミックス基板10,10aは、
焼結成形する前に、それぞれを所定の大きさに型抜きし
て、組み合わせた後に焼結成形している。また、それぞ
れ別々に焼結成形した後に接着してもよい。さらに、上
記方法等で一体化された誘電体セラミックス基板上に、
銅または銀パラジウムの印刷もしくは銅メッキ後のエッ
チングにより、トランスフォーマー12、フィルタ回路
13、アース面11を形成している。The dielectric ceramic substrates 10 and 10a are
Before sinter-molding, each is die-cut into a predetermined size, combined, and then sinter-molded. Alternatively, they may be separately sintered and then adhered. Furthermore, on the dielectric ceramic substrate integrated by the above method,
The transformer 12, the filter circuit 13, and the ground plane 11 are formed by printing copper or silver-palladium or etching after copper plating.
【0015】例えば、誘電体セラミックス基板10は、
従来例と同様に、比誘電率εr =90、厚みh =0.5 [m
m]のセラミックスからなり、その基板上には、フィル
タ回路13が構成されている。フィルタ回路13は、主
線路14a,14b,14cをそれぞれ特性インピーダ
ンスZin=10[Ω]とし、線幅 Win=1.45[mm]、長さ
linが通過周波数 f0 のλg/4 となっており、また、先
端開放スタブ15〜18をそれぞれの阻止周波数 f1 〜
f4 のλg/4 長で、線幅がフィルタ回路13の入力端か
らみた特性インピーダンスZinが10[Ω]となるように
設計されている。さらに、誘電体セラミックス基板10
aは、比誘電率εr =35、厚みh =0.5 [mm]のセラミ
ックスからなり、その基板上には、トランスフォーマー
12が構成されている。トランスフォーマー12の特性
インピーダンスZt は、他の外部回路の特性インピーダ
ンスZout =50[Ω]と上記フィルタ回路の特性インピ
ーダンスZin=10[Ω]を整合するため、(7) 式からZ
t =22.4[Ω]とし、その線幅 Wt は(1) 〜(6) 式から
Wt =0.79[mm]、長さ lt は通過周波数 f0 のλg/4
となっている。図1では、トランスフォーマー12を形
成する誘電体セラミックス基板10aの比誘電率がフィ
ルタ回路を形成する誘電体セラミックス基板10と比べ
て低くなっていて、管内波長λg が長くなりトランスフ
ォーマー長 ltが長くなるので、小型化のためにトラン
スフォーマー12を折り曲げて配設している。For example, the dielectric ceramic substrate 10 is
Similar to the conventional example, relative permittivity ε r = 90, thickness h = 0.5 [m
m] of ceramics, and the filter circuit 13 is formed on the substrate. The filter circuit 13 has characteristic impedances Z in = 10 [Ω] for the main lines 14a, 14b, 14c, a line width W in = 1.45 [mm], and a length.
l in is λg / 4 of the passing frequency f 0 , and the open-end stubs 15 to 18 have blocking frequencies f 1 to
The length of f 4 is λg / 4, and the line width is designed so that the characteristic impedance Z in seen from the input end of the filter circuit 13 is 10 [Ω]. Furthermore, the dielectric ceramic substrate 10
a is made of ceramics having a relative permittivity ε r = 35 and a thickness h = 0.5 [mm], and the transformer 12 is formed on the substrate. Since the characteristic impedance Z t of the transformer 12 matches the characteristic impedance Z out = 50 [Ω] of the other external circuit and the characteristic impedance Z in = 10 [Ω] of the above filter circuit, Z from Equation (7).
With t = 22.4 [Ω], the line width W t can be calculated from equations (1) to (6).
W t = 0.79 [mm], length l t is λg / 4 with pass frequency f 0
Has become. In FIG. 1, the relative dielectric constant of the dielectric ceramics substrate 10a forming the transformer 12 is lower than that of the dielectric ceramics substrate 10 forming the filter circuit, so that the guide wavelength λg becomes longer and the transformer length l t becomes longer. Therefore, the transformer 12 is arranged in a bent state for downsizing.
【0016】上記本実施例では、従来例での比誘電率ε
r =90で一様な誘電体セラミックス基板を用いたときに
比べ、トランスフォーマー12の線幅 Wt が太くなり、
製造における線幅 Wt のバラツキによる特性の変化を抑
えることができ、より安定した分布定数型回路が得られ
る。In this embodiment, the relative permittivity ε in the conventional example is
The line width W t of the transformer 12 becomes thicker than when a uniform dielectric ceramic substrate with r = 90 is used.
