JPH05198551A - Wafer drying equipment - Google Patents

Wafer drying equipment

Info

Publication number
JPH05198551A
JPH05198551A JP3143192A JP3143192A JPH05198551A JP H05198551 A JPH05198551 A JP H05198551A JP 3143192 A JP3143192 A JP 3143192A JP 3143192 A JP3143192 A JP 3143192A JP H05198551 A JPH05198551 A JP H05198551A
Authority
JP
Japan
Prior art keywords
wafer
wall surface
cleaning
cleaning chamber
liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3143192A
Other languages
Japanese (ja)
Other versions
JP3191379B2 (en
Inventor
Yasushi Inagaki
靖史 稲垣
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP03143192A priority Critical patent/JP3191379B2/en
Publication of JPH05198551A publication Critical patent/JPH05198551A/en
Application granted granted Critical
Publication of JP3191379B2 publication Critical patent/JP3191379B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PURPOSE:To prevent dust discharged from the surface of a cleaned wafer from building up on the inner wall of a cleaning chamber and protect the surface of the wafer from contamination produced by the dust which builds on the cleaned surface of the wafer once again by installing a wall surface cleaning means which forces a wall surface cleaning soluton to flow down on the entire inner wall surface of the cleaning chamber. CONSTITUTION:A wall surface cleaning means 5 which supplies a cleaning solution 6 in such a fashion that the cleaning solution may flow down on the entire inner wall surface 2, comprises a pipeline formed in the shape of a ring. The pipeline is provided with a large number of liquid spray nozzles directed downward on the slant. The cleaning solution 6 is supplied so as to clean the inner wall surface 2 during the operation of a wafer drying equipment. The cleaning solution 6 is supplied in such a fshion that the solution may flow along the inner wall surface from the top to the bottom and no cleaning solution may be splashed on the inner wall surface 2. This construction makes it possible to clean without splash and eliminate the troubles that no dust from the wafer is deposited on the inner wall surface of the cleanin chamber, thereby minimizing the contamination of wafers.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、ウェハ乾燥装置、特に
ウェハを装着するウェハ装着部を有する洗浄室内に洗浄
液を注入して該ウェハ装着部に装着されたウェハを洗浄
し、該ウェハ装着部を回転させることにより該ウェハを
遠心力により乾燥するウェハ乾燥装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer drying apparatus, and more particularly, to inject a cleaning liquid into a cleaning chamber having a wafer mounting portion for mounting a wafer to clean the wafer mounted on the wafer mounting portion, The present invention relates to a wafer drying device that rotates a wafer by centrifugal force to dry the wafer.

【0002】[0002]

【従来の技術】半導体装置の製造において、一つの処理
を終え次の処理を始める前に半導体ウェハをきれいに洗
浄し、その後乾燥することが必要となる場合が多い。そ
のような半導体ウェハの洗浄及び乾燥には、ウェハを装
着するウェハ装着部を有する洗浄室内に洗浄液を注入し
て該ウェハ装着部に装着されたウェハを洗浄し、該ウェ
ハ装着部を回転させることにより該ウェハを遠心力によ
り乾燥するウェハ乾燥装置が用いられる。
2. Description of the Related Art In the manufacture of semiconductor devices, it is often necessary to clean a semiconductor wafer before finishing one treatment and then drying it. For cleaning and drying such a semiconductor wafer, a cleaning liquid is injected into a cleaning chamber having a wafer mounting portion for mounting the wafer to clean the wafer mounted on the wafer mounting portion, and the wafer mounting portion is rotated. Therefore, a wafer drying device for drying the wafer by centrifugal force is used.

【0003】図4はそのようなウェハ乾燥装置の一つの
従来例を示すものであり、図5は別の従来例を示すもの
である。図面において、aは洗浄室b内に回転可能に設
けられたウェハ装着部、cは蓋、dは洗浄室bの内壁面
eへ洗浄液を噴出するシャワー(図5の装置にのみあ
る)である。図4に示すウェハ乾燥装置は、洗浄室b内
部へ上側から半導体ウェハ洗浄用洗浄液を供給してウェ
ハ装着部aに装着された半導体ウェハを洗浄し、その
後、ウェハ装着部aを回転させることにより遠心力で洗
浄液を切り、半導体ウェハを乾燥するようにしたもので
ある。また、図5に示すウェハ乾燥装置は、一般にウェ
ハ乾燥装置に、洗浄室b内に洗浄室Bの内壁面eに洗浄
液を噴出するシャワーdを付加し、内壁面eに付着した
汚れその他の不純物を除去できるようにしたものであ
る。
FIG. 4 shows one conventional example of such a wafer drying apparatus, and FIG. 5 shows another conventional example. In the drawing, a is a wafer mounting portion rotatably provided in the cleaning chamber b, c is a lid, and d is a shower (only in the apparatus of FIG. 5) for ejecting the cleaning liquid to the inner wall surface e of the cleaning chamber b. . The wafer drying apparatus shown in FIG. 4 supplies the cleaning liquid for cleaning the semiconductor wafer into the cleaning chamber b from above to clean the semiconductor wafer mounted on the wafer mounting portion a, and then rotates the wafer mounting portion a. The cleaning liquid is removed by centrifugal force to dry the semiconductor wafer. In addition, the wafer drying apparatus shown in FIG. 5 is generally a wafer drying apparatus in which a shower d for spraying a cleaning liquid is added to the inner wall surface e of the cleaning chamber B in the cleaning chamber b so that dirt and other impurities attached to the inner wall surface e. Is designed to be removed.

【0004】[0004]

【発明が解決しようとする課題】ところで、図4に示す
従来のウェハ乾燥装置によれば、洗浄室b内への洗浄液
の注入を終えてウェハ装着部aを回転して乾燥をしてい
るときに半導体ウェハ自身やウェハ装着部のダストが遠
心力によって飛散して洗浄室bの内壁面eに付着し、ま
た、半導体ウェハ自身を洗浄した洗浄液も遠心力によっ
て内壁面eに飛散しそこではね返って再び半導体ウェハ
上に戻るので、はね返ったときに洗浄室b内壁面e上の
ダストがその洗浄液に混ざったり、洗浄室b内に舞い上
がったりするのでそのダストが半導体ウェハの表面に再
付着するという問題があった。
By the way, according to the conventional wafer drying apparatus shown in FIG. 4, when the wafer mounting portion a is rotated and dried after the injection of the cleaning liquid into the cleaning chamber b is completed. In addition, the dust on the semiconductor wafer itself and the wafer mounting portion is scattered by the centrifugal force and adheres to the inner wall surface e of the cleaning chamber b, and the cleaning liquid for cleaning the semiconductor wafer itself is also scattered on the inner wall surface e by the centrifugal force and splashes there. Since it returns to the semiconductor wafer again, the dust on the inner wall surface e of the cleaning chamber b mixes with the cleaning liquid or rises up inside the cleaning chamber b when it rebounds, so that the dust reattaches to the surface of the semiconductor wafer. was there.

【0005】そして、その洗浄室b内壁面eに付着する
ダストの量は、ウェハ乾燥装置によって洗浄と乾燥を繰
返すに伴って増加する。従って、頻繁に洗浄室bの内壁
面eを洗浄しないと、半導体ウェハの汚染度を低下させ
ることができず、延いては半導体装置の品質、信頼度の
向上を図ることができない。しかし、頻繁にウェハ乾燥
装置内部の洗浄をすることはメンテナンスコストの増加
を招くので半導体装置の低コスト化を阻む要因となり好
ましくない。従って、その問題は看過できない。
The amount of dust adhering to the inner wall surface e of the cleaning chamber b increases as cleaning and drying are repeated by the wafer dryer. Therefore, unless the inner wall surface e of the cleaning chamber b is frequently cleaned, the degree of contamination of the semiconductor wafer cannot be reduced, and thus the quality and reliability of the semiconductor device cannot be improved. However, frequent cleaning of the inside of the wafer drying device causes an increase in maintenance cost, which is a factor that hinders cost reduction of the semiconductor device and is not preferable. Therefore, the problem cannot be overlooked.

【0006】そこで、図5に示すウェハ乾燥装置のよう
に、洗浄室bの内壁面eに壁面洗浄液(例えば氷)を噴
出するシャワーdを設け、内壁面eを洗浄するようにす
ることも行われているのである。しかし、これによって
も本問題を根本的に解決することができなかった。とい
うのは、シャワーdの配管部にウェハやウェハ装着部a
からのダストが付着し、蓄積し、半導体ウェハ表面に汚
染する汚染源になるという問題が新たに起き、また、シ
ャワーdから噴出した壁面洗浄液が洗浄室bの内壁面e
で半導体ウェハ側にはね返り、その結果、内壁面e上の
ダストがその壁面洗浄液によって洗浄室b内を舞い上が
ったり、壁面洗浄液に混って半導体ウェハに直接付着し
たりするからである。
Therefore, as in the wafer drying apparatus shown in FIG. 5, a shower d for ejecting a wall surface cleaning liquid (for example, ice) may be provided on the inner wall surface e of the cleaning chamber b to clean the inner wall surface e. It is being said. However, even this has not been able to fundamentally solve this problem. This is because the wafer and wafer mounting part a are attached to the piping part of the shower d.
A new problem arises that dust from the surface of the cleaning chamber b adheres, accumulates, and becomes a pollution source that contaminates the surface of the semiconductor wafer.
This is because it bounces back to the semiconductor wafer side, and as a result, the dust on the inner wall surface e rises up in the cleaning chamber b by the wall surface cleaning liquid or mixes with the wall surface cleaning liquid and directly adheres to the semiconductor wafer.

【0007】本発明はこのような問題点を解決すべく為
されたものであり、被洗浄ウェハ表面からのダストが洗
浄室内壁面に付着しそれが再びウェハ表面に付着して汚
染することを防止することを目的とする。
The present invention has been made to solve such a problem, and prevents dust from the surface of the wafer to be cleaned from adhering to the inner wall surface of the cleaning chamber and again adhering to the surface of the wafer and contaminating it. The purpose is to

【0008】[0008]

【課題を解決するための手段】請求項1のウェハ乾燥装
置は、洗浄室の内壁面全面に壁面洗浄液を流下させる壁
面洗浄手段を設けたことを特徴とする。請求項2のウェ
ハ乾燥装置は、ウェハ装着部と上記洗浄室の内壁面との
間に液カーテンを形成する液カーテン形成手段を設けた
ことを特徴とする。
According to a first aspect of the present invention, there is provided a wafer drying device characterized in that wall cleaning means for causing a wall cleaning liquid to flow down is provided on the entire inner wall surface of a cleaning chamber. According to another aspect of the wafer drying apparatus of the present invention, a liquid curtain forming means for forming a liquid curtain is provided between the wafer mounting portion and the inner wall surface of the cleaning chamber.

【0009】[0009]

【作用】請求項1のウェハ乾燥装置によれば、洗浄室の
内壁面全面に壁面洗浄液を流下させるので、それによっ
て洗浄室内壁面全面をはね返りを伴うことなく洗浄でき
る。従って、洗浄室内壁面にウェハからのダストが蓄積
する虞れがなくなり、ウェハの汚染を少なくすることが
でき、また、洗浄室内壁面を洗浄する特別の作業が不要
となるのでメンテナンスコストが低下する。
According to the wafer drying apparatus of the first aspect, since the wall surface cleaning liquid is made to flow down on the entire inner wall surface of the cleaning chamber, the entire wall surface of the cleaning chamber can be cleaned without splashing. Therefore, there is no fear that dust from the wafer will be accumulated on the inner wall surface of the cleaning chamber, the contamination of the wafer can be reduced, and a special operation for cleaning the inner wall surface of the cleaning chamber is not required, so that the maintenance cost is reduced.

【0010】請求項2のウェハ乾燥装置によれば、ウェ
ハ装着部のまわりに液カーテンができるのでウェハ装着
部回転時にウェハから周囲に飛散したダストが液カーテ
ンに捕捉されるし、また、液カーテンを通過して洗浄室
内壁面に達したダストがあってもそれが洗浄室内壁面で
はね返ってウェハ装着部に戻ることを液カーテンによっ
て阻むことができる。従って、請求項1のウェハ乾燥装
置と同様に、ウェハの汚染度の低減を図ることができ、
洗浄室内壁面を洗浄する特別の作業が不要となるのでメ
ンテナンスコストが低下する。
According to the wafer drying device of the second aspect, since the liquid curtain is formed around the wafer mounting portion, dust scattered around the wafer when the wafer mounting portion is rotated is captured by the liquid curtain, and the liquid curtain is also provided. Even if there is dust that has passed through the cleaning chamber and has reached the wall surface of the cleaning chamber, the liquid curtain can prevent the dust from bouncing back on the wall surface of the cleaning chamber and returning to the wafer mounting portion. Therefore, the contamination degree of the wafer can be reduced as in the wafer drying apparatus according to claim 1.
Maintenance work is reduced because no special work is required to wash the inner wall of the washing room.

【0011】[0011]

【実施例】以下、本発明ウェハ乾燥装置を図示実施例に
従って詳細に説明する。図1は本発明ウェハ乾燥装置の
一つの実施例を示す断面図である。図面において、1は
洗浄室、2は該洗浄室1の内壁面、3は洗浄室1内部に
回転可能に設けられたウェハ装着部で、該ウェハ装着部
3に図示しない半導体ウェハが装着される。4は蓋であ
る。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The wafer drying apparatus of the present invention will be described in detail below with reference to the illustrated embodiments. FIG. 1 is a sectional view showing one embodiment of the wafer drying apparatus of the present invention. In the drawings, 1 is a cleaning chamber, 2 is an inner wall surface of the cleaning chamber 1, and 3 is a wafer mounting portion rotatably provided inside the cleaning chamber 1. A semiconductor wafer (not shown) is mounted on the wafer mounting portion 3. .. 4 is a lid.

【0012】5は洗浄液6を洗浄室1の内壁面2全面を
流下するように供給する壁面洗浄手段で、環状に形成さ
れた配管からなり、該配管は斜め外下側を向いた液噴出
口を多数有する。該壁面洗浄手段5は、ウェハ乾燥装置
の使用中常に、又は例えば乾燥時あるいは待機時という
特定の時のみに、洗浄液6を供給して内壁面2洗浄を行
う。該壁面洗浄手段5による洗浄液6の供給は、内壁面
2に沿って略上端から下向きに流れるように行い、内壁
面2で洗浄液6がはねないようにすることが必要であ
る。
Reference numeral 5 is a wall surface cleaning means for supplying the cleaning liquid 6 so as to flow down the entire inner wall surface 2 of the cleaning chamber 1. The wall cleaning means 5 is composed of a pipe formed in an annular shape, and the pipe is a liquid jet port directed obliquely downward and outward. Have many. The wall surface cleaning means 5 supplies the cleaning liquid 6 to clean the inner wall surface 2 at all times during use of the wafer drying apparatus or only at a specific time such as drying or standby. It is necessary that the cleaning liquid 6 is supplied by the wall surface cleaning means 5 so as to flow downward along the inner wall surface 2 from a substantially upper end so that the cleaning liquid 6 does not splash on the inner wall surface 2.

【0013】このようにすれば、半導体ウェハを洗浄下
洗浄液7がウェハ装着部3の回転による遠心力によって
飛散してその中のダストが洗浄室1内壁面2に付着して
も、そのダストが壁面洗浄手段5により供給された洗浄
液6により洗い流されるようにできる。従って、洗浄室
内壁面にウェハからのダストが蓄積する虞れがなくな
り、ウェハの汚染を少なくすることができ、また、洗浄
室内壁面を洗浄する特別の作業が不要となるのでメンテ
ナンスコストが低下する。尚、洗浄液としての純水の中
に活性剤を加えたものを壁面洗浄液6として供給するよ
うにしているが、これは内壁面2の洗浄効果を高めるた
めである。
In this way, even if the cleaning liquid 7 for cleaning the semiconductor wafer is scattered by the centrifugal force due to the rotation of the wafer mounting portion 3 and the dust therein adheres to the inner wall surface 2 of the cleaning chamber 1, the dust remains. It can be washed away by the cleaning liquid 6 supplied by the wall surface cleaning means 5. Therefore, there is no fear that dust from the wafer will be accumulated on the inner wall surface of the cleaning chamber, the contamination of the wafer can be reduced, and a special operation for cleaning the inner wall surface of the cleaning chamber is not required, so that the maintenance cost is reduced. It should be noted that pure water as a cleaning liquid, to which an activator is added, is supplied as the wall surface cleaning liquid 6 for the purpose of enhancing the cleaning effect on the inner wall surface 2.

