JPH0513743A - Glass board for linear image sensor - Google Patents

Abstract

PURPOSE:To increase the number of sensors which can be manufactured from a fixed-sized glass board and protect semiconductor devices formed from any possible damage by specifying the thickness of the glass board and the width in the sub-scanning direction when manufacturing a plurality of linear image sensors of long form simultaneously. CONSTITUTION:A 0.3 to 1.1mm thick glass board 13 is used. The length of the board is set to be longer than that of a linear image sensor 10 in the main scanning direction while the width of the board is set to be larger than a multiplication of the manufacturing number of the sensors and the sub-scanning directional width of the linear image sensors 10 which range from 0 to 4 and 0mm. When a plurality of image sensors 10 are formed on the glass board 13 with a large area and bent and broken, centering on a scribe line with a diamond cutter or the like applied to the surface of the board, the glass board is arranged to be broken sharply linearly. The discreetly separated long and thin glass board 12 of the image sensors 10 is arranged not to be broken into plurally on the way.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a glass substrate used for a linear image sensor, and more particularly to a glass substrate for a linear image sensor used in facsimiles, image scanners, digital copying machines, electronic blackboards and the like.

[0002]

2. Description of the Related Art A linear image sensor is an interlayer insulating film for arranging a plurality of semiconductor elements composed of a lower electrode, a semiconductor layer and an upper electrode in a straight line on a glass substrate and insulating these semiconductor elements by covering them. And a wiring arranged via this interlayer insulating film. The size of semiconductor elements, wirings, and the like constituting this linear image sensor is in the unit of μm, and a photolithography method is usually used for fine processing. For this reason,
In order to manufacture a linear image sensor, it is necessary to repeat the steps of film formation, photoresist coating, photomask positioning, exposure, and etching. To reduce the manufacturing cost, a large number of linear image sensors can be manufactured at one time. Most preferably, it is manufactured.

Therefore, after a plurality of linear image sensors are simultaneously formed using a large area glass substrate, the large area glass substrate is cut by a dicer used for cutting a silicon wafer or the like to obtain individual linear images. Manufactures sensors. Here, the glass substrate has a standard size of 1.1 mm and is inexpensive, easy to purchase and easy to handle, and as shown in FIG. The resin film 3 is attached to the back surface side with the adhesive 4, and the glass substrate 2 is sequentially cut by the rotary blade 5 of the dicer while leaving the resin film 3. As a result, the linear image sensor 6 is manufactured so that the glass substrate 2 of the linear image sensor 6 cut by the dicer does not get caught in the rotary blade 5 of the dicer or is dropped and damaged.

[0004]

By the way, as shown in FIG. 6, a cutting margin A is required for cutting the glass substrate 2 by a dicer, and the cutting margin A is usually 0.2 mm or more. The cutting margin A corresponds to 10% or more when the width of the linear image sensor 6 in the sub-scanning direction is 2 mm, and limits the number of linear image sensors 6 that can be manufactured from the glass substrate 2 having a certain size. Was there. Further, since the chipping B by the rotary blade 5 occurs on both sides of the cutting line by the dicer, the corner end face is not sharply formed,
When the manufactured linear image sensor 6 was incorporated into a module, there was a problem that alignment was difficult. Moreover, in consideration of the chipping B, a margin is required for the width of the glass substrate 2 in the sub-scanning direction with respect to the effective area where the semiconductor element 1 and the like are formed. The number of linear image sensors 6 that can be manufactured has been reduced.

Further, the cutting of the glass substrate 2 by the dicer takes a long time, and the productivity cannot be improved. Further, the cutting length of the glass substrate 2 varies depending on the reading size of the linear image sensor 6, but is usually about 200 to 340 mm, and a long dicer is required to cut such a long distance. But,
This long dicer is difficult to obtain because of its special use and is expensive. In addition, the dicing blade 5 needs to be replaced, which causes a high running cost.

Further, when the glass substrate 2 is cut by a dicer, a resin film 3 is attached to the back surface of the glass substrate 2 so that the cut glass substrate 2 is not caught by a rotary blade. It is necessary to peel off the resin film 3. Therefore, various treatments such as immersion in a solvent are required, and this treatment damages the semiconductor element 1 and the like formed on the glass substrate 2. Therefore,
The present inventors have conducted intensive studies to solve these problems, and as a result, reached the present invention.

[0007]

The gist of a glass substrate of a linear image sensor according to the present invention is that a semiconductor element including a lower electrode, a semiconductor layer and an upper electrode is provided on the glass substrate, and the semiconductor element is In the glass substrate of the linear image sensor configured to include an interlayer insulating film that covers and insulates, and a wiring arranged through the interlayer insulating film,
The thickness is 0.3 to 1.1 mm, preferably 0.4 to 0.8 mm, and the width in the sub-scanning direction is 1.0 to 4.0 mm.

In the glass substrate of such a linear image sensor, the length of the glass substrate in the main scanning direction is 20.
0 to 340 mm, the width in the sub-scanning direction is 1.9 to 3.5
mm and the thickness is 0.5 to 0.75 mm.

Further, in the glass substrate of such a linear image sensor, the ratio of the length in the main scanning direction to the width in the sub scanning direction of the glass substrate is about 50 or more, and the ratio of the width to the thickness in the sub scanning direction is almost equal. It is 0.9 or more, preferably 1.8 or more.

[0010]

The glass substrate of the linear image sensor of the present invention has a thickness of 0.3 to 1.1 mm, preferably 0.4 to 1.1 mm.
It is 0.8 mm, and a scratch-shaped scribe line is attached to the surface of the glass substrate by a diamond cutter or the like, and both side portions of the scribe line are fixed and folded to manufacture individual linear image sensors. That is, the present inventors set the thickness of the glass substrate to 0.
3 to 1.1 mm, preferably 0.4 to 0.8 mm, to damage the semiconductor element and the like formed on the glass substrate even if the width in the sub-scanning direction is 1.0 to 4.0 mm They found that they could be split without breaking. Folding a glass substrate consists of a step of forming a scribe line on the surface and a step of bending the scribe line at the boundary to break the glass substrate.Each step is short, and the cutting line is along the scribe line. Since it is sharp and sharp, it is easy to align when assembling into a module. Furthermore, no cutting margin is required for folding along the scribe line, wide chipping does not occur due to scribing with a diamond cutter, and almost no margin is required for the width of the glass substrate in the sub-scanning direction. Therefore, it is possible to increase the number of linear image sensors that can be manufactured from a glass substrate having a certain size. Furthermore, since it is not necessary to attach a resin film or the like to the back surface of the glass substrate, it is not necessary to peel off the resin film, and the formed semiconductor element or the like is not damaged.

In the glass substrate of such a linear image sensor, the length of the glass substrate in the main scanning direction is 20.
0 to 340 mm, width in the sub-scanning direction is 1.9 to 3.5 mm
And a thickness of 0.5 to 0.75 mm, or further, the ratio of the length of the glass substrate in the main scanning direction to the width in the sub scanning direction is about 50 or more, and the width in the sub scanning direction. And the thickness ratio is approximately 0.9 or more, preferably 1.8.
By the above, even if the length in the main scanning direction is long and the width in the sub scanning direction is narrow, it is possible to stably fold the glass substrate without damaging the formed semiconductor element or the like. You can

[0012]

Embodiments of the glass substrate of the linear image sensor according to the present invention will now be described in detail with reference to the drawings. 2 (a) and 2 (b), reference numeral 10 is an example of a linear image sensor manufactured according to the present invention. The linear image sensor 10 is roughly composed of a photodiode 14 as a photoelectric conversion element on a glass substrate 12. A plurality of blocking diodes 16 as switching elements that prevent crosstalk between the photodiodes 14 are formed in a one-dimensional manner. These blocking diodes 16 are connected to each other by a common electrode 18 that is common for every fixed number, and this common electrode 18, a certain number of blocking diodes 16 connected to this common electrode 18, and the blocking diodes 16 correspond to each other. The block 20 is configured with a fixed number of photodiodes 14 as one unit. Further, a matrix wiring 22 is formed on the glass substrate 12, and the photodiodes 14 located at the same relative position in each block 20 are commonly connected by the matrix wiring 22. Further, the photodiode 14 and the corresponding blocking diode 16 are connected in series with opposite polarities by the connection electrode 24, and the image sensor 10 is constituted by the whole of them.

To manufacture this image sensor 10,
As shown in FIG. 1 (b), a large area glass substrate 13 is first selected. The large-area glass substrate 13 has a thickness of 0.
3 to 1.1 mm, preferably 0.4 to 0.8 mm, more preferably 0.5 to 0.75 mm, and the length of the glass substrate 13 is the length of the linear image sensor 10 in the main scanning direction ( For example, the width of the linear image sensor 10 is longer than the width (1.0 to 4.0 mm, for example, 2.0 mm) of the linear image sensor 10 by the number of manufactured sensors 10. It is set large. That is, the length of the glass substrate 13 differs depending on whether the manufactured linear image sensor 10 is for A4 size, B4 size, A3 size, etc., and is selected according to the size to be manufactured. In addition, the width of the glass substrate 13 is usually constant corresponding to the length, and the linear image sensor 10 is manufactured in consideration of the maximum width in the sub-scanning direction of the components such as semiconductor elements and wiring of the manufactured linear image sensor 10. The width of the glass substrate 12 is set, and the number of linear image sensors 10 manufactured based on the width is set.

Next, as shown in FIGS. 2 (a) and 2 (b), after forming a metal film on the large area glass substrate 13 (12),
The metal film is patterned by a photolithography method or the like to form a common electrode 18 for connecting a fixed number of blocking diodes 16 and each photodiode 14.
The lower electrode 26 and the electrode line 28 which is drawn from the lower electrode 26 and connected to the matrix wiring 22 are formed. The material of the metal film for forming the lower electrode 26 having the common electrode 18 and the electrode line 28 is a non-diffusive metal material in which metal atoms are difficult to diffuse into a semiconductor such as an amorphous silicon semiconductor, More preferably, a metal material such as chrome, which has good adhesion to the glass substrate 13, is used.

Next, the semiconductor portions 30 and 32 of amorphous silicon type semiconductor, which constitute the photodiode 14 and the blocking diode 16, are formed on the lower electrode 26 and the common electrode 18, respectively. This semiconductor part 30, 3
2 is preferably an amorphous silicon semiconductor having an n-type semiconductor layer, and particularly preferably a pin structure. Further, in the pin structure amorphous silicon-based semiconductor, it is particularly preferable that the p-type semiconductor layer contains carbon C. Furthermore, the semiconductor parts 30, 3 that have been deposited
A transparent electrode 34 made of ITO or the like is provided as an upper electrode on 2
36 is deposited. Semiconductor parts 30, 32 and transparent electrode 3
4, 36 are formed by sequentially stacking a semiconductor film and a transparent electrode film thereon and then patterning them by a photolithography method or the like. The semiconductor portions 30 and 32 and the transparent electrodes 34 and 36 may be patterned and deposited by a mask method.

Next, the photodiode 14 and the blocking diode 16 are covered with a transparent interlayer insulating film 38 made of SiOx or the like to insulate the photodiode 14 and the blocking diode 16 and the lower electrode 26 of the photodiode 14. At the same time, the electrode wire 28 that is drawn from is also insulated. Then, after depositing a metal film on the transparent interlayer insulating film 38, the metal film is photoetched to connect the photodiode 14 and the blocking diode 16 to each other.
And the matrix wiring 22 in the longitudinal direction of the glass substrate 13.
Are simultaneously patterned and formed. The connection electrode 24 is connected to the transparent electrode 34 of the photodiode 14 via the contact hole 40, and also connected to the transparent electrode 36 of the blocking diode 16 via the contact hole 42. The connection electrode 24 blocks the photodiode 14 from the blocking. The diode 16 is connected in series with the opposite polarity. Here, the connection electrode 24 is formed so as to cover at least the transparent electrode 36 of the blocking diode 16, and shields the blocking diode 16 so that it cannot function as a photoelectric conversion element.
On the other hand, the matrix wiring 22 formed on the transparent interlayer insulating film 38 is electrically connected through the contact hole 44 provided at the tip of the electrode wire 28 drawn from the lower electrode 26 of the photodiode 14. There is.

Further, at the same time as forming the connection electrodes 24 and the matrix wiring 22 on the electrode pad portion integrally formed with the common electrode 18 for connecting to an external device, the metal film is deposited, It is preferable to form the extraction electrode 46. Here, the metal material used for forming the connection electrodes 24, the matrix wiring 22, etc., is applied to the transparent electrodes 34, 36 of the photodiode 14 and the blocking diode 16 via the contact holes 40, 42, respectively. Atoms of the metal material are transparent electrodes 3
4, 36 and the semiconductor parts 30, 32 made of a material that cannot diffuse, for example, chromium, titanium, nickel or the like is used. The connecting electrode 2 is made only of such a non-diffusive metal material.
4 or the matrix wiring 22 may be formed, but two or more layers in which an electrically conductive material such as aluminum is deposited on the connection electrode 24 and the matrix wiring 22 made of the non-diffusive metal material. It may be formed by a structure.

Further, on the photodiode 14, the blocking diode 16, the matrix wiring 22 and the like formed on the glass substrate 13, the entire area except the extraction electrode 46 of the common electrode 18 and the extraction electrode portion of the matrix wiring 22 is formed. They are protected by being covered with an insulating protective film 48. The insulating protective film 48 is made of an inorganic insulating material such as SiNx or silicon nitride, or an organic insulating material such as polyimide resin, epoxy resin, or phenol resin, or a combination of these inorganic insulating material and organic insulating material. Things are used.

As shown in FIG. 1B, a plurality of image sensors 10 having the above structure are formed on a large-area glass substrate 13, and the glass substrates 13 are cut along a scribe line 50. The individual linear image sensor 10 shown in FIG. 3A is manufactured. As shown in FIG. 3, the scribe line 50 is scribed by applying a diamond cutter 52 having a sharp tip to the surface of the glass substrate 13 to move the scribe line 50 linearly. After that, the glass substrates 13 on both sides of the scribe line 50 are sandwiched.
Is fixed with a jig or the like, and the scribe line 50 is bent and broken. The thickness of the glass substrate 13 is 0.3 to
Since the width is 1.1 mm, preferably 0.4 to 0.8 mm, even if the width of the glass substrate 13 in the sub-scanning direction is 1.0 to 4.0 mm, the glass substrate 13 is linear along the scribe line 50. Further, the glass substrate 12 of the long and thin linear image sensor 10 which is sharply cracked and individually separated does not break into plural pieces on the way. Further, since the bending load of the glass substrate 13 does not act on the glass substrate 13, the photodiode 14, the blocking diode 16, or the matrix wiring 22 formed on the glass substrate 13 is not damaged.

In the obtained linear image sensor 10, the cutting line of the glass substrate 12 is sharp, so that when it is incorporated in a module or the like, the alignment is easy and the workability is improved. In particular, since no cutting allowance is required when the glass substrate 13 having a large area is split, it is possible to increase the number of linear image sensors 10 that can be manufactured from the glass substrate 13 having a certain size without waste. . Further, by making the thickness of the glass substrate 13 thin, even if the width in the sub-scanning direction is made thin, it is possible to make a fold and to downsize the sensor.

The glass substrate 13 can be split relatively easily when the length in the main scanning direction is short and the width in the sub scanning direction is wide, but the length is 20 from A4 size to A3 size.
When the width of the linear image sensor 10 in the sub-scanning direction is 0 to 340 mm and 1.9 to 3.5 mm, the thickness of the glass substrate 13 is selected to be 0.5 to 0.75 mm. Accurate folds can be made along the scribe line 50. Further, the folding of the glass substrate 13 is such that the ratio of the length in the main scanning direction to the width in the sub scanning direction is about 50 or more, and the ratio of the width to thickness in the sub scanning direction is about 0.9 or more. When it is 8 or more, along the scribe line 50 without damaging the semiconductor elements and wirings formed on the glass substrate 13 and without breaking the separated glass substrate 12 of the linear image sensor 10. It was confirmed that the folds could be made accurately.

The present inventors have a thickness of 0.7 manufactured by Corning.
The linear image sensor 10 shown in FIG. 2 was manufactured using a glass substrate (7059) of mm. The glass substrate 13 has a length of 250 mm in the main scanning direction and a width of 152 mm in the sub scanning direction.
On the other hand, the size of the glass substrate 12 of the linear image sensor 10 is 230 mm in length in the main scanning direction and 2.0 mm in width in the sub scanning direction, and 76 linear image sensors 10 are arranged on the glass substrate 13. 7 by forming and folding
Six linear image sensors 10 were obtained. In the case of the conventional dicing method, a cutting margin is required even under the same conditions, and therefore the number of linear image sensors 10 that can be formed on the glass substrate 13 was 63.

Although the embodiments of the present invention have been described in detail above, the present invention can be implemented in other modes. For example, as shown in FIG. 4, in the linear image sensor 53 according to the present invention, the lower electrode 54 formed on the glass substrate 12 forms a connection electrode that connects the photodiode 56 and the blocking diode 58 in series with opposite polarities. Of the wiring electrode 60 on the upper electrodes 57, 59 side of the
Alternatively, the upper extraction electrode 62 may be provided.

Although the linear image sensor having the two semiconductor element groups of the photodiode and the blocking diode has been described in the above embodiments, the present invention can be applied to the linear image sensor composed of a single semiconductor element group. It is not limited in any way. Further, the semiconductor layer is not limited to the pin type amorphous silicon semiconductor layer, but may be amorphous silicon a-Si, hydrogenated amorphous silicon a-Si: H, hydrogenated amorphous silicon carbide a-SIC: H, amorphous silicon. In addition to nitrides, amorphous or microcrystalline amorphous silicon semiconductors made of alloys of silicon with other elements such as carbon, germanium, tin, etc.
It may be a semiconductor layer composed of an in-type, nip-type, ni-type, pn-type, MIS-type, heterojunction-type, homojunction-type, Schottky barrier-type, or a combination of these types. GaAs and CdS
It may be a linear image sensor composed of a semiconductor element such as a system.

Further, in addition to the glass substrate as the insulating substrate, for example, a substrate obtained by depositing silicon oxide, silicon nitride, silicon oxynalide or the like on a metal substrate for insulation, or a flexible substrate such as a polyimide film, Is also good. Further, as the material of the lower electrode, titanium, nickel or the like may be used in addition to chromium, and further, silicon oxide, as a material of the interlayer insulating film or the insulating protective film,
It may be silicon nitride, silicon oxynalide, or the like, and is not limited to any of them. Further, a dry etching method such as a reactive ion etching method is the most preferable for patterning the interlayer insulating film, but it goes without saying that a wet etching method may be used if necessary. In addition, the present invention can be carried out in a mode in which various improvements, modifications and variations are added based on the knowledge of those skilled in the art without departing from the spirit of the present invention.

[0026]

The glass substrate of the linear image sensor according to the present invention has a thickness of 0.3 to 1.1 mm, preferably 0.1.
Since the width of 4 to 0.8 mm is used, even if the width in the sub-scanning direction is as small as 1.0 to 4.0 mm, a scribe line is attached to the surface of the glass substrate by a diamond cutter or the like to fold it. Therefore, the cutting line can be cut accurately and sharply without damaging the semiconductor element, the wiring, or the like formed on the glass substrate. Therefore, when modularizing the sensor,
Positioning is possible by the edge surface of the glass substrate of the sensor,
Positioning becomes easy.

Further, since a scribe line can be attached and folded, no cutting margin is required, and since there is no chipping by a cutting blade, a large number of sensors can be manufactured from a glass substrate of a certain size. Therefore, the manufacturing cost of the sensor can be significantly reduced. Moreover, since it is not necessary to attach a resin film or the like to the back surface of the glass substrate, there is no process for peeling it off from the glass substrate, and the semiconductor element and the like due to the process are not damaged. Furthermore, the process of attaching the scribe line and the process of splitting are all that is required, and the productivity is greatly improved. Further, since an expensive dicer is not required, running cost can be reduced, and cooling water or the like is not used for cutting, so that a semiconductor element or the like is not adversely affected.

Further, in the glass substrate of such a linear image sensor, the length of the glass substrate in the main scanning direction is 20.
0 to 340 mm, width in the sub-scanning direction is 1.9 to 3.5 mm
And a thickness of 0.5 to 0.75 mm, or further, the ratio of the length of the glass substrate in the main scanning direction to the width in the sub scanning direction is about 50 or more, and the width in the sub scanning direction. And the thickness ratio is approximately 0.9 or more, preferably 1.8.
By the above, even if the length in the main scanning direction is long and the width in the sub scanning direction is narrow, it is possible to stably fold the glass substrate without damaging the formed semiconductor element or the like. The same effect as described above can be obtained. Moreover, since the width in the sub-scanning direction can be reduced, the linear image sensor can be further downsized.

[Brief description of drawings]

1A and 1B are views for explaining a glass substrate of a linear image sensor according to the present invention, FIG. 1A is a plan view showing the glass substrate of the linear image sensor, and FIG. 1B is a diagram showing the linear image sensor. It is a top view which shows the large-area glass substrate for manufacturing.

2A and 2B are diagrams showing an example of a semiconductor device to which the present invention is applied. FIG. 2A is a cross-sectional explanatory view of a main part and FIG. 2B is a plan view of the main part.

FIG. 3 is a perspective view of an essential part showing a method for cutting a glass substrate according to the present invention.

FIG. 4 is an explanatory cross-sectional view of main parts showing another example of the linear image sensor to which the present invention is applied.

FIG. 5 is a front view of a main part for explaining a defect in a conventional method of manufacturing a linear image sensor.

FIG. 6 is an enlarged cutaway front view of a main part for explaining a problem in a conventional glass substrate cutting method of a linear image sensor.

[Explanation of symbols]

10,53; Linear image sensor 12; glass substrate 13; Large area glass substrate 18; common electrode 22; Matrix wiring 24; Connection electrode 26, 54; lower electrode 30, 32; semiconductor layer 34, 36, 57, 59; transparent electrode (upper electrode) 38, 64; transparent interlayer insulating film (interlayer insulating film) 60; Wiring electrode

Claims (3)

[Claims] 1. A semiconductor element comprising a lower electrode, a semiconductor layer, and an upper electrode on a glass substrate, an interlayer insulating film covering and insulating the semiconductor element, and a wiring arranged via the interlayer insulating film. In the glass substrate of the linear image sensor configured to have a thickness of 0.3 to 1.1 mm, preferably 0.4 to 0.8 mm, and a width in the sub-scanning direction of 1.0 to
A glass substrate for a linear image sensor, which is 4.0 mm. 2. The length of the glass substrate in the main scanning direction is 2
The width in the sub-scanning direction is 1.9 to 3.
The glass substrate for a linear image sensor according to claim 1, wherein the glass substrate has a thickness of 5 mm and a thickness of 0.5 to 0.75 mm. 3. The ratio of the length in the main scanning direction to the width in the sub scanning direction of the glass substrate is about 50 or more, and the ratio of the width to the thickness in the sub scanning direction is about 0.9 or more, preferably 1. It is 8 or more, The glass substrate of the linear image sensor of Claim 1 or 2 characterized by the above-mentioned.