JPH05175364A - Semiconductor device - Google Patents

Abstract

PURPOSE:To reduce the inner stress, but obtain the excellent properties of thermal stress when mounted by combining a special epoxy resin and phenolaralkyl resin, and further by blending in a specific ratio an inorganic filler having a specific particle size distribution. CONSTITUTION:A semiconductor element is sealed by an epoxy resin compound containing an epoxy resin represented by the formula I (R1 to R4: 1-4C alkyl groups), a phenolaralkyl resin represent by the formula II (n: 0 or a positive integer), and an inorganic filler. In this case, the content of the inorganic filler is set at 80 to 95weight% of the epoxy resin compound, and yet an inorganic filler of Waddell's spheroidcity 0.7 to 1.0 is contained in 80weight% or more. The entire particle size composition is set as follows: the particle diameter less than 1mum, less than 3weight%; 1 to 6mum, 10 to 22%; 7 to 30mum, 10 to 24%; 31 to 60mum, 20 to 40%; 61 to 90mum, 20 to 40%; and 91 or more, less than 10%. In this way, the generation of the package cracks can be suppressed.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION This invention has a low internal stress,
The present invention relates to a semiconductor device having excellent thermal shock resistance, and having excellent package crack resistance and moisture resistance reliability that have low thermal stress when mounted on a substrate.

In recent years, semiconductor devices such as ICs and LSIs have tended to become larger in size with higher integration. in addition,
The plastic package for protecting the semiconductor element from the external environment has been thinned by adopting the surface mounting form typified by the quad flat package (QFP) and the small outline package (SOP) due to the high packing density. Is progressing. Then, due to the increase in size of the semiconductor element, problems such as damage to the element due to internal stress generated between the element and the encapsulating resin composition, package cracking, etc. occur, and a surface mounting form is adopted. Therefore, the water contained in the resin composition for encapsulation causes vaporization and explosion due to the heat during mounting, which causes a package crack, and there is a problem that the moisture resistance is deteriorated thereafter. Is required to be resolved.

[0003]

As a method for reducing the above internal stress, the content ratio of the inorganic filler contained in the encapsulating resin composition has been conventionally increased, and the thermal expansion coefficient of the encapsulating resin can be adjusted to A method of approaching this is used, or a method of lowering the elastic modulus by mixing silicone or rubber into the sealing resin composition or by preliminarily reacting it. However, in the method of increasing the content ratio of the above-mentioned inorganic filler, the viscosity of the entire composition increases with an increase in the content ratio, and excessive increase significantly impairs moldability. It is used in the range (hereinafter abbreviated as "%"). With this, sufficient low stress cannot be obtained. Further, in the method for reducing the elastic modulus of the encapsulating resin by mixing the above silicone or rubber, the moisture contained in the encapsulating resin composition is diffused faster, and as a result, package resistance during mounting is improved. There is a problem that the cracking property is deteriorated.

Further, as a method for improving the package crack resistance at the time of mounting, a method of using a low hygroscopic material and incorporating it into a sealing resin composition is used. However, since the low hygroscopic material has a low glass transition temperature, when used in a high temperature atmosphere, the amount of deformation of the obtained sealing resin is large.

The present invention has been made in view of the above circumstances, and an object thereof is to provide a semiconductor device having low internal stress and excellent thermal stress during mounting.

[0006]

In order to achieve the above object, the semiconductor device of the present invention has a semiconductor element sealed with an epoxy resin composition containing the following components (A) to (C). In the semiconductor device, the content of the inorganic filler as the component (C) is 80 to 9 in the epoxy resin composition.
The inorganic filler as the component (C) is set to 5% by weight, and contains 80% by weight or more of a spherical inorganic filler having a sphericity of 0.7 to 1.0 in terms of Wadell's sphericity. The granularity configuration of is set to the following (a) to (f). (A) An epoxy resin represented by the following general formula (1).

[Chemical 5] (B) A phenol aralkyl resin represented by the following general formula (2).

[Chemical 6] (C) Inorganic filler. (A) Less than 3% of particles having a particle size of less than 1 μm. (B) 10 to 22 having a particle size of 1 μm or more and 6 μm or less
%. (C) 10 to 24 having a particle size of 7 μm or more and 30 μm or less
%. (D) 20 to 4 having a particle size of 31 μm or more and 60 μm or less
0%. (E) 20 to 4 having a particle size of 61 μm or more and 90 μm or less
0%. (F) Less than 10% of particles having a particle size of 91 μm or more.

[0007]

The present inventors have carried out a series of studies in order to obtain a sealing resin that has low stress and is excellent in thermal stress during mounting. As a result, by combining the above-mentioned special epoxy resin and phenol aralkyl resin, and further adding an inorganic filler having a specific particle size distribution in a specific ratio in addition to this combination, the internal stress is reduced, and excellent mounting The inventors have reached the present invention by finding that thermal stress can be obtained.

Next, the present invention will be described in detail.

The epoxy resin composition used in the present invention comprises a special epoxy resin (component A), a phenol aralkyl resin (component B), and an inorganic filler containing a specific proportion of an inorganic filler having a specific particle size distribution. (Component C), which is usually obtained in the form of powder or a tablet formed by compressing it.

The above-mentioned special epoxy resin (component A) is a biphenyl type epoxy resin and has the following general formula (1):
It is represented by.

[0011]

[Chemical 7] [In the above formula (1), R _{1 to} R ₄ are alkyl groups having 1 to ₄ carbon atoms. ]

By adding a lower alkyl group to the phenyl ring having a glycidyl group, water repellency can be obtained. The epoxy resin component may be composed of only the above-mentioned special epoxy resin, or may be used in combination with other normally used epoxy resins.
In the former case, all of the component A is composed only of the special epoxy resin represented by the general formula (1), and in the latter case, a part of the component A is represented by the general formula (1). It will be composed of a special epoxy resin. As the above-mentioned epoxy resin which is usually used, cresol novolak type,
Examples include various epoxy resins such as phenol novolak type, novolak bis A type, and bisphenol A type. As the novolak type epoxy resin, those having an epoxy equivalent of 150 to 250 and a softening point of 50 to 130 ° C. are usually used, and as the cresol novolak type epoxy resin,
Epoxy equivalents of 180 to 210 and softening points of 60 to 110 ° C are generally used. When both are used in this way, it is preferable to set the epoxy resin represented by the general formula (1) to 20% or more, and particularly preferably 50% or more of the whole epoxy resin component.

The above-mentioned phenol aralkyl resin (component B)
Is represented by the following general formula (2), and acts as a curing agent for the epoxy resin component.

[0014]

[Chemical 8] [In the above formula (2), m is 0 or a positive integer. ]

This phenol aralkyl resin (component B)
Can be obtained, for example, by reacting aralkylphenol with phenol using a Friedel-Crafts catalyst. In general, a condensed heavy compound of α, α'-dimethoxy-p-xylene and a phenol monomer is known. The phenol aralkyl resin (component B) has a softening point of 70 to 110 ° C. and a hydroxyl equivalent of 150 to 220.
It is preferable to use those having Further, the phenol aralkyl resin may itself constitute the curing agent component, or may be used in combination with any other commonly used phenol resin. In the former case, all of the curing agent components are composed of the above-mentioned phenol aralkyl resin, and in the latter case, some of the curing agent components are composed of the above-mentioned phenol aralkyl resin. Examples of the usually used phenol resin include phenol novolak and cresol novolak. These novolak resins have a softening point of 50 to 110 ° C. and a hydroxyl equivalent of 70 to
It is preferable to use the one of 150. When the above-mentioned phenol aralkyl resin is used in combination with such a normal phenol resin, it is preferable to set the above-mentioned phenol aralkyl resin in a proportion of 50% or more, and particularly preferably 70% or more of the whole curing agent component. is there. And the compounding ratio of the above-mentioned phenol aralkyl resin (including ordinary phenol resin) is such that the above-mentioned special epoxy resin (component A)
It is preferable that the hydroxyl group in the phenol aralkyl resin is 0.7 to 1.3 equivalents per 1 equivalent of the epoxy group therein. 0.9-1.1 is more suitable.
It is equivalent.

Examples of the above-mentioned inorganic filler (component C) include aluminum oxide, beryllium oxide, silicon carbide and silicon nitride, as well as crystalline and fusible fillers. And 80% or more of the whole inorganic filler has a sphericity of 0.7 to 1.0 in terms of Wadell's sphericity, and the whole inorganic filler needs to be set to the following particle size constitution. .. 0.7 in the Wadell's sphericity
Having a sphericity of 1.0 means that the sphericity of a particle is 0.7 (the diameter of a circle equal to the projected area of the particle) / (the diameter of the smallest circle circumscribing the projected image of the particle). It has a value of 1.0. That is, in the inorganic filler, the epoxy resin composition has excellent fluidity when the Wadell's sphericity and particle size composition are within predetermined ranges. This is because the fluidity is impaired outside the range of the particle size constitution shown below.

(A) Less than 3% of particles having a particle size of less than 1 μm. (B) 10 to 22 having a particle size of 1 μm or more and 6 μm or less
%. (C) 10 to 24 having a particle size of 7 μm or more and 30 μm or less
%. (D) 20 to 4 having a particle size of 31 μm or more and 60 μm or less
0%. (E) 20 to 4 having a particle size of 61 μm or more and 90 μm or less
0%. (F) Less than 10% of particles having a particle size of 91 μm or more.

The content of the inorganic filler having the above characteristics must be set in the range of 80 to 95% of the total epoxy resin composition. That is, if the content is less than 80%, the thermal shock resistance and thermal stress resistance will be impaired, and conversely, if it exceeds 95%, the fluidity will decrease.

In the epoxy resin composition used in the present invention, a curing accelerator, a flame retardant, a coupling agent, wax, etc. may be used, if necessary, in addition to the components A to C.

Examples of the curing accelerator include amine-based, phosphorus-based, boron-based and phosphorus-boron-based curing accelerators, which may be used alone or in combination.

As the flame retardant, compounds such as novolak type brominated epoxy or bis A type epoxy, antimony trioxide and antimony pentoxide may be used alone or in combination as appropriate.

As the coupling agent, methoxy or ethoxysilane such as glycidyl ether type, amine type, thiocyan type, urea type, etc. is appropriately used alone or in combination. As a method of using the inorganic filler, a dry blending method, a preheating reaction method, or a premixing method with respect to the organic component raw material can be appropriately selected.

Examples of the wax include compounds such as higher fatty acids, higher fatty acid esters, and higher fatty acid calcium, which may be used alone or in combination.

The epoxy resin composition used in the present invention is compounded with a rubber component such as silicone oil and silicone rubber, synthetic rubber, etc. in addition to the above-mentioned additives to reduce stress, and a moisture resistance reliability test is conducted. In order to improve the reliability of the above, an ion trapping agent represented by hydrotalcite or the like may be blended.

The epoxy resin composition used in the present invention can be manufactured, for example, as follows. That is, first, the above-mentioned special epoxy resin, phenol aralkyl resin, inorganic filler and other additives as necessary are appropriately mixed and premixed, and then kneaded in a kneading machine such as a mixing roll machine in a heated state and melt-mixed. To do. Then, it can be manufactured by a series of steps in which it is cooled to room temperature, pulverized by a known means, and tableted if necessary.

[0026]

The semiconductor device thus obtained is
An epoxy resin composition containing a special epoxy resin (component A) and a phenol aralkyl resin (component B), and further containing a specific proportion of an inorganic filler (component C) having a specific particle size distribution in addition to this combination Therefore, it is obtained by resin-sealing a semiconductor element, which suppresses the occurrence of package cracks during solder mounting and has excellent moisture resistance reliability.

Next, examples will be described together with comparative examples.

First, prior to the examples, three kinds of silica powders X to Z having a particle size distribution as shown in Table 1 below were prepared.

[0029]

[Table 1]

[0030]

Examples 1 to 8 and Comparative Examples 1 to 3 Tables 2 and 3 below.
Each of the components shown in Table 1 and the above silica powder were blended in the proportions shown in the same table, and mixed in a mixing roll machine at 100 ° C. for 5
The mixture was kneaded for a minute to obtain a powdery epoxy resin composition.

[0031]

[Table 2]

[0032]

[Table 3]

The melt viscosities at 175 ° C. of the epoxy resin compositions of Examples and Comparative Examples thus obtained were measured. A semiconductor device (80 pink watt flat package: QFP-) is obtained by sealing a semiconductor element by transfer molding with the epoxy resin composition.
80) was prepared. About this semiconductor device, 85 ℃ /
After moisture absorption at 85% RH for 48 hours, the number of package cracks generated after immersion in solder at 260 ° C. for 10 seconds was measured. The moisture absorption time was changed to 72 hours and the number of package cracks generated was measured. Furthermore, from -65 ° C / 5 minutes
A temperature cycle test (TCT test) was performed at 2,000 times and 4,000 times at 150 ° C./5 minutes to measure the number of package cracks generated.

[0034]

[Table 4]

[0035]

[Table 5]

From the results of Tables 4 and 5 above, Comparative Example 1
The product has poor moisture absorption resistance. Further, the products of Comparative Examples 2 and 3 are inferior in moisture absorption resistance and thermal shock resistance, and have high melt viscosity. On the other hand, in the example product, the number of package cracks generated in the heating test under moisture absorption and the TCT test is smaller than that in the comparative example product, and the melt viscosity is also low. From this, the products of Examples are excellent in moisture absorption resistance and thermal shock resistance, and also excellent in moldability.

─────────────────────────────────────────────────── ───

[Procedure amendment]

[Submission date] December 14, 1992

[Procedure Amendment 1]

[Document name to be amended] Statement

[Name of item to be corrected] Full text

[Correction method] Change

[Correction content]

[Document name] Statement

Title: Semiconductor device

[Claims]

Embedded image (B) A phenol aralkyl resin represented by the following general formula (2).

Embedded image (C) Inorganic filler. (A) Less than 3% by weight of particles having a particle size of less than 1 μm. (B) 10 to 22% by weight of particles having a particle size of 1 μm or more and 6 μm or less. (C) 10 to 24 having a particle size of 7 μm or more and 30 μm or less
weight%. (D) 20 to 4 having a particle size of 31 μm or more and 60 μm or less
0% by weight. (E) 20 to 4 having a particle size of 61 μm or more and 90 μm or less
0% by weight. (F) Less than 10% by weight of particles having a particle size of 91 μm or more.

Embedded image (B) A phenol aralkyl resin represented by the following general formula (2).

Embedded image (C) Inorganic filler. (A) Less than 3% by weight of particles having a particle size of less than 1 μm. (B) 10 to 22% by weight of particles having a particle size of 1 μm or more and 6 μm or less. (C) 10 to 24 having a particle size of 7 μm or more and 30 μm or less
weight%. (D) 20 to 4 having a particle size of 31 μm or more and 60 μm or less
0% by weight. (E) 20 to 4 having a particle size of 61 μm or more and 90 μm or less
0% by weight. (F) Less than 10% by weight of particles having a particle size of 91 μm or more.

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION This invention has a low internal stress,
The present invention relates to a semiconductor device having excellent thermal shock resistance, and having excellent package crack resistance and moisture resistance reliability that have low thermal stress when mounted on a substrate.

In recent years, semiconductor devices such as ICs and LSIs have tended to become larger in size with higher integration. in addition,
The plastic package for protecting the semiconductor element from the external environment has been thinned by adopting the surface mounting form typified by the quad flat package (QFP) and the small outline package (SOP) due to the high packing density. Is progressing. Then, due to the increase in size of the semiconductor element, problems such as damage to the element due to internal stress generated between the element and the encapsulating resin composition, package cracking, etc. occur, and a surface mounting form is adopted. Therefore, the water contained in the resin composition for encapsulation causes vaporization and explosion due to the heat during mounting, which causes a package crack, and there is a problem that the moisture resistance is deteriorated thereafter. Is required to be resolved.

[0003]

As a method for reducing the above internal stress, the content ratio of the inorganic filler contained in the encapsulating resin composition has been conventionally increased, and the thermal expansion coefficient of the encapsulating resin can be adjusted to A method of approaching this is used, or a method of lowering the elastic modulus by mixing silicone or rubber into the sealing resin composition or by preliminarily reacting it. However, in the method of increasing the content ratio of the above-mentioned inorganic filler, the viscosity of the entire composition increases with an increase in the content ratio, and excessive increase significantly impairs moldability. It is used in the range (hereinafter abbreviated as "%"). With this, sufficient low stress cannot be obtained. Further, in the method for reducing the elastic modulus of the encapsulating resin by mixing the above silicone or rubber, the moisture contained in the encapsulating resin composition is diffused faster, and as a result, package resistance during mounting is improved. There is a problem that the cracking property is deteriorated.

Further, as a method for improving the package crack resistance at the time of mounting, a method of using a low hygroscopic material and incorporating it into a sealing resin composition is used. However, since the low hygroscopic material has a low glass transition temperature, when used in a high temperature atmosphere, the amount of deformation of the obtained sealing resin is large.

The present invention has been made in view of the above circumstances, and an object thereof is to provide a semiconductor device having low internal stress and excellent thermal stress during mounting.

[0006]

In order to achieve the above object, the semiconductor device of the present invention has a semiconductor element sealed with an epoxy resin composition containing the following components (A) to (C). In the semiconductor device, the content of the inorganic filler as the component (C) is 80 to 9 in the epoxy resin composition.
The inorganic filler as the component (C) is set to 5% by weight, and contains 80% by weight or more of a spherical inorganic filler having a sphericity of 0.7 to 1.0 in terms of Wadell's sphericity. The granularity configuration of is set to the following (a) to (f). (A) An epoxy resin represented by the following general formula (1).

Embedded image (B) A phenol aralkyl resin represented by the following general formula (2).

Embedded image (C) Inorganic filler. (A) Less than 3% of particles having a particle size of less than 1 μm. (B) 10 to 22 having a particle size of 1 μm or more and 6 μm or less
%. (C) 10 to 24 having a particle size of 7 μm or more and 30 μm or less
%. (D) 20 to 4 having a particle size of 31 μm or more and 60 μm or less
0%. (E) 20 to 4 having a particle size of 61 μm or more and 90 μm or less
0%. (F) Less than 10% of particles having a particle size of 91 μm or more.

[0007]

The present inventors have carried out a series of studies in order to obtain a sealing resin that has low stress and is excellent in thermal stress during mounting. As a result, by combining the above-mentioned special epoxy resin and phenol aralkyl resin, and further adding an inorganic filler having a specific particle size distribution in a specific ratio in addition to this combination, the internal stress is reduced, and excellent mounting The inventors have reached the present invention by finding that thermal stress can be obtained.

Next, the present invention will be described in detail.

The epoxy resin composition used in the present invention comprises a special epoxy resin (component A), a phenol aralkyl resin (component B), and an inorganic filler containing a specific proportion of an inorganic filler having a specific particle size distribution. (Component C), which is usually obtained in the form of powder or a tablet formed by compressing it.

The above-mentioned special epoxy resin (component A) is a biphenyl type epoxy resin and has the following general formula (1):
It is represented by.

[0011]

[In the above formula (1), R _{1 to} R ₄ are alkyl groups having 1 to ₄ carbon atoms. ]

By adding a lower alkyl group to the phenyl ring having a glycidyl group, water repellency can be obtained. The epoxy resin component may be composed of only the above-mentioned special epoxy resin, or may be used in combination with other normally used epoxy resins.
In the former case, all of the component A is composed only of the special epoxy resin represented by the general formula (1), and in the latter case, a part of the component A is represented by the general formula (1). It will be composed of a special epoxy resin. As the above-mentioned epoxy resin which is usually used, cresol novolak type,
Examples include various epoxy resins such as phenol novolak type, novolak bis A type, and bisphenol A type. As the novolak type epoxy resin, those having an epoxy equivalent of 150 to 250 and a softening point of 50 to 130 ° C. are usually used, and as the cresol novolak type epoxy resin,
Epoxy equivalents of 180 to 210 and softening points of 60 to 110 ° C are generally used. When both are used in this way, it is preferable to set the epoxy resin represented by the general formula (1) to 20% or more, and particularly preferably 50% or more of the whole epoxy resin component.

The above-mentioned phenol aralkyl resin (component B)
Is represented by the following general formula (2), and acts as a curing agent for the epoxy resin component.

[0014]

[In the above formula (2), m is 0 or a positive integer. ]

This phenol aralkyl resin (component B)
Can be obtained, for example, by reacting aralkylphenol with phenol using a Friedel-Crafts catalyst. In general, a condensed heavy compound of α, α'-dimethoxy-p-xylene and a phenol monomer is known. The phenol aralkyl resin (component B) has a softening point of 70 to 110 ° C. and a hydroxyl equivalent of 150 to 220.
It is preferable to use those having Further, the phenol aralkyl resin may itself constitute the curing agent component, or may be used in combination with any other commonly used phenol resin. In the former case, all of the curing agent components are composed of the above-mentioned phenol aralkyl resin, and in the latter case, some of the curing agent components are composed of the above-mentioned phenol aralkyl resin. Examples of the usually used phenol resin include phenol novolak and cresol novolak. These novolak resins have a softening point of 50 to 110 ° C. and a hydroxyl equivalent of 70 to
It is preferable to use the one of 150. When the above-mentioned phenol aralkyl resin is used in combination with such a normal phenol resin, it is preferable to set the above-mentioned phenol aralkyl resin in a proportion of 50% or more, and particularly preferably 70% or more of the whole curing agent component. is there. And the compounding ratio of the above-mentioned phenol aralkyl resin (including ordinary phenol resin) is such that the above-mentioned special epoxy resin (component A)
It is preferable that the hydroxyl group in the phenol aralkyl resin is 0.7 to 1.3 equivalents per 1 equivalent of the epoxy group therein. 0.9-1.1 is more suitable.
It is equivalent.

Examples of the above-mentioned inorganic filler (component C) include aluminum oxide, beryllium oxide, silicon carbide and silicon nitride, as well as crystalline and fusible fillers. And 80% or more of the whole inorganic filler has a sphericity of 0.7 to 1.0 in terms of Wadell's sphericity, and the whole inorganic filler needs to be set to the following particle size constitution. .. 0.7 in the Wadell's sphericity
Having a sphericity of 1.0 means that the sphericity of a particle is 0.7 (the diameter of a circle equal to the projected area of the particle) / (the diameter of the smallest circle circumscribing the projected image of the particle). It has a value of 1.0. That is, in the inorganic filler, the epoxy resin composition has excellent fluidity when the Wadell's sphericity and particle size composition are within predetermined ranges. This is because the fluidity is impaired outside the range of the particle size constitution shown below.

(A) Less than 3% of particles having a particle size of less than 1 μm. (B) 10 to 22 having a particle size of 1 μm or more and 6 μm or less
%. (C) 10 to 24 having a particle size of 7 μm or more and 30 μm or less
%. (D) 20 to 4 having a particle size of 31 μm or more and 60 μm or less
0%. (E) 20 to 4 having a particle size of 61 μm or more and 90 μm or less
0%. (F) Less than 10% of particles having a particle size of 91 μm or more.

The content of the inorganic filler having the above characteristics must be set in the range of 80 to 95% of the total epoxy resin composition. That is, if the content is less than 80%, the thermal shock resistance and thermal stress resistance will be impaired, and conversely, if it exceeds 95%, the fluidity will decrease.

In the epoxy resin composition used in the present invention, a curing accelerator, a flame retardant, a coupling agent, wax, etc. may be used, if necessary, in addition to the components A to C.

Examples of the curing accelerator include amine-based, phosphorus-based, boron-based and phosphorus-boron-based curing accelerators, which may be used alone or in combination.

As the flame retardant, compounds such as novolak type brominated epoxy or bis A type epoxy, antimony trioxide and antimony pentoxide may be used alone or in combination as appropriate.

As the coupling agent, methoxy or ethoxysilane such as glycidyl ether type, amine type, thiocyan type, urea type, etc. is appropriately used alone or in combination. As a method of using the inorganic filler, a dry blending method, a preheating reaction method, or a premixing method with respect to the organic component raw material can be appropriately selected.

Examples of the wax include compounds such as higher fatty acids, higher fatty acid esters, and higher fatty acid calcium, which may be used alone or in combination.

The epoxy resin composition used in the present invention is compounded with a rubber component such as silicone oil and silicone rubber, synthetic rubber, etc. in addition to the above-mentioned additives to reduce stress, and a moisture resistance reliability test is conducted. In order to improve the reliability of the above, an ion trapping agent represented by hydrotalcite or the like may be blended.

The epoxy resin composition used in the present invention can be manufactured, for example, as follows. That is, first, the above-mentioned special epoxy resin, phenol aralkyl resin, inorganic filler and other additives as necessary are appropriately mixed and premixed, and then kneaded in a kneading machine such as a mixing roll machine in a heated state and melt-mixed. To do. Then, it can be manufactured by a series of steps in which it is cooled to room temperature, pulverized by a known means, and tableted if necessary.

[0026]

The semiconductor device thus obtained is
An epoxy resin composition containing a special epoxy resin (component A) and a phenol aralkyl resin (component B), and further containing a specific proportion of an inorganic filler (component C) having a specific particle size distribution in addition to this combination Therefore, it is obtained by resin-sealing a semiconductor element, which suppresses the occurrence of package cracks during solder mounting and has excellent moisture resistance reliability.

Next, examples will be described together with comparative examples.

First, prior to the examples, three kinds of silica powders X to Z having a particle size distribution as shown in Table 1 below were prepared.

[0029]

[Table 1]

[0030]

Examples 1 to 8 and Comparative Examples 1 to 3 Tables 2 and 3 below.
Each of the components shown in Table 1 and the above silica powder were blended in the proportions shown in the same table, and mixed in a mixing roll machine at 100 ° C. for 5
The mixture was kneaded for a minute to obtain a powdery epoxy resin composition.

[0031]

[Table 2]

[0032]

[Table 3]

The melt viscosities at 175 ° C. of the epoxy resin compositions of Examples and Comparative Examples thus obtained were measured. A semiconductor device (80 pink watt flat package: QFP-) is obtained by sealing a semiconductor element by transfer molding with the epoxy resin composition.
80) was prepared. About this semiconductor device, 85 ℃ /
After moisture absorption at 85% RH for 48 hours, the number of package cracks generated after immersion in solder at 260 ° C. for 10 seconds was measured. The moisture absorption time was changed to 72 hours and the number of package cracks generated was measured. Furthermore, from -65 ° C / 5 minutes
A temperature cycle test (TCT test) was performed at 2,000 times and 4,000 times at 150 ° C./5 minutes to measure the number of package cracks generated.

[0034]

[Table 4]

[0035]

[Table 5]

From the results of Tables 4 and 5 above, Comparative Example 1
The product has poor moisture absorption resistance. Further, the products of Comparative Examples 2 and 3 are inferior in moisture absorption resistance and thermal shock resistance, and have high melt viscosity. On the other hand, in the example product, the number of package cracks generated in the heating test under moisture absorption and the TCT test is smaller than that in the comparative example product, and the melt viscosity is also low. From this, the products of Examples are excellent in moisture absorption resistance and thermal shock resistance, and also excellent in moldability.

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁵ Identification number Internal reference number FI Technical display location C08K 7/18 NLD 7167-4J C08L 63/00 (72) Inventor Kazuhiro Ikemura Shimohozumi Ibaraki, Osaka 1-2 1-2 Nitto Denko Corporation (72) Inventor Hisashi Nakajima 1-2 1-2 Shimohozumi, Ibaraki-shi, Osaka Prefecture In-house Nitto Denko Corporation (72) Takashi Takashi 1-chome, Shimohozumi, Ibaraki City, Osaka Prefecture No. 1 and 2 Nitto Denko Corporation

Claims (2)

[Claims] 1. In a semiconductor device obtained by encapsulating a semiconductor element with an epoxy resin composition containing the following components (A) to (C), the content of the inorganic filler as the component (C) is The inorganic filler, which is set to 80 to 95% by weight in the epoxy resin composition and which is the component (C), is a spherical inorganic filler having a sphericity of 0.7 to 1.0 in Wadell's sphericity. A semiconductor device containing 80% by weight or more and having a particle size composition as a whole set to the following (a) to (f). (A) An epoxy resin represented by the following general formula (1). [Chemical 1] (B) A phenol aralkyl resin represented by the following general formula (2). [Chemical 2] (C) Inorganic filler. (A) Less than 3% by weight of particles having a particle size of less than 1 μm. (B) 10 to 22% by weight of particles having a particle size of 1 μm or more and 6 μm or less. (C) 10 to 24 having a particle size of 7 μm or more and 30 μm or less
weight%. (D) 20 to 4 having a particle size of 31 μm or more and 60 μm or less
0% by weight. (E) 20 to 4 having a particle size of 61 μm or more and 90 μm or less
0% by weight. (F) Less than 10% by weight of particles having a particle size of 91 μm or more. 2. An epoxy resin composition for semiconductor encapsulation comprising the following components (A) to (C), wherein the content of the inorganic filler which is the component (C) is 8 in the epoxy resin composition.
The inorganic filler as the component (C) is set to 0 to 95% by weight, and contains 80% by weight or more of a spherical inorganic filler having a sphericity of 0.7 to 1.0 in the Wadell's sphericity. An epoxy resin composition for semiconductor encapsulation, wherein the particle size composition of the whole is set to the following (a) to (f). (A) An epoxy resin represented by the following general formula (1). [Chemical 3] (B) A phenol aralkyl resin represented by the following general formula (2). [Chemical 4] (C) Inorganic filler. (A) Less than 3% by weight of particles having a particle size of less than 1 μm. (B) 10 to 22% by weight of particles having a particle size of 1 μm or more and 6 μm or less. (C) 10 to 24 having a particle size of 7 μm or more and 30 μm or less
weight%. (D) 20 to 4 having a particle size of 31 μm or more and 60 μm or less
0% by weight. (E) 20 to 4 having a particle size of 61 μm or more and 90 μm or less
0% by weight. (F) Less than 10% by weight of particles having a particle size of 91 μm or more.