JPH051755B2 - - Google Patents
Info
- Publication number
- JPH051755B2 JPH051755B2 JP61128464A JP12846486A JPH051755B2 JP H051755 B2 JPH051755 B2 JP H051755B2 JP 61128464 A JP61128464 A JP 61128464A JP 12846486 A JP12846486 A JP 12846486A JP H051755 B2 JPH051755 B2 JP H051755B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- recording
- substrate
- selenium
- tellurium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 37
- 230000003287 optical effect Effects 0.000 claims description 21
- 239000011669 selenium Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 19
- 229910052763 palladium Inorganic materials 0.000 claims description 17
- 229910052711 selenium Inorganic materials 0.000 claims description 15
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 13
- 229910052714 tellurium Inorganic materials 0.000 claims description 13
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 13
- 229910001370 Se alloy Inorganic materials 0.000 claims 4
- 230000015572 biosynthetic process Effects 0.000 claims 3
- 238000010438 heat treatment Methods 0.000 claims 3
- 239000004065 semiconductor Substances 0.000 claims 3
- 229920000178 Acrylic resin Polymers 0.000 claims 2
- 239000004925 Acrylic resin Substances 0.000 claims 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims 2
- 239000003822 epoxy resin Substances 0.000 claims 2
- 239000011521 glass Substances 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 229920000515 polycarbonate Polymers 0.000 claims 2
- 239000004417 polycarbonate Substances 0.000 claims 2
- 229920000647 polyepoxide Polymers 0.000 claims 2
- 229920000098 polyolefin Polymers 0.000 claims 2
- 125000003748 selenium group Chemical group *[Se]* 0.000 claims 2
- 230000035945 sensitivity Effects 0.000 claims 2
- 229920003002 synthetic resin Polymers 0.000 claims 2
- 239000000057 synthetic resin Substances 0.000 claims 2
- 238000010521 absorption reaction Methods 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- 238000000137 annealing Methods 0.000 claims 1
- 229910052798 chalcogen Inorganic materials 0.000 claims 1
- 150000001787 chalcogens Chemical class 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 claims 1
- 238000010894 electron beam technology Methods 0.000 claims 1
- 238000001704 evaporation Methods 0.000 claims 1
- 230000008020 evaporation Effects 0.000 claims 1
- 230000006870 function Effects 0.000 claims 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 claims 1
- 238000010030 laminating Methods 0.000 claims 1
- 230000015654 memory Effects 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 230000010355 oscillation Effects 0.000 claims 1
- 229920005668 polycarbonate resin Polymers 0.000 claims 1
- 239000004431 polycarbonate resin Substances 0.000 claims 1
- 239000011116 polymethylpentene Substances 0.000 claims 1
- 229920000306 polymethylpentene Polymers 0.000 claims 1
- -1 polymethylpentyl Polymers 0.000 claims 1
- 238000007738 vacuum evaporation Methods 0.000 claims 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B7/2433—Metals or elements of Groups 13, 14, 15 or 16 of the Periodic Table, e.g. B, Si, Ge, As, Sb, Bi, Se or Te
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24306—Metals or metalloids transition metal elements of groups 3-10
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24316—Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
- G11B7/2531—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising glass
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
- G11B7/2533—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising resins
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Description
第１図は本発明の光記録媒体の一実施例を示す
部分断面図、第２図は従来の光記録媒体を示す部
分断面図である。
１…基板、２，６…セレン層、３，５…パラジ
ウム層、４…テルル層、２１…記録層、２２…ピ
ツト。
FIG. 1 is a partial sectional view showing an embodiment of the optical recording medium of the present invention, and FIG. 2 is a partial sectional view showing a conventional optical recording medium. DESCRIPTION OF SYMBOLS 1... Substrate, 2, 6... Selenium layer, 3, 5... Palladium layer, 4... Tellurium layer, 21... Recording layer, 22... Pit.
Claims (1)
去されて情報を記録する前記基板上に形成された
記録層とからなる光記録媒体において、前記記録
層がセレン層、パラジウム層、テルル層、パラジ
ウム層、セレン層を順次基板上に積層したもので
あることを特徴とする光記録媒体。 ※説［産業上の利用分野］ 本発明はレーザ光によつて情報を記録再生する
ことのできる光記録媒体に関するものである。 ［従来の技術］ レーザ光によつて情報を媒体に記録し、かつ再
生する光デイスクメモリは、記録密度が高いこと
から大容量記録装置として優れた特徴と有してい
る。この光記録媒体材料としては、テルル（Te）
等のカルコゲン元素又はこれらの化合物が使用さ
れている特公昭47−26897号公報）。とくにテルル
−セレン系合金はよく使用されている（特公昭54
−41902号公報、特公昭57−7919号公報、特公昭
57−56058号公報）。 近年、記録装置を小型化するため、レーザ光源
としては半導体レーザが使用されてきている。半
導体レーザは発振波長が8000Å前後であるが、テ
ルル−セレン系合金はこの波長帯にも比較的よく
適合し、適度な反射率と適度な吸収率が得られる
｛フイジカ・ステイタス・ソリダイ、７、189、
1964（phys.stat.sol.７、189、1964）｝。 このテルル−セレン系合金を光記録層として用
いた光記録媒体は第２図に示すような構成になつ
ている。すなわち基板１に隣接してテルル−セレ
ン系合金よりなる記録層２１が設けられている。
記録用レーザ光は基板１を通して記録層２１に集
光照射され、ピツト２２が形成される。基板１と
してはポリカーボネート、ポリオレフイン、ポリ
メチルペンテル、アクリル、エポキシ樹脂等の合
成樹脂やガラスが使用され、基板１にはピツトが
同心円状あるいはスパイラル状に一定間隔で精度
よく記録されるように通常案内溝が設けられてい
る。 ［発明が解決しようとする問題点］ しかしながら前記したような従来の光記録媒体
において、記録層として用いられているテルル−
セレン系合金はその組成を制御することが容易で
はなく、そのため量産性に問題があつた。又、ピ
ツトをトラツク１周にわたつて均一に形成するこ
とは困難であるため、充分に良好な記録再生特性
は得られなかつた。 一方、本発明者らは、基板の上にセレン層、テ
ルル層、セレン層を順次積層して記録層とするこ
とにより、量産性および耐候性に優れ、かつ、ト
ラツク１周にわたつてピツトを均一に形成でき、
良好な記録再生特性を有する光記録媒体となるこ
とを見出し、すでに提案している。 本発明はこれをさらに改善したもので、量産性
および耐候性に優れ、かつ高感度で信号品質の良
好な光記録媒体を提供することを目的とする。 ［問題点を解決するための手段］ 本発明は基板と、レーザ光によつて一部が選択
的に除去されて情報を記録する前記基板上に形成
された記録層とからなる光記録媒体において、前
記記録層がセレン層、パラジウム層、テルル層、
パラジウム層、セレン層を順次基板上に積層した
ものであることを特徴とする光記録媒体である。 本発明においては第１図に示すように基板１上
にセレン層２、パラジウム層３、テルル層４、パ
ラジウム層５、セレン層６が順次積層されて記録
層を形成する。パラジウム層３とパルジウム層５
を形成することにより、記録により形成されるピ
ツトが大きく拡がらないようになる。 上下のセレン層の膜厚はともにそれぞれ５〜
100Åの範囲、テルル層の膜厚は100〜500Åの範
囲、上下のパラジウム層の膜厚はともにそれぞれ
0.5〜50Åの範囲が記録再生特性、耐候性の観点
から望ましい。なお、ここでいう0.5〜50Åのパ
ラジウム層というのは重量平均に相当する膜厚で
あり、実際には不連続膜となつている。 基板としてはポリカーポネート、ポリオレフイ
ン、ポリメチルペンテン、アクリル、エポキシ樹
脂等の合成樹脂やガラスなど通常使用されている
ものが用いられる。 本発明の光記録媒体は、基板上にセレン、パラ
ジウム、テルル、パラジウムおよびセレンを順に
真空蒸着させることによつて製造することができ
る。 ［作 用］ テルル層とセレン層の間にパラジウム層を介在
させることによつてピツトが大きく拡がらなくな
り、優れた光記録媒体を得ることができる。これ
はピツト形成による反射率変化の主要因であるテ
ルル層４の表面張力がパラジウム層５の形成によ
り変化することによるためと、テルル層４の有無
による表面エネルギーの差がパラジウム層３の形
成により変化することによつてピツトが拡がりに
くくなるためであると思われる。 ピツトが大きく拡がらないのでピツトをつめて
記録でき、高密度記録が可能となるとともに記録
パワー変動に対する余裕度も大きくなるので実用
的な光記録媒体となる。 ［実施例］ 以下本発明の実施例について説明する。 実施例 内径15mm、外径130mm、厚さ1.2mmのポリカーボ
ネート樹脂デイスク基板を真空蒸着装置内に入
れ、６×10-6Torr以下に排気した。蒸発源とし
ては、第１の抵抗加熱用ボートにテルル（Te）
を入れ、第２の抵抗加熱用ボートにセレン（Se）
を入れ、電子ビーム加熱用るつぼにパラジウム
（Pd）を入れた。まずSeを80Å厚蒸着し、次に
Pdを水晶振動子の周波数変化からの換算で１Å
厚蒸着し、次にTeを225Å厚蒸着し、次にPdを
１Å厚蒸着し、最後にSeを80Å厚蒸着した。こ
の光デイスクを95℃で１時間アニールしたのち、
波長8300Åにおける基板入射反射率を測定したと
ころ33％であつた。波長8300Åの半導体レーザ光
を基板を通して入射して1.5μmφ程度に絞り、媒
体線速度5.6m／sec、記録周波数3.77MHz、記録
パルス幅70nsecの条件で記録し、0.7mWで再生
した。記録パワー6.0mWにおいて、バンド幅30k
Hzのキヤリアーとノイズとの比（Ｃ／Ｎ）は
49dBと良好であつた。又、Ｃ／Ｎが45dB以上得
られる記録パワー領域は5.5mWから8.0mWと広
範囲であつた。比較のための80Å厚のSe、225Å
厚のTe、80Å厚のSeの光デイスクでは、記録パ
ワー5.0mWにおいてＣ／Ｎは48dBであり、Ｃ／
Ｎが45dB以上得られる記録パワー領域は5.0mW
から6.5mWと狭い範囲であつた。 次に、本実施例のデイスクを60℃、80％の高温
高湿度の環境に60時間保存した後、上記特性を調
べたが変化はなく、耐候性に優れた光記録媒体で
あることが確認された。 ［発明の効果］ 以上説明したように本発明の光記録媒体は量産
性および耐候性に優れているばかりでなく、高感
度で信号品質の良好なものである。[Claims] 1. An optical recording medium comprising a substrate and a recording layer formed on the substrate, a portion of which is selectively removed by laser light to record information, wherein the recording layer is made of selenium. 1. An optical recording medium comprising a substrate, in which a palladium layer, a tellurium layer, a palladium layer, and a selenium layer are sequentially laminated on a substrate. * Theory [Industrial Application Field] The present invention relates to an optical recording medium on which information can be recorded and reproduced using laser light. [Prior Art] Optical disk memories, which record and reproduce information on a medium using laser light, have an excellent feature as a large-capacity recording device because of their high recording density. The material for this optical recording medium is tellurium (Te).
(Japanese Patent Publication No. 47-26897) in which chalcogen elements such as or compounds thereof are used. In particular, tellurium-selenium alloys are often used (Special Public Interest Publication in 1972).
-41902 Publication, Special Publication No. 57-7919, Special Publication Sho
57-56058). In recent years, in order to downsize recording devices, semiconductor lasers have been used as laser light sources. Semiconductor lasers have an oscillation wavelength of around 8000 Å, and tellurium-selenium alloys are relatively well suited to this wavelength range, and can provide moderate reflectance and moderate absorption {Fijica Status Solidai, 7 , 189,
1964 (phys.stat.sol. 7 , 189, 1964)}. An optical recording medium using this tellurium-selenium alloy as an optical recording layer has a structure as shown in FIG. That is, a recording layer 21 made of a tellurium-selenium alloy is provided adjacent to the substrate 1.
The recording laser beam is focused and irradiated onto the recording layer 21 through the substrate 1, and pits 22 are formed. The substrate 1 is made of synthetic resin such as polycarbonate, polyolefin, polymethylpentyl, acrylic, or epoxy resin, or glass, and the substrate 1 is usually guided so that pits are recorded concentrically or spirally at regular intervals. A groove is provided. [Problems to be Solved by the Invention] However, in the conventional optical recording medium as described above, tellurium, which is used as a recording layer,
It is not easy to control the composition of selenium-based alloys, which poses problems in mass production. Further, since it is difficult to form pits uniformly over one circumference of the track, sufficiently good recording and reproducing characteristics cannot be obtained. On the other hand, the present inventors succeeded in laminating a selenium layer, a tellurium layer, and a selenium layer on a substrate to form a recording layer, thereby achieving excellent mass productivity and weather resistance, and making it possible to maintain pits over one round of the track. Can be formed uniformly,
It has been discovered that the method can be used as an optical recording medium with good recording and reproducing characteristics, and has already been proposed. The present invention is a further improvement on this, and aims to provide an optical recording medium that is excellent in mass production and weather resistance, has high sensitivity, and has good signal quality. [Means for Solving the Problems] The present invention provides an optical recording medium comprising a substrate and a recording layer formed on the substrate, a portion of which is selectively removed by laser light to record information. , the recording layer is a selenium layer, a palladium layer, a tellurium layer,
This optical recording medium is characterized in that a palladium layer and a selenium layer are sequentially laminated on a substrate. In the present invention, as shown in FIG. 1, a selenium layer 2, a palladium layer 3, a tellurium layer 4, a palladium layer 5, and a selenium layer 6 are sequentially laminated on a substrate 1 to form a recording layer. Palladium layer 3 and palladium layer 5
By forming this, the pits formed by recording are prevented from expanding significantly. Both the upper and lower selenium layers have a thickness of 5~
The thickness of the tellurium layer is in the range of 100 to 500 Å, and the thickness of both the upper and lower palladium layers is in the range of 100 Å.
A range of 0.5 to 50 Å is desirable from the viewpoint of recording/reproducing characteristics and weather resistance. Note that the palladium layer having a thickness of 0.5 to 50 Å here corresponds to a weight average film thickness, and is actually a discontinuous film. As the substrate, commonly used materials such as synthetic resins such as polycarbonate, polyolefin, polymethylpentene, acrylic, and epoxy resins, and glass are used. The optical recording medium of the present invention can be manufactured by sequentially vacuum-depositing selenium, palladium, tellurium, palladium, and selenium onto a substrate. [Function] By interposing the palladium layer between the tellurium layer and the selenium layer, pits are prevented from expanding significantly, and an excellent optical recording medium can be obtained. This is because the surface tension of the tellurium layer 4, which is the main factor in the change in reflectance due to pit formation, changes due to the formation of the palladium layer 5. This is because the difference in surface energy due to the presence or absence of the tellurium layer 4 is due to the formation of the palladium layer 3. This seems to be because the change makes it difficult for the pit to expand. Since the pits do not widen greatly, recording can be performed with the pits packed together, making it possible to perform high-density recording and increase the margin for fluctuations in recording power, making it a practical optical recording medium. [Examples] Examples of the present invention will be described below. Example A polycarbonate resin disk substrate with an inner diameter of 15 mm, an outer diameter of 130 mm, and a thickness of 1.2 mm was placed in a vacuum evaporation apparatus and evacuated to 6×10 -6 Torr or less. As an evaporation source, tellurium (Te) was used in the first resistance heating boat.
and put selenium (Se) into the second resistance heating boat.
and palladium (Pd) was placed in an electron beam heating crucible. First, Se is deposited to a thickness of 80 Å, and then
Pd is 1 Å converted from the frequency change of the crystal oscillator.
Then, Te was deposited to a thickness of 225 Å, then Pd was deposited to a thickness of 1 Å, and finally Se was deposited to a thickness of 80 Å. After annealing this optical disk at 95℃ for 1 hour,
The substrate incident reflectance at a wavelength of 8300 Å was measured and was 33%. Semiconductor laser light with a wavelength of 8300 Å was incident through the substrate and focused to approximately 1.5 μmφ, and recording was performed under the conditions of a medium linear velocity of 5.6 m/sec, a recording frequency of 3.77 MHz, and a recording pulse width of 70 nsec, and reproduction was performed at 0.7 mW. Bandwidth 30k at recording power 6.0mW
The carrier to noise ratio (C/N) in Hz is
It was good at 49dB. Further, the recording power range in which a C/N of 45 dB or more was obtained was wide from 5.5 mW to 8.0 mW. 80Å thick Se, 225Å for comparison
For an optical disk made of thick Te and 80 Å thick Se, the C/N is 48 dB at a recording power of 5.0 mW.
The recording power range where N is 45dB or more is 5.0mW.
It was within a narrow range of 6.5 mW. Next, after storing the disk of this example in a high temperature and high humidity environment of 60°C and 80% for 60 hours, the above characteristics were examined, but there were no changes, confirming that it is an optical recording medium with excellent weather resistance. It was done. [Effects of the Invention] As explained above, the optical recording medium of the present invention not only has excellent mass productivity and weather resistance, but also has high sensitivity and good signal quality.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61128464A JPS62282981A (en) | 1986-06-02 | 1986-06-02 | Optical recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61128464A JPS62282981A (en) | 1986-06-02 | 1986-06-02 | Optical recording medium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62282981A JPS62282981A (en) | 1987-12-08 |
| JPH051755B2 true JPH051755B2 (en) | 1993-01-08 |
Family
ID=14985364
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61128464A Granted JPS62282981A (en) | 1986-06-02 | 1986-06-02 | Optical recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62282981A (en) |
-
1986
- 1986-06-02 JP JP61128464A patent/JPS62282981A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62282981A (en) | 1987-12-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |