JPH05190623A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPH05190623A
JPH05190623A JP4003356A JP335692A JPH05190623A JP H05190623 A JPH05190623 A JP H05190623A JP 4003356 A JP4003356 A JP 4003356A JP 335692 A JP335692 A JP 335692A JP H05190623 A JPH05190623 A JP H05190623A
Authority
JP
Japan
Prior art keywords
chip
delay time
semiconductor integrated
circuit
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4003356A
Other languages
Japanese (ja)
Inventor
Kenji Niwa
健二 丹羽
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP4003356A priority Critical patent/JPH05190623A/en
Publication of JPH05190623A publication Critical patent/JPH05190623A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To measure an average delay time inside a chip by arranging an self-excitation oscillation circuit for delaytime measurement while dispersing it inside a chip. CONSTITUTION:A self-excitation oscillation circuit 4 for measuring delay time is composed by arranging a NOT-AND operation circuits 3 in the peripheral part of a chip at equal intervals for being electrically in inseries connected. An average delay time of an element of the chip inside can be measured by connecting output of an optional NOT-AND operation circuit 3 to the in-and- output terminals 2 so as to oscillate a self-excitation oscillation circuit. Accordingly, a danger of mistake selection at the time of chip selection can be reduced by knowing an average delay time of the whole of a chip at the time of different delay time of the element depending on the place inside the chip.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、半導体集積回路装置に
関し、特に、論理演算回路による半導体集積回路の回路
配置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor integrated circuit device, and more particularly to a circuit arrangement of a semiconductor integrated circuit by a logical operation circuit.

【0002】[0002]

【従来の技術】近年、半導体集積回路の高速化により、
論理演算回路の遅延時間が極めて小さくなったために、
論理演算回路単体の遅延時間の測定が困難になってき
た。
2. Description of the Related Art In recent years, due to the speeding up of semiconductor integrated circuits,
Since the delay time of the logical operation circuit has become extremely small,
It has become difficult to measure the delay time of a single logic operation circuit.

【0003】そこで、従来の技術では、図3に示すよう
にチップ26の一部に否定論理演算回路23を奇数個用
いて環状に直列接続した遅延時間測定用自励発振回路2
4をチップのある限られた狭い領域に配置していた。こ
の遅延時間測定用自励発振回路は、一つのリセット端子
と一つの出力端子を有しており、発振回路はリセットす
ることによって発振し、その発振状況は出力端子に周波
数測定器を接続することによって観測することができ
る。
Therefore, in the conventional technique, as shown in FIG. 3, a self-excited oscillation circuit 2 for delay time measurement, in which an odd number of negative logic operation circuits 23 are used in a part of a chip 26 and are connected in series in a ring shape.
4 was placed in a limited small area with chips. This delay time measurement self-excited oscillation circuit has one reset terminal and one output terminal, and the oscillation circuit oscillates by resetting, and the oscillation condition is to connect a frequency measuring instrument to the output terminal. Can be observed by.

【0004】この回路をリセットすると、1段目の否定
論理演算回路にレベル“1”の信号が入力され、その出
力から反転されたレベル“0”の信号が2段目の否定論
理演算回路に入力されるというように順次否定論理演算
回路を信号が伝わり、最終段否定論理演算回路にはレベ
ル“1”の信号が入力される。その結果、最終段の否定
論理演算回路の出力にはレベル“0”の信号が出力され
ることになる。つまり、最終段否定論理演算回路の出力
は必ず1段目否定論理演算回路の入力信号と反対のレベ
ルの信号が現われる。
When this circuit is reset, a signal of level "1" is input to the first-stage negative logic operation circuit, and a signal of level "0" inverted from the output is input to the second-stage negative logic operation circuit. Signals are sequentially transmitted through the negative logic operation circuit as if they were input, and a signal of level "1" is input to the final stage negative logic operation circuit. As a result, a signal of level "0" is output to the output of the final NOR circuit. That is, the output of the final-stage negative logic operation circuit always shows a signal of the opposite level to the input signal of the first-stage negative logic operation circuit.

【0005】この反転した信号は出力端子から出力され
ると同時に、1段目の否定論理演算回路への入力信号と
なるために、次回最終段否定論理演算回路からの出力は
レベル“1”の信号となる。
Since this inverted signal is output from the output terminal and at the same time becomes an input signal to the first-stage negative logic operation circuit, the output from the final last-stage negative logic operation circuit is at level "1". Become a signal.

【0006】これら一連の信号電搬機構によって、出力
端子からある周波数を有する矩形波信号が観測される。
例えば、自励発振回路の否定論理演算回路段数が45
段、出力信号の周波数が120MHzであった場合に
は、否定論理演算回路1段当たりの遅延時間は、
A rectangular wave signal having a certain frequency is observed from the output terminal by the series of signal transfer mechanisms.
For example, if the number of negative logic operation circuit stages of the self-excited oscillation circuit is 45
And the frequency of the output signal is 120 MHz, the delay time per negative logic operation circuit is

【数1】 1/(120MHz×45段×2)≒92.5[ps] と算出することができる。## EQU1 ## It can be calculated as 1 / (120 MHz × 45 stages × 2) ≈92.5 [ps].

【0007】[0007]

【発明が解決しようとする課題】上述した従来の半導体
集積回路における遅延時間測定用自励発振回路の配置
は、内部素子領域とは別にチップ内のある限られた狭い
領域に発振回路が設けられている。従って、チップ内部
の素子の遅延時間にばらつきが生じた場合にこの回路配
置ではチップ内のごく一部の素子の遅延時間を知ること
はできても、チップ全体の遅延時間を把握することはで
きない。
The layout of the self-excited oscillation circuit for measuring the delay time in the above-described conventional semiconductor integrated circuit is such that the oscillation circuit is provided in a limited narrow area in the chip apart from the internal element area. ing. Therefore, when variations occur in the delay times of the elements inside the chip, this circuit arrangement allows the delay times of only a small portion of the chips to be known, but not the delay times of the entire chip. ..

【0008】特に、チップサイズが大きくなるとチップ
内部の遅延時間のばらつきも大きくなり、従来の技術で
測定された遅延時間と内部素子の遅延時間との差が益々
大きくなってしまう。
In particular, as the chip size increases, the variation in the delay time inside the chip also increases, and the difference between the delay time measured by the conventional technique and the delay time of the internal element increases.

【0009】その結果、チップ選別時に誤った選別を行
う危険性が増し、コンピュータ本体にチップを実装した
ときの不具合発生率が高くなるという課題がある。
As a result, there is a problem that the risk of wrong selection at the time of chip selection increases, and the failure occurrence rate when the chip is mounted on the computer main body increases.

【0010】大型コンピュータに使用される15mm角
程の大型チップの場合には、チップ選別時に良品と選別
されたチップをコンピュータに実装したときに起こる遅
延時間不良による不具合発生率は1%程度あると言われ
ている。
In the case of a large chip of about 15 mm square used in a large computer, the defect occurrence rate due to a delay time defect that occurs when a chip selected as a good product at the time of chip selection is mounted on the computer is about 1%. It is said.

【0011】本発明は従来の上記実情に鑑みてなされた
ものであり、従って本発明の目的は、従来の技術に内在
する上記課題を解決することを可能とした新規な半導体
集積回路装置を提供することにある。
The present invention has been made in view of the above-mentioned conventional circumstances, and therefore, an object of the present invention is to provide a novel semiconductor integrated circuit device capable of solving the above problems inherent in the prior art. To do.

【0012】[0012]

【課題を解決するための手段】上記目的を達成する為
に、本発明に係る半導体集積回路装置は、遅延時間測定
用自励発振回路を構成する否定論理演算回路を、半導体
集積回路チップ全体を囲むようにチップの周囲に配置す
るか、あるいは2個以上に分割された半導体集積回路の
回路ブロック毎に該回路ブロック全体を囲むように該回
路ブロックの周囲に配置することを特徴とする。
In order to achieve the above object, a semiconductor integrated circuit device according to the present invention includes a negative logic operation circuit forming a self-excited oscillation circuit for delay time measurement, and a semiconductor integrated circuit chip as a whole. It is characterized in that it is arranged around the chip so as to surround it, or for each circuit block of the semiconductor integrated circuit divided into two or more, it is arranged around the circuit block so as to surround the whole circuit block.

【0013】[0013]

【実施例】次に、本発明をその好ましい各実施例につい
て図面を参照して具体的に説明する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will now be described in detail with reference to the drawings for each of its preferred embodiments.

【0014】図1は本発明に係る半導体集積回路装置の
第1の実施例を示す平面概念図である。
FIG. 1 is a schematic plan view showing a first embodiment of a semiconductor integrated circuit device according to the present invention.

【0015】図1を参照するに、チップ6の上下左右の
各辺の内周に沿って、否定論理演算回路3を等間隔に1
1個、12個、11個、11個配置し、電気的に直列接
続することによって遅延時間測定用自励発振回路4が構
成されている。一つの否定論理演算回路3の出力を任意
の入出力端子2に接続し、その端子に周波数測定器を接
続することによってチップ内周にある素子の平均遅延時
間を測定することができる。
Referring to FIG. 1, along the inner circumference of each of the upper, lower, left and right sides of the chip 6, the NOT logic operation circuits 3 are arranged at equal intervals.
The delay time measuring self-excited oscillation circuit 4 is configured by arranging 1, 12, 11, and 11 pieces and electrically connecting them in series. By connecting the output of one negative logic operation circuit 3 to an arbitrary input / output terminal 2 and connecting a frequency measuring device to that terminal, the average delay time of the elements on the inner circumference of the chip can be measured.

【0016】例えば、チップ上部の遅延時間が大きく、
チップ下部に向かって遅延時間が小さくなっていくよう
な遅延時間分布をもったチップの場合には、従来の技術
ではチップ内のきわめて小さな領域に発振回路が設けら
れていたために、そのチップ全体の平均遅延時間を測定
することは不可能であった。しかしながら本発明によれ
ば、チップ上下または左右方向に素子の遅延時間がばら
ついているとき、チップ上部または下部に配置されてい
る否定論理演算回路3の遅延時間の総計によって、チッ
プの横方向に対する素子の平均遅延時間を求めることが
でき、同様にチップ左部または右部に配置されている各
否定論理演算回路の遅延時間の総計によって、チップの
縦方向に対する素子の平均遅延時間を求めることができ
る。チップの上下左右に配置されている否定論理演算回
路の遅延時間の総計をそれぞれA、B、C、Dとすれば
チップ全体の平均遅延時間Tは
For example, the delay time at the top of the chip is large,
In the case of a chip having a delay time distribution in which the delay time becomes smaller toward the bottom of the chip, the oscillation circuit was provided in an extremely small area within the chip in the conventional technology, and therefore the entire chip It was impossible to measure the average delay time. However, according to the present invention, when the delay times of the elements are varied in the vertical and horizontal directions of the chip, the total of the delay times of the negative logic operation circuits 3 arranged in the upper and lower parts of the chip causes the elements in the horizontal direction of the chip. Can be obtained, and similarly, the average delay time of the elements in the vertical direction of the chip can be obtained by the total delay time of the respective negative logic operation circuits arranged on the left side or the right side of the chip. .. If the total delay times of the negative logic operation circuits arranged on the upper, lower, left and right sides of the chip are A, B, C and D respectively, the average delay time T of the entire chip is

【数2】T=(A+B+C+D)/45 によって求めることができる。## EQU2 ## It can be obtained by T = (A + B + C + D) / 45.

【0017】入出力端子2から観測される周波数fがThe frequency f observed from the input / output terminal 2 is

【数3】f=1/{(A+B+C+D)×2} であることから、Since f = 1 / {(A + B + C + D) × 2},

【数4】T=1/(2×f×45) によって遅延時間を求めることができる。## EQU4 ## The delay time can be calculated by T = 1 / (2 × f × 45).

【0018】図2は本発明に係る半導体集積回路装置の
第2の実施例を示す平面概念図である。
FIG. 2 is a plan conceptual view showing a second embodiment of the semiconductor integrated circuit device according to the present invention.

【0019】図2を参照するに、上記第1の実施例と同
様に、チップ16の第1の領域11の内周に否定論理回
路3を45個配置し、電気的に直列接続することによっ
て第1の遅延時間測定用自励回路41が構成される。同
様にして、第2の領域12に第2の遅延時間測定用自励
発振回路42を、第3の領域13に第3の遅延時間測定
用自励発振回路43を、第4の領域14に第4の遅延時
間測定用自励発振回路44をそれぞれ構成し、各領域に
おいて前記第1の実施例と同様にして平均遅延時間を測
定することができる。
Referring to FIG. 2, as in the first embodiment, 45 negative logic circuits 3 are arranged on the inner periphery of the first region 11 of the chip 16 and electrically connected in series. A first delay time measuring self-exciting circuit 41 is configured. Similarly, the second delay time measurement self-excited oscillation circuit 42 is provided in the second region 12, the third delay time measurement self-excited oscillation circuit 43 is provided in the third region 13, and the fourth region 14 is provided. The fourth delay time measuring self-excited oscillation circuit 44 is configured, and the average delay time can be measured in each region in the same manner as in the first embodiment.

【0020】第1の実施例の場合には、チップ全体の平
均遅延時間を測定することはできてもチップ内の遅延時
間のばらつき傾向を把握することはできない。
In the case of the first embodiment, the average delay time of the entire chip can be measured, but the variation tendency of the delay time in the chip cannot be grasped.

【0021】しかしながら、第2の実施例のようにチッ
プ内に複数個の遅延時間測定用自励発振回路を配置する
ことによって、チップ内部の遅延時間のばらつき傾向を
詳細に把握することが可能になる。
However, by disposing a plurality of delay time measuring self-excited oscillation circuits in the chip as in the second embodiment, it is possible to grasp the tendency of dispersion of the delay time inside the chip in detail. Become.

【0022】[0022]

【発明の効果】以上説明したように、本発明によれば、
1チップ内に遅延時間測定用自励発振回路を分散して配
置しているので、チップ内の素子の遅延時間にばらつき
がある場合、チップ全体の平均遅延時間および遅延時間
のばらつき傾向を詳細に測定することができる。従っ
て、従来の技術のようにチップのごく一部の素子の遅延
時間をもとにチップの選別を行うことにより発生する実
装時の不具合をほとんど皆無とすることができる。
As described above, according to the present invention,
Since the self-oscillation circuits for delay time measurement are distributed and arranged in one chip, when the delay times of the elements in the chip vary, the average delay time of the entire chip and the variation tendency of the delay time are detailed. Can be measured. Therefore, it is possible to eliminate almost any inconvenience at the time of mounting, which occurs when the chips are selected based on the delay time of a small part of the chips as in the conventional technique.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明に係る半導体集積回路装置の第1の実施
例を示す平面概念図である。
FIG. 1 is a conceptual plan view showing a first embodiment of a semiconductor integrated circuit device according to the present invention.

【図2】本発明に係る半導体集積回路装置の第2の実施
例を示す平面概念図である。
FIG. 2 is a conceptual plan view showing a second embodiment of the semiconductor integrated circuit device according to the present invention.

【図3】従来技術を説明するための半導体集積回路装置
の平面概念図である。
FIG. 3 is a conceptual plan view of a semiconductor integrated circuit device for explaining a conventional technique.

【符号の説明】[Explanation of symbols]

1、21…スクライブ線 2、22…入出力端子 3、23…否定論理演算回路 4、24…遅延時間測定用自励発振回路 5、25…内部素子領域 6、26…チップ 11…第1の領域 12…第2の領域 13…第3の領域 14…第4の領域 41…第1の遅延時間測定用自励発振回路 42…第2の遅延時間測定用自励発振回路 43…第3の遅延時間測定用自励発振回路 44…第4の遅延時間測定用自励発振回路 1, 21 ... Scribe line 2, 22 ... Input / output terminal 3, 23 ... Negative logic operation circuit 4, 24 ... Self-excited oscillation circuit for delay time measurement 5, 25 ... Internal element region 6, 26 ... Chip 11 ... First Region 12 ... Second region 13 ... Third region 14 ... Fourth region 41 ... First delay time measuring self-excited oscillation circuit 42 ... Second delay time measuring self-excited oscillation circuit 43 ... Third Self-oscillation circuit for delay time measurement 44 ... Fourth self-oscillation circuit for delay time measurement

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 遅延時間測定用自動発振回路を内部に持
つ半導体集積回路装置において、前記遅延時間測定用発
振回路を構成する否定論理演算回路を、半導体集積回路
チップの外周部に配置するか、あるいは2個以上に分割
された半導体集積回路のブロック毎に該ブロック全体を
囲むように該ブロックの周囲に配置することを特徴とす
る半導体集積回路装置。
1. A semiconductor integrated circuit device having a delay time measuring automatic oscillation circuit therein, wherein a negative logic operation circuit constituting the delay time measuring oscillation circuit is arranged on an outer peripheral portion of a semiconductor integrated circuit chip, Alternatively, the semiconductor integrated circuit device is characterized in that each block of the semiconductor integrated circuit divided into two or more is arranged around the block so as to surround the entire block.
【請求項2】 前記否定論理演算回路の構成を、チップ
外周部に加えて内部にも一部配したことを更に特徴とす
る請求項1に記載の半導体集積回路装置。
2. The semiconductor integrated circuit device according to claim 1, further comprising a part of the configuration of the NOT logic operation circuit arranged inside the chip in addition to the peripheral part.
JP4003356A 1992-01-10 1992-01-10 Semiconductor integrated circuit device Pending JPH05190623A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4003356A JPH05190623A (en) 1992-01-10 1992-01-10 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4003356A JPH05190623A (en) 1992-01-10 1992-01-10 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPH05190623A true JPH05190623A (en) 1993-07-30

Family

ID=11555073

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4003356A Pending JPH05190623A (en) 1992-01-10 1992-01-10 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPH05190623A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5955764A (en) * 1994-10-06 1999-09-21 Fujitsu Limited MOS LSI with projection structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5955764A (en) * 1994-10-06 1999-09-21 Fujitsu Limited MOS LSI with projection structure

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