JPH0481955B2 - - Google Patents
Info
- Publication number
- JPH0481955B2 JPH0481955B2 JP61300791A JP30079186A JPH0481955B2 JP H0481955 B2 JPH0481955 B2 JP H0481955B2 JP 61300791 A JP61300791 A JP 61300791A JP 30079186 A JP30079186 A JP 30079186A JP H0481955 B2 JPH0481955 B2 JP H0481955B2
- Authority
- JP
- Japan
- Prior art keywords
- nitrogen
- recording
- film
- selenium
- tellurium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 64
- 229910052757 nitrogen Inorganic materials 0.000 claims description 27
- 230000003287 optical effect Effects 0.000 claims description 25
- 229910052714 tellurium Inorganic materials 0.000 claims description 23
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 20
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 17
- 229910052711 selenium Inorganic materials 0.000 claims description 17
- 239000011669 selenium Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- 239000002131 composite material Substances 0.000 claims description 5
- 238000005121 nitriding Methods 0.000 claims description 4
- 239000002344 surface layer Substances 0.000 claims description 3
- 230000035945 sensitivity Effects 0.000 description 13
- 239000010410 layer Substances 0.000 description 12
- 229910001873 dinitrogen Inorganic materials 0.000 description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910001370 Se alloy Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- -1 tellurium selenium alloy Chemical class 0.000 description 3
- KEFYKDIPBYQPHW-UHFFFAOYSA-N 2,4,6,8-tetraselena-1,3,5,7-tetrazatricyclo[3.3.0.03,7]octane Chemical compound [Se]1N2[Se]N3[Se]N2[Se]N13 KEFYKDIPBYQPHW-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920005668 polycarbonate resin Polymers 0.000 description 2
- 239000004431 polycarbonate resin Substances 0.000 description 2
- GGYFMLJDMAMTAB-UHFFFAOYSA-N selanylidenelead Chemical compound [Pb]=[Se] GGYFMLJDMAMTAB-UHFFFAOYSA-N 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910000978 Pb alloy Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910052798 chalcogen Inorganic materials 0.000 description 1
- 150000001787 chalcogens Chemical class 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000011116 polymethylpentene Substances 0.000 description 1
- 229920000306 polymethylpentene Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000012732 spatial analysis Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/254—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of protective topcoat layers
- G11B7/2548—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of protective topcoat layers consisting essentially of inorganic materials
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24316—Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24318—Non-metallic elements
- G11B2007/24322—Nitrogen
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
- G11B7/2531—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising glass
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
- G11B7/2533—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising resins
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
- Manufacturing Optical Record Carriers (AREA)
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明はレーザ光によつて情報を記録再生する
ことのできる光記録媒体とその製造方法に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an optical recording medium on which information can be recorded and reproduced using laser light, and a method for manufacturing the same.
(従来の技術)
レーザ光によつて情報を媒体に記録しかつ再生
する光デイスクメモリ、記録密度が高いことから
大容量記録装置として優れた特徴を有している。
この光記録媒体材料としては、最初にタンタルと
鉛が使用された(サイエンス(Science154、
1550、1966))。それ以来、種々の材料が使用され
ているがTe等のカルコゲン元素又はこれらの化
合物はよく使用されている(特公昭47−26897)。
とくにテルルセレン系合金はよく使用されている
(特公昭54−41902、特公昭57−7919、特公昭57−
56058)。近年、記録装置を小型化するため、レー
ザ光源としては半導体レーザが使用されてきてい
る。半導体レーザは発振波長が8000Å前後である
が、テルルセレン系合金はこの波長帯にも比較的
よく適合し、適度な反射率と、適度な吸収率が得
られる(フイジカ・ステイタス・ソリダイ
(phys.stat.sol.7、189、1964))。(Prior Art) Optical disk memories, which record and reproduce information on a medium using laser light, have excellent characteristics as large-capacity recording devices because of their high recording density.
Tantalum and lead were first used as materials for this optical recording medium (Science 154,
1550, 1966)). Since then, various materials have been used, but chalcogen elements such as Te or compounds thereof are often used (Japanese Patent Publication No. 47-26897).
In particular, tellurium selenium alloys are often used (Special Publications 1984-41902, 1984-7919, 1983-
56058). In recent years, in order to downsize recording devices, semiconductor lasers have been used as laser light sources. Semiconductor lasers have an oscillation wavelength of around 8000 Å, and tellurium selenium alloys are relatively well suited to this wavelength range, and can provide moderate reflectance and moderate absorption (Physica Status Solidi (phys.stat)). .sol.7, 189, 1964)).
(発明が解決しようとする問題点)
しかしながら、これらの媒体では、耐候性と感
度と信号品質のすべてを満足するものはなかつ
た。(Problems to be Solved by the Invention) However, none of these media satisfies all of the requirements of weather resistance, sensitivity, and signal quality.
本発明の目的は、耐候性がよく高感度で信号品
質が良好であり、記録パワーの余裕度が大きい光
記録媒体およびその製造方法を提供することにあ
る。 An object of the present invention is to provide an optical recording medium that has good weather resistance, high sensitivity, good signal quality, and a large recording power margin, and a method for manufacturing the same.
(問題を解決するための手段)
本発明の光記録媒体とその製造方法は、情報を
レーザ光によつて記録しかつ読み取る光記録媒体
とその製造方法であつて、基板上に形成されたテ
ルルとセレンと窒素を主成分とする複合膜からな
る記録膜を有し、上記テルルとセレンと窒素を主
成分とする複合膜は、テルルとセレンと窒素を主
成分とする膜と、この膜より窒素濃度の高い膜と
からなることを特徴とする光記録媒体であり、テ
ルルとセレンと窒素を主成分とする膜を形成する
工程と、この膜の表面層を強制窒化させる工程と
を有することを特徴とする光記録媒体の製造方法
である。(Means for solving the problem) An optical recording medium and a method for manufacturing the same according to the present invention are an optical recording medium for recording and reading information using a laser beam, and a method for manufacturing the same. The recording film is composed of a composite film whose main components are tellurium, selenium, and nitrogen. An optical recording medium characterized by comprising a film with a high nitrogen concentration, comprising a step of forming a film whose main components are tellurium, selenium, and nitrogen, and a step of forcibly nitriding the surface layer of this film. A method of manufacturing an optical recording medium is characterized in that:
(作用)
光記録媒体は図のような構成になつている。即
ち、基板1の上に記録層21が設けられている。
記録用レーザ光は基板1を通して記録層21に集
光照射され、ピツト22が形成される。基板1と
してはポリカーボネイト、ポリオレフイン、ポリ
メチルペンテン、アクリル、エポキシ樹脂等の合
成樹脂やガラスが使用される。基板には、ピツト
が同心円状あるいはスパイラル状に一定間隔で精
度よく記録されるように案内溝が設けられてい
る。レーザビーム径程度の幅の溝に光が入射する
と光は回折され、ビーム中心が溝からずれるにつ
れて回折光強度の空間分析が変化するので、これ
を検出してレーザビームを溝の中心に入射させる
ようにサーボ系が構成されている。溝の幅は通常
0.3〜1.3μmであり、溝の深さは使用するレーザ
波長の1/12から1/4の範囲に設定される。集光に
関しても同様にサーボ系が構成されている。情報
の読み出しは、記録のときよりも弱いパワーのレ
ーザ光をピツト上を通過するように照射すること
により、ピツトの有無に起因する反射率の変化を
検出して行う。記録層21としては種々の材料を
使用できる。その中でもテルルは比較的記録再生
特性が良好である。しかしながら高温高湿環境に
おける酸化劣化がはげしいので実用には供せなか
つた。又、感度的にもやや不足であつた。感度不
足を解決する1つとして、加熱時に窒素が遊離し
て高感度化するようにテルル膜に窒素を含ませる
ことが提案されている(特開昭57−58250)。本発
明者らはこの実施例を追試して光記録媒体を作製
し記録再生特性を評価したところ、本発明者らが
目的とする小型大容量記録装置の光源である半導
体レーザ波長(および8300Å)ではほとんど吸収
がないため感度不足であつた。又、窒素が遊離し
やすいため、高温高湿環境における保存性が充分
でなかつた。又、上記提案のように窒素ガス中で
スパツタリングして成膜するのではなく、アルゴ
ンと窒素との混合ガス中でスパツタリングして成
膜するということも提案されている(アプライ
ド・フイジクス・レターズ(Appl.Phys.Lett、
45、202、1984))。しかしながら、これでもまだ
充分な記録感度と充分な信号品質は得られなかつ
た。本発明者らはテルルセレン合金ターゲツトを
アルゴンと窒素との混合ガスでスパツタリングす
ることにより記録層がテルルとセレンと窒素とか
らなり、耐候性がよく高感度で信号品質の良好な
光記録媒体が得られることを見出し、既に提案し
ている(特願昭61−101368)。この記録層が耐候
性がよく高感度で信号品質が良好である理由は、
セレンを入れることで系全体の融点が低下したこ
とと窒化セレン,窒化テルルの爆発性とがあいあ
わさつて小穴の形成から表面張力による孔の拡張
が比較的低い温度で生じるようになつたために高
感度化したと思われ、テルルと窒化テルルとセレ
ンと窒化セレンとの相互作用が好都合に作用して
耐候性が向上し、信号品質が向上したものと思わ
れる。(Operation) The optical recording medium has a structure as shown in the figure. That is, the recording layer 21 is provided on the substrate 1.
The recording laser beam is focused and irradiated onto the recording layer 21 through the substrate 1, and pits 22 are formed. As the substrate 1, synthetic resins such as polycarbonate, polyolefin, polymethylpentene, acrylic, and epoxy resins, and glass are used. Guide grooves are provided on the substrate so that pits are recorded concentrically or spirally at regular intervals with high precision. When light enters a groove with a width similar to the diameter of the laser beam, the light is diffracted, and as the beam center shifts from the groove, the spatial analysis of the diffracted light intensity changes.This is detected and the laser beam is directed to the center of the groove. The servo system is configured as follows. The width of the groove is usually
The depth of the groove is 0.3 to 1.3 μm, and the depth of the groove is set in the range of 1/12 to 1/4 of the wavelength of the laser used. A servo system is similarly configured for condensing light. Information is read by irradiating a laser beam with a weaker power than during recording so as to pass over the pits, and detecting changes in reflectance caused by the presence or absence of pits. Various materials can be used for the recording layer 21. Among them, tellurium has relatively good recording and reproducing properties. However, it could not be put to practical use because of severe oxidative deterioration in high-temperature, high-humidity environments. Also, the sensitivity was somewhat insufficient. As one solution to the lack of sensitivity, it has been proposed to include nitrogen in the tellurium film so that nitrogen is liberated during heating and increases the sensitivity (Japanese Patent Application Laid-Open No. 58-58250). The inventors repeated this example to fabricate an optical recording medium and evaluated the recording and reproducing characteristics. Since there was almost no absorption, the sensitivity was insufficient. Furthermore, since nitrogen is easily liberated, the storage stability in a high temperature and high humidity environment was not sufficient. Furthermore, instead of forming a film by sputtering in nitrogen gas as proposed above, it has also been proposed to form a film by sputtering in a mixed gas of argon and nitrogen (Applied Physics Letters). Appl.Phys.Lett,
45, 202, 1984)). However, even with this, sufficient recording sensitivity and sufficient signal quality could not be obtained. By sputtering a tellurium selenium alloy target with a mixed gas of argon and nitrogen, the present inventors have obtained an optical recording medium with a recording layer composed of tellurium, selenium, and nitrogen, which has good weather resistance, high sensitivity, and good signal quality. We have already proposed this (Patent Application No. 101368, 1983). The reason why this recording layer has good weather resistance, high sensitivity, and good signal quality is as follows.
The addition of selenium lowered the melting point of the entire system, and the explosive properties of selenium nitride and tellurium nitride combined to cause the formation of small holes and expansion of pores due to surface tension to occur at relatively low temperatures. It seems that the sensitivity has been increased, and that the interaction between tellurium, tellurium nitride, selenium, and selenium nitride has a favorable effect, improving weather resistance and improving signal quality.
本発明はこれをさらに改善したものであり、記
録膜をテルルとセレンと窒素とを主成分とする膜
とその表面層を強制窒化させて窒素含有量の多い
複合膜とすることにより、耐候性がよく高感度で
信号品質が良好であり、しかも記録パワーの余裕
度が大きくなる。記録パワーの余裕度が大きくな
る理由はまだ充分に明確ではないが、記録膜の表
面に融点の高い層が出来たことにより、記録時に
ピツトがあまり大きく拡がらなくなるためと思わ
れる。 The present invention further improves this, and by forcibly nitriding the recording film of a film whose main components are tellurium, selenium, and nitrogen, and its surface layer to form a composite film with a high nitrogen content, it has improved weather resistance. It has high sensitivity, good signal quality, and has a large recording power margin. The reason why the margin of recording power increases is not yet fully clear, but it is thought that the formation of a layer with a high melting point on the surface of the recording film prevents pits from expanding as much during recording.
(実施例) 以下、本発明の実施例について説明する。(Example) Examples of the present invention will be described below.
100℃で2時間アニール処理した内径15mm、外
径130mm、厚さ1.2mmの案内溝(溝幅0.7μm、溝深
さ600Å)付きポリカーボネイト樹脂デイスク基
板上に、原子パーセントで80対20のテルルセレン
ターゲツトを窒素ガス分圧4%のアルゴンと窒素
との混合ガスを用いてマグネトロンスパツタする
ことにより、テルルとセレンと窒素とが原子数比
でおよそ77対19対4の膜を約250Å厚作製した。
しかる後、平行平板電極型プラズマリアクターに
窒素ガスを導入して放電させて窒素プラズマを生
成し、このプラズマにより窒素含有量が原子パー
セントで10%程度で20Å厚程度の窒素含有量の多
い層を表面に形成し、この複合膜を記録膜とする
光記録媒体を作製した。 A polycarbonate resin disc substrate with an inner diameter of 15 mm, an outer diameter of 130 mm, and a thickness of 1.2 mm (groove width 0.7 μm, groove depth 600 Å) annealed for 2 hours at 100°C is coated with 80:20 tellurium selenium in atomic percent. By magnetron sputtering the target using a mixed gas of argon and nitrogen with a nitrogen gas partial pressure of 4%, a film with a thickness of about 250 Å of tellurium, selenium, and nitrogen in an atomic ratio of approximately 77:19:4 was fabricated. did.
After that, nitrogen gas is introduced into a parallel plate electrode type plasma reactor and discharged to generate nitrogen plasma, and this plasma forms a nitrogen-rich layer with a nitrogen content of about 10% in atomic percent and a thickness of about 20 Å. An optical recording medium was fabricated using this composite film as a recording film.
この光デイスクの溝部の反射率を波長8300Åで
基板入射で測定したところおよそ29%であつた。
波長8300Åの半導体レーザ光を基板を通して入射
して記録膜上に1.6μmφ程度に絞り、媒体線速度
5.65m/sec、記録周波数3.77MHz、記録パルス幅
70nsec、記録パワー6.5mWの条件で溝部に記録
し、07mWの一定パワーで再生した。バンド幅
30kHzのキヤリアーとノイズとの比(C/N)は
51dBと良好な値が得られた。又、AC再生信号の
零レベルに対して固定値のスライスレベルを設け
て、1つ1つのピツトに対して正常に記録再生が
行なわれたか否かを判定する方式のビツト誤り率
測定方式で評価したところ、10-6台のビツト誤り
率が得られた。記録パワーを6.0mW、7.0mとし
ても同様にビツ誤り率は10-6台と良好であり、記
録パワーの余裕度の大きいことが確認された。 The reflectance of the grooves of this optical disk was measured at a wavelength of 8300 Å with the substrate incident on it, and found to be approximately 29%.
Semiconductor laser light with a wavelength of 8300 Å is incident through the substrate and focused onto the recording film to approximately 1.6 μmφ, and the medium linear velocity is
5.65m/sec, recording frequency 3.77MHz, recording pulse width
Recording was performed in the groove under conditions of 70 nsec and recording power of 6.5 mW, and reproduction was performed at a constant power of 0.7 mW. Bandwidth
The carrier to noise ratio (C/N) at 30kHz is
A good value of 51dB was obtained. In addition, evaluation was performed using a bit error rate measurement method that sets a fixed slice level for the zero level of the AC playback signal and determines whether or not recording and playback was performed normally for each pit. As a result, a bit error rate of 10 -6 was obtained. Even when the recording power was set to 6.0 mW and 7.0 m, the bit error rate was similarly good at 10 -6 , confirming that there was a large margin of recording power.
この光デイスクを80℃90%の高温高湿度の環境
に750時間保存した後も上記特性は実用上変化が
なく、耐候性に優れた光記録媒体であることが確
認された。テルルとセレンと窒素とを主成分とす
る層厚さは100Åから1000Åの範囲が記録再生特
性の観点で望ましく、とくに望ましいのは200Å
から400Åである。セレンの含有量は原子パーセ
ントで2パーセント以上40パーセント未満の範囲
が記録再生特性、耐候性、未記録ノイズの観点で
望ましく、とくに望ましいのは10パーセント以上
30パーセント以下である。窒素の含有量は原子パ
ーセントで2パーセント以上20パーセント未満が
記録再生特性、耐候性の観点で望ましく、とくに
望ましいのは2パーセント以上10パーセント以下
である。記録膜中の窒素元素の含有量は、スパツ
タリングターゲツト組成比は窒素ガス分圧に依存
するのは勿論であるが、スパツタ装置の大きさ
(スパツタ室の表面積等)やスパツタ時間等にも
依存するので、最適組成が得られる窒素ガス分圧
は一義的には決められず、各スパツタ装置ごとに
窒素ガス分圧を適宜設定することが必要である。
テルルセレンと窒素と主成分とする層には、鉛、
アンチモン、ヒ素、イオウ、スズ、ゲルマニウ
ム、タリウム、リン、カドミウム、インジウム、
ガリウム、亜鉛、ビスマス、アルミニウム、銅、
銀、マグネシウム、タンタル、金、パラジウム、
コバルトの群から選ばれた少なくとも1種の元素
を添加すると、ピツトの形状を良好に整える場合
がある。ただし、添加量は原子パーセントで20パ
ーセント未満が望ましい。 Even after this optical disk was stored for 750 hours in a high temperature and high humidity environment at 80°C and 90%, the above characteristics did not change in practical terms, confirming that it is an optical recording medium with excellent weather resistance. The thickness of the layer mainly composed of tellurium, selenium, and nitrogen is preferably in the range of 100 Å to 1000 Å from the viewpoint of recording and reproducing characteristics, and 200 Å is particularly desirable.
It is 400Å from The content of selenium is desirably in the range of 2% or more and less than 40% in terms of atomic percent from the viewpoint of recording/reproducing characteristics, weather resistance, and unrecorded noise, and it is particularly desirable to have a selenium content of 10% or more.
Less than 30%. The content of nitrogen is desirably 2% or more and less than 20% in terms of atomic percent from the viewpoint of recording and reproducing properties and weather resistance, and particularly preferably 2% or more and less than 10%. The content of nitrogen in the recording film depends not only on the sputtering target composition ratio and nitrogen gas partial pressure, but also on the size of the sputtering device (surface area of the sputtering chamber, etc.), sputtering time, etc. Therefore, the nitrogen gas partial pressure at which the optimum composition can be obtained cannot be determined uniquely, and it is necessary to appropriately set the nitrogen gas partial pressure for each sputtering device.
The layer mainly composed of tellurium selenium and nitrogen contains lead,
Antimony, arsenic, sulfur, tin, germanium, thallium, phosphorus, cadmium, indium,
Gallium, zinc, bismuth, aluminum, copper,
silver, magnesium, tantalum, gold, palladium,
Addition of at least one element selected from the group of cobalt may improve the shape of the pit. However, the amount added is preferably less than 20% in atomic percent.
この実施例について以下に説明する。 This example will be explained below.
100℃で2時間アニール処理した内径15mm、外
径130mm、厚さ1.2mmの案内溝付きポリカーボネイ
ト樹脂デイスク基板を、13.56MHzの高周波電源
を有するマグネトロンスパツタ装置内に装着して
排気した。2×10-6Torr以下に排気後、アルゴ
ンガスと窒素ガスを導入し1×10-2Torrとした。
このときの窒素ガス分圧は0.26%、窒素ガス流量
は0.30SCCMである。原子%で73対20対7のテル
ルセレン鉛合金の焼結体の8インチターゲツトを
この混合ガスで投入パワー120Wでデイスク基板
を回転させながらスパツタリングすることによ
り、テルルと窒素とセレンと鉛との原子数の比が
およそ71対2対20対7の膜を約220Å厚作製した。
しかる後、前記実施例と同様な処理により、窒素
含有量が原子%で6%で20Å厚程度の窒素含有量
の多い層を表面に形成し、しかる後、温度85℃相
対湿度90%の環境に12時間保存して、多結晶質の
膜からなる光記録媒体を製作した。 A polycarbonate resin disk substrate with a guide groove having an inner diameter of 15 mm, an outer diameter of 130 mm, and a thickness of 1.2 mm, which had been annealed at 100° C. for 2 hours, was placed in a magnetron sputtering device equipped with a 13.56 MHz high-frequency power source, and the air was evacuated. After evacuation to below 2×10 -6 Torr, argon gas and nitrogen gas were introduced to bring the pressure to 1×10 -2 Torr.
At this time, the nitrogen gas partial pressure was 0.26%, and the nitrogen gas flow rate was 0.30 SCCM. Atoms of tellurium, nitrogen, selenium, and lead were sputtered on an 8-inch target made of a sintered body of tellurium selenium lead alloy with a ratio of 73:20:7 at % by using this mixed gas at an input power of 120 W while rotating the disk substrate. A film with a thickness of approximately 220 Å with a number ratio of approximately 71:2:20:7 was fabricated.
Thereafter, a layer with a high nitrogen content of 6 atomic % and a thickness of about 20 Å was formed on the surface by the same treatment as in the above example, and then placed in an environment at a temperature of 85° C. and a relative humidity of 90%. After storage for 12 hours, an optical recording medium made of a polycrystalline film was fabricated.
この光デイスクの波長8300Åにおける基板入射
の反射率を測定したところ、約32%であつた。波
長8300Åの半導体レーザ光を基板を通して入射し
て記録層上で1.6μmφ程度に絞り、媒体線速度
5.65m/sec、記録周波数3.77MHz、記録パルス幅
70nsec、記録パワー6.0mWの条件で記録し、0.7
mWで再生した。バンド幅30kHzのキヤリアーと
ノイズとの比(C/N)は49dBと良好であつた。
この値は、記録再生装置を変更することにより生
ずる記録パワー変動に対しても実用上充分に安定
であつた。この光デイスクを85℃90%の高温高湿
度の環境に200時間保存した後、上記特性を調べ
たが変化はなく、耐候性に優れた光記録媒体であ
ることが確認された。この条件で鉛を含有させな
かつた記録膜においてはビツトエラーレイトに変
化はないものの膜表面には0.01〜0.1μm程度の突
起状のものが発生するが、鉛を含有させた記録膜
には発生しない。この抑止効果は、原子%で5以
下の鉛含有量では得られなかつた。テルルセレン
鉛ターゲツトを窒素ガスを導入しないでスパツタ
リングして記録膜を作製した場合には、記録感度
が安定せず、実用上不充分なものであつた。 When we measured the reflectance of this optical disk incident on the substrate at a wavelength of 8300 Å, it was approximately 32%. Semiconductor laser light with a wavelength of 8300 Å is incident through the substrate and focused on the recording layer to approximately 1.6 μmφ, and the medium linear velocity is
5.65m/sec, recording frequency 3.77MHz, recording pulse width
Recorded under the conditions of 70nsec and recording power 6.0mW, 0.7
Regeneration was performed at mW. The carrier-to-noise ratio (C/N) with a bandwidth of 30 kHz was good at 49 dB.
This value was sufficiently stable for practical use even against fluctuations in recording power caused by changing the recording/reproducing device. After storing this optical disk in a high temperature and high humidity environment at 85° C. and 90% for 200 hours, the above characteristics were examined, but there were no changes, confirming that the optical recording medium had excellent weather resistance. Under these conditions, the bit error rate does not change in the recording film that does not contain lead, but protrusions of about 0.01 to 0.1 μm occur on the film surface, but these do not occur in the recording film that contains lead. do not. This inhibitory effect could not be obtained with a lead content of 5 atomic % or less. When a recording film was prepared by sputtering a tellurium selenium lead target without introducing nitrogen gas, the recording sensitivity was unstable and was insufficient for practical use.
強制窒化は円筒型或いは平行平板型電極を有す
るプラズマリアクターにN2ガス等窒素を含有す
るガスを導入して放電することにより、制御性よ
く行なうことができる。強制窒化された膜の厚さ
は10Åから100Åの範囲が記録再生特性を劣化さ
せずに記録パワーの余裕度を大きくできるのでと
くに望ましい。 Forced nitriding can be performed with good controllability by introducing a nitrogen-containing gas such as N 2 gas into a plasma reactor having cylindrical or parallel plate electrodes and causing discharge. It is particularly desirable for the thickness of the forced nitrided film to be in the range of 10 Å to 100 Å, since this allows for a large margin of recording power without deteriorating the recording/reproducing characteristics.
(発明の効果)
上記実施例から明らかなように、本発明により
耐候性がよく高感度で信号品質が良好であり、し
かも記録パワーの余裕度が大きい光記録媒体とそ
の製造方法が得られる。(Effects of the Invention) As is clear from the above embodiments, the present invention provides an optical recording medium with good weather resistance, high sensitivity, good signal quality, and a large recording power margin, and a method for manufacturing the same.
図は光記録媒体の1例を示す断面概略図であ
る。図において、1は基板、21は記録層、22
はピツトを表す。
The figure is a schematic cross-sectional view showing an example of an optical recording medium. In the figure, 1 is a substrate, 21 is a recording layer, 22
represents pit.
Claims (1)
光記録媒体において、基板上に形成されたテルル
とセレンと窒素を主成分とする複合膜からなる記
録膜を有し、上記テルルとセレンと窒素を主成分
とする複合膜は、テルルとセレンと窒素を主成分
とする第1の膜と、第1の膜より窒素濃度の高い
第2の膜とからなることを特徴とする光記録媒
体。 2 情報をレーザ光によつて記録しかつ読み取る
光記録媒体の製造方法において、テルルとセレン
と窒素を主成分とする膜を形成する工程と、この
膜の表面層を強制窒化させる工程とを有すること
を特徴とする光記録媒体の製造方法。[Scope of Claims] 1. An optical recording medium for recording and reading information using a laser beam, comprising a recording film formed on a substrate and consisting of a composite film mainly composed of tellurium, selenium, and nitrogen, and comprising the above-mentioned A composite film containing tellurium, selenium, and nitrogen as main components is characterized by comprising a first film containing tellurium, selenium, and nitrogen as main components, and a second film having a higher nitrogen concentration than the first film. optical recording medium. 2. A method for manufacturing an optical recording medium in which information is recorded and read by laser light, comprising the steps of forming a film containing tellurium, selenium, and nitrogen as main components, and forcibly nitriding the surface layer of this film. A method for manufacturing an optical recording medium, characterized in that:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61300791A JPS63151486A (en) | 1986-12-16 | 1986-12-16 | Optical recording medium and its production |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61300791A JPS63151486A (en) | 1986-12-16 | 1986-12-16 | Optical recording medium and its production |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63151486A JPS63151486A (en) | 1988-06-24 |
JPH0481955B2 true JPH0481955B2 (en) | 1992-12-25 |
Family
ID=17889137
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61300791A Granted JPS63151486A (en) | 1986-12-16 | 1986-12-16 | Optical recording medium and its production |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63151486A (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6821707B2 (en) | 1996-03-11 | 2004-11-23 | Matsushita Electric Industrial Co., Ltd. | Optical information recording medium, producing method thereof and method of recording/erasing/reproducing information |
DE69729990T2 (en) * | 1996-03-11 | 2004-12-09 | Matsushita Electric Industrial Co., Ltd., Kadoma | OPTICAL DATA RECORDING MEDIUM, METHOD FOR PRODUCING THE SAME AND METHOD FOR PLAYING BACK / DELETING A RECORD |
JP3570169B2 (en) * | 1997-08-22 | 2004-09-29 | 松下電器産業株式会社 | Optical information recording medium |
JPH11134720A (en) | 1997-08-28 | 1999-05-21 | Matsushita Electric Ind Co Ltd | Optical information recording medium and its recording/ reproducing method |
US6343062B1 (en) | 1997-09-26 | 2002-01-29 | Matsushita Electric Industrial Co., Ltd | Optical disk device and optical disk for recording and reproducing high-density signals |
TW448443B (en) | 1998-08-05 | 2001-08-01 | Matsushita Electric Ind Co Ltd | Optical information storage media and production method as well as the storage reproducing method and device |
-
1986
- 1986-12-16 JP JP61300791A patent/JPS63151486A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS63151486A (en) | 1988-06-24 |
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