JPH0519301B2 - - Google Patents
Info
- Publication number
- JPH0519301B2 JPH0519301B2 JP30893388A JP30893388A JPH0519301B2 JP H0519301 B2 JPH0519301 B2 JP H0519301B2 JP 30893388 A JP30893388 A JP 30893388A JP 30893388 A JP30893388 A JP 30893388A JP H0519301 B2 JPH0519301 B2 JP H0519301B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- etching solution
- metal layer
- hydrochloric acid
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005530 etching Methods 0.000 claims description 54
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 51
- 239000002184 metal Substances 0.000 claims description 27
- 229910052751 metal Inorganic materials 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 10
- 229910052787 antimony Inorganic materials 0.000 claims description 9
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims description 7
- 239000011733 molybdenum Substances 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 18
- 239000004065 semiconductor Substances 0.000 description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- FAPDDOBMIUGHIN-UHFFFAOYSA-K antimony trichloride Chemical compound Cl[Sb](Cl)Cl FAPDDOBMIUGHIN-UHFFFAOYSA-K 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000035699 permeability Effects 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Weting (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30893388A JPH02155232A (ja) | 1988-12-08 | 1988-12-08 | エッチング方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30893388A JPH02155232A (ja) | 1988-12-08 | 1988-12-08 | エッチング方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02155232A JPH02155232A (ja) | 1990-06-14 |
| JPH0519301B2 true JPH0519301B2 (enrdf_load_stackoverflow) | 1993-03-16 |
Family
ID=17987019
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30893388A Granted JPH02155232A (ja) | 1988-12-08 | 1988-12-08 | エッチング方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02155232A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103617952A (zh) * | 2013-11-29 | 2014-03-05 | 中国电子科技集团公司第四十七研究所 | 二极管湿法刻蚀方法 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6997985B1 (en) | 1993-02-15 | 2006-02-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor, semiconductor device, and method for fabricating the same |
-
1988
- 1988-12-08 JP JP30893388A patent/JPH02155232A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103617952A (zh) * | 2013-11-29 | 2014-03-05 | 中国电子科技集团公司第四十七研究所 | 二极管湿法刻蚀方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02155232A (ja) | 1990-06-14 |
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