JPH0513887A - Semiconductor laser light emitting device - Google Patents

Abstract

PURPOSE:To obtain a semiconductor laser light emitting device having high productivity, a compact structure, and less double refraction and aging change by providing a sealing member formed of liquid transparent epoxy resin having excellent transparency, less double refraction and less aging change. CONSTITUTION:A semiconductor laser chip 1 is sealed with transparent epoxy resin 10 obtained by controlling compositions of the epoxy resin, acid anhydride curing agent, curing accelerator. Here, when 0.4-0.9 equivalent of acid anhydride curing agent to 100 pts.wt. of resin is used in the composition of the epoxy resin, its moisture resistance is improved, and its toughness is improved. Further, the double refraction is reduced, and its change is small even after it is preserved at a high temperature. When the accelerator is reduced to 0.2-1.0 pts.wt., its double refraction is reduced. Thus, a semiconductor laser light emitting device having high productivity and compact structure can be obtained by providing a sealing material formed of liquid transparent epoxy resin having excellent transparency, less double refraction and less aging change.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor laser light emitting device, and more particularly to a chip sealing structure.

[0002]

2. Description of the Related Art Conventionally, a cap package with a glass window as shown in FIG. 3 has been used as a method for sealing an optical semiconductor such as a semiconductor laser. As shown in the figure, a coupling 4 is provided on a base 5 on which the laser chip 1 is mounted, and a glass window 3 is provided above the laser chip 1.
Are arranged. The chip 1 is connected to the electrode terminal lead 7 by the wire 6. Further, 2 is a monitor photodiode for monitoring the operation of the laser chip 1, and 8 is a welding material such as glass for fixing the electrode terminal lead 7 to the base 5. However, with this method, the package cost is high and it is difficult to reduce the size, so that it cannot be applied to the improvement of the productivity of the semiconductor laser and the expansion of its application.

Therefore, by using a transparent epoxy resin as the encapsulating material, it becomes possible to integrally mold the light emitting element compactly with high productivity and compactness (see FIG. 2).
As a composition of the epoxy resin 9 for encapsulating an optical semiconductor, there is known a composition obtained by adding a curing accelerator such as an amine to an epoxy resin using an acid anhydride type curing agent. However, when sealing with this epoxy resin, in order to improve the curing speed,
If the amount of the curing accelerator is increased or the curing temperature is raised, the cured product will be colored, and there will be a problem as a sealing material for the optical semiconductor element. So, for example, Japanese Patent Fair 1-2
As disclosed in Japanese Patent No. 5487, a sulfur-containing phosphorus compound is used as a curing accelerator to prevent coloring during curing and to obtain a cured product excellent in transparency in a short time.

[0004]

The conventional semiconductor laser light emitting device is constructed as described above, and the range affected by the coloring of the sealing resin is in the wavelength range of 0.3 to 0.4 μm. In the case of semiconductor lasers, the wavelength is 1.3 to 1.5 microns for long wavelength semiconductor lasers for optical communication, and the wavelength is 0.7 to 0.8 microns for short wavelength semiconductor lasers for optical pickups such as CDs and optical video disks. Therefore, the problem due to the above coloring does not have much influence.

The problem is the effect of birefringence. That is, the semiconductor laser has a feature that it can collect light up to about the wavelength because the spectrum width is very narrow and the waves are aligned. However, since the oscillation light is linearly polarized light, it is greatly affected by birefringence. However, in order to seal the semiconductor laser device with resin, we develop a sealing resin material that not only maintains electrical characteristics and transparency but also has small optical anisotropy, that is, low birefringence and little change over time. There was a need.

The present invention has been made to solve the above problems, and provides a semiconductor laser light emitting device having a high-productivity, compact size, and a sealing resin member with little birefringence and little change over time. .

[0007]

A semiconductor laser light emitting device according to the present invention comprises a sealing member formed of a liquid transparent epoxy resin which is excellent in transparency, has low birefringence and has little change over time. is there.

[0008]

In the present invention, the semiconductor laser device is encapsulated by using the transparent epoxy resin having a low birefringence and little change over time, which is obtained by controlling the composition of the epoxy resin, the acid anhydride type curing agent, the curing accelerator and the like. Thus, a compact semiconductor laser light emitting device can be obtained with high productivity.

[0009]

Embodiments of the present invention will be described below.
FIG. 1 is a diagram showing a semiconductor laser light emitting device having a sealing member 10 constituted by using a transparent epoxy resin obtained by the examples described below.

DER332 (Bisphenol type epoxy resin manufactured by Dow Chemical Nippon 〓: epoxy equivalent is 170)
It has a chlorine concentration of 700 to 1100 ppm and a high purity with little ionic impurities. ) To HN5500E
(Hitachi Chemical Co., Ltd. acid anhydride curing agent) and tetraethylammonium bromide (hereinafter abbreviated as TEAB) are mixed and uniformly mixed to obtain a sealing resin composition. Table 1 shows the mixing amounts at that time. Then, the semiconductor laser device was sealed with this composition and cured under the conditions shown in Table 1.

[0011]

[Table 1]

The resin-sealed semiconductor laser light-emitting device thus obtained has a small birefringence and is stored at high temperature (125 ° C. ×
400 hr) Little change. In addition, heat cycle test (conditions: -40 ° C x 30 min to 125 ° C x 30 mi
n, 100 hr) and high temperature and high humidity test (conditions: 60 ° C, 95
% RH, 100 hr) and other environmental tests, there was almost no deterioration in surface accuracy that affects the wavefront distortion of the oscillated light, which was good.

The semiconductor laser device was sealed and cured using the compositions of Examples 1 to 6 and 1.0 equivalent of the curing agent in the specified range or more. As a result of the evaluation of the birefringence and the surface accuracy, it was observed that the birefringence was significantly changed at high temperature.

Next, AK601 (a diglycidyl ester type epoxy resin manufactured by Nippon Kayaku Co., Ltd.) is blended with HN5500E and TEAB and uniformly mixed to obtain a sealing resin composition. The mixing amount is shown in Table 2. Then, the semiconductor laser device was sealed with this composition and cured under the conditions shown in Table 2.

[0015]

[Table 2]

An environmental test and the like were performed on this sealed product in the same manner as in Examples 1 to 6, but there was no problem in birefringence and surface accuracy.

Next, CY179 (a cycloaliphatic epoxy resin manufactured by Nagase Ciba Co., Ltd.) was mixed with HN5500E and TEAB.
(Or lead octylate) is mixed and uniformly mixed to obtain a sealing resin composition. The mixing amount is shown in Table 3. Next, the semiconductor laser device was sealed with this composition and cured under the conditions shown in Table 3.

[0018]

[Table 3]

Environmental tests and the like were performed on this sealed product in the same manner as in Examples 1 to 6, but there was no problem in birefringence and surface accuracy.

Further, HN5500E and TEAB are blended with a mixed epoxy resin of AK601 and CY179 and uniformly mixed to obtain a sealing resin composition. The mixing amount is shown in Table 4. Next, the semiconductor laser device was sealed with this composition and cured under the conditions shown in Table 4.

[0021]

[Table 4]

Environmental tests and the like were performed on this sealed product in the same manner as in Examples 1 to 6, but there was no problem in birefringence and surface accuracy.

As described above, according to this example, the epoxy resin composition was used in an amount of 0.4 to 0.9 equivalents, which is less than the usual amount, of the acid anhydride-based curing agent based on 100 parts by weight of the resin. When the used amount of is decreased, the ether bond is increased, so that the moisture resistance is improved, and the toughness is improved due to the flexibility. Further, the birefringence becomes small, and the change is small even after storage at high temperature. As the curing accelerator, a quaternary amine salt or an octyl acid salt is used, and the amount used is as small as 0.2 to 1.0 part by weight. Curing by slowing the reaction rate is also effective in reducing birefringence. However, if the amount of the accelerating agent is too small, the curing acceleration effect becomes poor.

As the resin to be used, three kinds of epoxy resins of bisphenol type, glycidyl ester type and cycloaliphatic are preferable because they have excellent transparency. Also,
A mixed system of these resins or a mixed system with another epoxy resin is also possible.

Regarding the curing conditions of the above resin, 1
Curing at a low temperature of 20 ° C. or lower is effective in reducing birefringence. However, if the curing is carried out only at a low temperature, the curing takes a long time and the curing tends to be insufficient. Therefore, it is preferable to carry out the step curing. That is, 100 in the first stage
~ 150 ° C for 1-5 hours, 2nd stage 150-180
It is preferable to carry out at 1 to 4 hours. Coloring occurs when cured at high temperature for a long time.

In the semiconductor laser device encapsulating resin, in addition to the above epoxy resin, acid anhydride-based curing agent, and curing accelerator, a diluent, a flexibilizer, a coloring agent, a modifier, and a It is possible to add conventionally known additives such as a release agent, a discoloration preventing agent and a deterioration preventing agent.

The above-mentioned encapsulating resin composition can be mixed at room temperature or under heating, and the obtained homogeneous mixture is used for encapsulating a semiconductor laser element by casting or transfer type to form a semiconductor laser light-emitting device. Can be obtained.

[0028]

As described above, according to the semiconductor laser light emitting device of the present invention, it is provided with the sealing member formed of the liquid transparent epoxy resin which is excellent in transparency, has low birefringence and has little change with time. Therefore, there is an effect that a compact semiconductor laser light emitting device can be obtained with high productivity.

[Brief description of drawings]

FIG. 1 is a cross-sectional view of a resin-sealed semiconductor laser light emitting device of the present invention.

FIG. 2 is a sectional view of a conventional resin-sealed semiconductor laser light emitting element.

FIG. 3 is a cross-sectional view of a semiconductor laser light emitting device sealed with a conventional cap package with a glass window.

[Explanation of symbols] 1 laser chip 3 glass windows 4 cap ring 5,5 'base 6 wires 7 electrode terminal lead 8 Welding material 10 Sealing member (transparent epoxy resin)

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁵ Identification code Internal reference number FI Technical indication location H01L 33/00 N 8934-4M H01S 3/025 7630-4M H01S 3/02 S (72) Inventor Masakazu Murayama 8-1-1 Tsukaguchihonmachi, Amagasaki-shi, Hyogo Sanryo Electric Co., Ltd.

Claims (6)

[Claims] 1. A semiconductor laser light-emitting device in which a semiconductor laser element mounted on a base is sealed by using a sealing member made of resin, wherein the sealing member is excellent in transparency. A semiconductor laser light emitting device characterized by using a liquid transparent epoxy resin having low birefringence and little change over time. 2. The semiconductor laser light emitting device according to claim 1, wherein the sealing member uses a high-purity bisphenol type epoxy resin as a resin, and contains an acid anhydride-based curing agent and a curing accelerator. A semiconductor laser light-emitting device characterized by being obtained from a resin composition. 3. The semiconductor laser light emitting device according to claim 1, wherein the sealing member uses a diglycidyl ester type epoxy resin of hexahydrophthalic anhydride as a resin, in which an acid anhydride curing agent and a curing accelerator are used. A semiconductor laser light-emitting device, which is obtained from a resin composition containing: 4. The semiconductor laser light emitting device according to claim 1, wherein the sealing member uses a cyclic aliphatic epoxy resin as a resin, and contains an acid anhydride curing agent and a curing accelerator. A semiconductor laser light-emitting device, which is obtained from the composition. 5. The semiconductor laser light emitting device according to claim 1, wherein the sealing member uses a mixed resin of a diglycidyl ester type epoxy resin and a cycloaliphatic epoxy resin as a resin, and an acid anhydride curing A semiconductor laser light-emitting device characterized by being obtained from a resin composition containing an agent and a curing accelerator. 6. The semiconductor laser light emitting device according to claim 2, wherein the resin composition comprises 0.4 to 0.9 equivalents of an acid anhydride curing agent with respect to 100 parts by weight of the resin. And 0.2 to 1.0 part by weight of a curing accelerator are contained in the semiconductor laser light emitting device.