【0014】また、洗浄室1内壁面2は純水等壁面洗浄
液との濡れ性の材料で形成することより半導体ウェハの
汚染防止効果を高めることができる。というのは、濡れ
性が良いと全面的にもれなく壁面洗浄液でシールする
(覆う)ことが容易となるからである。僅かでも壁面洗
浄液のシールに洩れがあるとそこでダストがはね返る可
能性があるから、濡れ性を良くすることにより洩れない
ようにすることは好ましいことである。そして、具体的
には、純水からなる洗浄液に活性剤や親水性溶剤(アル
コール等)を添加すると内壁面2への洗浄液の濡れ性が
良くなる。
Further, since the inner wall surface 2 of the cleaning chamber 1 is made of a material having wettability with the wall surface cleaning liquid such as pure water, the effect of preventing contamination of the semiconductor wafer can be enhanced. This is because if the wettability is good, it will be easy to seal (cover) the wall surface cleaning liquid without omission. It is preferable to improve the wettability so as to prevent the dust from splashing even if the seal of the wall surface cleaning liquid leaks even if only a small amount. Then, specifically, when an activator or a hydrophilic solvent (alcohol, etc.) is added to the cleaning liquid composed of pure water, the wettability of the cleaning liquid on the inner wall surface 2 is improved.

【0015】図2(A)、(B)は図1のウェハ乾燥装
置の各別の変形例を示すものである。図2(A)に示す
ウェハ乾燥装置は、内壁面2の上部に内壁面2に開口す
る孔8を多数設け、該孔8を通して洗浄室1内壁面2を
流下する壁面洗浄液6を供給するようにしたものであ
る。
2 (A) and 2 (B) show different modifications of the wafer drying apparatus of FIG. In the wafer drying apparatus shown in FIG. 2 (A), a large number of holes 8 that open to the inner wall surface 2 are provided in the upper portion of the inner wall surface 2, and the wall surface cleaning liquid 6 that flows down the inner wall surface 2 of the cleaning chamber 1 is supplied through the holes 8. It is the one.

【0016】尚、内壁面2の上部にリング状に溝を設
け、該溝の底面に開口する孔を多数設けて該孔から壁面
洗浄液6を供給するようにしても良い。この場合、溝は
洗浄液を水平方向に広げる役割を果し、内壁面2を洩れ
なく流液が流下できるようにする。かかる効果を高める
ために、孔の向きを横断面円形の内壁面2の接線方向あ
るいはそれに近い向きにするようにすることも考えられ
る。
A ring-shaped groove may be provided in the upper portion of the inner wall surface 2 and a large number of holes opening at the bottom surface of the groove may be provided to supply the wall surface cleaning liquid 6 from the holes. In this case, the groove plays the role of spreading the cleaning liquid in the horizontal direction, and allows the flowing liquid to flow down the inner wall surface 2 without leaking. In order to enhance such an effect, it may be considered that the holes are oriented in a tangential direction of the inner wall surface 2 having a circular cross section or a direction close thereto.

【0017】図2(B)に示すウェハ乾燥装置は、洗浄
液6が内壁面2表面のダストをより確実に流すことがで
きるようにするために、内壁面2表面を下に行くに従っ
て縮径するように傾斜させたものである。尚、このよう
に内壁面2表面を傾斜させる技術は図1に示すように洗
浄液を供給するウェハ乾燥装置と図2に示すように洗浄
液を供給するウェハ乾燥装置のいずれにも適用すること
ができる。
In the wafer drying apparatus shown in FIG. 2B, the diameter of the inner wall surface 2 is reduced as it goes downward so that the cleaning liquid 6 can more reliably flow the dust on the surface of the inner wall surface 2. It is a slanted one. The technique of inclining the surface of the inner wall surface 2 as described above can be applied to both a wafer drying device that supplies a cleaning liquid as shown in FIG. 1 and a wafer drying device that supplies a cleaning liquid as shown in FIG. .

【0018】図3は本発明ウェハ乾燥装置の別の実施例
を示す断面図である。本実施例は、洗浄室1内のウェハ
装着部3と内壁面2との間に、水等の液体からなる液カ
ーテン9を形成する液カーテン形成手段10を設けてな
るものである。この液カーテン9は、筒状を成してウェ
ハ装着部3と内壁面2との間を遮るように形成される
が、滝のようなカーテンであっても良いし、噴霧状のカ
ーテンであっても良い。
FIG. 3 is a sectional view showing another embodiment of the wafer drying apparatus of the present invention. In this embodiment, a liquid curtain forming means 10 for forming a liquid curtain 9 made of a liquid such as water is provided between the wafer mounting portion 3 and the inner wall surface 2 in the cleaning chamber 1. The liquid curtain 9 is formed in a tubular shape so as to block the space between the wafer mounting portion 3 and the inner wall surface 2, but may be a waterfall-like curtain or a spray-like curtain. May be.

【0019】このようなウェハ乾燥装置によれば、ウェ
ハ装着部3のまわりに液カーテン9ができるのでウェハ
装着部3回転時にウェハから周囲に飛散したダストが液
カーテンに捕捉されるし、また、液カーテン9を通過し
て洗浄室1内壁面2に達したダストがあってもそれが洗
浄室1内壁面2ではね返ってウェハ装着部3に戻ること
を液カーテン9によって阻むことができる。従って、図
1、図2(A)、(B)のウェハ乾燥装置と同様に、ウ
ェハの汚染度の低減を図ることができ、洗浄室内壁面を
洗浄する特別の作業が不要となるのでメンテナンスコス
トが低下する。尚、図1乃至図2に示すように内壁面2
を洗浄することと図3に示すように液カーテンを形成す
ることの両方を一つのウェハ乾燥装置において行うよう
にしても良い。
According to such a wafer drying apparatus, since the liquid curtain 9 is formed around the wafer mounting portion 3, dust scattered around the wafer when the wafer mounting portion 3 rotates is captured by the liquid curtain. Even if there is dust that has passed through the liquid curtain 9 and reached the inner wall surface 2 of the cleaning chamber 1, the liquid curtain 9 can prevent the dust from bouncing back on the inner wall surface 2 of the cleaning chamber 1 and returning to the wafer mounting portion 3. Therefore, similar to the wafer drying apparatus of FIGS. 1, 2A, and 2B, the degree of contamination of the wafer can be reduced, and a special operation for cleaning the inner wall surface of the cleaning chamber is not required, so that the maintenance cost can be reduced. Is reduced. As shown in FIGS. 1 and 2, the inner wall surface 2
Both the cleaning of the wafer and the formation of the liquid curtain as shown in FIG. 3 may be performed in one wafer dryer.

【0020】ところで、壁面洗浄液の供給、液カーテン
の形成は常時行うようにしても良いし、特定の時のみ行
うようにしても良いが、しかし、常時行う方が内壁面2
の帯電(ウェハ装着部回転等による帯電)防止効果があ
るので、ダストの帯電による付着を防止する効果がより
高まるからより好ましい。
By the way, the supply of the wall surface cleaning liquid and the formation of the liquid curtain may be always carried out or may be carried out only at a specific time.
This is more preferable because it has the effect of preventing the charging (charging due to the rotation of the wafer mounting portion) and the like, and the effect of preventing the adhesion due to the charging of dust is further enhanced.

【0021】[0021]

【発明の効果】請求項1のウェハ乾燥装置は、洗浄室の
内壁面全面に壁面洗浄液を流下させる壁面洗浄手段を有
することを特徴とするものである。従って、請求項1の
ウェハ乾燥装置によれば、洗浄室の内壁面全面に壁面洗
浄液を流下させるので、それによって洗浄室内壁面全面
をはね返りを伴うことなく洗浄できる。依って、洗浄室
内壁面にウェハからのダストが蓄積する虞れがなくな
り、ウェハの汚染を少なくすることができ、また、洗浄
室内壁面を洗浄する特別の作業が不要となるのでメンテ
ナンスコストが低下する。
According to the first aspect of the present invention, there is provided the wafer drying apparatus having wall surface cleaning means for flowing down the wall surface cleaning liquid over the entire inner wall surface of the cleaning chamber. Therefore, according to the wafer drying apparatus of the first aspect, since the wall surface cleaning liquid is made to flow down on the entire inner wall surface of the cleaning chamber, the entire wall surface of the cleaning chamber can be cleaned without splashing. As a result, there is no risk of dust from the wafers accumulating on the inner wall surface of the cleaning chamber, the contamination of the wafer can be reduced, and a special operation for cleaning the inner wall surface of the cleaning chamber is not required, which reduces maintenance costs. ..

【0022】請求項2のウェハ乾燥装置は、ウェハ装着
部と上記洗浄室の内壁面との間に液カーテンを形成する
液カーテン形成手段を有することを特徴とするものであ
る。従って、請求項2のウェハ乾燥装置によれば、ウェ
ハ装着部のまわりに液カーテンができるので、ウェハ装
着部回転時にウェハから周囲に飛散したダストが液カー
テンに捕捉されるし、また、液カーテンを通過して洗浄
室内壁面に達したダストがあってもそれが洗浄室内壁面
ではね返ってウェハ装着部に戻ることもその液カーテン
によって阻むことができる。従って、請求項1のウェハ
乾燥装置と同様に、ウェハの汚染度の低減を図ることが
でき、洗浄室内壁面を洗浄する特別の作業が不要となる
のでメンテナンスコストが低下する。
According to a second aspect of the present invention, there is provided a wafer drying device characterized in that it has liquid curtain forming means for forming a liquid curtain between the wafer mounting portion and the inner wall surface of the cleaning chamber. Therefore, according to the wafer drying device of the second aspect, since the liquid curtain is formed around the wafer mounting portion, the dust scattered around the wafer during the rotation of the wafer mounting portion is captured by the liquid curtain, and the liquid curtain. Even if there is dust that has passed through the cleaning chamber and has reached the wall surface of the cleaning chamber, the liquid curtain can also prevent the dust from bouncing back on the wall surface of the cleaning chamber and returning to the wafer mounting portion. Therefore, similarly to the wafer drying apparatus according to the first aspect, the degree of contamination of the wafer can be reduced, and a special operation for cleaning the inner wall surface of the cleaning chamber is unnecessary, so that the maintenance cost is reduced.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明ウェハ乾燥装置の一つの実施例を示す断
面図である。
FIG. 1 is a sectional view showing an embodiment of a wafer drying apparatus of the present invention.

【図2】(A)、(B)は図1に示すウェハ乾燥装置の
各別の変形例を示す断面図である。
2A and 2B are cross-sectional views showing another modification of the wafer drying apparatus shown in FIG.

【図3】本発明ウェハ乾燥装置の他の実施例を示す断面
図である。
FIG. 3 is a sectional view showing another embodiment of the wafer drying apparatus of the present invention.

【図4】ウェハ乾燥装置の一つの従来例を示す断面図で
ある。
FIG. 4 is a cross-sectional view showing one conventional example of a wafer drying device.

【図5】ウェハ乾燥装置の他の従来例を示す断面図であ
る。
FIG. 5 is a cross-sectional view showing another conventional example of a wafer drying device.

【符号の説明】[Explanation of symbols]

1 洗浄室 2 内壁面 3 ウェハ装着部 5 壁面洗浄手段 6 壁面洗浄液 7 ウェハ洗浄液 8 内壁面2に設けられた壁面洗浄手段 9 液カーテン 10 液カーテン形成手段 DESCRIPTION OF SYMBOLS 1 Cleaning chamber 2 Inner wall surface 3 Wafer mounting part 5 Wall surface cleaning means 6 Wall surface cleaning liquid 7 Wafer cleaning liquid 8 Wall surface cleaning means provided on the inner wall surface 9 Liquid curtain 10 Liquid curtain forming means

