FR2683101A1 - Modulateur electro-optique semi-conducteur a puits de potentiel. - Google Patents
Modulateur electro-optique semi-conducteur a puits de potentiel. Download PDFInfo
- Publication number
- FR2683101A1 FR2683101A1 FR9113146A FR9113146A FR2683101A1 FR 2683101 A1 FR2683101 A1 FR 2683101A1 FR 9113146 A FR9113146 A FR 9113146A FR 9113146 A FR9113146 A FR 9113146A FR 2683101 A1 FR2683101 A1 FR 2683101A1
- Authority
- FR
- France
- Prior art keywords
- layer
- sign
- barrier
- carriers
- well
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 13
- 230000004888 barrier function Effects 0.000 claims abstract description 43
- 230000003287 optical effect Effects 0.000 claims abstract description 8
- 230000000694 effects Effects 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 34
- 239000000969 carrier Substances 0.000 claims description 27
- 238000010521 absorption reaction Methods 0.000 claims description 9
- 239000002800 charge carrier Substances 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 2
- 241000370685 Arge Species 0.000 claims 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 8
- 230000005684 electric field Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 2
- 230000027756 respiratory electron transport chain Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- CZMRCDWAGMRECN-UHFFFAOYSA-N 2-{[3,4-dihydroxy-2,5-bis(hydroxymethyl)oxolan-2-yl]oxy}-6-(hydroxymethyl)oxane-3,4,5-triol Chemical compound OCC1OC(CO)(OC2OC(CO)C(O)C(O)C2O)C(O)C1O CZMRCDWAGMRECN-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000005699 Stark effect Effects 0.000 description 1
- 239000000370 acceptor Substances 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005421 electrostatic potential Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
- G02F1/01725—Non-rectangular quantum well structures, e.g. graded or stepped quantum wells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
- G02F1/01725—Non-rectangular quantum well structures, e.g. graded or stepped quantum wells
- G02F1/0175—Non-rectangular quantum well structures, e.g. graded or stepped quantum wells with a spatially varied well profile, e.g. graded or stepped quantum wells
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Nonlinear Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR9113146A FR2683101A1 (fr) | 1991-10-24 | 1991-10-24 | Modulateur electro-optique semi-conducteur a puits de potentiel. |
| AU27116/92A AU2711692A (en) | 1991-10-24 | 1992-10-19 | Electro-optical semiconductor modulator with potential well |
| EP92402881A EP0539292A1 (fr) | 1991-10-24 | 1992-10-22 | Modulateur électro-optique semiconducteur à puits de potentiel |
| JP4286219A JPH05206577A (ja) | 1991-10-24 | 1992-10-23 | ポテンシャル井戸を有する変調可能な半導体電子−光学デバイス |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR9113146A FR2683101A1 (fr) | 1991-10-24 | 1991-10-24 | Modulateur electro-optique semi-conducteur a puits de potentiel. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2683101A1 true FR2683101A1 (fr) | 1993-04-30 |
| FR2683101B1 FR2683101B1 (enExample) | 1995-02-24 |
Family
ID=9418282
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR9113146A Granted FR2683101A1 (fr) | 1991-10-24 | 1991-10-24 | Modulateur electro-optique semi-conducteur a puits de potentiel. |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0539292A1 (enExample) |
| JP (1) | JPH05206577A (enExample) |
| AU (1) | AU2711692A (enExample) |
| FR (1) | FR2683101A1 (enExample) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5034783A (en) * | 1990-07-27 | 1991-07-23 | At&T Bell Laboratories | Semiconductor device including cascadable polarization independent heterostructure |
-
1991
- 1991-10-24 FR FR9113146A patent/FR2683101A1/fr active Granted
-
1992
- 1992-10-19 AU AU27116/92A patent/AU2711692A/en not_active Abandoned
- 1992-10-22 EP EP92402881A patent/EP0539292A1/fr not_active Withdrawn
- 1992-10-23 JP JP4286219A patent/JPH05206577A/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5034783A (en) * | 1990-07-27 | 1991-07-23 | At&T Bell Laboratories | Semiconductor device including cascadable polarization independent heterostructure |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0539292A1 (fr) | 1993-04-28 |
| FR2683101B1 (enExample) | 1995-02-24 |
| AU2711692A (en) | 1993-04-29 |
| JPH05206577A (ja) | 1993-08-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0236189B1 (fr) | Structure semi-conductrice monolithique d'un transistor bipolaire à hétérojonction et d'un laser | |
| EP0869593A1 (fr) | Laser semiconducteur à émission de surface | |
| EP3084843B1 (fr) | Elément de détection quantique à faible bruit et procédé de fabrication d'un tel élément de photodétection | |
| US5436756A (en) | Suppressed photocurrent, quantum well optical modulation device | |
| FR2684805A1 (fr) | Dispositif optoelectronique a tres faible resistance serie. | |
| EP0566494B1 (fr) | Cavité laser à hétérostructure semi-conductrice dissymétrique à pompage électronique | |
| CA1314615C (fr) | Modulateur d'onde electromagnetique a puits quantiques couples, et application a un detecteur d'onde electromagnetique | |
| FR2663787A1 (fr) | Detecteur d'ondes electromagnetiques. | |
| WO1992022847A1 (fr) | Dispositif photorefractif | |
| WO1993013563A1 (fr) | Procede de fabrication d'une structure semi-conductrice susceptible d'effet laser multi-longueurs d'onde, et dispositif obtenu | |
| FR2758657A1 (fr) | Photodetecteur metal-semiconducteur-metal | |
| EP1764887A1 (fr) | Dispositif opto-electronique comportant un laser et un modulateur integres et procede de realisation associe | |
| FR2787246A1 (fr) | Laser de type semi-conducteur | |
| EP0993088B1 (fr) | Laser à semiconducteur, à spectre de gain accordable | |
| EP0407250A1 (fr) | Détecteur d'ondes électromagnétiques | |
| EP0082787B1 (fr) | Photodiode à zones d'absorption et d'avalanche séparées | |
| FR2683101A1 (fr) | Modulateur electro-optique semi-conducteur a puits de potentiel. | |
| US6897993B2 (en) | Electroabsorption modulator, modulator laser device and method for producing an electroabsorption modulator | |
| EP0845817A1 (fr) | Photodiodes à avalanche | |
| FR2675949A1 (fr) | Modulateur d'ondes et detecteur optique a puits quantiques. | |
| EP0274289B1 (fr) | Modulateur optique à superréseau | |
| EP0274940A1 (fr) | Dispositif de multiplication de porteurs de charge par un phénomène d'avalanche, et son application aux photodétecteurs, aux photocathodes, et aux visionneurs infrarouges | |
| EP2816679B1 (fr) | Dispositif d'émission laser à modulateur de lumière intégré | |
| EP0651477B1 (fr) | Dispositif laser intégré à émission de surface | |
| CA3224067A1 (fr) | Composant optoelectronique insensibles aux dislocations |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |