JPH0636580Y2 - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPH0636580Y2
JPH0636580Y2 JP1986141971U JP14197186U JPH0636580Y2 JP H0636580 Y2 JPH0636580 Y2 JP H0636580Y2 JP 1986141971 U JP1986141971 U JP 1986141971U JP 14197186 U JP14197186 U JP 14197186U JP H0636580 Y2 JPH0636580 Y2 JP H0636580Y2
Authority
JP
Japan
Prior art keywords
integrated circuit
inspection
semiconductor integrated
chip
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1986141971U
Other languages
Japanese (ja)
Other versions
JPS6349237U (en
Inventor
一郎 桑原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP1986141971U priority Critical patent/JPH0636580Y2/en
Publication of JPS6349237U publication Critical patent/JPS6349237U/ja
Application granted granted Critical
Publication of JPH0636580Y2 publication Critical patent/JPH0636580Y2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Tests Of Electronic Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Description

【考案の詳細な説明】 〔産業上の利用分野〕 本考案は半導体集積回路に関し、特に高速動作を要求さ
れる小規模半導体集積回路に関する。
DETAILED DESCRIPTION OF THE INVENTION [Industrial field of application] The present invention relates to a semiconductor integrated circuit, and more particularly to a small scale semiconductor integrated circuit required to operate at high speed.

〔従来の技術〕[Conventional technology]

従来、この種の半導体集積回路は、ウェーハ状態での高
速動作性能の検査は行わず、パッケージに組立ててから
検査していた。
Conventionally, this type of semiconductor integrated circuit has been inspected after being assembled into a package, without inspecting the high-speed operation performance in a wafer state.

〔考案が解決しようとする問題点〕[Problems to be solved by the invention]

上述した従来の半導体集積回路は、ウェーハ状態での検
査においては検査装置の高速動作性能上の制限から集積
回路の高速動作性能の検査ができないので、パッケージ
に組立ててからでなければこの検査ができないという問
題点がある。
In the conventional semiconductor integrated circuit described above, the inspection of the high speed operation performance of the integrated circuit cannot be performed due to the limitation of the high speed operation performance of the inspection device in the inspection in the wafer state. Therefore, this inspection can be performed only after the package is assembled. There is a problem.

又、大規模半導体集積回路ではこの点を解決するため、
集積回路の一部に高速動作性能をウェーハ状態で検査で
きるような検査回路を含んだものもあるが、回路規模が
大きくなるため小規模半導体集積回路では実現できない
という問題点がある。
Also, in order to solve this point in a large-scale semiconductor integrated circuit,
Some integrated circuits include an inspection circuit capable of inspecting high-speed operation performance in a wafer state, but there is a problem that it cannot be realized by a small-scale semiconductor integrated circuit because the circuit scale becomes large.

〔問題点を解決するための手段〕[Means for solving problems]

本考案の半導体集積回路は、複数個の第1の集積回路チ
ップと、入力端子と出力端子と電源端子とを有する高速
動作性能検査回路を複数個にわたって搭載する第2の集
積回路チップとを有している。
The semiconductor integrated circuit of the present invention comprises a plurality of first integrated circuit chips and a second integrated circuit chip on which a plurality of high-speed operation performance inspection circuits each having an input terminal, an output terminal and a power supply terminal are mounted. is doing.

〔実施例〕〔Example〕

次に、本考案について図面を参照して説明する。 Next, the present invention will be described with reference to the drawings.

第1図は本考案の一実施例のブロック図である。FIG. 1 is a block diagram of an embodiment of the present invention.

第1図に示すように、本考案の半導体集積回路1は高速
動作の20個の第1の集積回路チップ(内部回路は図示し
ない)22〜220と、高速動作性能を検査するための高速
動作性能検査回路を分割搭載する5個の第2の集積回路
チップとしての検査チップ3〜7とを有する。なお、検
査チップ3〜7内のボンディング用のパッド8の位置は
集積回路チップ21〜220内のそれと同一とする。
As shown in FIG. 1, the semiconductor integrated circuit 1 of the present invention is 20 first integrated circuit chip of high-speed operation (internal circuit not shown) with 2 2-2 20, for inspecting high-speed operation performance It has test chips 3 to 7 as five second integrated circuit chips on which a high-speed operation performance test circuit is separately mounted. The position of the pad 8 for bonding in the test chip 3-7 to identical integrated circuit chips 2 1 to 2 20.

検査チップ3〜7に分割して搭載する高速動作性能検査
回路は奇数個のインバータ回路をループ状に接続したリ
ング形発振回路9と分周回路10とを備え、単一の検査機
能を有する。
The high-speed operation performance inspection circuit mounted separately on the inspection chips 3 to 7 has a ring type oscillation circuit 9 in which an odd number of inverter circuits are connected in a loop and a frequency dividing circuit 10 and has a single inspection function.

検査チップ3に高速動作性能検査パッド(内部配線は図
示しない)8Pと信号入力パッド8INと信号出力パッド8
OUTのパッドが全て存在し、電源線と入力及び出力信号
線は検査チップ4〜7のパッド8の何れにも接続されて
いない。
High-speed operation performance inspection pad (internal wiring not shown) 8 P , signal input pad 8 IN, and signal output pad 8 on inspection chip 3
There are all OUT pads, and the power supply line and the input and output signal lines are not connected to any of the pads 8 of the inspection chips 4 to 7.

それぞれの集積回路チップ21〜220の特定パッド間にチ
ップ識別抵抗111〜1120が設けられ、それぞれの検査チ
ップ3〜7の同一位置のパッド間にチップ識別抵抗123
〜127が設けられる。チップ識別抵抗111〜1120と、チッ
プ識別抵抗123と、チップ識別抵抗124〜127との抵抗値
は異なる値になっていて、3種のチップの識別ができ
る。
Chip identification resistor 11 1 to 11 20 is provided between each of the special pad of the integrated circuit chip 2 1 to 2 20, the chip identification resistor 12 3 between the same positions of each of the test chip 3-7 pads
~ 12 7 are provided. The chip identification resistors 11 1 to 11 20 , the chip identification resistor 12 3 and the chip identification resistors 12 4 to 12 7 have different resistance values, so that three types of chips can be identified.

ウェーハ検査の自動プロービングの際、検査チップ3の
信号入力パッド8INに外部から信号を入力しリング形発
振回路9を発振させ、ウェーハ状態で測定可能な周波数
となった分周回路10の出力を検査チップ3の信号出力パ
ッド8OUTで測定することにより、集積回路チップ21〜2
20の高速動作性能をウェーハ状態で確認できる。
During automatic wafer inspection probing, a signal is externally input to the signal input pad 8 IN of the inspection chip 3 to oscillate the ring-shaped oscillator circuit 9, and the output of the frequency divider circuit 10 at a frequency that can be measured in the wafer state is output. By measuring at the signal output pad 8 OUT of the inspection chip 3, the integrated circuit chips 2 1 to 2
20 high-speed operation performance can be confirmed in a wafer state.

〔考案の効果〕[Effect of device]

以上説明したように本考案の半導体集積回路は、高速動
作性能検査用の規模の大きな回路を複数個のチップにわ
たって展開して搭載することにより、チップ面積の小さ
い小規模半導体集積回路であってもウェーハ検査時に高
速動作性能を検査することが可能となるので、組立以前
に集積回路の高速性能を確認できるという効果がある。
As described above, the semiconductor integrated circuit of the present invention is a small-scale semiconductor integrated circuit having a small chip area by deploying and mounting a large-scale circuit for high-speed operation performance inspection over a plurality of chips. Since high-speed operation performance can be inspected during wafer inspection, there is an effect that the high-speed performance of the integrated circuit can be confirmed before assembly.

【図面の簡単な説明】[Brief description of drawings]

第1図は本考案の一実施例のブロック図である。 1……半導体集積回路、21〜220……集積回路チップ、
3〜7……検査チップ、8……パッド、8IN……信号入
力パッド、8OUT……信号出力パッド、8P……電源供給パ
ッド、9……リング形発振回路、10……分周回路、111
〜1120,123〜127……チップ識別抵抗。
FIG. 1 is a block diagram of an embodiment of the present invention. 1 ...... semiconductor integrated circuit, 2 1 to 2 20 ...... integrated circuit chip,
3 to 7 ... Inspection chip, 8 ... Pad, 8 IN ...... Signal input pad, 8 OUT ...... Signal output pad, 8 P ...... Power supply pad, 9 ...... Ring type oscillation circuit, 10 ...... Dividing Circuit, 11 1
~ 11 20 , 12 3 ~ 12 7 ... Chip identification resistor.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 【請求項1】半導体ウエハ上に形成された第1及び第2
の集積回路チップであってチップ内の同一位置に入出力
パッドを有する第1及び第2の集積回路チップと、複数
の前記第2の集積回路チップ上にまたがって形成された
所定の検査用回路とを有し、前記検査用回路の入出力端
は共に前記複数のうち一の前記第2の集積回路チップの
前記入出力パッドに接続されていることを特徴とする半
導体集積回路。
1. A first and a second formed on a semiconductor wafer.
Integrated circuit chips having first and second integrated circuit chips each having an input / output pad at the same position in the chip, and a predetermined test circuit formed over the plurality of second integrated circuit chips. And the input / output terminals of the inspection circuit are both connected to the input / output pad of one of the plurality of the second integrated circuit chips.
JP1986141971U 1986-09-16 1986-09-16 Semiconductor integrated circuit Expired - Lifetime JPH0636580Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1986141971U JPH0636580Y2 (en) 1986-09-16 1986-09-16 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1986141971U JPH0636580Y2 (en) 1986-09-16 1986-09-16 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS6349237U JPS6349237U (en) 1988-04-04
JPH0636580Y2 true JPH0636580Y2 (en) 1994-09-21

Family

ID=31050256

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1986141971U Expired - Lifetime JPH0636580Y2 (en) 1986-09-16 1986-09-16 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPH0636580Y2 (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5740951A (en) * 1980-08-25 1982-03-06 Fujitsu Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS6349237U (en) 1988-04-04

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