KR20000037583A - Device for cleaning semiconductor wafer - Google Patents

Device for cleaning semiconductor wafer Download PDF

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Publication number
KR20000037583A
KR20000037583A KR1019980052208A KR19980052208A KR20000037583A KR 20000037583 A KR20000037583 A KR 20000037583A KR 1019980052208 A KR1019980052208 A KR 1019980052208A KR 19980052208 A KR19980052208 A KR 19980052208A KR 20000037583 A KR20000037583 A KR 20000037583A
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KR
South Korea
Prior art keywords
chemical
wafer
pure water
pure
drainage line
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KR1019980052208A
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Korean (ko)
Inventor
신진욱
Original Assignee
김영환
현대반도체 주식회사
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Priority to KR1019980052208A priority Critical patent/KR20000037583A/en
Publication of KR20000037583A publication Critical patent/KR20000037583A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches

Abstract

PURPOSE: A semiconductor wafer cleaning device is provided to uniformly etching a wafer by separately installing a chemical water discharging line and a pure water discharging line. CONSTITUTION: A cleaning chamber(11) is divided by a partition(15). A chemical water discharging line(16) having a valve(16a) is connected to the bottom surface of the cleaning chamber(11) on the outside of the partition(15). A pure water discharging line(18) is connected on the inside of the partition(15). A chemical retrieving line(17) is connected to one end of the chemical water discharging line(16). When a wafer chuck(12) is rotated, a chemical is sprayed on a wafer(W) through a spraying nozzle(14) to etch the layer deposited on the wafer(W). The chemical is discharged through the chemical water discharging line(16), and is retrieved through the chemical retrieving line. A pure water is sprayed on the wafer(14) through the spraying nozzle(14) to cleaning the chemical.

Description

반도체 웨이퍼 세정장치Semiconductor Wafer Cleaning Equipment

본 발명은 반도체 웨이퍼 세정장치에 관한 것으로, 특히 웨이퍼를 식각하기 위한 케미컬과 이 케미컬을 세척하기 위한 순수 중에서 순수한 케미컬만을 회수할 수 있도록 한 반도체 웨이퍼 세정장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor wafer cleaning apparatus, and more particularly, to a semiconductor wafer cleaning apparatus capable of recovering only pure chemicals from chemicals for etching a wafer and pure water for cleaning the chemicals.

일반적으로 반도체 웨이퍼 제조공정 중 세정공정은 웨이퍼에 부착되어 있는 이물질을 제거함과 아울러 웨이퍼에 증착되어 있는 증착막을 적당한 두께로 식각 및 세정한 후 건조공정으로 이동하기 위한 공정이다.In general, a cleaning process of a semiconductor wafer manufacturing process is a process for removing foreign matters adhered to the wafer and etching and cleaning the deposited film deposited on the wafer to an appropriate thickness, and then moving to a drying process.

이와 같은 웨이퍼의 세정을 실시하는 장치가 도 1에 도시되어 있는 바, 이를 간단히 설명하면 다음과 같다.An apparatus for cleaning such a wafer is shown in FIG. 1, which will be briefly described as follows.

도 1은 종래 기술에 의한 반도체 웨이퍼 세정장치를 보인 단면도로서, 이에 도시한 바와 같이, 종래 세정장치는 세정이 이루어지는 세정실(1)의 내부에 웨이퍼(W)가 안착 고정되도록 웨이퍼척(2)이 설치되어 있고, 이 웨이퍼척(2)의 저면에는 웨이퍼척(2)을 회전시킬 수 있도록 회전모터(미도시)에 연결된 회전축(3)이 결합되어 있으며, 상기 웨이퍼척(2)의 상측에는 웨이퍼(W)에 케미컬 또는 순수를 분사하는 분사노즐(4)이 이동 가능하도록 구비되어 있다.1 is a cross-sectional view showing a semiconductor wafer cleaning apparatus according to the prior art. As shown in the drawing, the conventional cleaning apparatus includes a wafer chuck 2 in which a wafer W is seated and fixed inside the cleaning chamber 1 in which cleaning is performed. Is provided, and the bottom surface of the wafer chuck 2 is coupled with a rotating shaft 3 connected to a rotating motor (not shown) so as to rotate the wafer chuck 2, and above the wafer chuck 2. An injection nozzle 4 for injecting chemical or pure water onto the wafer W is provided to be movable.

그리고 상기 웨이퍼척(2)의 주위에는 세정공정을 진행시 상기 웨이퍼척(2)의 회전에 의해 케미컬이나 순수가 세정실(1) 외부로 비산되는 것을 방지하기 위해 캐치컵(5)이 설치되어 있고, 이 캐치컵(5)의 일단부에는 캐치컵(5)을 상승 하강할 수 있도록 실린더로드(6a)가 에어실린더(6)에 연결 설치되어 있다.In addition, a catch cup 5 is installed around the wafer chuck 2 to prevent chemicals or pure water from being scattered to the outside of the cleaning chamber 1 by the rotation of the wafer chuck 2 during the cleaning process. One end of the catch cup 5 is provided with a cylinder rod 6a connected to the air cylinder 6 so that the catch cup 5 can be raised and lowered.

그리고 상기 세정실(1)의 저면에는 웨이퍼(W)에 분사되어 세정실(1) 내부에 고이는 케미컬 및 순수를 외부로 배수시키기 위한 배수라인(7)이 밸브(7a)를 구비한 채 연결되어 있고, 이 배수라인(7)의 일단부에는 케미컬을 회수하기 위한 회수라인(8)이 분기되어 있다.In addition, a drain line 7 for discharging chemicals and pure water accumulated in the washing chamber 1 to the outside is connected to the bottom of the washing chamber 1 with a valve 7a. One end of this drain line 7 is branched with a recovery line 8 for recovering chemicals.

이와 같이 구성된 웨이퍼 세정장비의 작동 과정을 설명하면 다음과 같다.Referring to the operation of the wafer cleaning equipment configured as described above are as follows.

에어실린더(6)의 작동으로 캐치컵(5)이 하강하면 웨이퍼 이송로봇(미도시)이 웨이퍼척(2)에 웨이퍼(W)를 안착시키고, 캐치컵(5)이 다시 상승하면 웨이퍼척(2)은 소정의 속도로 회전하며 분사노즐(4)에서는 웨이퍼(W)에 케미컬을 분사하여 웨이퍼(W)에 증착된 막을 식각하거나 웨이퍼(W)에 부착되어 있는 이물질을 제거한다.When the catch cup 5 is lowered by the operation of the air cylinder 6, a wafer transfer robot (not shown) seats the wafer W on the wafer chuck 2, and when the catch cup 5 is raised again, the wafer chuck ( 2) rotates at a predetermined speed, and the injection nozzle 4 injects a chemical onto the wafer W to etch a film deposited on the wafer W or to remove foreign substances attached to the wafer W.

이때, 분사노즐(4)로부터 분사된 케미컬은 세정실(1)의 저면에 연결된 배수라인(7)으로 배수되는데, 상기 배수라인(7)에 설치된 밸브(7a)는 잠긴 상태이기 때문에 케미컬은 회수라인(8)으로 유입되어 회수된다.At this time, the chemical injected from the injection nozzle 4 is drained to the drain line 7 connected to the bottom surface of the cleaning chamber 1, and the chemical is recovered because the valve 7a installed in the drain line 7 is locked. It is introduced into line 8 and recovered.

그후, 분사노즐(4)은 웨이퍼(W)에 순수를 분사하여 상기 케미컬을 씻어 내린다.Thereafter, the spray nozzle 4 sprays pure water on the wafer W to wash off the chemical.

이때, 케미컬 분사과정이 끝나고 순수를 분사할 때에는 배수라인(7)의 밸브(7a)를 개방하여 배수라인(7)에 잔존하고 있는 케미컬이 모두 배수되도록 한다.At this time, when the injection of pure water after the chemical injection process is completed, the valve 7a of the drain line 7 is opened so that all of the remaining chemical in the drain line 7 is drained.

그러나, 상기와 같은 종래 기술은 케미컬과 순수가 같은 배수라인(7)으로 배수되다가 상기 배수라인(7)에 분기된 회수라인(8)으로 케미컬이 회수됨에 따라 순수한 케미컬만을 회수하지 못하고 순수에 의해 희석된 케미컬이 회수되므로 회수된 케미컬을 이용하여 다음 웨이퍼(W)를 식각할 때에는 식각율을 저하시키는 문제점이 있었다.However, in the prior art as described above, the chemical and pure water are drained to the same drainage line 7, and as the chemical is recovered to the recovery line 8 branched to the drainage line 7, only pure chemicals are not recovered. Since the diluted chemical is recovered, there is a problem of lowering the etching rate when etching the next wafer W using the recovered chemical.

본 발명은 이러한 문제점을 해결하기 위한 것으로, 케미컬과 순수의 배수라인을 별도로 구비하여 순수가 배제된 상태의 순수한 케미컬만을 회수하여 다음 웨이퍼의 식각에 사용할 수 있는 반도체 웨이퍼 세정장치를 제공하는데 그 목적이 있다.SUMMARY OF THE INVENTION The present invention has been made to solve this problem, and provides a semiconductor wafer cleaning apparatus that can be used to etch the next wafer by recovering only pure chemicals in which the pure water is excluded by separately providing a drainage line of the chemical and the pure water. have.

도 1은 종래 기술에 의한 반도체 웨이퍼 세정장치를 개략적으로 보인 단면도.1 is a cross-sectional view schematically showing a semiconductor wafer cleaning apparatus according to the prior art.

도 2는 본 발명에 의한 반도체 웨이퍼 세정장치를 개략적으로 보인 단면도.2 is a cross-sectional view schematically showing a semiconductor wafer cleaning apparatus according to the present invention.

도 3은 본 발명에 의한 반도체 웨이퍼 세정장치의 케미컬 분사동작을 보인 단면도.Figure 3 is a cross-sectional view showing a chemical injection operation of the semiconductor wafer cleaning apparatus according to the present invention.

도 4는 본 발명에 의한 반도체 웨이퍼 세정장치의 순수 분사동작을 보인 단면도.Figure 4 is a cross-sectional view showing a pure jet operation of the semiconductor wafer cleaning apparatus according to the present invention.

** 도면의 주요부분에 대한 부호의 설명 **** Explanation of symbols for main parts of drawings **

11 ; 세정실 12 ; 웨이퍼척11; Washing chamber 12; Wafer chuck

14 ; 분사노즐 15 ; 칸막이14; Injection nozzle 15; bulkhead

16 ; 케미컬 배수라인 17 ; 케미컬 회수라인16; Chemical drain line 17; Chemical Recovery Line

18 ; 순수 배수라인 19 ; 케미컬 캐치컵18; Pure drainage line 19; Chemical Catch Cup

20 ; 순수 캐치컵 20a ; 순수 비산방지막20; Pure catch cup 20a; Pure Shatterproof Film

21 ; 에어실린더21; Air cylinder

상기와 같은 목적을 달성하기 위하여 웨이퍼의 세정작업이 이루어지는 세정실과, 이 세정실의 내부에 설치되어 웨이퍼가 안착된 상태로 회전하는 웨이퍼척과, 이 웨이퍼척의 상측에 위치하여 웨이퍼에 케미컬 및 순수를 분사하는 분사노즐과, 상기 세정실의 저면에 각각 연결 설치되는 케미컬 배수라인 및 순수 배수라인과, 상기 케미컬 배수라인의 일단부에 분기되어 케미컬이 회수되는 케미컬 회수라인과, 상기 케미컬 배수라인과 순수 배수라인을 구획하도록 상기 세정실의 내측 동심원상에 설치되는 칸막이와, 상기 웨이퍼척의 주위에 설치되어 웨이퍼에 케미컬과 순수의 분사시 각각의 약액들이 비산되는 것을 방지함과 아울러 상기 케미컬 배수라인과 순수 배수라인으로 배수하기 위한 케미컬 캐치컵 및 순수 캐치컵과, 이 각각의 캐치컵을 상승 하강시키는 캐치컵 승강수단을 포함하여 구성되는 것을 특징으로 하는 반도체 웨이퍼 세정장치가 제공된다.In order to achieve the above object, a cleaning chamber in which a wafer is cleaned is provided, a wafer chuck installed inside the cleaning chamber and rotating while the wafer is seated, and positioned above the wafer chuck to inject chemical and pure water onto the wafer. A spray nozzle, a chemical drain line and a pure drain line connected to the bottom of the cleaning chamber, and a chemical recovery line branched at one end of the chemical drain line to recover the chemical, and the chemical drain line and the pure drain A partition provided on the inner concentric circle of the cleaning chamber so as to partition the line, and installed around the wafer chuck to prevent the respective chemicals from scattering during the injection of chemical and pure water onto the wafer, and the chemical drainage line and the pure drainage Chemical catch cup and pure catch cup for draining to the line, and each of them There is provided a semiconductor wafer cleaning apparatus comprising a catch cup lifting means for lowering.

이하, 본 발명에 의한 반도체 웨이퍼 세정장치를 첨부도면에 도시한 실시예에 따라 설명하면 다음과 같다.Hereinafter, the semiconductor wafer cleaning apparatus according to the present invention will be described according to the embodiment shown in the accompanying drawings.

본 발명의 웨이퍼 세정장치는 도 2에 도시한 바와 같이, 세정공정을 진행하기 위한 원통형의 세정실(11) 내부에 웨이퍼(W)가 얹어지는 웨이퍼척(12)이 설치되고, 이 웨이퍼척(12)의 하부에는 회전모터(미도시)에 결합된 회전축(13)이 연결되며, 상기 웨이퍼척(12)의 상측에는 웨이퍼(W)를 식각하기 위한 케미컬 및 이 케미컬을 세정하기 위한 순수를 분사하기 위한 분사노즐(14)이 구비된다.In the wafer cleaning apparatus of the present invention, as shown in Fig. 2, a wafer chuck 12 in which a wafer W is placed inside a cylindrical cleaning chamber 11 for performing a cleaning process is provided. 12 is connected to a rotating shaft 13 coupled to a rotating motor (not shown), and the upper side of the wafer chuck 12 is sprayed with a chemical for etching the wafer W and pure water for cleaning the chemical. A jet nozzle 14 is provided for the purpose.

그리고 상기 세정실(11)의 내부는 세정실(11) 벽면으로부터 일정 간격을 두고 동심원상에 설치된 칸막이(15)에 의해 구획되는데, 이 칸막이(15)의 외측으로 세정실(11)의 저면에는 밸브(16a)가 구비된 케미컬 배수라인(16)이 연결되고, 칸막이(15)의 내측으로는 순수 배수라인(18)이 연결된다. 그리고 상기 케미컬 배수라인(16)의 일단부에는 U트랩이 구비된 케미컬 회수라인(17)이 연결된다.The interior of the cleaning chamber 11 is partitioned by partitions 15 arranged in concentric circles at regular intervals from the wall surface of the cleaning chamber 11. The bottom surface of the cleaning chamber 11 is located outside the partition 15. A chemical drain line 16 having a valve 16a is connected, and a pure drain line 18 is connected to the inside of the partition 15. A chemical recovery line 17 having a U trap is connected to one end of the chemical drain line 16.

또한, 상기 세정실(11)의 상측에는 상기 분사노즐(14)로부터 회전하고 있는 웨이퍼(W)에 케미컬 또는 순수가 분사될 때 상기 약액(케미컬, 순수)들이 비산되는 것을 방지하기 위한 캐치컵이 상기 세정실(11)의 벽면과 칸막이(15) 사이에 승강 가능하도록 구비되는데, 이때 상기 캐치컵은 케미컬의 비산을 막는 케미컬 캐치컵(19)과, 이 케미컬 캐치컵(19)의 내측에 순수의 비산을 막는 순수 캐치컵(20)이 이중으로 연결 설치된다.In addition, a catch cup for preventing chemicals (chemical and pure water) from scattering when chemical or pure water is injected onto the wafer (W) rotating from the injection nozzle (14) above the cleaning chamber (11). It is provided so as to be able to move up and down between the wall surface and the partition 15 of the cleaning chamber 11, wherein the catch cup is a chemical catch cup 19 to prevent the scattering of the chemical, and the pure water inside the chemical catch cup 19 Pure catch cup 20 to prevent the scattering of the double is installed.

그리고 상기 케미컬 캐치컵(19)에는 캐치컵을 상승 하강할 수 있도록 실린더로드(21a)가 구비된 에어실린더(21)가 연결 설치되고, 상기 순수 캐치컵(20)에는 순수의 분사시 칸막이(15)의 외측으로 순수가 비산되어 케미컬이 희석되는 것을 방지하기 위한 순수 비산방지막(20a)이 상기 칸막이(15)에 대응하여 결합 설치된다.In addition, an air cylinder 21 having a cylinder rod 21a is connected to the chemical catch cup 19 so as to ascend and descend the catch cup, and the pure catch cup 20 has a partition 15 for spraying pure water. Pure water scattering prevention film (20a) to prevent the pure water is scattered to the outside of the) is diluted to correspond to the partition (15).

상기와 같이 구성된 본 발명에 의한 웨이퍼 세정장비의 작동을 설명하면 다음과 같다.Referring to the operation of the wafer cleaning equipment according to the present invention configured as described above are as follows.

에어실린더(21)의 작동으로 케미컬 캐치컵(19) 및 순수 캐치컵(20)이 하강한 후 웨이퍼(W)가 웨이퍼척(12) 위에 안착되면, 도 3에 도시한 바와 같이 상기 각각의 캐치컵(19)(20)은 웨이퍼(W)의 위치에 케미컬 캐치컵(19)이 대응되도록 다시 소정 높이 상승하고, 분사노즐(14)이 세정실(11) 내부로 인입되어 웨이퍼(W)의 상측에 위치하게 된다.When the wafer W is seated on the wafer chuck 12 after the chemical catch cup 19 and the pure catch cup 20 are lowered by the operation of the air cylinder 21, the respective catches as shown in FIG. The cups 19 and 20 rise again to a predetermined height such that the chemical catch cups 19 correspond to the positions of the wafers W, and the injection nozzles 14 are introduced into the cleaning chamber 11 to allow the wafers W It is located on the upper side.

그후, 웨이퍼척(12)이 소정의 속도로 회전하면 상기 분사노즐(14)로부터 웨이퍼(W)에 케미컬이 분사되어 웨이퍼(W)에 증착된 막을 식각하게 된다. 이때, 분사노즐(14)로부터 분사되어 비산되는 케미컬은 케미컬 캐치컵(19)에 의해 차단되어 칸막이(15)에 의해 구획된 케미컬 배수라인(16)으로 배수되며, 케미컬 회수라인(17)을 통해 회수된다.Thereafter, when the wafer chuck 12 rotates at a predetermined speed, chemical is injected from the injection nozzle 14 to the wafer W to etch a film deposited on the wafer W. At this time, the chemical sprayed from the spray nozzle 14 is scattered by the chemical catch cup 19 is drained to the chemical drain line 16 partitioned by the partition 15, through the chemical recovery line 17 It is recovered.

그리고 나서 상기 캐치컵은 도 4에 도시한 바와 같이 웨이퍼(W)의 위치에 순수 캐치컵(20)이 대응되도록 상승한 후, 웨이퍼(W)에 묻어 있는 케미컬을 세정하기 위해 분사노즐(14)로부터 순수가 웨이퍼(14)에 분사된다.Then, the catch cup ascends so that the pure catch cup 20 corresponds to the position of the wafer W as shown in FIG. 4, and then, from the spray nozzle 14, to clean the chemical on the wafer W. Pure water is injected onto the wafer 14.

이때 비산되는 순수는 순수 캐치컵(20) 및 순수 비산방지막(20a)에 의해 차단되어 순수 배수라인(18)으로 배수된다.At this time, the pure water is blocked by the pure catch cup 20 and the pure anti-scattering film (20a) is drained to the pure water drain line (18).

이와 같이 케미컬과 순수를 별도로 배수 및 회수함으로써 순수한 케미컬만을 회수할 수 있게 된다.As such, by purely draining and recovering chemicals and pure water, only pure chemicals can be recovered.

이상에서 설명한 바와 같이, 본 발명에 의한 반도체 웨이퍼 세정장치는 케미컬과 순수의 배수라인을 별도로 구비하여 순수가 배제된 상태의 순수한 케미컬만을 회수하여 다음 웨이퍼의 식각에 사용함으로써 식각 균일도를 향상시키게 된다.As described above, the semiconductor wafer cleaning apparatus according to the present invention has separate drainage lines of chemical and pure water, and recovers only pure chemicals in which the pure water is excluded and used for etching the next wafer, thereby improving the etching uniformity.

Claims (2)

웨이퍼의 세정작업이 이루어지는 세정실과, 이 세정실의 내부에 설치되어 웨이퍼가 안착된 상태로 회전하는 웨이퍼척과, 이 웨이퍼척의 상측에 위치하여 웨이퍼에 케미컬 및 순수를 분사하는 분사노즐과, 상기 세정실의 저면에 각각 연결 설치되는 케미컬 배수라인 및 순수 배수라인과, 상기 케미컬 배수라인의 일단부에 분기되어 케미컬이 회수되는 케미컬 회수라인과, 상기 케미컬 배수라인과 순수 배수라인을 구획하도록 상기 세정실의 내측 동심원상에 설치되는 칸막이와, 상기 웨이퍼척의 주위에 설치되어 웨이퍼에 케미컬과 순수의 분사시 각각의 약액들이 비산되는 것을 방지함과 아울러 상기 케미컬 배수라인과 순수 배수라인으로 배수하기 위한 케미컬 캐치컵 및 순수 캐치컵과, 이 각각의 캐치컵을 상승 하강시키는 캐치컵 승강수단을 포함하여 구성되는 것을 특징으로 하는 반도체 웨이퍼 세정장치.A cleaning chamber in which wafer cleaning is performed, a wafer chuck installed inside the cleaning chamber and rotating while the wafer is seated, an injection nozzle positioned above the wafer chuck to inject chemical and pure water onto the wafer, and the cleaning chamber The chemical drainage line and the pure drainage line connected to the bottom surface of the chemical drainage line and branched at one end of the chemical drainage line to recover the chemical, and the chemical drainage line and the pure drainage line to partition the chemical drainage line A partition is formed on the inner concentric circle, and a chemical catch cup installed around the wafer chuck to prevent the respective chemicals from scattering during the injection of chemical and pure water onto the wafer, and to drain the chemical and pure drain lines. And a pure catch cup, and catch cup lifting means for raising and lowering each catch cup. Semiconductor wafer cleaning apparatus characterized in that the open configuration. 제 1항에 있어서, 상기 순수 캐치컵의 하부에는 상기 칸막이에 대응하여 웨이퍼에 순수의 분사시 케미컬 배수라인으로 순수가 비산되는 것을 방지하기 위한 순수 비산방지막을 설치하는 것을 특징으로 하는 반도체 웨이퍼 세정장치.2. The semiconductor wafer cleaning apparatus according to claim 1, wherein a pure water scattering prevention film is provided at a lower portion of the pure water catch cup to prevent the pure water from scattering in the chemical drainage line when the pure water is sprayed onto the wafer in correspondence with the partition. .
KR1019980052208A 1998-12-01 1998-12-01 Device for cleaning semiconductor wafer KR20000037583A (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040012111A (en) * 2002-08-01 2004-02-11 주식회사 에이알티 A catch cup of many stories and a semiconductor wafer cleaning apparatus comprising it
KR100824306B1 (en) * 2006-12-22 2008-04-22 세메스 주식회사 Apparatus for treating substrate
KR100839913B1 (en) * 2007-01-12 2008-06-19 세메스 주식회사 Apparatus and method for treating substrates
KR101327506B1 (en) * 2010-11-02 2013-11-08 세메스 주식회사 Substrate processing apparatus
CN113539937A (en) * 2021-07-09 2021-10-22 江西龙芯微科技有限公司 Wafer bearing device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040012111A (en) * 2002-08-01 2004-02-11 주식회사 에이알티 A catch cup of many stories and a semiconductor wafer cleaning apparatus comprising it
KR100824306B1 (en) * 2006-12-22 2008-04-22 세메스 주식회사 Apparatus for treating substrate
KR100839913B1 (en) * 2007-01-12 2008-06-19 세메스 주식회사 Apparatus and method for treating substrates
KR101327506B1 (en) * 2010-11-02 2013-11-08 세메스 주식회사 Substrate processing apparatus
CN113539937A (en) * 2021-07-09 2021-10-22 江西龙芯微科技有限公司 Wafer bearing device
CN113539937B (en) * 2021-07-09 2023-03-03 江西龙芯微科技有限公司 Wafer bearing device

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