JPH0520634A - Thin-film magnetic head wafer - Google Patents

Thin-film magnetic head wafer

Info

Publication number
JPH0520634A
JPH0520634A JP16853491A JP16853491A JPH0520634A JP H0520634 A JPH0520634 A JP H0520634A JP 16853491 A JP16853491 A JP 16853491A JP 16853491 A JP16853491 A JP 16853491A JP H0520634 A JPH0520634 A JP H0520634A
Authority
JP
Japan
Prior art keywords
film
thin
magnetic
films
head
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16853491A
Other languages
Japanese (ja)
Inventor
Takao Matsubara
孝男 松原
Kenichi Inomata
賢一 猪股
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP16853491A priority Critical patent/JPH0520634A/en
Publication of JPH0520634A publication Critical patent/JPH0520634A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127Structure or manufacture of heads, e.g. inductive
    • G11B5/31Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3163Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
    • G11B5/3166Testing or indicating in relation thereto, e.g. before the fabrication is completed
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127Structure or manufacture of heads, e.g. inductive
    • G11B5/187Structure or manufacture of the surface of the head in physical contact with, or immediately adjacent to the recording medium; Pole pieces; Gap features
    • G11B5/1871Shaping or contouring of the transducing or guiding surface
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127Structure or manufacture of heads, e.g. inductive
    • G11B5/187Structure or manufacture of the surface of the head in physical contact with, or immediately adjacent to the recording medium; Pole pieces; Gap features
    • G11B5/23Gap features
    • G11B5/232Manufacture of gap
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127Structure or manufacture of heads, e.g. inductive
    • G11B5/31Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3109Details
    • G11B5/3116Shaping of layers, poles or gaps for improving the form of the electrical signal transduced, e.g. for shielding, contour effect, equalizing, side flux fringing, cross talk reduction between heads or between heads and information tracks

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Magnetic Heads (AREA)

Abstract

PURPOSE:To enable a nearly zero pole height quantity to be controlled with good accuracy by retreating the upper magnetic films of two pieces of pseudo thin-film head elements toward the central direction of insulating films from the position where the outer edges of lower magnetic films climb over the top of the lower magnetic films. CONSTITUTION:Plural pieces of the thin-film magnetic head elements are disposed in a matrix form on one sheet of wafer by successively laminating lower magnetic layers 6, gap films 1, lower insulating films 3, plural layers of coils 4, upper insulating films 5, and the upper magnetic films 2. This thin-film head wafer has two pieces of the pseudo thin-film head elements which are disposed on both sides of plural pieces of the thin-film magnetic head elements and have the laminated films similar to the laminated films of the thin-film magnetic head elements in the respective lines or rows. The upper magnetic films 2 of two pieces of these pseudo thin-film head elements are formed into the structure in which these films retract to the center of the insulating films from the position A where the outer edges of the lower insulating films 3 climb over the top of the lower magnetic films 6. The upper magnetic films 2 are formed smaller than the lower insulating films 3 in such a manner, by which the direct detection of the true pole height '0' from the element surface is executed. The pole height quantity which is nearly '0' to the max. possible extent is thereby controlled with the good accuracy.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、薄膜磁気ヘッド・ウェ
ハ、特にウェハ上の擬似薄膜ヘッド素子の構造に関す
る。
FIELD OF THE INVENTION This invention relates to thin film magnetic head wafers, and more particularly to the structure of pseudo thin film head elements on a wafer.

【0002】[0002]

【従来の技術】図5に、従来の薄膜磁気ヘッドの構造を
示す。図5(a)は平面図、図5(b)は図5(a)の
E−E線断面図である。この構造では、下部絶縁膜3の
端部までの距離はポールハイトと呼ばれており、薄膜磁
気ヘッドの効率を左右する重要なパラメータである。ポ
ールハイトが過度に大きいと、上部磁性膜2と下部磁性
膜6との間で漏洩する磁場が増加して効率が低下する。
このため、ポールハイトは極力小さい寸法に設定するこ
とが好ましいが、このポールハイトが「0」より小さく
なると、実効的に非磁性ギャップ膜1が大きくなって分
解能が低下する。従ってポールハイトを限りなく「0」
に近づけることが製造上の要点である。
2. Description of the Related Art FIG. 5 shows the structure of a conventional thin film magnetic head. 5A is a plan view, and FIG. 5B is a sectional view taken along the line EE of FIG. In this structure, the distance to the end of the lower insulating film 3 is called the pole height, which is an important parameter that affects the efficiency of the thin film magnetic head. If the pole height is excessively large, the magnetic field leaking between the upper magnetic film 2 and the lower magnetic film 6 increases and the efficiency decreases.
For this reason, it is preferable to set the pole height to a size as small as possible. However, if the pole height is smaller than "0", the nonmagnetic gap film 1 is effectively enlarged and the resolution is lowered. Therefore, the pole height is infinitely "0"
The key point in manufacturing is to approach

