JPH05206577A - ポテンシャル井戸を有する変調可能な半導体電子−光学デバイス - Google Patents
ポテンシャル井戸を有する変調可能な半導体電子−光学デバイスInfo
- Publication number
- JPH05206577A JPH05206577A JP4286219A JP28621992A JPH05206577A JP H05206577 A JPH05206577 A JP H05206577A JP 4286219 A JP4286219 A JP 4286219A JP 28621992 A JP28621992 A JP 28621992A JP H05206577 A JPH05206577 A JP H05206577A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- barrier
- code
- charge
- carriers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 230000004888 barrier function Effects 0.000 claims abstract description 44
- 238000009825 accumulation Methods 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 36
- 239000000969 carrier Substances 0.000 claims description 24
- 230000003287 optical effect Effects 0.000 claims description 6
- 238000010521 absorption reaction Methods 0.000 claims description 5
- 239000002800 charge carrier Substances 0.000 claims description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- 230000009471 action Effects 0.000 claims description 2
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- -1 indium phosphide compound Chemical class 0.000 claims 1
- 230000031700 light absorption Effects 0.000 abstract description 6
- 239000004020 conductor Substances 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 5
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 230000027756 respiratory electron transport chain Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000004611 spectroscopical analysis Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- CZMRCDWAGMRECN-UHFFFAOYSA-N 2-{[3,4-dihydroxy-2,5-bis(hydroxymethyl)oxolan-2-yl]oxy}-6-(hydroxymethyl)oxane-3,4,5-triol Chemical compound OCC1OC(CO)(OC2OC(CO)C(O)C(O)C2O)C(O)C1O CZMRCDWAGMRECN-UHFFFAOYSA-N 0.000 description 1
- 230000005699 Stark effect Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 238000005421 electrostatic potential Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000013139 quantization Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
- G02F1/01725—Non-rectangular quantum well structures, e.g. graded or stepped quantum wells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
- G02F1/01725—Non-rectangular quantum well structures, e.g. graded or stepped quantum wells
- G02F1/0175—Non-rectangular quantum well structures, e.g. graded or stepped quantum wells with a spatially varied well profile, e.g. graded or stepped quantum wells
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Nonlinear Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR9113146A FR2683101A1 (fr) | 1991-10-24 | 1991-10-24 | Modulateur electro-optique semi-conducteur a puits de potentiel. |
| FR9113146 | 1991-10-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05206577A true JPH05206577A (ja) | 1993-08-13 |
Family
ID=9418282
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4286219A Pending JPH05206577A (ja) | 1991-10-24 | 1992-10-23 | ポテンシャル井戸を有する変調可能な半導体電子−光学デバイス |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0539292A1 (enExample) |
| JP (1) | JPH05206577A (enExample) |
| AU (1) | AU2711692A (enExample) |
| FR (1) | FR2683101A1 (enExample) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5034783A (en) * | 1990-07-27 | 1991-07-23 | At&T Bell Laboratories | Semiconductor device including cascadable polarization independent heterostructure |
-
1991
- 1991-10-24 FR FR9113146A patent/FR2683101A1/fr active Granted
-
1992
- 1992-10-19 AU AU27116/92A patent/AU2711692A/en not_active Abandoned
- 1992-10-22 EP EP92402881A patent/EP0539292A1/fr not_active Withdrawn
- 1992-10-23 JP JP4286219A patent/JPH05206577A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP0539292A1 (fr) | 1993-04-28 |
| FR2683101A1 (fr) | 1993-04-30 |
| FR2683101B1 (enExample) | 1995-02-24 |
| AU2711692A (en) | 1993-04-29 |
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