JPH051756B2 - - Google Patents
Info
- Publication number
- JPH051756B2 JPH051756B2 JP61130825A JP13082586A JPH051756B2 JP H051756 B2 JPH051756 B2 JP H051756B2 JP 61130825 A JP61130825 A JP 61130825A JP 13082586 A JP13082586 A JP 13082586A JP H051756 B2 JPH051756 B2 JP H051756B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- selenium
- recording
- tellurium
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 24
- 230000003287 optical effect Effects 0.000 claims description 21
- 229910001370 Se alloy Inorganic materials 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 18
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 17
- 229910052711 selenium Inorganic materials 0.000 claims description 15
- 239000011669 selenium Substances 0.000 claims description 15
- 229910052763 palladium Inorganic materials 0.000 claims description 12
- 229910052714 tellurium Inorganic materials 0.000 claims description 5
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920000098 polyolefin Polymers 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052798 chalcogen Inorganic materials 0.000 description 1
- 150000001787 chalcogens Chemical class 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 239000011116 polymethylpentene Substances 0.000 description 1
- 229920000306 polymethylpentene Polymers 0.000 description 1
- -1 polymethylpentyl Polymers 0.000 description 1
- 125000003748 selenium group Chemical group *[Se]* 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B7/2433—Metals or elements of Groups 13, 14, 15 or 16 of the Periodic Table, e.g. B, Si, Ge, As, Sb, Bi, Se or Te
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24306—Metals or metalloids transition metal elements of groups 3-10
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24316—Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
- G11B7/2531—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising glass
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
- G11B7/2533—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising resins
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明はレーザ光によつて情報を記録再生する
ことのできる光記録媒体に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an optical recording medium on which information can be recorded and reproduced using laser light.
[従来の技術]
レーザ光によつて情報を媒体に記録し、かつ再
生する光デイスクメモリは、記録密度が高いこと
から大容量記録装置として優れた特徴と有してい
る。この光記録媒体材料としては、テルル(Te)
等のカルコゲン元素又はこれらの化合物が使用さ
れている(特公昭47−26897号公報)。とくにテル
ル−セレン系合金はよく使用されている(特公昭
54−41902号公報、特公昭57−7919号公報、特公
昭57−56058号公報)。[Prior Art] Optical disk memories, which record and reproduce information on a medium using laser light, have an excellent feature as a large-capacity recording device because of their high recording density. The material for this optical recording medium is tellurium (Te).
Chalcogen elements such as or compounds thereof are used (Japanese Patent Publication No. 47-26897). In particular, tellurium-selenium alloys are often used (Tokuko Showa).
54-41902, Japanese Patent Publication No. 57-7919, Japanese Patent Publication No. 57-56058).
近年、記録装置を小型化するため、レーザ光源
としては半導体レーザが使用されてきている。半
導体レーザは発振波長が8000Å前後であるが、テ
ルル−セレン系合金はこの波長帯にも比較的よく
適合し、適度な反射率と適度な吸収率が得られる
{フイジカ・ステイタス・ソリダイ、7、189、
1964(phys.stat.sol.7、189、1964)}。 In recent years, in order to downsize recording devices, semiconductor lasers have been used as laser light sources. Semiconductor lasers have an oscillation wavelength of around 8000 Å, and tellurium-selenium alloys are relatively well suited to this wavelength range, and can provide moderate reflectance and moderate absorption {Fijica Status Solidai, 7 , 189,
1964 (phys.stat.sol. 7 , 189, 1964)}.
このテルル−セレン系合金を光記録層として用
いた光記録媒体は第2図に示すような構成になつ
ている。すなわち基板1に隣接してテルル−セレ
ン系合金よりなる記録層21が設けられている。
記録用レーザ光は基板1を通して記録層21に集
光照射され、ピツト22が形成される。基板1と
してはポリカーボネート、ポリオレフイン、ポリ
メチルペンテル、アクリル、エポキシ樹脂等の合
成樹脂やガラスが使用され、基板1にはピツトが
同心円状あるいはスパイラル状に一定間隔で精度
よく記録されるように通常案内溝が設けられてい
る。 An optical recording medium using this tellurium-selenium alloy as an optical recording layer has a structure as shown in FIG. That is, a recording layer 21 made of a tellurium-selenium alloy is provided adjacent to the substrate 1.
The recording laser beam is focused and irradiated onto the recording layer 21 through the substrate 1, and pits 22 are formed. The substrate 1 is made of synthetic resin such as polycarbonate, polyolefin, polymethylpentyl, acrylic, or epoxy resin, or glass, and the substrate 1 is usually guided so that pits are recorded concentrically or spirally at regular intervals. A groove is provided.
[発明が解決しようとする問題点]
しかしながら前記したような従来の光記録媒体
において、記録層として用いられているテルル−
セレン系合金ではピツトをトラツク1周にわたつ
て均一に形成することは困難なために充分に良好
な記録再生特性は得られなかつた。また記録によ
り大きなピツトが形成されるため高密度記録がで
きないとともに、記録パワー変動に対する余裕度
も小さいので実用的に問題があつた。[Problems to be Solved by the Invention] However, in the conventional optical recording medium as described above, tellurium, which is used as a recording layer,
With selenium-based alloys, it is difficult to form pits uniformly over one circumference of the track, so that sufficiently good recording and reproducing characteristics cannot be obtained. Furthermore, since large pits are formed during recording, high-density recording is not possible, and there is little margin for fluctuations in recording power, which poses a practical problem.
本発明の目的は、耐候性がよく、かつ高密度記
録が可能で信号品質の良好な実用的な光記録媒体
を提供することにある。 An object of the present invention is to provide a practical optical recording medium that has good weather resistance, allows high-density recording, and has good signal quality.
[問題点を解決するための手段]
本発明は基板と、レーザ光によつて一部が選択
的に除去されて情報を記録する前記基板上に形成
された記録層とからなる光記録媒体において、前
記記録層がセレン層、パラジウム層、テルル−セ
レン合金層を順次基板上に積層したものであるこ
とを特徴とする光記録媒体である。[Means for Solving the Problems] The present invention provides an optical recording medium comprising a substrate and a recording layer formed on the substrate, a portion of which is selectively removed by laser light to record information. , an optical recording medium characterized in that the recording layer is a selenium layer, a palladium layer, and a tellurium-selenium alloy layer laminated in sequence on a substrate.
本発明において第1図に示すように基板1上に
セレン層2、パラジウム層3、テルル−セレン合
金層4が順次積層されて記録層を形成する。 In the present invention, as shown in FIG. 1, a selenium layer 2, a palladium layer 3, and a tellurium-selenium alloy layer 4 are sequentially laminated on a substrate 1 to form a recording layer.
ここでセレン層の膜厚は5〜100Åの範囲、パ
ラジウム層の膜厚は0.5〜50Åの範囲、テルル−
セレン合金層の膜厚は100〜500Åの範囲が記録再
生特性、耐候性の観点から望ましく、テルル−セ
レン合金の組成比はセレンの原子%が5〜50の範
囲が記録再生特性、耐候性の観点から望ましい。
なお、ここにいう0.5〜50Åのパラジウム層とい
うのは重量平均に相当する膜厚であり、実際には
不連続膜となつている。 Here, the thickness of the selenium layer is in the range of 5 to 100 Å, the thickness of the palladium layer is in the range of 0.5 to 50 Å, and the thickness of the tellurium layer is in the range of 0.5 to 50 Å.
The thickness of the selenium alloy layer is preferably in the range of 100 to 500 Å from the viewpoint of recording/reproducing characteristics and weather resistance, and the composition ratio of the tellurium-selenium alloy is preferably in the range of 5 to 50 atomic % of selenium to improve recording/reproducing characteristics and weather resistance. Desirable from this point of view.
Note that the palladium layer having a thickness of 0.5 to 50 Å here corresponds to the weight average thickness, and is actually a discontinuous film.
また基板としてはポリカーボネート、ポリオレ
フイン、ポリメチルペンテン、アクリル、エポキ
シ樹脂等の合成樹脂やガラスなど通常使用されて
いるものが用いられる。 As the substrate, commonly used materials such as synthetic resins such as polycarbonate, polyolefin, polymethylpentene, acrylic, and epoxy resins, and glass are used.
本発明の光記録媒体は、基板上にセレン層、パ
ラジウム層、テルル−セレン合金層を順に真空蒸
着によつて成膜することにより製造することがで
きる。テルル−セレン合金層の成膜はテルル−セ
レン合金材料からの1源蒸着でも、あるいはテル
ル層とセレンとからの2源蒸着でもよい。 The optical recording medium of the present invention can be manufactured by sequentially forming a selenium layer, a palladium layer, and a tellurium-selenium alloy layer on a substrate by vacuum evaporation. The tellurium-selenium alloy layer may be formed by single-source deposition from a tellurium-selenium alloy material, or by dual-source deposition from a tellurium layer and selenium.
[作 用]
基板とテルル−セレン合金層の間にセレン層と
パラジウム層を介在させることによつてピツトが
大きく拡がらなくなり、優れた光記録媒体を得る
ことができる。これはピツト形成による反射率変
化の主要因であるテルル−セレン合金層に最初に
小穴が形成されるのが、セレン層とパラジウム層
の形成により容易に確実におこるようになつたこ
とと、テルル−セレン合金層の有無による表面エ
ネルギーの差がセレン層とパラジウム層の形成に
より変化したためと思われる。[Function] By interposing the selenium layer and the palladium layer between the substrate and the tellurium-selenium alloy layer, pits are prevented from expanding significantly, and an excellent optical recording medium can be obtained. This is because the initial formation of small holes in the tellurium-selenium alloy layer, which is the main cause of reflectance changes due to pit formation, has become easier and more reliable due to the formation of the selenium and palladium layers. -This seems to be because the difference in surface energy due to the presence or absence of the selenium alloy layer changed due to the formation of the selenium layer and palladium layer.
[実施例] 以下本発明の実施例について説明する。[Example] Examples of the present invention will be described below.
実施例 1
内径15mm、外径130mm、厚さ1.2mmのポリカーボ
ネート樹脂デイスク基板を真空蒸着装置内に入
れ、6×10-6Torr以下に排気した。まず、抵抗
加熱蒸着によりセレン層を50Å厚蒸着し、次に電
子ビーム加熱蒸着によりパラジウムを水晶振動子
の周波数変化から換算した値で1Å厚蒸着し、最
後に抵抗加熱蒸着によりテルル−セレン合金を原
子%で79対21になるように225Å厚蒸着した。こ
の光デイスクを95℃で1時間アニールしたのち、
波長8300Åにおける基板入射反射率を測定したと
ころ35%であつた。波長8300Åの半導体レーザ光
を基板を通して入射して、1.5μmφ程度に絞り、
媒体線速度5..6m/sec、記録周波数3.77MHz、記
録パルス幅70nsecの条件で記録し、0.7mWで再
生した。記録パワー6.0mWにおいて、バンド幅
30kHzのキヤリアーとノイズとの比(C/N)は
49dBと良好であつた。又、C/Nが45dB以上得
られる記録パワー領域は5.5mWから8.5mWと広
い範囲であつた。Example 1 A polycarbonate resin disk substrate with an inner diameter of 15 mm, an outer diameter of 130 mm, and a thickness of 1.2 mm was placed in a vacuum evaporation apparatus, and the vacuum was evacuated to 6×10 -6 Torr or less. First, a selenium layer is deposited to a thickness of 50 Å by resistance heating evaporation, then palladium is deposited to a thickness of 1 Å by electron beam heating evaporation at a value calculated from the frequency change of the crystal resonator, and finally a tellurium-selenium alloy is deposited by resistance heating evaporation. It was deposited to a thickness of 225 Å so that the ratio of atomic % was 79:21. After annealing this optical disk at 95℃ for 1 hour,
The substrate incident reflectance at a wavelength of 8300 Å was measured and was 35%. Semiconductor laser light with a wavelength of 8300 Å is incident through the substrate and focused to approximately 1.5 μmφ.
Recording was performed under the conditions of a medium linear velocity of 5.6 m/sec, a recording frequency of 3.77 MHz, and a recording pulse width of 70 nsec, and reproduction was performed at 0.7 mW. Bandwidth at recording power 6.0mW
The carrier to noise ratio (C/N) at 30kHz is
It was good at 49dB. Further, the recording power range in which a C/N of 45 dB or more was obtained was wide, from 5.5 mW to 8.5 mW.
比較のための225Å厚のテルル−セレン合金
(組成比は原子%で79対21)を記録層とする光デ
イスクを同様に評価したところ、記録パワー
8.0mWではピツトが形成されず、8.5mWで48dB
のC/Nが得られたが、9.0mWではピツトが大
きくなりすぎてC/Nは41dBに低下し、使用可
能な記録パワー領域は非常に狭い範囲であつた。 For comparison, an optical disk with a recording layer made of a 225 Å thick tellurium-selenium alloy (composition ratio 79:21 at %) was evaluated in the same way, and the recording power was
No pit is formed at 8.0mW, 48dB at 8.5mW
However, at 9.0 mW, the pits became too large and the C/N decreased to 41 dB, and the usable recording power range was very narrow.
又、比較のための50Å厚のセレンと225Å厚の
テルル−セレン合金(組成比は原子%で79対21)
を順次積層して記録層とする光デイスクを同様に
評価したところ、記録パワー6.0mWにおいて最
高のC/Nが得られたがその値は44dBと低かつ
た。これは記録後のノイズの上昇が大きいためで
ある。 Also, for comparison, 50 Å thick selenium and 225 Å thick tellurium-selenium alloy (composition ratio is 79:21 in atomic percent).
When an optical disk in which the recording layer was made by sequentially laminating the following layers was similarly evaluated, the highest C/N was obtained at a recording power of 6.0 mW, but the value was as low as 44 dB. This is because the noise increases significantly after recording.
次に、本実施例のデイスクを70℃80%の高温高
湿度の環境に60時間保存した後、上記特性を調べ
たが変化はなく、耐候性に優れた光記録媒体であ
ることが確認された。 Next, after storing the disk of this example in a high temperature and high humidity environment at 70°C and 80% for 60 hours, the above characteristics were examined, but there was no change, confirming that it is an optical recording medium with excellent weather resistance. Ta.
実施例 2
実施例1と同様にして、40Å厚のセレン層、2
Å厚のパラジウム層、250Å厚のテルル−セレン
合金層(組成比は原子%で79対21)を順次積層し
て記録層とする光デイスクを作製し、実施例1と
同様にして評価した。6.0mWの記録パワーにに
おいてC/Nは48dBと良好であり、45dB以上の
C/Nが得られる記録パワー領域は5.5mWから
8.0mWと広い範囲であつた。Example 2 In the same manner as in Example 1, a 40 Å thick selenium layer, 2
An optical disk having a recording layer formed by sequentially laminating a palladium layer with a thickness of Å and a tellurium-selenium alloy layer with a thickness of 250 Å (composition ratio: 79:21 in atomic %) was prepared and evaluated in the same manner as in Example 1. At a recording power of 6.0 mW, the C/N is good at 48 dB, and the recording power range where a C/N of 45 dB or more can be obtained is from 5.5 mW.
It had a wide range of 8.0mW.
[発明の効果]
以上説明したように本発明の光記録媒体は耐候
性に優れ、かつ高度記録が可能で信号品質が良好
であるため実用上有用なものである。[Effects of the Invention] As explained above, the optical recording medium of the present invention has excellent weather resistance, allows high-altitude recording, and has good signal quality, so it is practically useful.
第1図は本発明の光記録媒体の一実施例を示す
部分断面図、第2図は従来の光記録媒体を示す部
分断面図である。
1…基板、2…セレン層、3…パラジウム層、
4…テルル−セレン合金層、21…記録層、22
…ピツト。
FIG. 1 is a partial sectional view showing an embodiment of the optical recording medium of the present invention, and FIG. 2 is a partial sectional view showing a conventional optical recording medium. 1... Substrate, 2... Selenium layer, 3... Palladium layer,
4... Tellurium-selenium alloy layer, 21... Recording layer, 22
...Pitsuto.
Claims (1)
去されて情報を記録する前記基板上に形成された
記録層とからなる光記録媒体において、前記記録
層がセレン層、パラジウム層、テルル−セレン合
金層を順次基板上に積層したものであることを特
徴とする光記録媒体。1. An optical recording medium consisting of a substrate and a recording layer formed on the substrate, a portion of which is selectively removed by laser light to record information, wherein the recording layer is made of a selenium layer, a palladium layer, a tellurium layer, etc. - An optical recording medium characterized in that selenium alloy layers are sequentially laminated on a substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61130825A JPS62286794A (en) | 1986-06-04 | 1986-06-04 | Optical recording medium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61130825A JPS62286794A (en) | 1986-06-04 | 1986-06-04 | Optical recording medium |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS62286794A JPS62286794A (en) | 1987-12-12 |
JPH051756B2 true JPH051756B2 (en) | 1993-01-08 |
Family
ID=15043590
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61130825A Granted JPS62286794A (en) | 1986-06-04 | 1986-06-04 | Optical recording medium |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62286794A (en) |
-
1986
- 1986-06-04 JP JP61130825A patent/JPS62286794A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS62286794A (en) | 1987-12-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPH0481955B2 (en) | ||
JPH051756B2 (en) | ||
JPH051757B2 (en) | ||
JP2689429B2 (en) | Optical recording medium | |
JPH051755B2 (en) | ||
JPH051754B2 (en) | ||
JPH051752B2 (en) | ||
JPH051758B2 (en) | ||
JP2508055B2 (en) | Optical recording medium manufacturing method | |
JPH0553020B2 (en) | ||
JPH051749B2 (en) | ||
JPH051751B2 (en) | ||
JP2581086B2 (en) | Optical recording medium | |
JP2508053B2 (en) | Optical recording medium manufacturing method | |
JPH051750B2 (en) | ||
JP2581087B2 (en) | Optical recording medium | |
JPH051748B2 (en) | ||
JP2508054B2 (en) | Optical recording medium manufacturing method | |
JP2508188B2 (en) | Optical recording medium manufacturing method | |
JPH0481951B2 (en) | ||
JPH0553018B2 (en) | ||
JPH048859B2 (en) | ||
JPH0481956B2 (en) | ||
JPH0481957B2 (en) | ||
JPH0379776B2 (en) |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |