JPH05166980A - Semiconductor device - Google Patents

Abstract

PURPOSE:To enable a semiconductor device provided with bumps to be enhanced in heat dissipating properties making it high in mounting density. CONSTITUTION:A semiconductor chip 11, a heat dissipating plate 15 disposed confronting the surface of the semiconductor chip 11, and a heat dissipating bump 14 which brings the semiconductor chip into physical contact with the heat dissipating plate 15 are provided. The heat released from the semiconductor chip 11 is transmitted to the heat dissipating plate 15 and dissipated from the plate 15. The heat is primarily released from the surface of the semiconductor chip 11 and transmitted to the heat dissipating plate 15 through the inter mediary of the bump 14 provided on the surface of the surface of the semiconductor chip 11, so that the heat released from the semiconductor chip 11 can be efficiently dissipated. As heat is dissipated from both the sides of the heat dissipating plate 15, the plate 15 is high in heat dissipating efficiency, and heat is dissipated from the heat dissipating plate 15 nearly equal to the semiconductor chip 11 in area, so that a semiconductor device can be miniaturized.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly to a semiconductor device using bumps.

In recent years, semiconductor devices have become larger and larger, and accordingly, power consumption and heat generation amount have increased.

Therefore, a method for effectively radiating the heat generated by the semiconductor chip is desired.

[0004]

2. Description of the Related Art FIGS. 7 and 8 show a conventional semiconductor device 1. The semiconductor device 1 is roughly composed of a package 2 and a radiation fin 3, the package 2 is made of resin, and the radiation fin 3 is made of metal such as aluminum.

The package 2 is obtained by sealing the semiconductor chip 5 with a resin mold, and the semiconductor chip 5 is protected by the package 2. The back surface of the semiconductor chip 5 is configured to come into contact with the heat radiation fins 3, so that the heat generated in the semiconductor chip 5 is generated by the heat radiation fins 3.
Heat is dissipated by. Further, the package 2 is provided with a plurality of lead pins 4, and the lead pins 4 are electrically connected to the semiconductor chip by bumps 6.

[0006]

However, in the above-described conventional semiconductor device 1, since the package 2 is provided with the radiation fins 3 having a large shape, the shape of the semiconductor device 1 also becomes large, and the semiconductor device 1 However, there is a problem that high-density mounting cannot be performed.

In recent years, semiconductor technology has improved, and semiconductor devices have come to be used at higher speed and higher integration.
Along with this, the power consumption and the amount of heat generation have also increased remarkably. Therefore, it is necessary to efficiently dissipate heat while realizing high-density mounting. However, in the semiconductor device 1 having the conventional configuration described above,
I couldn't make both.

The present invention has been made in view of the above points, and an object of the present invention is to provide a semiconductor device capable of efficiently radiating heat while realizing high-density mounting.

[0009]

Means for Solving the Problems The above-described problems are solved by a semiconductor chip, a heat radiating plate arranged to face the surface of the semiconductor chip, and a heat radiating bump for physically contacting the semiconductor chip and the heat radiating plate. This can be solved by a semiconductor device characterized by being provided with.

Further, in addition to the above-mentioned heat radiation bumps, electric connection bumps are formed on the semiconductor chip, and the heat radiation bumps are arranged so as to surround the electric connection bumps.
Further, by arranging the heat radiation bumps in a grid pattern on the semiconductor chip, and further by collectively arranging the heat radiation bumps at the heat generation positions on the semiconductor chip, it is possible to realize even more effectively. it can.

[0011]

In the semiconductor device having the above structure, the heat generated in the semiconductor chip is transferred to the heat radiating plate facing the semiconductor chip via the bumps and radiated by the heat radiating plate. It is the surface of the semiconductor chip that generates heat, and the heat is transferred to the heat sink through the bumps provided on the surface of the semiconductor chip. Therefore, the heat of the semiconductor chip is efficiently transferred to the heat sink. Transmitted.

Further, since the heat sink radiates heat over the entire front and back surfaces, the heat radiation efficiency is good, and the heat radiating plate having a surface area substantially equal to that of the heat conductor chip can surely radiate heat, so that the semiconductor device is miniaturized. Can be planned.

[0013]

Embodiments of the present invention will now be described with reference to the drawings. FIG. 1A is a plan view of a semiconductor device 10 which is a first embodiment of the present invention, and FIG. 1B shows a cross section taken along the line AA in FIG. FIG. 6C shows a cross section taken along the line BB. Each drawing shows the semiconductor device 10 after the bump process.

In the figure, 11 is a semiconductor chip, a pad 12 made of, for example, an aluminum film is formed on the semiconductor chip, and an electrical connection made of solder (Pb-Sn) or gold (Au) is further formed on the pad 12. Bumps 13 are formed. Further, at the central position of the semiconductor chip, a heat dissipation bump 14 (shown in a satin finish), which is an essential part of the present invention, is formed.

Further, in the figure, reference numeral 15 denotes a heat radiating plate having a surface area substantially equal to the surface area of the semiconductor chip 11, which is formed of an insulating metal plate (which may be a ceramic plate or the like) having good heat radiating efficiency. The semiconductor chip 11 is attached to the heat sink 15.
Is provided with a plurality of lead pins 16 for electrically connecting to the external circuit, and the arrangement position of the lead pins 16 corresponds to the arrangement position of the pad 12. Also, the heat sink 1
5, a contact portion 17 protruding downward is formed at a position corresponding to the disposition position of the heat dissipation bump 14 formed at the center of the semiconductor chip 11 described above.

The semiconductor chip 11 and the heat dissipation plate 15 having the above structure are integrated by bonding the electrical connection bumps 13 to the lead pins 16 and the heat dissipation bumps 14 to the contact portions 17 in the bump process in the semiconductor manufacturing process. Be converted. As a result, the semiconductor chip 12 becomes the pad 1
2 and the bumps 13 for electrical connection, electrically connected to the lead pin 16, and the semiconductor chip 11 and the heat sink 15
Are in physical contact with each other via the heat dissipation bumps 14.

Therefore, even if heat is generated by the operation of the semiconductor chip 11, this heat is conducted to the heat radiating plate 15 via the heat radiating bumps 14 and is radiated by the heat radiating plate 15. As a result, heat rise of the semiconductor chip 11 is suppressed and stable operation can be realized, so that the reliability of the semiconductor device 10 can be improved. Also, the heat dissipation bump 1
Since 4 is disposed on the surface of the semiconductor chip 11 where heat is easily generated, the heat generated in the semiconductor chip 11 can be efficiently released to the heat dissipation plate 15. Furthermore, since the heat dissipation plate 15 is held by the bumps 13 and 14 so as to be opposed to and separated from the semiconductor chip 11, a large area (that is, a heat dissipation area) in contact with the outside air can be secured. Therefore, also by this, the heat dissipation efficiency is improved, and the heat rise of the semiconductor chip 11 can be effectively suppressed.

FIG. 2A is a plan view of a semiconductor device 20 which is a second embodiment of the present invention, and FIG. 2B is FIG. 2A.
2C shows a cross section taken along the line C-C, and FIG. 6C shows a cross section taken along the line D-D. Each figure also shows the semiconductor device 20 after the bump process. In each figure, the same components as those of the semiconductor device 10 shown in FIG. 1 are designated by the same reference numerals and the description thereof will be omitted.

The semiconductor device 10 according to the first embodiment described above.
In the above, the structure is shown in which the heat dissipation bumps 14 are provided only at the central position of the semiconductor chip 11. However, as the semiconductor device becomes larger and the amount of heat generation increases, there is a possibility that sufficient heat dissipation cannot be achieved only by forming the heat dissipation bump 14 at the central position.

In view of this, the present embodiment is characterized in that the heat dissipation bumps 22 (shown in satin) are formed in a grid pattern in order to widen the contact area between the semiconductor chip 11 and the heat dissipation plate 21 by the bumps. is there.

The position where the heat radiation bumps 22 are arranged is selected so as not to interfere with the position where the electric connection bumps 13 connected to the lead pins 16 are arranged. With the above-described configuration, the contact area between the semiconductor chip 11 and the heat dissipation plate 21 is increased, and the heat dissipation of the semiconductor chip 11 can be performed more efficiently. You can also deal with it.

3 and 4 are views showing a modification of the semiconductor device 20 of the second embodiment.

The semiconductor device 30 shown in FIG. 3 has the same structure as the semiconductor device 20 according to the second embodiment. However, in order to further improve the heat dissipation efficiency, the semiconductor device 30 is removed except for a predetermined range in the vicinity of the mounting position of the electrical connection bumps 13. A heat radiation bump 31 is provided on the entire surface of the semiconductor chip 11 so as to surround it. Also, FIG.
In the semiconductor device 40 shown in (1), the heat dissipation efficiency is improved by alternately arranging the electrical connection bumps 13 and the heat dissipation bumps 41 in a staggered pattern. As described above, by appropriately selecting the disposition areas of the heat dissipation bumps 31 and 41, it becomes possible to perform heat dissipation adapted to the heat generation amount of the semiconductor chip 11.

In the above-mentioned embodiments, the heat dissipation bumps are arranged at positions different from the positions where the electric connection bumps are formed, but the standardized PGA (Pin Grid A) is used.
In the rrayPackage), there may be lead pins 16a that are not generally used for connecting the semiconductor chip 11 and an external circuit, like the semiconductor device 50 shown in FIG. Conventionally, bumps are not formed on such lead pins 16a, but by disposing the bumps 14 also between the lead pins 16a and the semiconductor chip 11, the heat dissipation plate 15 and the semiconductor chip 11 are brought into contact with each other. The area can be increased and the heat dissipation efficiency of the semiconductor chip 11 can be improved.

Further, in the case of a structure in which the semiconductor chip locally generates heat, the heat dissipation bumps 61 may be collectively arranged at the heat generating portions as in the semiconductor device 60 shown in FIG. .. With this configuration, the heat generation position can be locally cooled, so that the influence of heat on other parts can be reduced.

In each of the above-described embodiments, the same material is used for the electrical connection bumps and the heat dissipation bumps, but the electrical connection bumps and the heat dissipation bumps need not necessarily be made of the same material ( If they are matched, the manufacturing process becomes easier), and a material having good conductivity may be used as the bump for electrical connection, and a material having good thermal conductivity may be used as the bump for heat dissipation.

[0027]

As described above, according to the present invention, the heat generated in the semiconductor chip is transferred to the heat radiating plate arranged so as to face the semiconductor chip via the bumps and radiated by the heat radiating plate. The surface of the semiconductor chip mainly generates heat, and the heat is transferred to the heat sink through the bumps provided on the surface of the semiconductor chip. Therefore, the heat of the semiconductor chip is efficiently transferred to the heat sink. Thus, the heat dissipation of the semiconductor chip can be effectively suppressed, and the heat rise of the semiconductor chip can be effectively suppressed, and the reliability of the semiconductor device can be improved.

Further, since the heat radiating plate radiates heat over the entire front and back surfaces, the heat radiating efficiency is good, and the heat radiating plate having a surface area substantially equal to that of the heat conductor chip can radiate heat, so that the semiconductor device can be miniaturized. be able to.

[Brief description of drawings]

FIG. 1 is a diagram for explaining a semiconductor device that is a first embodiment of the present invention.

FIG. 2 is a diagram for explaining a semiconductor device which is a second embodiment of the present invention.

FIG. 3 is a diagram for explaining a semiconductor device which is a modified example of the second embodiment.

FIG. 4 is a diagram for explaining a semiconductor device which is a modified example of the second embodiment.

FIG. 5 is a diagram for explaining a semiconductor device that radiates heat using unused lead pins.

FIG. 6 is a diagram showing an example in which the present invention is applied to a semiconductor device having a semiconductor chip that locally generates heat.

FIG. 7 is a diagram illustrating an example of a conventional semiconductor device.

FIG. 8 is a diagram for explaining an example of a conventional semiconductor device.

[Explanation of symbols]

 10, 20, 30, 40, 50, 60 Semiconductor device 11 Semiconductor chip 12 Pad 13 Electrical connection bump 14, 22, 31, 41, 61 Heat dissipation bump 15,21 Heat dissipation plate 16, 16a Lead pin 17 Contact part

Claims (4)

[Claims] 1. A semiconductor chip (11) and a heat radiating plate (15, 15) arranged to face the surface of the semiconductor chip (11).
21), the semiconductor chip (11) and the heat sink (15,
21) for heat radiation to physically contact the bumps (14, 2)
2, 31, 41, 61) are provided. 2. The semiconductor chip (11) has bumps (13) for electrical connection in addition to the bumps (31) for heat dissipation, and the bumps (31) for heat dissipation are connected to the bumps (31) for electrical connection. 13. The semiconductor device according to claim 1, wherein the semiconductor device is arranged so as to surround 13). 3. The semiconductor device according to claim 1, wherein the heat radiation bumps (22) are arranged in a grid pattern on the semiconductor chip (11). 4. The semiconductor device according to claim 1, wherein the heat-dissipating bumps (61) are collectively arranged at a heat generation position on the semiconductor chip (11).