【0003】従来のこのポールハイト量の制御は、真の
ポールハイト「0」部が平面的に検出できないため、図
5のA点を仮の「0」として加工していた。
In the conventional control of the pole height amount, since the true pole height "0" portion cannot be detected in a plane, the point A in FIG. 5 is processed as a temporary "0".

【0004】なお図5において、4はコイル、5は上部
絶縁膜である。
In FIG. 5, 4 is a coil and 5 is an upper insulating film.

【0005】[0005]

【発明が解決しようとする課題】上述したように、従来
の薄膜磁気ヘッドのポールハイト制御の場合には、上部
絶縁膜の厚さ形状によって真のポールハイト「0」と仮
のポールハイト「0」のバラツキが生じてしまい、結局
ポールハイト量のバラツキが大きくなる欠点がある。
As described above, in the case of controlling the pole height of the conventional thin film magnetic head, the true pole height "0" and the temporary pole height "0" depend on the thickness shape of the upper insulating film. However, there is a drawback that the variation of the pole height amount becomes large after all.

【0006】本発明の目的は、上述のような従来の薄膜
磁気ヘッドの欠点を解消して、ポールハイト量を素子面
から見ることができ、信頼性に優れた薄膜磁気ヘッドを
得ることのできる薄膜磁気ヘッド・ウェハを提供するこ
とにある。
An object of the present invention is to eliminate the drawbacks of the conventional thin-film magnetic head as described above, to see the pole height amount from the element surface, and to obtain a highly reliable thin-film magnetic head. It is to provide a thin film magnetic head wafer.

【0007】[0007]

【課題を解決するための手段】本発明は、下部磁性膜,
下部絶縁膜,ギャップ膜,複数層のコイル,上部絶縁
膜,上部磁性膜を順次積層して、一枚のウェハ上に行列
状に複数個の薄膜ヘッド素子を配し、その各行または各
列に複数個の前記素子を挟んで配置された前記薄膜ヘッ
ド素子と同様の積層膜を備えた2個の擬似薄膜ヘッド素
子を有する薄膜磁気ヘッド・ウェハにおいて、前記2個
の擬似薄膜ヘッド素子の上部磁性膜を前記下部絶縁膜の
外縁部が前記下部磁性膜上を乗り越える位置から絶縁膜
中心方向に後退させたことを特徴とする。
The present invention provides a lower magnetic film,
A lower insulating film, a gap film, a plurality of layers of coils, an upper insulating film, and an upper magnetic film are sequentially laminated, and a plurality of thin film head elements are arranged in a matrix on a single wafer, and each row or each column thereof is arranged. In a thin film magnetic head wafer having two pseudo thin film head elements having the same laminated film as the thin film head elements arranged with a plurality of the elements sandwiched therebetween, the upper magnetic properties of the two pseudo thin film head elements It is characterized in that the film is made to recede toward the center of the insulating film from the position where the outer edge portion of the lower insulating film crosses over the lower magnetic film.

【0008】また本発明は、下部磁性膜,下部絶縁膜,
ギャップ膜,複数層のコイル,上部絶縁膜,上部磁性膜
を順次積層して、一枚のウェハ上に行列状に複数個の薄
膜ヘッド素子を配し、その各行または各列に複数個の前
記素子を挟んで配置された前記薄膜ヘッド素子と同様の
積層膜を備えた2個の擬似薄膜ヘッド素子を有する薄膜
磁気ヘッド・ウェハにおいて、前記2個の擬似薄膜ヘッ
ド素子の上部磁性膜を除去したことを特徴とする。
The present invention also provides a lower magnetic film, a lower insulating film,
Gap films, multiple layers of coils, upper insulating films, and upper magnetic films are sequentially laminated, and a plurality of thin film head elements are arranged in a matrix on a single wafer, and a plurality of thin film head elements are arranged in each row or each column. In a thin film magnetic head wafer having two pseudo thin film head elements having the same laminated film as the above thin film head elements arranged with the elements sandwiched therebetween, the upper magnetic films of the two pseudo thin film head elements were removed. It is characterized by

【0009】また本発明は、下部磁性膜,下部絶縁膜,
ギャップ膜,複数層のコイル,上部絶縁膜,上部磁性膜
を順次積層して、一枚のウェハ上に行列状に複数個の薄
膜ヘッド素子を配し、その各行または各列に複数個の前
記素子を挟んで配置された前記薄膜ヘッド素子と同様の
積層膜を備えた2個の擬似薄膜ヘッド素子を有する薄膜
磁気ヘッド・ウェハにおいて、前記2個の擬似薄膜ヘッ
ド素子の上部磁性膜を前記下部絶縁膜の外縁部が前記下
部磁性膜上を乗り越える位置から下部絶縁膜から遠ざか
る方向に後退させたことを特徴とする。
The present invention also provides a lower magnetic film, a lower insulating film,
Gap films, multiple layers of coils, upper insulating films, and upper magnetic films are sequentially laminated, and a plurality of thin film head elements are arranged in a matrix on a single wafer, and a plurality of thin film head elements are arranged in each row or each column. In a thin film magnetic head wafer having two pseudo thin film head elements having the same laminated film as the above thin film head elements sandwiched between the elements, the upper magnetic film of the two pseudo thin film head elements is replaced by the lower magnetic film. It is characterized in that the outer edge portion of the insulating film is made to recede in a direction away from the lower insulating film from a position where it crosses over the lower magnetic film.

【0010】さらに本発明は、下部磁性膜,下部絶縁
膜,ギャップ膜,複数層のコイル,上部絶縁膜,上部磁
性膜を順次積層して、一枚のウェハ上に行列状に複数個
の薄膜ヘッド素子を配し、その各行または各列に複数個
の前記素子を挟んで配置された前記薄膜ヘッド素子と同
様の積層膜を備えた2個の擬似薄膜ヘッド素子を有する
薄膜磁気ヘッド・ウェハにおいて、前記2個の擬似薄膜
ヘッド素子の上部磁性膜を前記下部絶縁膜の外縁部が前
記下部磁性膜上を乗り越える位置から両側に後退させた
ことを特徴とする。
Further, according to the present invention, a lower magnetic film, a lower insulating film, a gap film, a plurality of layers of coils, an upper insulating film and an upper magnetic film are sequentially laminated, and a plurality of thin films are formed in a matrix on a single wafer. A thin-film magnetic head wafer having two pseudo thin-film head elements, each having a head element and having a laminated film similar to the thin-film head element arranged in each row or each column with a plurality of the elements sandwiched therebetween. The upper magnetic films of the two pseudo thin film head elements are retreated to both sides from the position where the outer edge of the lower insulating film crosses over the lower magnetic film.

【0011】[0011]

【作用】本発明によれば、薄膜磁気ヘッドのポールハイ
トモニタを上下磁性膜の間のギャップ膜と絶縁膜をポー
ルハイト0部分だけ上部磁性膜をつけないことにより、
素子面からポールハイト0の検出を可能とする。
According to the present invention, in the pole height monitor of the thin film magnetic head, the gap film between the upper and lower magnetic films and the insulating film are not provided with the upper magnetic film only at the pole height 0 portion.
The pole height 0 can be detected from the element surface.

【0012】このためには薄膜磁気ヘッドにおいて、上
下の磁性膜と前記磁性膜の間の絶縁膜に包まれたコイル
から成るポールハイトモニタの0付近の上部磁性膜をな
くし、ギャップ膜と絶縁膜をむき出しにすることで素子
面からポールハイト0がどこか検出できる。
To this end, in the thin film magnetic head, the upper magnetic film near 0 of the pole height monitor composed of the coil surrounded by the upper and lower magnetic films and the insulating film between the magnetic films is eliminated to eliminate the gap film and the insulating film. By exposing, the pole height 0 can be detected from the element surface.

【0013】その結果、ポールハイト0の位置が直接検
出できるため、ポールハイトの制御が正確にできる。
As a result, since the position of the pole height 0 can be directly detected, the pole height can be accurately controlled.

【0014】[0014]

【実施例】次に本発明の実施例について図面を参照して
説明する。
Embodiments of the present invention will now be described with reference to the drawings.

【0015】図1(a)は本発明の第1の実施例を示す
平面図、及び図1(b)はA−A線拡大断面図であり、
一枚のウェハ上に行列状に並んだ複数個の薄膜ヘッド素
子を隔てて配置された2個の擬似薄膜ヘッド素子の1つ
を示している。
FIG. 1A is a plan view showing a first embodiment of the present invention, and FIG. 1B is an enlarged sectional view taken along line AA.
It shows one of two pseudo thin film head elements arranged on a single wafer with a plurality of thin film head elements arranged in a matrix form being separated from each other.

【0016】すなわち、下部磁性膜6,ギャップ膜1,
下部絶縁膜3,複数層のコイル,上部絶縁膜5,上部磁
性膜2と順次積層して一枚のウェハ上に行列状に複数個
の薄膜磁気ヘッド素子を配し、その各行または各列に複
数個の薄膜磁気ヘッドを素子を挟んで配置された薄膜磁
気ヘッド素子と同様の積層膜を備えた2個の擬似薄膜ヘ
ッド素子を有する薄膜ヘッド・ウェハにおいて、これら
2個の擬似薄膜ヘッド素子の上部磁性膜2を、下部絶縁
膜3の外縁部が下部磁性膜6上を乗り越える位置(図1
中のA点、以下A点と略す)から絶縁膜中心に後退して
いる構造を有している。
That is, the lower magnetic film 6, the gap film 1,
The lower insulating film 3, the plurality of layers of coils, the upper insulating film 5, and the upper magnetic film 2 are sequentially laminated, and a plurality of thin film magnetic head elements are arranged in a matrix on one wafer, and each row or each column thereof is arranged. In a thin film head wafer having two pseudo thin film head elements having a laminated film similar to the thin film magnetic head element in which a plurality of thin film magnetic heads are arranged with the elements sandwiched therebetween, A position where the outer edge of the lower insulating film 3 crosses over the upper magnetic film 2 over the lower magnetic film 6 (see FIG. 1).
It has a structure in which it recedes from the point A (abbreviated as point A in the following) to the center of the insulating film.

【0017】次にこの擬似薄膜ヘッド素子の製造方法を
説明する。
Next, a method of manufacturing this pseudo thin film head element will be described.

【0018】まず第1工程では、アルミナチタンカーバ
イト等のセラミック基盤上にメッキ導通用下地膜を10
00オングストローム形成し、その上に電気メッキ等に
よりパーマロイから成る下部磁性膜6をパターニングす
る。
First, in the first step, a plating conduction base film 10 is formed on a ceramic substrate such as alumina titanium carbide.
Then, the lower magnetic film 6 made of permalloy is patterned by electroplating or the like.

【0019】第2工程で、上部基盤全面に0.4μ程度
のギャップ膜1となるアルミナをスパッタする。
In the second step, about 0.4 .mu.m of alumina to be the gap film 1 is sputtered on the entire surface of the upper substrate.

【0020】第3工程で、フォトレジストをパターニン
グ後、200℃以上でベークし、3μ程度の下部絶縁膜
3をスパッタしたのち、パターンメッキによりコイル4
を形成し、その上にスパッタによって5μ程度上部絶縁
膜5を順次積層する。
In the third step, after patterning the photoresist, baking is performed at 200 ° C. or higher to sputter the lower insulating film 3 having a thickness of about 3 μ, and then the coil 4 is patterned by pattern plating.
Is formed, and an upper insulating film 5 having a thickness of about 5 μ is sequentially laminated thereon by sputtering.

【0021】以上の工程は薄膜ヘッド素子と同時に形成
されるわけであるが、次に積層する上部磁性膜2の形成
において、薄膜ヘッド素子と擬似薄膜ヘッド素子とで異
なった形状を形成する。
Although the above steps are formed simultaneously with the thin film head element, different shapes are formed in the thin film head element and the pseudo thin film head element in the formation of the upper magnetic film 2 to be laminated next.

【0022】この実施例では、下部絶縁膜3の外縁部が
下部磁性膜6を乗り越える位置であるA点を覆わない絶
縁膜中心方向に、前述の下部磁性膜6と同様な手法によ
り、上部磁性膜2を形成する。
In this embodiment, the upper magnetic layer is formed in the same manner as the lower magnetic film 6 in the direction toward the center of the insulating film which does not cover the point A where the outer edge of the lower insulating film 3 crosses over the lower magnetic film 6. The film 2 is formed.

【0023】図2に第2の実施例を示す。図2(a)は
平面図、図2(b)はB−B線断面図である。本実施例
は、第1の実施例の薄膜磁気ヘッド・ウェハにおいて、
2個の擬似薄膜ヘッド素子の上部磁性膜2を除去した構
造を有している。このように本実施例では、上部磁性膜
2をまったく形成しないことで前述のA点を露出させて
いる。
FIG. 2 shows a second embodiment. 2A is a plan view and FIG. 2B is a sectional view taken along line BB. In this embodiment, the thin-film magnetic head wafer of the first embodiment is
It has a structure in which the upper magnetic film 2 of the two pseudo thin film head elements is removed. As described above, in this embodiment, the point A is exposed by not forming the upper magnetic film 2 at all.

【0024】図3に第3の実施例を示す。図3(a)は
平面図、図3(b)はC−C線断面図である。本実施例
は、2個の擬似薄膜ヘッド素子の上部磁性膜2を下部絶
縁膜3の外縁部が下部磁性膜上を乗り越える位置(A
点)から絶縁膜中心より後退させる構造を有している。
このように本実施例ではA点を覆わないように下部磁性
膜6上の下部絶縁膜3の形成していない先端部のみに上
部磁性膜2を形成する。
FIG. 3 shows a third embodiment. FIG. 3A is a plan view and FIG. 3B is a sectional view taken along the line CC. In this embodiment, a position (A) where the outer edge portion of the lower insulating film 3 crosses over the upper magnetic film 2 of the two pseudo thin film head elements (A
It has a structure in which it recedes from the center of the insulating film from the point).
As described above, in the present embodiment, the upper magnetic film 2 is formed only on the tip portion where the lower insulating film 3 is not formed on the lower magnetic film 6 so as not to cover the point A.

【0025】図4に第4の実施例を示す。図4(a)は
平面図、図4(b)はD−D線断面図である。本実施例
は、2個の擬似薄膜ヘッド素子の上部磁性膜2を下部絶
縁膜3の外縁部が下部磁性膜6上を乗り越える位置から
両側に後退させた構造を有している。このように本実施
例では第1の実施例と第3の実施例を組み合わせた形に
上部磁性膜2を形成する以上説明した第1〜第4の実施
例の擬似薄膜ヘッド素子では、平面図において図5の薄
膜ヘッド素子で見れなかったA部すなわちポールハイト
「0」部を直接見ることができる。
FIG. 4 shows a fourth embodiment. FIG. 4A is a plan view and FIG. 4B is a sectional view taken along the line DD. This embodiment has a structure in which the upper magnetic film 2 of the two pseudo thin film head elements is set back to both sides from the position where the outer edge of the lower insulating film 3 crosses over the lower magnetic film 6. As described above, in the present embodiment, the upper magnetic film 2 is formed in a combination of the first embodiment and the third embodiment. In the pseudo thin film head elements of the first to fourth embodiments described above, plan views are shown. In FIG. 5, it is possible to directly see the portion A which is not seen in the thin film head element of FIG.

【0026】従ってこの後、機械加工において列状に切
断し、研削及びラップ加工する時、2箇所の擬似薄膜ヘ
ッド素子部分でポールハイト「0」を直接検出できるた
め正確なポールハイトを精度よく制御できることにな
る。
Therefore, after that, when cutting, grinding and lapping in rows in the machining process, the pole height "0" can be directly detected at the two pseudo thin film head element portions, so that the accurate pole height can be controlled accurately. You can do it.

