JPH0379776B2 - - Google Patents

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Publication number
JPH0379776B2
JPH0379776B2 JP1238686A JP1238686A JPH0379776B2 JP H0379776 B2 JPH0379776 B2 JP H0379776B2 JP 1238686 A JP1238686 A JP 1238686A JP 1238686 A JP1238686 A JP 1238686A JP H0379776 B2 JPH0379776 B2 JP H0379776B2
Authority
JP
Japan
Prior art keywords
layer
recording medium
optical recording
recording
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1238686A
Other languages
Japanese (ja)
Other versions
JPS62170048A (en
Inventor
Masaki Ito
Akio Morimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP1238686A priority Critical patent/JPS62170048A/en
Publication of JPS62170048A publication Critical patent/JPS62170048A/en
Publication of JPH0379776B2 publication Critical patent/JPH0379776B2/ja
Granted legal-status Critical Current

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  • Optical Record Carriers And Manufacture Thereof (AREA)
  • Manufacturing Optical Record Carriers (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)

Description

【発明の詳細な説明】[Detailed description of the invention]

(産業上の利用分野) 本発明はレーザ光によつて情報を記録再生する
ことのできる光記録媒体の製造方法に関するもの
である。 (従来の技術) レーザ光によつて情報を媒体に記録し、かつ再
生する光デイスクメモリは、記録密度が高いこと
から大容量記録装置として優れた特徴を有してい
る。この光記録媒体材料としては、Te等のカル
コゲン元素、又はこれらの化合物が使用されてい
る(特公昭47−26897)。とくにテルルセレン系合
金はよく使用されている(特開昭47−4832、特開
昭50−42849、特開昭50−43947)。近年、記録装
置を小型化するため、レーザ光源としては半導体
レーザが使用されてきている。半導体レーザは発
振波長が8000Å前後であるが、テルルセレン系合
金はこの波長帯にも比較的よく適合し、適度な反
射率と適度な吸収率が得られる(フイジカ・ステ
イタス・ソリダイ(phys.stat.sol.7,189,
1964))。 (発明が解決しようとする問題点) しかしながら、テルルセレン合金の組成を制御
することは容易ではなく。量産性に問題があつ
た。 本発明の目的は、量産性がよく、かつ信号品質
が良好で耐候性がよい光記録媒体の製造方法を提
供することにある。 (問題を解決するための手段) 本発明の光記録媒体の製造方法は基板上に形成
した記録層の一部をレーザ光により選択的に除去
して情報を記録する光記録媒体の製造方法であつ
て、前記基板上にセレン層を形成し、その上にテ
ルル層を形成し、その上にセレン層を形成し、し
かる後アニールすること特徴とする。 (作用) 光記録媒体は従来第2図のような構成になつて
いた。即ち基板1の上に記録層5が形成されてい
る。記録用レーザ光は基板1を通して記録層5に
集光照射され、ピツト6が形成される。基板1と
してはポリカーボネート、ポリメチルペンテン、
アクリル樹脂等の合成樹脂やガラスが使用され
る。記録層5としては種々の材料を使用できるが
耐候性を考慮するとテルルセレン合金が望まし
い。しかしながら、テルルセレン合金膜の組成を
制御するのは容易でないため、量産性に問題があ
つた。 本発明者らは、第1図に示すが如くセレン層
2、テルル層3、セレン層4と個別に各層を形成
し、しかる後にアニールするという処理をほどこ
すことにより、テルルセレン合金記録層の光記録
媒体以上の良好な記録再生特性を有し、テルルセ
レン合金記録層の光記録媒体と同程度の良好な耐
候性を有する光記録媒体となることを見出し、本
発明に至つたものである。 実施例 1 以下本発明の実施例について説明する。 内径15mm、外径130mm、厚さ1.2mmの案内溝付き
ポリカーボネート樹脂デイスク基板を真空蒸着装
置内に入れ、2×10-5Torr以下に排気した。蒸
発源としては、第1の抵抗加熱用ボート(モリブ
デン製)にTeを入れ、第2の抵抗加熱用ボート
(モリブデン製)にSeを入れた。まずSeを25Å厚
蒸着し、次にTeを225Å厚蒸着し、最後にSeを25
Å厚蒸着した。この時点で波長8300Åにおけるフ
ラツト部の基板入射反射率を測定したところ31%
であり、吸収率は44%であつた。次にこの光デイ
スクを80℃の窒素雰囲気中で1時間アニールした
のち、再度基板入射反射率を測定したところ34%
となり、吸収率は44%であつた。波長8300Åの
AlGaAs半導体レーザを用いて、媒体線速度5.6
m/sec、記録周波数0.625MHz(デユーテイ50
%)の条件で3.5mWで記録し、0.7mWで再生し
たところ、バンド幅30kHzの信号対雑音比(C/
N)は56dB、第2高周波対信号比(2ndH/C)
は―33dBと良好な品質の信号が得られた。比較
のための基板とテルル層との間のSe層を設けな
いデイスクでは、アニール後の光学特性は同じ値
であつたが、記録再生特性が大きく異なつた。
2ndH/Cが最小となる記録パワーは4.0mWとな
り、そのときの2ndH/Cは−31dBであるが、
C/Nは38dBと低下した。これは記録後のノイ
ズが大幅に増大したためである。次に、本実施例
の光記録媒体を70℃80%の高温高湿度の環境に
120時間保存した後、上記特性を調べたが変化は
なく、耐候性に優れた光記録媒体であることが確
認された。比較のためのテルル層のみのデイスク
や基板の上にセレン層を設けその上にテルル層を
設けたデイスクでは、テルルの酸化により良好な
記録再生はできなかつた。又、比較のためにアニ
ールしないデイスクでは、高温高湿試験によつて
光学特性及び記録再生特性が変化し、問題であつ
た。 本実施例の光記録媒体作製は単一元素の蒸着を
3回行なうだけであるため、化合物を作製すると
きにつきまとう膜組成の変動がない。したがつ
て、媒体特性変動の要因としては膜厚制御だけで
ある。蒸着装置の膜厚変動は、1つのラン内では
標準偏差の3倍の値1%以下、ラン間にわたつて
も標準偏差の3倍の値3%以下である。この程度
の膜厚変動では、本実施例の光記録媒体の記録再
生特性、耐候性に及ぼす影響はまつたくなく、量
産が可能であつた。又、本実施例ではアニール条
件を窒素中80℃1時間としたが、空気雰囲気中で
もほとんど同じ効果が得られた。又、アニール時
間を24時間まで変化させてみたがやはり同じ効果
であつた。又、90℃でもほとんど同じ効果であつ
た。ただし、アニール温度を70℃、60℃と下げる
場合には、アニール温度は1時間以上であること
が望ましい。 実施例 2 以下に示す表のような光記録媒体を作製し、実
施例1と同様にして記録再生を行なつた。アニー
ル条件はすべて80℃1時間である。すべての試料
で、C/Nが54dB以上、2ndH/Cが―26dB以
下が得られ、70℃80%120時間の高温高湿試験の
後でもその特性は変化しなかつた。Te層の厚さ
が厚い方が2ndH/Cが最小となる記録パワーは
やや増大するがそれでも5mW以下と低パワーで
記録できた。 なお、上記実施例ではセレン層の厚さを上下と
も同じ値としたが、異なる厚さにすることも可能
である。ただし、その厚さは5〜60Åの範囲が高
耐候性の点で望ましい。
(Industrial Application Field) The present invention relates to a method of manufacturing an optical recording medium that can record and reproduce information using laser light. (Prior Art) Optical disk memories, which record and reproduce information on a medium using laser light, have excellent characteristics as large-capacity recording devices because of their high recording density. As materials for this optical recording medium, chalcogen elements such as Te or compounds thereof are used (Japanese Patent Publication No. 47-26897). In particular, tellurium selenium alloys are often used (Japanese Patent Application Laid-Open No. 47-4832, JP-A No. 50-42849, JP-A No. 50-43947). In recent years, in order to downsize recording devices, semiconductor lasers have been used as laser light sources. Semiconductor lasers have an oscillation wavelength of around 8000 Å, and tellurium selenium alloys are relatively well suited to this wavelength range, and can provide moderate reflectance and moderate absorption (phys.stat. sol.7, 189,
1964)). (Problems to be Solved by the Invention) However, it is not easy to control the composition of tellurium selenium alloys. There was a problem with mass production. An object of the present invention is to provide a method for manufacturing an optical recording medium that is easy to mass-produce, has good signal quality, and has good weather resistance. (Means for solving the problem) The method for manufacturing an optical recording medium of the present invention is a method for manufacturing an optical recording medium in which information is recorded by selectively removing a part of a recording layer formed on a substrate using a laser beam. The method is characterized in that a selenium layer is formed on the substrate, a tellurium layer is formed thereon, a selenium layer is formed thereon, and then annealing is performed. (Function) Optical recording media have conventionally had a configuration as shown in FIG. That is, a recording layer 5 is formed on the substrate 1. The recording laser beam is focused and irradiated onto the recording layer 5 through the substrate 1, and pits 6 are formed. As the substrate 1, polycarbonate, polymethylpentene,
Synthetic resins such as acrylic resins and glass are used. Although various materials can be used for the recording layer 5, a tellurium selenium alloy is preferable in view of weather resistance. However, since it is not easy to control the composition of the tellurium selenium alloy film, there has been a problem in mass production. The present inventors formed a selenium layer 2, a tellurium layer 3, and a selenium layer 4 individually as shown in FIG. The inventors have discovered that an optical recording medium can be obtained which has better recording and reproducing characteristics than a recording medium and has weather resistance as good as that of an optical recording medium having a tellurium selenium alloy recording layer, leading to the present invention. Example 1 An example of the present invention will be described below. A polycarbonate resin disk substrate with a guide groove having an inner diameter of 15 mm, an outer diameter of 130 mm, and a thickness of 1.2 mm was placed in a vacuum evaporation apparatus, and the atmosphere was evacuated to 2×10 -5 Torr or less. As evaporation sources, Te was placed in the first resistance heating boat (made of molybdenum), and Se was placed in the second resistance heating boat (made of molybdenum). First, Se is deposited to a thickness of 25 Å, then Te is deposited to a thickness of 225 Å, and finally Se is deposited to a thickness of 25 Å.
The film was deposited to a thickness of Å. At this point, the substrate incident reflectance of the flat section at a wavelength of 8300 Å was measured and was 31%.
The absorption rate was 44%. Next, after annealing this optical disk in a nitrogen atmosphere at 80°C for 1 hour, the substrate incidence reflectance was measured again, and it was found to be 34%.
The absorption rate was 44%. Wavelength 8300Å
Using AlGaAs semiconductor laser, medium linear velocity 5.6
m/sec, recording frequency 0.625MHz (duty 50
When recording at 3.5 mW and playing back at 0.7 mW under conditions of 30kHz signal-to-noise ratio (C/
N) is 56dB, 2nd high frequency to signal ratio (2ndH/C)
A signal of good quality was obtained at -33dB. For comparison, a disk in which no Se layer was provided between the substrate and the tellurium layer had the same optical properties after annealing, but the recording and reproducing properties were significantly different.
The recording power at which 2ndH/C is minimum is 4.0mW, and 2ndH/C at that time is -31dB.
The C/N decreased to 38dB. This is because the noise after recording has increased significantly. Next, the optical recording medium of this example was placed in a high temperature and high humidity environment of 70°C and 80%.
After storage for 120 hours, the above characteristics were examined and there were no changes, confirming that the optical recording medium had excellent weather resistance. For comparison, disks with only a tellurium layer and disks with a selenium layer on a substrate and a tellurium layer thereon were unable to perform good recording and reproduction due to tellurium oxidation. Furthermore, for comparison, a disk that was not annealed had a problem in that the optical properties and recording/reproducing properties changed due to the high temperature and high humidity test. In the production of the optical recording medium of this example, a single element is deposited only three times, so there is no variation in film composition that is associated with the production of compounds. Therefore, film thickness control is the only factor that causes variations in medium characteristics. The film thickness variation of the vapor deposition apparatus is 1% or less, which is three times the standard deviation, within one run, and is not more than 3%, which is three times the standard deviation, between runs. This level of film thickness variation had no significant effect on the recording/reproducing characteristics and weather resistance of the optical recording medium of this example, and mass production was possible. Further, in this example, the annealing condition was set at 80° C. for 1 hour in nitrogen, but almost the same effect was obtained even in air atmosphere. I also tried varying the annealing time up to 24 hours, but the same effect was still obtained. Moreover, almost the same effect was obtained at 90°C. However, when the annealing temperature is lowered to 70°C or 60°C, it is desirable that the annealing temperature is 1 hour or more. Example 2 Optical recording media as shown in the table below were prepared and recorded and reproduced in the same manner as in Example 1. All annealing conditions were 80°C for 1 hour. All samples had a C/N of 54 dB or more and a 2ndH/C of -26 dB or less, and the characteristics did not change even after a high temperature and high humidity test at 70°C and 80% for 120 hours. Although the recording power at which 2ndH/C becomes the minimum increases slightly when the Te layer is thicker, recording was still possible at a low power of 5 mW or less. In the above embodiment, the thickness of the selenium layer is the same on both the upper and lower sides, but it is also possible to have different thicknesses. However, the thickness is preferably in the range of 5 to 60 Å from the viewpoint of high weather resistance.

【表】【table】

【表】【table】

【表】 (発明の効果) 上記実施例から明らかなように、本発明により
信号品質が良好で耐候性がよい光記録媒体を量産
性よく製造することができる。
[Table] (Effects of the Invention) As is clear from the above examples, the present invention makes it possible to mass-produce optical recording media with good signal quality and good weather resistance.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は光記録媒体の断面概略図、第2図は従
来の光記録媒体の断面概略図である。 図において、1基板、2,4はセレン層、3は
テルル層、5は記録層、6はピツトを示す。
FIG. 1 is a schematic cross-sectional view of an optical recording medium, and FIG. 2 is a schematic cross-sectional view of a conventional optical recording medium. In the figure, 1 is a substrate, 2 and 4 are selenium layers, 3 is a tellurium layer, 5 is a recording layer, and 6 is a pit.

Claims (1)

【特許請求の範囲】[Claims] 1 基板上に形成した記録層の一部をレーザ光に
より選択的に除去して情報を記録する光記録媒体
の製造方法において、前記基板上にセレン層を形
成し、その上にテルル層を形成し、その上にさら
にセレン層を形成し、しかる後アニールすること
を特徴とする光記録媒体の製造方法。
1. A method for manufacturing an optical recording medium in which information is recorded by selectively removing a part of a recording layer formed on a substrate with a laser beam, in which a selenium layer is formed on the substrate, and a tellurium layer is formed on the selenium layer. A method for producing an optical recording medium, which further comprises forming a selenium layer thereon, and then annealing the selenium layer.
JP1238686A 1986-01-22 1986-01-22 Production of optical recording medium Granted JPS62170048A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1238686A JPS62170048A (en) 1986-01-22 1986-01-22 Production of optical recording medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1238686A JPS62170048A (en) 1986-01-22 1986-01-22 Production of optical recording medium

Publications (2)

Publication Number Publication Date
JPS62170048A JPS62170048A (en) 1987-07-27
JPH0379776B2 true JPH0379776B2 (en) 1991-12-19

Family

ID=11803827

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1238686A Granted JPS62170048A (en) 1986-01-22 1986-01-22 Production of optical recording medium

Country Status (1)

Country Link
JP (1) JPS62170048A (en)

Also Published As

Publication number Publication date
JPS62170048A (en) 1987-07-27

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