It is possible to suppress changes in characteristics due to variations in the line width W t during manufacturing, and obtain a more stable distributed constant type circuit.
【0017】[0017]
【発明の効果】以上説明したように、本発明では、所定
誘電率の誘電体基板上に導体線路を配設してストリップ
ラインを形成した分布定数型回路において、前記誘電体
基板の少なくとも一部を、当該誘電体基板の所定誘電率
とは異なる誘電率の誘電体で形成するので、線幅のバラ
ツキによる特性の変化を小さく抑えることができ、安定
した分布定数型回路を提供できる。As described above, according to the present invention, in a distributed constant type circuit in which conductor lines are arranged on a dielectric substrate having a predetermined dielectric constant to form strip lines, at least a part of the dielectric substrate is provided. Is formed of a dielectric material having a dielectric constant different from the predetermined dielectric constant of the dielectric substrate, it is possible to suppress changes in characteristics due to variations in line width, and to provide a stable distributed constant type circuit.
【図1】本発明に係る分布定数型回路をバンドエリミネ
ーションフィルタとして用いた場合の構成を示す斜視図
である。FIG. 1 is a perspective view showing a configuration when a distributed constant circuit according to the present invention is used as a band elimination filter.
10 誘電体セラミックス基板 10a 誘電率が異なる誘電体セラミックス基板 11 アース面 12 トランスフォーマー 13 フィルタ回路 14a,14b,14c 主線路 15,16,17,18 先端開放スタブ 10 Dielectric Ceramic Substrate 10a Dielectric Ceramic Substrate with Different Permittivity 11 Ground Plane 12 Transformer 13 Filter Circuit 14a, 14b, 14c Main Line 15, 16, 17, 18 Open-end Stub
Claims (1)
配設してストリップラインを形成した分布定数型回路に
おいて、前記誘電体基板の少なくとも一部を、当該誘電
体基板の所定誘電率とは異なる誘電率の誘電体で形成す
ることを特徴とする分布定数型回路。1. A distributed constant circuit in which conductor lines are arranged on a dielectric substrate having a predetermined dielectric constant to form a strip line, wherein at least a part of the dielectric substrate has a predetermined dielectric constant of the dielectric substrate. A distributed constant circuit characterized by being formed of a dielectric material having a dielectric constant different from that of.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4016004A JPH05211402A (en) | 1992-01-31 | 1992-01-31 | Distributed constant type circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4016004A JPH05211402A (en) | 1992-01-31 | 1992-01-31 | Distributed constant type circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH05211402A true JPH05211402A (en) | 1993-08-20 |
Family
ID=11904473
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4016004A Pending JPH05211402A (en) | 1992-01-31 | 1992-01-31 | Distributed constant type circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH05211402A (en) |
Cited By (19)
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---|---|---|---|---|
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KR20020013185A (en) * | 2000-08-11 | 2002-02-20 | 윤종용 | A circuit board having a plurality of dilectric constant and manufactuaring thereof |
EP1376743A1 (en) * | 2002-06-27 | 2004-01-02 | Harris Corporation | High efficiency low pass filter |
EP1376739A1 (en) * | 2002-06-27 | 2004-01-02 | Harris Corporation | High efficiency single port resonant line |
EP1376750A1 (en) * | 2002-06-27 | 2004-01-02 | Harris Corporation | High efficiency quarter-wave transformer |
US6963259B2 (en) | 2002-06-27 | 2005-11-08 | Harris Corporation | High efficiency resonant line |
US6975279B2 (en) | 2003-05-30 | 2005-12-13 | Harris Foundation | Efficient radome structures of variable geometry |
US6982671B2 (en) | 2003-02-25 | 2006-01-03 | Harris Corporation | Slot fed microstrip antenna having enhanced slot electromagnetic coupling |
US6985118B2 (en) | 2003-07-07 | 2006-01-10 | Harris Corporation | Multi-band horn antenna using frequency selective surfaces |
US6992628B2 (en) | 2003-08-25 | 2006-01-31 | Harris Corporation | Antenna with dynamically variable operating band |
US6990729B2 (en) | 2003-09-05 | 2006-01-31 | Harris Corporation | Method for forming an inductor |
US6995711B2 (en) | 2003-03-31 | 2006-02-07 | Harris Corporation | High efficiency crossed slot microstrip antenna |
US7006052B2 (en) | 2003-05-15 | 2006-02-28 | Harris Corporation | Passive magnetic radome |
US7030834B2 (en) | 2003-09-03 | 2006-04-18 | Harris Corporation | Active magnetic radome |
US7088308B2 (en) | 2003-10-08 | 2006-08-08 | Harris Corporation | Feedback and control system for radomes |
US7158005B2 (en) | 2005-02-10 | 2007-01-02 | Harris Corporation | Embedded toroidal inductor |
US7196607B2 (en) | 2004-03-26 | 2007-03-27 | Harris Corporation | Embedded toroidal transformers in ceramic substrates |
WO2011034205A1 (en) * | 2009-09-16 | 2011-03-24 | 株式会社 ヨコオ | High frequency coupler |
JP2013207484A (en) * | 2012-03-28 | 2013-10-07 | Fujitsu General Ltd | Trap circuit and communication instrument |
-
1992
- 1992-01-31 JP JP4016004A patent/JPH05211402A/en active Pending
Cited By (25)
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---|---|---|---|---|
US5805034A (en) * | 1995-03-17 | 1998-09-08 | Lucent Technologies Inc. | Microstrip patch filters |
KR20020013185A (en) * | 2000-08-11 | 2002-02-20 | 윤종용 | A circuit board having a plurality of dilectric constant and manufactuaring thereof |
US6794952B2 (en) | 2002-06-27 | 2004-09-21 | Harris Corporation | High efficiency low pass filter |
EP1376739A1 (en) * | 2002-06-27 | 2004-01-02 | Harris Corporation | High efficiency single port resonant line |
EP1376750A1 (en) * | 2002-06-27 | 2004-01-02 | Harris Corporation | High efficiency quarter-wave transformer |
US6727785B2 (en) | 2002-06-27 | 2004-04-27 | Harris Corporation | High efficiency single port resonant line |
US6838954B2 (en) | 2002-06-27 | 2005-01-04 | Harris Corporation | High efficiency quarter-wave transformer |
US6963259B2 (en) | 2002-06-27 | 2005-11-08 | Harris Corporation | High efficiency resonant line |
EP1376743A1 (en) * | 2002-06-27 | 2004-01-02 | Harris Corporation | High efficiency low pass filter |
US6982671B2 (en) | 2003-02-25 | 2006-01-03 | Harris Corporation | Slot fed microstrip antenna having enhanced slot electromagnetic coupling |
US6995711B2 (en) | 2003-03-31 | 2006-02-07 | Harris Corporation | High efficiency crossed slot microstrip antenna |
US7006052B2 (en) | 2003-05-15 | 2006-02-28 | Harris Corporation | Passive magnetic radome |
US6975279B2 (en) | 2003-05-30 | 2005-12-13 | Harris Foundation | Efficient radome structures of variable geometry |
US6985118B2 (en) | 2003-07-07 | 2006-01-10 | Harris Corporation | Multi-band horn antenna using frequency selective surfaces |
US6992628B2 (en) | 2003-08-25 | 2006-01-31 | Harris Corporation | Antenna with dynamically variable operating band |
US7030834B2 (en) | 2003-09-03 | 2006-04-18 | Harris Corporation | Active magnetic radome |
US6990729B2 (en) | 2003-09-05 | 2006-01-31 | Harris Corporation | Method for forming an inductor |
US7253711B2 (en) | 2003-09-05 | 2007-08-07 | Harris Corporation | Embedded toroidal inductors |
US7513031B2 (en) | 2003-09-05 | 2009-04-07 | Harris Corporation | Method for forming an inductor in a ceramic substrate |
US7088308B2 (en) | 2003-10-08 | 2006-08-08 | Harris Corporation | Feedback and control system for radomes |
US7196607B2 (en) | 2004-03-26 | 2007-03-27 | Harris Corporation | Embedded toroidal transformers in ceramic substrates |
US7158005B2 (en) | 2005-02-10 | 2007-01-02 | Harris Corporation | Embedded toroidal inductor |
WO2011034205A1 (en) * | 2009-09-16 | 2011-03-24 | 株式会社 ヨコオ | High frequency coupler |
JPWO2011034205A1 (en) * | 2009-09-16 | 2013-02-14 | 株式会社ヨコオ | High frequency coupler |
JP2013207484A (en) * | 2012-03-28 | 2013-10-07 | Fujitsu General Ltd | Trap circuit and communication instrument |
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