【0027】なお、擬似薄膜ヘッド素子を1列に2個ま
たは数個配設しても、通常スライダ1個当り2個の薄膜
ヘッド素子を持っており、そのうち電磁変換に利用する
素子は1個だけなので、生産性及び歩留まりを低下させ
ることはない。
Even if two or several pseudo thin film head elements are arranged in one row, each slider usually has two thin film head elements, one of which is used for electromagnetic conversion. Therefore, the productivity and the yield are not reduced.

【0028】[0028]

【発明の効果】以上説明したように本発明は、上部磁性
膜を下部絶縁膜よりも小さくすることにより、素子面か
ら真のポールハイト「0」を直接検出できることによっ
て、限りなく「0」に近いポールハイト量を精度よく制
御できる効果がある。
As described above, according to the present invention, by making the upper magnetic film smaller than the lower insulating film, the true pole height "0" can be directly detected from the element surface, so that it becomes infinite "0". This has the effect of accurately controlling the close pole height amount.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の第1実施例の平面図及び断面図であ
る。
FIG. 1 is a plan view and a sectional view of a first embodiment of the present invention.

【図2】本発明の第2実施例の平面図及び断面図であ
る。
FIG. 2 is a plan view and a sectional view of a second embodiment of the present invention.

【図3】本発明の第3実施例の平面図及び断面図であ
る。
FIG. 3 is a plan view and a sectional view of a third embodiment of the present invention.

【図4】本発明の第4実施例の平面図及び断面図であ
る。
FIG. 4 is a plan view and a sectional view of a fourth embodiment of the present invention.

【図5】従来例を表す平面図及び断面図である。5A and 5B are a plan view and a cross-sectional view showing a conventional example.

【符号の説明】[Explanation of symbols]

1 ギャップ膜 2 上部磁性膜 3 下部絶縁膜 4 コイル 5 上部絶縁膜 6 下部磁性膜 1 Gap film 2 Upper magnetic film 3 Lower insulating film 4 coils 5 Upper insulating film 6 Lower magnetic film

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】下部磁性膜,下部絶縁膜,ギャップ膜,複
数層のコイル,上部絶縁膜,上部磁性膜を順次積層し
て、一枚のウェハ上に行列状に複数個の薄膜ヘッド素子
を配し、その各行または各列に複数個の前記素子を挟ん
で配置された前記薄膜ヘッド素子と同様の積層膜を備え
た2個の擬似薄膜ヘッド素子を有する薄膜磁気ヘッド・
ウェハにおいて、 前記2個の擬似薄膜ヘッド素子の上部磁性膜を前記下部
絶縁膜の外縁部が前記下部磁性膜上を乗り越える位置か
ら絶縁膜中心方向に後退させたことを特徴とする薄膜磁
気ヘッド・ウェハ。
1. A lower magnetic film, a lower insulating film, a gap film, a plurality of layers of coils, an upper insulating film and an upper magnetic film are sequentially laminated to form a plurality of thin film head elements in a matrix on a single wafer. A thin-film magnetic head having two pseudo thin-film head elements having the same laminated film as the thin-film head element arranged in each row or each column with a plurality of the elements sandwiched therebetween.
In the wafer, a thin film magnetic head characterized in that the upper magnetic films of the two pseudo thin film head elements are made to recede toward the center of the insulating film from the position where the outer edge of the lower insulating film crosses over the lower magnetic film. Wafer.
【請求項2】下部磁性膜,下部絶縁膜,ギャップ膜,複
数層のコイル,上部絶縁膜,上部磁性膜を順次積層し
て、一枚のウェハ上に行列状に複数個の薄膜ヘッド素子
を配し、その各行または各列に複数個の前記素子を挟ん
で配置された前記薄膜ヘッド素子と同様の積層膜を備え
た2個の擬似薄膜ヘッド素子を有する薄膜磁気ヘッド・
ウェハにおいて、 前記2個の擬似薄膜ヘッド素子の上部磁性膜を除去した
ことを特徴とする薄膜磁気ヘッド・ウェハ。
2. A lower magnetic film, a lower insulating film, a gap film, a plurality of layers of coils, an upper insulating film, and an upper magnetic film are sequentially laminated to form a plurality of thin film head elements in a matrix on one wafer. A thin-film magnetic head having two pseudo thin-film head elements having the same laminated film as the thin-film head element arranged in each row or each column with a plurality of the elements sandwiched therebetween.
A thin film magnetic head wafer, wherein the upper magnetic films of the two pseudo thin film head elements are removed from the wafer.
【請求項3】下部磁性膜,下部絶縁膜,ギャップ膜,複
数層のコイル,上部絶縁膜,上部磁性膜を順次積層し
て、一枚のウェハ上に行列状に複数個の薄膜ヘッド素子
を配し、その各行または各列に複数個の前記素子を挟ん
で配置された前記薄膜ヘッド素子と同様の積層膜を備え
た2個の擬似薄膜ヘッド素子を有する薄膜磁気ヘッド・
ウェハにおいて、 前記2個の擬似薄膜ヘッド素子の上部磁性膜を前記下部
絶縁膜の外縁部が前記下部磁性膜上を乗り越える位置か
ら下部絶縁膜から遠ざかる方向に後退させたことを特徴
とする薄膜磁気ヘッド・ウェハ。
3. A lower magnetic film, a lower insulating film, a gap film, a plurality of layers of coils, an upper insulating film and an upper magnetic film are sequentially laminated to form a plurality of thin film head elements in a matrix on a single wafer. A thin-film magnetic head having two pseudo-thin-film head elements, each of which has a laminated film similar to the thin-film head element arranged in each row or each column with a plurality of the elements sandwiched therebetween.
In the wafer, the upper magnetic films of the two pseudo thin film head elements are made to recede in a direction away from the lower insulating film from the position where the outer edge of the lower insulating film crosses over the lower magnetic film. Head wafer.
【請求項4】下部磁性膜,下部絶縁膜,ギャップ膜,複
数層のコイル,上部絶縁膜,上部磁性膜を順次積層し
て、一枚のウェハ上に行列状に複数個の薄膜ヘッド素子
を配し、その各行または各列に複数個の前記素子を挟ん
で配置された前記薄膜ヘッド素子と同様の積層膜を備え
た2個の擬似薄膜ヘッド素子を有する薄膜磁気ヘッド・
ウェハにおいて、 前記2個の擬似薄膜ヘッド素子の上部磁性膜を前記下部
絶縁膜の外縁部が前記下部磁性膜上を乗り越える位置か
ら両側に後退させたことを特徴とする薄膜磁気ヘッド・
ウェハ。
4. A lower magnetic film, a lower insulating film, a gap film, a plurality of layers of coils, an upper insulating film and an upper magnetic film are sequentially laminated to form a plurality of thin film head elements in a matrix on a single wafer. A thin-film magnetic head having two pseudo thin-film head elements having the same laminated film as the thin-film head element arranged in each row or each column with a plurality of the elements sandwiched therebetween.
In the wafer, a thin film magnetic head characterized in that the upper magnetic films of the two pseudo thin film head elements are receded to both sides from the position where the outer edge portion of the lower insulating film crosses over the lower magnetic film.
Wafer.
JP16853491A 1991-07-10 1991-07-10 Thin-film magnetic head wafer Pending JPH0520634A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16853491A JPH0520634A (en) 1991-07-10 1991-07-10 Thin-film magnetic head wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16853491A JPH0520634A (en) 1991-07-10 1991-07-10 Thin-film magnetic head wafer

Publications (1)

Publication Number Publication Date
JPH0520634A true JPH0520634A (en) 1993-01-29

Family

ID=15869807

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16853491A Pending JPH0520634A (en) 1991-07-10 1991-07-10 Thin-film magnetic head wafer

Country Status (1)

Country Link
JP (1) JPH0520634A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06301929A (en) * 1993-04-13 1994-10-28 Fuji Elelctrochem Co Ltd Thin film magnetic head and its manufacture

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61227211A (en) * 1985-03-29 1986-10-09 Fujitsu Ltd Manufacture of thin film magnetic head

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61227211A (en) * 1985-03-29 1986-10-09 Fujitsu Ltd Manufacture of thin film magnetic head

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06301929A (en) * 1993-04-13 1994-10-28 Fuji Elelctrochem Co Ltd Thin film magnetic head and its manufacture

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