JPH0514950U - Contact for measuring semiconductor device characteristics - Google Patents

Contact for measuring semiconductor device characteristics

Info

Publication number
JPH0514950U
JPH0514950U JP6036491U JP6036491U JPH0514950U JP H0514950 U JPH0514950 U JP H0514950U JP 6036491 U JP6036491 U JP 6036491U JP 6036491 U JP6036491 U JP 6036491U JP H0514950 U JPH0514950 U JP H0514950U
Authority
JP
Japan
Prior art keywords
lead
contactor
semiconductor device
contact
pressure contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6036491U
Other languages
Japanese (ja)
Inventor
康一 南
Original Assignee
関西日本電気株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 関西日本電気株式会社 filed Critical 関西日本電気株式会社
Priority to JP6036491U priority Critical patent/JPH0514950U/en
Publication of JPH0514950U publication Critical patent/JPH0514950U/en
Pending legal-status Critical Current

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  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

(57)【要約】 【目的】 ICソケットの接触子の先端とリードとの擦
れ合いによるメッキ膜の破損およびメッキ屑の付着によ
る短絡と耐電圧の低下を防止すること。 【構成】 ICソケット(3)に固着される接触子
(8)を、リード(4)への圧接点(10A)と接触子本
体(10)の基端部(10B)とを結ぶ垂直2等分線(9)
を対称軸として左右対称に架設された横長の閉ループ状
バネ材から形成する。接触子(8)の上面には、上記対
称軸(9)と同心配置状態で上向き突起からなるリード
(4)への圧接点(10A)を形成する。電気的特性の測
定時に、荷重Pが付加されると、接触子本体(10)は、
閉ループ形状を保持したまま左右対称に弾性変形し、圧
接点(10A)がリード(4)の裏面に沿って横方向に移
動しない状態を作り出す。
(57) [Abstract] [Purpose] To prevent damage to the plating film due to friction between the tips of the contacts of the IC socket and the leads, and to prevent short-circuiting and lowering of the withstand voltage due to the deposition of plating debris. [Structure] A vertical connector etc. that connects the contactor (8) fixed to the IC socket (3) to the pressure contact (10A) to the lead (4) and the base end (10B) of the contactor body (10). Dividing line (9)
Is formed from a horizontally long closed loop spring material that is installed symmetrically with respect to the axis of symmetry. On the upper surface of the contactor (8), a pressure contact (10A) to the lead (4) consisting of an upward protrusion is formed concentrically with the axis of symmetry (9). When a load P is applied during the measurement of electrical characteristics, the contactor body (10) will
It elastically deforms symmetrically while maintaining the closed loop shape, and creates a state in which the pressure contact (10A) does not move laterally along the back surface of the lead (4).

Description

【考案の詳細な説明】[Detailed description of the device]

【0001】[0001]

【産業上の利用分野】[Industrial applications]

本考案は半導体装置の特性測定用接触子に関するものである。 The present invention relates to a contact for measuring characteristics of a semiconductor device.

【0002】[0002]

【従来の技術】[Prior Art]

表面実装タイプの半導体装置(1)は、図2(A)に示すようにプリント基板 上に実装するに先立って、位置決め治具(5)を利用して電気的特性測定用の接 触子(2)を具えたICソケット(3)に供給し、リード(4)に接触子(2) の先端を圧接させることによってリード(4)と接触子(2)の導通状態を測定 し、良品と不良品を判別している。 As shown in FIG. 2 (A), the surface mount type semiconductor device (1) uses a positioning jig (5) to mount a contact ( 2) is supplied to the IC socket (3), and the tip of the contact (2) is pressed against the lead (4) to measure the conduction state of the lead (4) and the contact (2). Defective products are identified.

【0003】[0003]

【考案が解決しようとする課題】[Problems to be solved by the device]

半導体装置(1)のリード(4)の表面には半田メッキ等が施こされており、 このメッキ面にバネ材からなる接触子(2)の先端を弾性的に押付けることによ って導通状態を測定している。図2(B)は特性測定時のリード(4)と接触子 (2)の圧接状態を拡大して図示するものであるが、リード(4)の上方から荷 重Pが作用したとき接触子(2)は2点鎖線および符号L1、L2で示すように左 右非対称に弾性変形し、リード(4)の裏面に沿って接触子(2)の先端(2A) が滑る。接触子(2)の先端(2A)により、リード(4)の半田メッキ面が擦ら れることによってメッキ膜が傷付き製品の信頼性が低下する。また、留ったメッ キ屑が製品に付着することによって半導体装置(1)の実装時に短絡や耐電圧の 低下等の問題が発生する。The surface of the lead (4) of the semiconductor device (1) is plated with solder, and the tip of the contact (2) made of a spring material is elastically pressed against the plated surface. Continuity is being measured. FIG. 2B is an enlarged view of the pressure contact state between the lead (4) and the contactor (2) at the time of measuring the characteristic. The contactor when the load P acts from above the lead (4). (2) is elastically deformed asymmetrically left and right as indicated by a chain double-dashed line and symbols L 1 and L 2 , and the tip (2A) of the contact (2) slides along the back surface of the lead (4). The tip (2A) of the contactor (2) rubs the solder-plated surface of the lead (4), which damages the plated film and reduces the reliability of the product. In addition, the accumulated debris adheres to the product, which causes problems such as a short circuit and a decrease in withstand voltage when the semiconductor device (1) is mounted.

【0004】[0004]

【課題を解決するための手段】[Means for Solving the Problems]

上記課題の解決手段として本考案は、測定ブロックの上面に導電性バネ材から なる特性測定用接触子を直立状態で固着してなるICソケットにおいて、先端を 半導体装置のリードに圧接し当該半導体装置の電気的特性を測定する接触子を、 リードへの圧接点と接触子本体の基端部とを結ぶ垂直2等分線を対称軸として左 右対称に架設された横長の閉ループ状バネ材から形成し、接触子本体の上面に、 上記対称軸と同心配置状態で半導体装置のリードへの圧接点を形成したことを特 徴とする、半導体装置の特性測定用接触子を提供するものである。 As a means for solving the above problems, the present invention provides an IC socket in which a characteristic measuring contact made of a conductive spring material is fixed to an upper surface of a measuring block in an upright state, and a tip of the IC socket is pressed against a lead of the semiconductor device. The contactor for measuring the electrical characteristics of is composed of a horizontally long closed-loop spring material that is installed symmetrically to the left and right with the vertical bisector connecting the pressure contact to the lead and the base end of the contactor body as the axis of symmetry. Provided is a contact for measuring characteristics of a semiconductor device, which is characterized in that a pressure contact to a lead of the semiconductor device is formed on the upper surface of the contact body in a concentric arrangement with the axis of symmetry. ..

【0005】[0005]

【作用】[Action]

ICソケットに固着される接触子を、リードへの圧接点と接触子本体の基端部 とを結ぶ垂直2等分線を対称軸として左右対称に架設された横長の閉ループ状バ ネ材から形成し、接触子の上面には、上記対称軸と同心配置状態で半導体装置の リードへの圧接点を形成する。半導体装置のリードを接触子本体の先端部分に圧 接させたとき、荷重の付加によって接触子本体は上記閉ループ形状を保持したま ま左右対称に弾性変形し、リードへの圧接点が横方向に移動しない状態を作り出 す。この結果、圧接位置の横方向変化によるリードメッキ膜の損傷やメッキ屑の 発生が回避される。 The contactor fixed to the IC socket is formed of a horizontally long closed loop-shaped bar material that is symmetrically installed with the vertical bisector connecting the pressure contact to the lead and the base end of the contactor body as the axis of symmetry. Then, pressure contacts to the leads of the semiconductor device are formed on the upper surface of the contact in a concentric arrangement with the axis of symmetry. When the lead of the semiconductor device is pressed against the tip of the contactor body, the contactor body is elastically deformed symmetrically while maintaining the closed loop shape due to the applied load, and the pressure contact to the lead is laterally moved. Create a state that does not move. As a result, damage to the lead plating film and generation of plating scraps due to the lateral change of the press contact position are avoided.

【0006】[0006]

【実施例】【Example】

図1(A)は、ICソケット(3)上にリード(4)への圧接点(10A)と接 触子本体(10)の基端部(10B)とを結ぶ垂直2等分線(9)を対称軸として左 右対称に横手が長円形の閉ループ状パネ材を架設することによって形成された半 導体装置(1)の特性測定用接触子(8)を示す。接触子本体(10)の上面には 、上記垂直2等分線(9)からなる対称軸と同心配置状態で半導体装置(1)の リード(4)の下面への圧接点(10A)が形成されている。接触子本体(10)は 、導電性の薄いバネ材からエッチング等の成形手段を利用して製作する。圧接点 (10A)は、閉ループ状バネ材からなる接触子本体(10)の上面中央部分に比較 的小さな曲率半径で上向きの先端突起を突出させることによって形成されている 。 FIG. 1A shows a vertical bisector (9) connecting the pressure contact (10A) to the lead (4) and the base end (10B) of the contact body (10) on the IC socket (3). 2) shows a characteristic measurement contactor (8) of a semiconductor device (1) formed by erection of a closed-loop panel material having an oval crosswise symmetrically with respect to left and right as a symmetry axis. On the upper surface of the contact body (10), a pressure contact (10A) is formed on the lower surface of the lead (4) of the semiconductor device (1) in a concentric arrangement with the axis of symmetry composed of the above-mentioned perpendicular bisectors (9). Has been done. The contactor body (10) is manufactured from a thin conductive spring material by using a molding means such as etching. The pressure contact (10A) is formed by projecting an upward tip projection with a comparatively small radius of curvature in the central portion of the upper surface of the contact body (10) made of a closed loop spring material.

【0007】 半導体装置(1)のリード(4)を接触子本体(10)の先端部分に設けられた 圧接点(10A)に押付けたとき、荷重Pの付加によって接触子本体(10)は横長 長円形の閉ループ部分を左右対称に弾性変形させ、これによって、リード(4) への圧接点(10A)が2点鎖線で示すように垂直方向のみに移動し横方向には移 動しない状態を作り出す。この結果、圧接位置の横方向変化と擦れ合い起因する リード(4)のメッキ面の損傷やメッキ屑の発生が略完全に回避される。When the lead (4) of the semiconductor device (1) is pressed against the pressure contact (10A) provided at the tip of the contactor body (10), the contactor body (10) becomes horizontally long due to the addition of the load P. The oval closed loop part is elastically deformed symmetrically so that the pressure contact (10A) to the lead (4) moves only in the vertical direction and does not move in the lateral direction as shown by the chain double-dashed line. produce. As a result, damage to the plating surface of the lead (4) and generation of plating scraps due to the lateral change of the pressure contact position and rubbing against each other are substantially completely avoided.

【0008】 図1(B)は、本考案の第2の具体例を示すものであって、横長矩形の閉ルー プ状バネ材によって接触子本体(10)が作成されている。また、図1(C)は、 本考案の第3の具体例を示すものであって、上面中央部分にくぼみを有する横長 矩形の閉ループ状バネ材によって接触子の本体(10)が作成されている。第2の 具体例および第3の具体例において荷重Pが作用したときの接触子本体(10)の 変形状態と圧接点(10A)の垂直変位状態は、図1(A)に示すものと同一であ るので、重複する事項に関しては説明を省略する。FIG. 1B shows a second specific example of the present invention, in which the contactor body (10) is made of a horizontally long rectangular closed loop-shaped spring material. FIG. 1C shows a third embodiment of the present invention, in which the contact body (10) is formed by a horizontally long rectangular closed loop spring material having a recess at the center of the upper surface. There is. The deformed state of the contact body (10) and the vertically displaced state of the pressure contact (10A) when the load P acts in the second and third examples are the same as those shown in FIG. 1 (A). Therefore, the description of the overlapping matters will be omitted.

【0009】[0009]

【考案の効果】[Effect of the device]

リードを接触子本体の中央先端部分に押付けたとき、ICソケットに一端固定 状態で立設された接触子本体が圧接点を中心にして左右対称に弾性変形すること によって、リードと接触子本体の圧接点との間に横方向への相対変位が起こらな い状態が作り出される。この結果、リードと接触子本体の圧接点との擦れ合いに よるメッキ膜の損傷やメッキ屑の発生が略完全に防止される。従って、製品の信 頼性が向上し、メッキ屑の付着による短絡や耐電圧の低下等の問題が解消される 。 When the lead is pressed against the central tip of the contactor body, the contactor body, which is erected at one end in the IC socket and stands upright, elastically deforms symmetrically around the pressure contact. A state in which relative displacement in the lateral direction does not occur between the pressure contact is created. As a result, the damage of the plating film and the generation of plating scraps due to the friction between the leads and the pressure contacts of the contactor body are almost completely prevented. Therefore, the reliability of the product is improved, and problems such as short circuit due to adhesion of plating scraps and reduction in withstand voltage are solved.

【図面の簡単な説明】[Brief description of drawings]

【図1】本考案の第1乃至第3の具体例を示すリードお
よび接触子本体の正面図
FIG. 1 is a front view of a lead and a contactor body showing first to third embodiments of the present invention.

【図2】(A)ICソケットと従来型接触子の斜視図
(B)従来型接触子の弾性変形状態の正面図
FIG. 2A is a perspective view of an IC socket and a conventional contactor. FIG. 2B is a front view of the conventional contactor in an elastically deformed state.

【符号の説明】[Explanation of symbols]

3 ICソケット 4 リード 8 接触子 9 垂直2等分線(対称軸) 10 接触子本体 10A 圧接点 10B 接触子本体の基端部 P 荷重 3 IC socket 4 Lead 8 Contact 9 Vertical bisector (symmetry axis) 10 Contact body 10A Pressure contact 10B Base end of contact body P Load

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 【請求項1】 測定ブロックの上面に導電性バネ材から
なる特性測定用接触子を直立状態で固着してなるICソ
ケットにおいて、 先端を半導体装置のリードに圧接し当該半導体装置の電
気的特性を測定する接触子を、リードへの圧接点と接触
子本体の基端部とを結ぶ垂直2等分線を対称軸として左
右対称に架設された横長の閉ループ状バネ材から形成
し、接触子本体の上面に、上記対称軸と同心配置状態で
半導体装置のリードへの圧接点を形成したことを特徴と
する、半導体装置の特性測定用接触子。
1. In an IC socket in which a contact for characteristic measurement made of a conductive spring material is fixed in an upright state on the upper surface of a measurement block, the tip of the IC socket is pressed against a lead of the semiconductor device to check the electrical characteristics of the semiconductor device. The contactor to be measured is formed of a horizontally long closed loop spring material symmetrically installed with a vertical bisector connecting the pressure contact to the lead and the base end of the contactor body as a symmetry axis. A contact for measuring characteristics of a semiconductor device, characterized in that a pressure contact to a lead of the semiconductor device is formed on an upper surface of the semiconductor device in a concentric arrangement with the axis of symmetry.
JP6036491U 1991-07-31 1991-07-31 Contact for measuring semiconductor device characteristics Pending JPH0514950U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6036491U JPH0514950U (en) 1991-07-31 1991-07-31 Contact for measuring semiconductor device characteristics

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6036491U JPH0514950U (en) 1991-07-31 1991-07-31 Contact for measuring semiconductor device characteristics

Publications (1)

Publication Number Publication Date
JPH0514950U true JPH0514950U (en) 1993-02-26

Family

ID=13140016

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6036491U Pending JPH0514950U (en) 1991-07-31 1991-07-31 Contact for measuring semiconductor device characteristics

Country Status (1)

Country Link
JP (1) JPH0514950U (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5625596U (en) * 1979-08-01 1981-03-09
WO2015136785A1 (en) * 2014-03-14 2015-09-17 オムロン株式会社 Pressure contact terminal

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61150249A (en) * 1984-12-24 1986-07-08 Toshiba Corp Socket pin for semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61150249A (en) * 1984-12-24 1986-07-08 Toshiba Corp Socket pin for semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5625596U (en) * 1979-08-01 1981-03-09
WO2015136785A1 (en) * 2014-03-14 2015-09-17 オムロン株式会社 Pressure contact terminal
JP2015176719A (en) * 2014-03-14 2015-10-05 オムロン株式会社 Pressure contact terminal

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