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 ウェハを装着するウェハ装着部を有する
洗浄室内に洗浄液を注入して該ウェハ装着部に装着され
たウェハを洗浄し、該ウェハ装着部を回転させることに
より該ウェハを遠心力により乾燥するウェハ乾燥装置に
おいて、 上記洗浄室の内壁面全面に壁面洗浄液を流下させる壁面
洗浄手段を有することを特徴とするウェハ乾燥装置
1. A cleaning liquid is injected into a cleaning chamber having a wafer mounting portion for mounting a wafer to clean the wafer mounted on the wafer mounting portion, and the wafer mounting portion is rotated to centrifugally move the wafer. A wafer drying apparatus for drying includes a wall surface cleaning means for flowing down a wall surface cleaning liquid over the entire inner wall surface of the cleaning chamber.
【請求項2】 ウェハを装着するウェハ装着部を有する
洗浄室内に洗浄液を注入して該ウェハ装着部に装着され
たウェハを洗浄し、該ウェハ装着部を回転させることに
より該ウェハを遠心力により乾燥するウェハ乾燥装置に
おいて、 上記ウェハ装着部と上記洗浄室の内壁面との間に液カー
テンを形成する液カーテン形成手段を有することを特徴
とするウェハ乾燥装置
2. A cleaning liquid is injected into a cleaning chamber having a wafer mounting portion for mounting a wafer to clean the wafer mounted on the wafer mounting portion, and the wafer mounting portion is rotated to centrifugally actuate the wafer. A wafer drying device for drying, comprising a liquid curtain forming means for forming a liquid curtain between the wafer mounting part and the inner wall surface of the cleaning chamber.
JP03143192A 1992-01-21 1992-01-21 Wafer drying apparatus and semiconductor device manufacturing method Expired - Fee Related JP3191379B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP03143192A JP3191379B2 (en) 1992-01-21 1992-01-21 Wafer drying apparatus and semiconductor device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP03143192A JP3191379B2 (en) 1992-01-21 1992-01-21 Wafer drying apparatus and semiconductor device manufacturing method

Publications (2)

Publication Number Publication Date
JPH05198551A true JPH05198551A (en) 1993-08-06
JP3191379B2 JP3191379B2 (en) 2001-07-23

Family

ID=12331051

Family Applications (1)

Application Number Title Priority Date Filing Date
JP03143192A Expired - Fee Related JP3191379B2 (en) 1992-01-21 1992-01-21 Wafer drying apparatus and semiconductor device manufacturing method

Country Status (1)

Country Link
JP (1) JP3191379B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010000471A (en) * 2008-06-23 2010-01-07 Mitsubishi Electric Corp Thermostatic bath

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010000471A (en) * 2008-06-23 2010-01-07 Mitsubishi Electric Corp Thermostatic bath

Also Published As

Publication number Publication date
JP3191379B2 (en) 2001-07-23

Similar Documents

Publication Publication Date Title
US6494220B1 (en) Apparatus for cleaning a substrate such as a semiconductor wafer
KR100249272B1 (en) Substrate spin treating apparatus
JPH10172945A (en) Wafer cleaning device
JPH05198551A (en) Wafer drying equipment
KR100445634B1 (en) an apparatus for polishing semiconductor wafer
JPS61296724A (en) High-pressure jet scrubber washer
JPH10328059A (en) Bathroom cleaning device
JPS6344989Y2 (en)
JPH07201707A (en) Spin coater
KR200211252Y1 (en) Semiconductor Wafer Developer
KR0130743Y1 (en) Cleaning apparatus of a wafer
KR100872488B1 (en) Cleaning system for substrate
JP2004050054A (en) Method for washing substrate treatment device and substrate treatment device
TWI747062B (en) Processing cup unit and substrate processing apparatus
KR100187442B1 (en) Back rinsing apparatus of semiconductor process
KR20120003070U (en) Easy-Guiding Element Cleaning Machine
KR20000037583A (en) Device for cleaning semiconductor wafer
JP2982664B2 (en) Cleaning equipment
KR100313518B1 (en) Wet station bath for wafer
JPH08162435A (en) Spin cleaning and drying equipment
KR20010058879A (en) Wafer scrubber
KR960007525Y1 (en) Cleaning device of photo room
KR0132530B1 (en) Catch cup
KR20000020585U (en) Apparatus for cleansing semiconductor wafer of coating system
KR100508078B1 (en) A chemical etching plant

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees