JPH051751B2 - - Google Patents
Info
- Publication number
- JPH051751B2 JPH051751B2 JP61122684A JP12268486A JPH051751B2 JP H051751 B2 JPH051751 B2 JP H051751B2 JP 61122684 A JP61122684 A JP 61122684A JP 12268486 A JP12268486 A JP 12268486A JP H051751 B2 JPH051751 B2 JP H051751B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- recording
- substrate
- selenium
- tellurium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000011669 selenium Substances 0.000 claims description 24
- 230000003287 optical effect Effects 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 16
- 229910052711 selenium Inorganic materials 0.000 claims description 13
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 11
- 229910052714 tellurium Inorganic materials 0.000 claims description 11
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 11
- 125000003748 selenium group Chemical group *[Se]* 0.000 claims description 2
- 229910001370 Se alloy Inorganic materials 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000011116 polymethylpentene Substances 0.000 description 2
- 229920000306 polymethylpentene Polymers 0.000 description 2
- 229920000098 polyolefin Polymers 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052798 chalcogen Inorganic materials 0.000 description 1
- 150000001787 chalcogens Chemical class 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B7/2433—Metals or elements of Groups 13, 14, 15 or 16 of the Periodic Table, e.g. B, Si, Ge, As, Sb, Bi, Se or Te
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24312—Metals or metalloids group 14 elements (e.g. Si, Ge, Sn)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24314—Metals or metalloids group 15 elements (e.g. Sb, Bi)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24316—Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
- G11B7/2533—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising resins
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明はレーザ光によつて情報を記録再生する
ことのできる光記録媒体に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an optical recording medium on which information can be recorded and reproduced using laser light.
［従来の技術］
レーザ光によつて情報を媒体に記録し、かつ再
生する光デイスクメモリは、記録密度が高いこと
から大容量記録装置として優れた特徴を有してい
る。この光記録媒体材料としては、テルル（Te）
等のカルコゲン元素又はこれらの化合物が使用さ
れている（特公昭47−26897号公報）。とくにテル
ル−セレン系合金はよく使用されている（特公昭
54−41902号公報，特公昭57−7919号，特公昭57
−56058号公報）。[Prior Art] Optical disk memories, which record and reproduce information on a medium using laser light, have excellent characteristics as large-capacity recording devices because of their high recording density. The material for this optical recording medium is tellurium (Te).
Chalcogen elements such as or compounds thereof are used (Japanese Patent Publication No. 47-26897). In particular, tellurium-selenium alloys are often used (Tokuko Showa).
Publication No. 54-41902, Special Publication No. 57-7919, Special Publication No. 1983
−56058).
近年、記録装置を小型化するため、レーザ光源
としては半導体レーザが使用されてきている。半
導体レーザは発振波長が8000Å前後であるが、テ
ルル−セレン系合金はこの波長帯にも比較的よく
適合し、適度な反射率と適度な吸収率が得られる
｛フイジカ・ステイタス・ソリダイ，７，189，
1964（phys.stat.sol，７，189，1964）｝。 In recent years, in order to downsize recording devices, semiconductor lasers have been used as laser light sources. Semiconductor lasers have an oscillation wavelength of around 8000 Å, and tellurium-selenium alloys are relatively well suited to this wavelength range, and can provide moderate reflectance and moderate absorption {Fijica Status Solidai, 7 , 189,
1964 (phys.stat.sol, 7 , 189, 1964)}.
このテルル−セレン系合金を光記録層として用
いた光記録媒体は第２図に示すような構成になつ
ている。すなわち基板１に隣接してテルル−セレ
ン系合金よりなる記録層２１が設けられている。
記録用レーザ光は基板１を通して記録層２１に集
光照射され、ピツト２２が形成される。基板１と
してはポリカーボネート、ポリオレフイン、ポリ
メチルペンテン、アクリル、エポキシ樹脂等の合
成樹脂やガラスが使用され、基板１にはピツトが
同心円状あるいはスパイラル状に一定間隔で精度
よく記録されるように通常案内溝が設けられてい
る。 An optical recording medium using this tellurium-selenium alloy as an optical recording layer has a structure as shown in FIG. That is, a recording layer 21 made of a tellurium-selenium alloy is provided adjacent to the substrate 1.
The recording laser beam is focused and irradiated onto the recording layer 21 through the substrate 1, and pits 22 are formed. The substrate 1 is made of synthetic resin such as polycarbonate, polyolefin, polymethylpentene, acrylic, or epoxy resin, or glass, and is usually guided so that pits are recorded concentrically or spirally at regular intervals. A groove is provided.
［発明が解決しようとする問題点］
しかしながら、前記したような従来の光記録媒
体において、記録層として用いられているテルル
−セレン系合金はその組成を制御することは容易
ではなく、そのため量産性に問題があつた。又、
ピツトをトラツク１周にわたつて均一に形成する
ことは困難であるため、充分に良好な記録再生特
性は得られなかつた。[Problems to be Solved by the Invention] However, in the conventional optical recording media as described above, it is not easy to control the composition of the tellurium-selenium alloy used as the recording layer, and therefore mass production is difficult. There was a problem. or,
Since it is difficult to form pits uniformly over one circumference of the track, sufficiently good recording and reproducing characteristics cannot be obtained.
一方、本発明者らは、基板の上にセレン層、テ
ルル層、セレン層を順次積層して記録層とするこ
とにより、量産性および耐候性に優れ、かつ、ト
ラツク１周にわたつてピツトを均一に形成でき、
良好な記録再生特性を有する光記録媒体となるこ
とを見出し、すでに提案している。 On the other hand, the present inventors succeeded in laminating a selenium layer, a tellurium layer, and a selenium layer on a substrate to form a recording layer, thereby achieving excellent mass productivity and weather resistance, and making it possible to maintain pits over one round of the track. Can be formed uniformly,
It has been discovered that the method can be used as an optical recording medium with good recording and reproducing characteristics, and has already been proposed.
本発明者はこれをさらに改善したもので、量産
性および耐候性に優れ、かつ高感度で信号品質の
良好な光記録媒体を提供することを目的とする。 The present inventor has further improved this, and aims to provide an optical recording medium that is excellent in mass production and weather resistance, and has high sensitivity and good signal quality.
［問題点を解決するための手段］
本発明は基板と、レーザ光によつて一部が選択
的に除去されて情報を記録する前記基板上に形成
された記録層とからなる光記録媒体において、前
記記録層がセレン層、テルル層、鉛層、セレン層
を順次基板上に積層したものであることを特徴と
する光記録媒体である。[Means for Solving the Problems] The present invention provides an optical recording medium comprising a substrate and a recording layer formed on the substrate, a portion of which is selectively removed by laser light to record information. , an optical recording medium characterized in that the recording layer is a selenium layer, a tellurium layer, a lead layer, and a selenium layer sequentially laminated on a substrate.
本発明においては第１図に示すように基板１上
にセレン層２、テルル層３、鉛層４、セレン層５
を順次積層して記録層を形成する。鉛層４を形成
することにより、記録により形成されるピツトが
大きく拡がらないようになる。 In the present invention, as shown in FIG.
are sequentially laminated to form a recording layer. By forming the lead layer 4, pits formed by recording can be prevented from expanding significantly.
上下のセレン層の膜厚はともにそれぞれ５〜
100Åの範囲、テルル層の膜厚は100〜500Åの範
囲、鉛層の膜厚は１〜50Åの範囲が記録再生特
性、耐候性の観点から望ましい。また基板として
はポリカーボネート、ポリオレフイン、ポリメチ
ルペンテン、アクリル、エポキシ樹脂等の合成樹
脂やガラスなど通常使用されるているものが用い
られる。 Both the upper and lower selenium layers have a thickness of 5~
From the viewpoint of recording and reproducing characteristics and weather resistance, it is desirable that the thickness of the tellurium layer be in the range of 100 Å, the thickness of the tellurium layer in the range of 100 to 500 Å, and the thickness of the lead layer in the range of 1 to 50 Å. As the substrate, commonly used materials such as synthetic resins such as polycarbonate, polyolefin, polymethylpentene, acrylic, and epoxy resins, and glass are used.
本発明の光記録媒体は、基板上にセレン、テル
ル、鉛およびセレンを順に真空蒸着させることに
よつて製造することができる。 The optical recording medium of the present invention can be manufactured by sequentially vacuum-depositing selenium, tellurium, lead, and selenium onto a substrate.
［作用］
テルル層とセレン層の間に鉛層を介在させるこ
とによつてピツトが大きく拡がらなくなり、優れ
た光記録媒体を得ることができる。これはピツト
形成による反射率変化の主要因であるテルル層の
表面張力が鉛層の形成により変化することによつ
てピツトが拡がりにくくなるためであると思われ
る。[Function] By interposing the lead layer between the tellurium layer and the selenium layer, pits are prevented from expanding significantly, and an excellent optical recording medium can be obtained. This is thought to be because the surface tension of the tellurium layer, which is the main factor in the change in reflectance due to the formation of pits, changes due to the formation of the lead layer, making it difficult for the pits to spread.
ピツトが大きく拡がらないのでピツトをつめて
記録でき、高密度記録が可能となるとともに記録
パワー変動に対する余裕度も大きくなるので実用
的な光記録媒体となる。 Since the pits do not widen greatly, recording can be performed with the pits packed together, making it possible to perform high-density recording and increase the margin for fluctuations in recording power, making it a practical optical recording medium.
［実施例］ 以下本発明の実施例について説明する。[Example] Examples of the present invention will be described below.
実施例 １
内径15mm、外径130mm、厚さ1.2mmのポリカーボ
ネート樹脂デイスク基板を真空蒸着装置内に入
れ、６×10-6Torr以下に排気した。蒸発源とし
ては、第１の抵抗加熱用ボートにテルル（Te）
を入れ、第２の抵抗加熱用ボートにセレン（Se）
を入れ、電子ビーム加熱用るつぼに鉛（Pb）を
入れた。まずSeを80Å厚蒸着し、次にTeを225Å
厚蒸着し、次にPbを水晶振動子の周波数変化か
らの換算で２Å厚蒸着し、最後にSeを80Å厚蒸
着した。この光デイスクを95℃で１時間アニール
したのち、波長8300Åにおける基板入射反射率を
測定したところ35％であつた。波長8300Åの半導
体レーザ光を基板を通して入射して1.5μmφ程度
に絞り、媒体線速度5.6m／sec、記録周波数
3.77MHz、記録パルス幅70nsecの条件で記録し、
0.7mWで再生した。記録パワーは5.5mWにおい
て、バンド幅30kHzのキヤリアーとノイズとの比
（Ｃ／Ｎ）は50dBと良好であつた。又、Ｃ／Ｎが
45dB以上得られる記録パワー領域は5.0mWから
7.5mWと広範囲であつた。比較のための80Å厚
のSe、225Å厚のTe、80Å厚のSeの光デイスク
では、記録パワー5.0mWにおいてＣ／Ｎは48dB
であり、Ｃ／Ｎが45dB以上得られる記録パワー
領域は5.0mWから6.5mWと狭い範囲であつた。Example 1 A polycarbonate resin disk substrate having an inner diameter of 15 mm, an outer diameter of 130 mm, and a thickness of 1.2 mm was placed in a vacuum evaporation apparatus, and the vacuum was evacuated to 6×10 -6 Torr or less. As an evaporation source, tellurium (Te) was used in the first resistance heating boat.
and put selenium (Se) into the second resistance heating boat.
and lead (Pb) was placed in an electron beam heating crucible. First, Se is deposited to a thickness of 80 Å, then Te is deposited to a thickness of 225 Å.
Then, Pb was deposited to a thickness of 2 Å calculated from the frequency change of the crystal resonator, and finally Se was deposited to a thickness of 80 Å. After annealing this optical disk at 95° C. for 1 hour, the substrate incident reflectance at a wavelength of 8300 Å was measured and found to be 35%. Semiconductor laser light with a wavelength of 8300 Å is incident through the substrate and focused to approximately 1.5 μmφ, with a medium linear velocity of 5.6 m/sec and a recording frequency.
Recorded under the conditions of 3.77MHz, recording pulse width 70nsec,
Played at 0.7mW. At a recording power of 5.5 mW, the carrier-to-noise ratio (C/N) with a bandwidth of 30 kHz was as good as 50 dB. Also, the C/N
The recording power range that can obtain 45dB or more is from 5.0mW
It had a wide range of 7.5mW. For comparison, 80 Å thick Se, 225 Å thick Te, and 80 Å thick Se optical disks have a C/N of 48 dB at a recording power of 5.0 mW.
The recording power range in which a C/N of 45 dB or more could be obtained was a narrow range of 5.0 mW to 6.5 mW.
次に、本実施例のデイスクを70℃80％の高温高
湿度の環境に60時間保存した後、上記特性を調べ
たが変化はなく、耐候性に優れた光記録媒体であ
ることが確認された。 Next, after storing the disk of this example in a high temperature and high humidity environment at 70°C and 80% for 60 hours, the above characteristics were examined, but there was no change, confirming that it is an optical recording medium with excellent weather resistance. Ta.
実施例 ２
実施例１と同様にして80Å厚のSe、225Å厚の
Te、８Å厚のPb、80Å厚のSeと順次積層して光
記録媒体を作製した。実施例１と同様の記録再生
実験により、5.5mWの記録パワーにおいてＣ／
Ｎは50dBと良好であり、45dB以上のＣ／Ｎを得
られる記録パワー領域は5.0mWから7.5mWと広
範囲であつた。Example 2 In the same manner as in Example 1, 80 Å thick Se, 225 Å thick Se
An optical recording medium was fabricated by sequentially stacking Te, 8 Å thick Pb, and 80 Å thick Se. By the same recording and reproducing experiment as in Example 1, C/
The N was good at 50 dB, and the recording power range in which a C/N of 45 dB or more could be obtained was wide from 5.0 mW to 7.5 mW.
実施例 ３
実施例１と同様にして20Å厚のSe、240Å厚の
Te、４Å厚のPb、20Å厚のSeと順次積層して光
記録媒体を作製した。実施例１と同様の記録再生
実験により、5.5mWの記録パワーにおいてＣ／
Ｎは49dBと良好であり、45dB以上のＣ／Ｎを得
られる記録パワー領域は5.0mWから7.5mWと広
範囲であつた。Example 3 In the same manner as in Example 1, 20 Å thick Se, 240 Å thick Se
An optical recording medium was fabricated by sequentially stacking Te, 4 Å thick Pb, and 20 Å thick Se. By the same recording and reproducing experiment as in Example 1, C/
N was good at 49 dB, and the recording power range in which a C/N of 45 dB or more could be obtained was wide from 5.0 mW to 7.5 mW.
［発明の効果］
以上説明したように本発明の光記録媒体は量産
性および耐候性に優れているばかりでなく、高感
度で信号品質の良好なものである。[Effects of the Invention] As explained above, the optical recording medium of the present invention not only has excellent mass productivity and weather resistance, but also has high sensitivity and good signal quality.
第１図は本発明の光記録媒体の一実施例を示す
部分断面図、第２図は従来の光記録媒体を示す部
分断面図である。
１……基板、２，５……セレン層、３……テル
ル層、４……鉛層、２１……記録層、２２……ピ
ツト。
FIG. 1 is a partial sectional view showing an embodiment of the optical recording medium of the present invention, and FIG. 2 is a partial sectional view showing a conventional optical recording medium. DESCRIPTION OF SYMBOLS 1... Substrate, 2, 5... Selenium layer, 3... Tellurium layer, 4... Lead layer, 21... Recording layer, 22... Pit.
Claims (1)
去されて情報を記録する前記基板上に形成された
記録層とからなる光記録媒体において、前記記録
層がセレン層、テルル層、鉛層、セレン層を順次
基板上に積層したものであることを特徴とする光
記録媒体。1. An optical recording medium comprising a substrate and a recording layer formed on the substrate, a portion of which is selectively removed by laser light to record information, wherein the recording layer is a selenium layer, a tellurium layer, a lead layer, etc. An optical recording medium characterized in that a selenium layer and a selenium layer are sequentially laminated on a substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61122684A JPS62278092A (en) | 1986-05-27 | 1986-05-27 | Optical recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61122684A JPS62278092A (en) | 1986-05-27 | 1986-05-27 | Optical recording medium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62278092A JPS62278092A (en) | 1987-12-02 |
| JPH051751B2 true JPH051751B2 (en) | 1993-01-08 |
Family
ID=14842066
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61122684A Granted JPS62278092A (en) | 1986-05-27 | 1986-05-27 | Optical recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62278092A (en) |
-
1986
- 1986-05-27 JP JP61122684A patent/JPS62278092A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62278092A (en) | 1987-12-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |