JPH04367236A - Semiconductor device and its manufacture - Google Patents

Abstract

PURPOSE:To provide a semiconductor device wherein a leak is not caused and an electrode is not corroded in a semiconductor element part and an electrode part and a quality is stable even under high temperature and high humidity in the semiconductor device wherein a connection electrode and an insulating protective film are provided on an insulating substrate via the semiconductor element and an interlayer insulating film. CONSTITUTION:Only an electrode pad part 28 which is required for external connection use is etched and removed from an insulating protective film 50 which has been applied to an insulating substrate 12. When, regarding an interlayer insulating film 34, contact parts 28, 38, 40, 42 which are required for external connection use are formed by an etching operation, only the contact parts are etched. The insulating protective film 50 and/or the interlayer insulating film 34 are formed in such a way that the outer circumferential contour part of the electrode pad part 28 is covered.

Description

[Detailed description of the invention]

0001

[Field of Industrial Application] The present invention relates to a semiconductor device and a method for manufacturing the same, and in particular to a facsimile device, an image reader,
The present invention relates to a semiconductor device used in a digital scanner, etc., and a method for manufacturing the same.

0002

2. Description of the Related Art Semiconductor devices are provided with various structures, such as photodiodes 102 formed one-dimensionally in large numbers on a glass substrate 100, as shown in FIGS. Individual photodiodes 102
The connection electrode 106 is connected via the interlayer insulating film 104 corresponding to
A blocking diode 108 connected in series with opposite polarity, a photodiode 102 divided into blocks of a certain number, and a blocking diode 1
08, a matrix wiring 112 for reading signals from the driven photodiodes 102, and an insulating protective film 113 for covering, insulating, and protecting these photodiodes 102, etc. A semiconductor device 114 equipped with
is provided. Such a semiconductor device 114 is shown in FIG.
As shown in FIG. 9, a plurality of semiconductor devices 114 are simultaneously formed on a large-area glass substrate 116, and then, as shown in FIG. 9, they are individually cut out and manufactured.

In this method of manufacturing a semiconductor device 114, as shown in FIGS. 10(a) and 10(b), photodiodes 102 and blocking diodes 108 are arranged one-dimensionally in multiple rows on a large-area glass substrate 116.
After forming these, an interlayer insulating film 104 is deposited over the entire area of the glass substrate 116, and the interlayer insulating film 104 is further etched by reactive ion etching (RIE).
By this method, a plurality of contact holes 118 , an electrode pad section 120 for signal input/output, and an outer peripheral section 122 of a semiconductor device 114 including the electrode pad section 120 are formed.
(See FIG. 9), and the outer peripheral portion 124 (see FIG. 8) of the glass substrate 116 that does not constitute the semiconductor device 114 was also removed. After that, as shown in FIG.
Contact hole 118 formed by removing 4
The connection electrode 106 and the matrix wiring 112 were formed in the electrode pad part 120, and the upper lead-out electrode 126 was formed in the electrode pad part 120. Next, these semiconductor devices 11
After depositing an insulating protective film 113 over the entire area of the glass substrate 116 on which the components No. 4 are formed, the insulating protective film 113 is coated on the outer periphery of the glass substrate 116 including the electrode pad portion 120 by reactive ion etching. Part 12
2, the semiconductor device 11 shown in FIG.
4 was manufactured.

0004

[Problems to be Solved by the Invention] Such a semiconductor device 11
Since the distance between the outer peripheral edge of the insulating protective film 113 formed on the insulating protective film 113 and the internal semiconductor elements 102, 108 or the matrix wiring 112 is short, the insulating protective film 113 is
Moisture easily enters from the outer periphery of the semiconductor element 102, 108 and the matrix wiring 1.
There were problems such as leakage occurring in the 12 parts and corrosion of metal wiring electrodes. Furthermore, since the boundary with the glass substrate 116 on which the electrode pad section 120 for signal input/output is attached is exposed to the atmosphere, the electrode pad section 120
and the interface between the glass substrate 116 and the electrode pad portion 120
There was a problem in that moisture easily entered the interface between the electrode pad 106 and the upper lead electrode 106 deposited thereon, corroding the electrode pad portion 120.

[0005] Also, the portions of the insulating protective film 113 deposited on the top of the semiconductor device 114 that are removed by reactive ion etching (RIE) are on the glass substrate 116 except for the electrode pad portions 120. It is applied directly. The insulating protective film 113 is made of SiOx, SiNx, etc. whose main component is Si, and since the glass substrate 116 is also mainly composed of Si, the insulating protective film 1
The dry etching gas for removing 13 also reacts with the Si of the glass substrate 116, causing a large amount of the components of the glass substrate 116 to be scattered. The components of the glass substrate 116 that were scattered in large quantities in this way
The electrode pad portion 120 (106) from which the insulating protective film 113 was removed is finely re-deposited. the result,
There have been problems in that wire bonding performance in the electrode pad portion 120 is degraded and connection resistance is increased.

[0006] Therefore, the inventor of the present invention has conducted extensive research to solve these problems, and as a result, has arrived at the present invention.

[0007]

[Means for Solving the Problems] The gist of the semiconductor device according to the present invention is to provide a semiconductor element including a lower electrode, a semiconductor layer, and an upper electrode laminated on an insulating substrate, and a semiconductor element that covers at least the semiconductor element. In a semiconductor device configured with an interlayer insulating film, a connection electrode disposed through the interlayer insulating film, and an insulating protective film covering components on the insulating substrate, the insulating protective film is used for signal input. The reason is that it is formed in the entire area on the insulating substrate except for the output electrode pad portion.

Further, in such a semiconductor device, the interlayer insulating film is formed over the entire region of the insulating substrate except for a contact portion necessary for external connection.

Furthermore, in this semiconductor device, at least an outer peripheral contour of the electrode pad portion is covered with the insulating protective film.

Further, in this semiconductor device, at least an outer peripheral contour of an electrode pad portion of the contact portion that is integrally taken out from the lower electrode of the semiconductor element is covered with the interlayer insulating film.

Next, the gist of the method for manufacturing a semiconductor device according to the present invention is to provide a semiconductor element comprising a lower electrode, a semiconductor layer, and an upper electrode laminated on an insulating substrate; In a method for manufacturing a semiconductor device comprising an interlayer insulating film, a connection electrode disposed through the interlayer insulating film, and an insulating protective film covering components on the insulating substrate, the insulating protective film After coating the entire area on the insulating substrate, only the electrode pad portion for signal input/output of the insulating protective film is removed.

[0012] Furthermore, in this method of manufacturing a semiconductor device, after the interlayer insulating film is deposited on the entire area on the insulating substrate, only a contact portion necessary for external connection is removed from the interlayer insulating film. That's what I did.

[0013]

In the semiconductor device of the present invention, the insulating protective film is removed only from the electrode pad portion necessary for external connection, and the insulating protective film is formed on the entire remaining area of the insulating substrate. Therefore, the distance between the boundary, that is, the edge of the insulating substrate on which the insulating protective film is applied, and the semiconductor element part or matrix wiring part inside the insulating protective film is ensured to be sufficiently long, and the distance between the insulating protective film and the insulating substrate is kept sufficiently long. Moisture rarely enters the interior through the interface, and leaks or corrosion of the metal electrodes are unlikely.

[0014] In addition, a semiconductor device having such a configuration is manufactured by etching away only the electrode pad portion of the insulating protective film deposited to cover the semiconductor element, etc., so that it is possible to remove the insulating protective film from the glass substrate etc. There is no need to etch the insulating substrate itself and scatter the substrate components. Therefore, the scattered components will not re-adhere to the electrode pad portion, and wire bonding properties will not deteriorate or connection resistance will not increase.

Furthermore, in this semiconductor device and its manufacturing method, by configuring the interlayer insulating film deposited on the insulating substrate so that only the contact portions such as electrode pad portions and contact holes are removed by etching, The insulating substrate itself is not etched and its substrate components are not scattered. Therefore, the scattered components will not re-deposit on the electrode parts, etc., and after the interlayer insulating film is deposited, the upper lead-out electrodes, connection electrodes, etc. that are formed will be firmly attached to the lower electrodes and the upper electrodes of the semiconductor element. There is no increase in connection resistance or deterioration of wire bonding properties. Furthermore, since the surface of the insulating substrate is not etched, the surface does not become cloudy, making it easier to position the photomask in the next step, and making it possible to manufacture semiconductor devices of higher quality. Furthermore, since only the contact portions that require etching are not etched, the etching atmosphere can be kept almost constant at all times, and the interlayer insulating film can be etched almost uniformly and quickly.

Furthermore, by forming the outer circumferential contour of the upper lead electrode in the electrode pad portion to be covered with an insulating protective film, the moisture resistance of the outer circumferential contour of the electrode pad portion is improved, and leakage and corrosion are prevented. It can be prevented.

[0017]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, embodiments of a semiconductor device and its manufacturing method according to the present invention will be described in detail with reference to the drawings. Figure 1 (a
) As shown in (b), the semiconductor device 10 includes a plurality of photodiodes 14 and blocking diodes 16, each of which is a semiconductor element, formed one-dimensionally on an insulating substrate 12 made of glass or the like. The photodiode 14 and the blocking diode 16 are connected in series with opposite polarity, and one blocking diode 1
On the 6 side, a common electrode 18 is provided which is divided into a fixed number of blocking diodes 16 and drives the blocking diodes 16 at the same time, and on the other photodiode 14 side, a common electrode 18 is provided which is divided into a fixed number of blocking diodes 16 and is read out by the photodiodes 14 which are simultaneously driven in a fixed number. Matrix wiring 2 that extracts each signal individually
0 is provided. The semiconductor device 10 having such a configuration is manufactured through the following steps.

As shown in FIG. 2, first, an insulating substrate 13 having a large area so that a plurality of semiconductor devices 10 can be manufactured simultaneously is prepared.
A metal film 22 made of chromium or the like is formed on (12) by a sputtering method, a vacuum evaporation method, etc. (FIG. 2(a)),
Next, the metal film 22 is photo-etched into a predetermined pattern to form the lower electrodes 14A and 14A of the photodiode 14 and the blocking diode 16, as shown in FIG.
16A, a wiring electrode 24 integral with the lower electrode 14A, and a common electrode 18 integral with the lower electrode 16A. Here, the common electrode 18 is common to the blocking diodes 16 divided into a fixed number of blocks, and an electrode pad portion 28 is provided for each common electrode 18. Note that in the process of photo-etching the metal film 22, the surface of the insulating substrate 13 is not damaged.

Next, as shown in FIG.
3, an amorphous silicon-based semiconductor layer 30 and a transparent electrode layer 32 are laminated in sequence. In the structure of this embodiment, the amorphous silicon semiconductor layer 30 is made of p-type a-SiC, i-type a-S, etc. using the plasma CVD method.
Films of i-type and n-type a-Si are used. Further, the transparent electrode layer 32 is used by depositing ITO, SnO2, etc. by sputtering method or vacuum evaporation method.

FIG. 3(a) shows the amorphous silicon semiconductor layer 30 and transparent electrode layer 32 deposited on the insulating substrate 13.
As shown in (b), the upper electrodes 14C, 16C and the semiconductor layer 1 are formed into a predetermined pattern by photoetching and reactive ion etching in the reverse order.
A plurality of 4B and 16B are arranged in one dimension. These lower electrodes 14A, 16A and semiconductor layers 14B, 1
6B and upper electrodes 14C and 16C form a photodiode 14 and a blocking diode 16, respectively.

Next, as shown in FIG. 3(c), a transparent interlayer insulator made of a silicon oxide film or the like is formed on the entire area of the insulating substrate 13 on which the photodiode 14 and the blocking diode 16 are formed using a plasma CVD method. A film 34 is formed, and a contact portion necessary for external connection is formed in the interlayer insulating film 34 using a reactive ion etching (RIE) method. The contact part is common electrode 1
contact holes 38 and 40 for connecting the upper electrode 14C of the photodiode 14 and the upper electrode 16C of the blocking diode 16;
This is a contact hole 42 for extracting a read signal from the lower electrode 14A of No. 4, and is configured so that the interlayer insulating film 34 is not etched other than these contact portions.

Therefore, the area of the interlayer insulating film 34 to be etched is small, and furthermore, the wiring electrodes 24 and electrode pad portions 28 of the lower electrodes 14A, 16A, which do not contain Si, or the upper electrodes 14C, 16C are located below the contact portions.
These are not etched by the reactive ions, and the insulating substrate 13 itself is not etched. Therefore, the etching atmosphere can be kept almost constant, and etching can be performed quickly. In addition, the glass substrate 1 that is scattered by etching
Since there is no amount of component 3, the scattered component is unlikely to re-deposit on the electrode pad portion 28 or the like. Furthermore, the opening 36 provided above the electrode pad portion 28 of the common electrode 18 is as shown by the two-dot chain line in FIG. 1(b).
It is set smaller than the outer peripheral contour of the electrode pad portion 28 so that the insulating substrate 13 is not exposed from the interlayer insulating film 34. Thereby, the moisture resistance in the lower electrode 16A portion is further ensured, the occurrence of leakage is suppressed, and a semiconductor device 10 with excellent performance can be provided.

After forming the openings 36 and contact holes 38, 40, 42 in the interlayer insulating film 34, a metal film is deposited thereon by sputtering, vacuum evaporation, etc., and the metal film is formed into a predetermined pattern. Figure 3(d)
) As shown in FIG.
And an upper lead electrode 48 is formed. The metal film may be composed of a single layer such as chromium Cr, or may be composed of a two-layer structure such as chromium and aluminum. When the metal film is composed of two or more layers, the first layer is selected from a material that has good adhesion to the transparent upper electrodes 14C and 16C and is difficult to react with the upper electrodes 14C and 16C. It is preferable that a material with good wire bonding properties be selected for the upper layer.

After the above steps, the glass substrate 1 is finally formed by plasma CVD or the like, as shown in FIG. 1(a).
An insulating protective film 50 is formed over the entire area of the semiconductor device 3, and the insulating protective film 50 is removed by reactive ion etching to expose only the electrode pad portion 28 necessary for external connection. A device 10 is manufactured. The insulating protective film 50 is removed by etching so as to cover the outer peripheral contour of the upper lead-out electrode 48 attached to the opening 36 on the electrode pad portion 28, and the insulating protective film 50 and the upper lead-out electrode 48 or the upper lead-out electrode 48 are removed. It is formed so that moisture cannot enter from the interface between the layer and the interlayer insulating film 34. For example, silicon nitride or the like is used as the insulating protective film 50.
A transparent protective film made of an insulator is formed. Here, since the insulating protective film 50 is removed only from the electrode pad portion 28 on which the upper lead-out electrode 48 is formed, the glass substrate 13 is not etched when the insulating protective film 50 is etched, and the electrode pad portion 28 is covered. Etching components are not redeposited. A plurality of manufactured semiconductor devices 10 are formed on a large-area glass substrate 13, and the semiconductor devices 10 made of individual glass substrates 12 are manufactured by cutting the glass substrate 13.

The semiconductor device 10 has an electrode pad portion 28
The entire region on the glass substrate 12 (13) except for
Since a sufficient distance is secured to the 16th part and the 20th part of the matrix wiring, moisture hardly enters inside. Therefore, leaks due to moisture intrusion and metal electrode corrosion hardly occur. Further, the components of the glass substrate 13 are not scattered during etching of the insulating protective film 50, and the substrate components are not re-adhered to the electrode pad portion 28, so that the wire bonding properties at the electrode pad portion 28 are reduced. You won't be disappointed. Therefore, it is possible to improve the yield and stabilize the quality of the semiconductor device 10.

In addition, the method for manufacturing the semiconductor device 10 according to this embodiment eliminates the need to etch the components of the glass substrate 13 in the etching process of the interlayer insulating film 34 without etching other parts than the contact parts 36, 38, 40, and 42. Since the scattering of the components is suppressed, there is no re-deposition of the scattered components, and the upper lead-out electrode 48, connection electrode 44, and matrix wiring 20 formed thereon are firmly connected to the electrodes below. Become. Therefore, the obtained semiconductor device 10 does not have the adhesive force of the upper lead-out electrode 48 etc. weakened or the connection resistance increase, and has stable electrical performance and excellent wire bonding properties.

A large number of semiconductor devices 10 having the shape shown in FIG. 1 are manufactured by the method shown in the above embodiment, and 10
After extracting a 0 sample and confirming that there were no bit defects, the sample was subjected to a high temperature and high humidity accelerated test for 1000 hours at 85° C. and 85% RH. As a result, the number of samples in which a leak bit occurred was 1 out of 100. In contrast, a large number of semiconductor devices shown in FIG. 7 were manufactured using a conventional manufacturing method, and 100
A sample was taken and subjected to a high temperature and high humidity accelerated test under the same conditions. As a result, the number of samples in which leak bits occurred was 18 out of 100. As is clear from this test example, the semiconductor device 10 according to the present invention has extremely stable reliability under high temperature and high humidity conditions.

Although the embodiments of the present invention have been described in detail above, the present invention can be practiced in other embodiments. For example, as shown in FIG. 4, in a semiconductor device 51 according to the present invention, the interlayer insulating film 34 may be removed from the outer peripheral portion of the glass substrate 12 including the electrode pad portion 28, and in this embodiment, the insulating protective film 50 The outer peripheral contour of the electrode pad portion 28 and the upper lead-out electrode 48 deposited thereon is covered by the glass substrate 1 excluding the electrode pad portion 28.
The entire area on 2 is covered with an insulating protective film 50. This insulating protective film 50 ensures moisture resistance of the semiconductor device 51, prevents corrosion of the electrode pad portion 28, and prevents leakage of the semiconductor elements 14, 16, etc. and corrosion of the electrodes.

Further, as shown in FIG. 5, in the semiconductor device 52 according to the present invention, a lower electrode 54 formed on the glass substrate 12 forms a connection electrode that connects a photodiode 56 and a blocking diode 58 in series with opposite polarities. However, the wiring electrode 60 and the upper lead-out electrode 62 may be provided on the respective upper electrodes 56C and 58C with an interlayer insulating film 64 interposed therebetween. In this type of semiconductor device 52, the interlayer insulating film 64 is removed from the outer periphery of the glass substrate 12, and the upper lead-out electrode 62 is directly deposited on the glass substrate 12. Therefore, in the semiconductor device 52 of this embodiment, the entire area on the glass substrate 12 except for the electrode pad portion constituted by the upper lead-out electrode 62 is covered with the insulating protective film 66, and this insulating protective film 66 provides moisture resistance. is ensured.

Furthermore, as shown in FIG. 5, the upper lead-out electrode 62 was conventionally deposited on the glass substrate 12 whose surface had been damaged by etching, but as shown in FIG. In such a semiconductor device 68, the upper lead-out electrode 62 is deposited on an interlayer insulating film 64, and moisture resistance of this semiconductor device 68 is ensured by the interlayer insulating film 64 and the insulating protective film 66. In such an embodiment, leakage and corrosion are prevented from occurring, wire bonding properties at the upper lead electrode 62 are good, and electrical connection through contact holes can be achieved with low connection resistance.

Further, in the above embodiments, a semiconductor device having two semiconductor element groups, a photodiode and a blocking diode, has been described, but the present invention can also be applied to a semiconductor device composed of a single semiconductor element group. It is not limited in any way. Furthermore, the semiconductor layer is not limited to a pin-type amorphous silicon-based semiconductor layer, and may include amorphous silicon a-Si, hydrogenated amorphous silicon a-Si:H, hydrogenated amorphous silicon carbide a-SIC:H, and amorphous silicon. In addition to nitride, silicon and carbon,
Amorphous or microcrystalline amorphous silicon semiconductors made of alloys with other elements such as germanium and tin are called pin type, nip type, ni type, pn type, MIS type, heterojunction type, homojunction type, and Schottky type. The semiconductor layer may be of a barrier type or a combination of these types, and may also be a semiconductor device made of semiconductor elements other than amorphous silicon, such as GaAs or CdS.

Furthermore, in addition to a glass substrate, the insulating substrate may be a metal substrate coated with silicon oxide, silicon nitride, silicon oxynalide, etc. for insulation. In addition to chromium, other materials for the lower electrode include
Titanium, nickel, etc. may be used, and the interlayer insulating film may also be made of silicon oxide, silicon nitride, silicon oxynalide, etc., but is not limited to any of them.

Furthermore, for patterning the interlayer insulating film, it is most preferable to use a dry etching method such as a reactive ion etching method, but it goes without saying that a wet etching method may be used if necessary. In addition, the present invention can be implemented with various improvements, modifications, and variations based on the knowledge of those skilled in the art without departing from the spirit thereof.

[0034]

Effects of the Invention In the semiconductor device and the method for manufacturing the same according to the present invention, the insulating protection film for protecting the semiconductor device is formed on the entire area on the insulating substrate except for the electrode pad portion for signal input/output. The distance from the edge of the interface between the film and the insulating substrate to the internal semiconductor elements and wiring can be sufficiently long, and moisture can be prevented from entering. Therefore, leakage or corrosion of electrodes in semiconductor devices and the like is unlikely to occur. In addition, by forming the outer circumferential contour of the electrode pad part with an insulating protective film, the boundary part of the electrode pad part adhered to the insulating substrate is protected by the insulating protective film and is not exposed to the atmosphere. Since there is no corrosion, corrosion of the electrode pad part is prevented, and
Intrusion of moisture from the boundary is prevented.

In addition, the insulating protective film protects the entire area on the insulating substrate except for the electrode pad portion, and at least the interlayer insulating film covering the semiconductor element is etched to form contacts such as openings and contact holes necessary for external connection. By not etching any part other than the contact part when forming the contact part, the components of the insulating substrate will not be scattered by etching, and the scattered components will not re-deposit. Therefore, the upper lead-out electrodes, connection electrodes, etc. formed in the electrode pad parts and contact holes from which the interlayer insulating film has been removed are firmly attached, and connection resistance does not increase or wire bonding performance deteriorates. do not have. Further, since the interlayer insulating film and the like are not etched more than necessary, the etching atmosphere can be kept almost constant, and etching can be performed more uniformly and quickly. Moreover, the interlayer insulating film prevents moisture from entering, thereby almost eliminating leakage and corrosion.

As described above, the present invention can prevent leakage and corrosion in the semiconductor element portion and the electrode portion,
It becomes possible to provide a semiconductor device with extremely stable quality and reliability under high temperature and high humidity conditions.

[Brief explanation of drawings]

FIG. 1 is a diagram showing an example of a semiconductor device according to the present invention; FIG. It is a partial plane explanatory view.

2A and 2B are cross-sectional explanatory views of main parts for explaining the steps of the method for manufacturing the semiconductor device shown in FIG. 1; FIG. ) shows a patterned metal film, (c) shows a semiconductor layer formed, and (d) shows an upper electrode layer deposited.

3 is an explanatory cross-sectional view of a main part for explaining the continuation of the steps of the method for manufacturing a semiconductor device shown in FIG. 2, and FIG.
is a patterned view of the deposited upper electrode layer;
) is a patterned diagram of the formed semiconductor layer, and the same figure (c
) is a diagram in which a contact portion is formed after an interlayer insulating film has been deposited, and (d) in the same figure is a diagram in which an upper lead-out electrode, a connection electrode, and a matrix wiring are formed.

FIG. 4 is an explanatory front cross-sectional view of a main part showing another example of a semiconductor device according to the present invention.

FIG. 5 is an explanatory front cross-sectional view of a main part showing still another example of a semiconductor device according to the present invention.

FIG. 6 is an explanatory front cross-sectional view of a main part showing still another example of a semiconductor device according to the present invention.

FIG. 7 is a diagram illustrating an example of a conventional semiconductor device; FIG. 7(a) is a front cross-sectional explanatory view of the main part taken along line BB in FIG. 7(b), and FIG. 7(b) is a plan view of the main part. It is an explanatory diagram.

FIG. 8 is a plan view showing a large-area insulating substrate in a method of manufacturing a semiconductor device.

FIG. 9 is a partially cutaway plan view showing the entire conventional semiconductor device.

FIG. 10 is a front cross-sectional explanatory diagram of a main part for explaining the main part in a conventional semiconductor device manufacturing method, and FIG.
2 shows the interlayer insulating film deposited, and FIG. 3(b) shows the interlayer insulating film patterned.

[Explanation of symbols]

10, 51, 52, 68; semiconductor devices 12, 13; insulating substrates 14, 56; photodiodes (semiconductor elements) 16, 5
8; Blocking diode (semiconductor element) 20; Matrix wiring 24, 60; Wiring electrode 28; Electrode pad portions 14A, 16A; Lower electrodes 14B, 16B; Semiconductor layer 14C, 16C, 56C, 58C; Upper electrode 34, 64
; Interlayer insulating film 36; Opening portion (contact portion) 38, 40, 42; Contact hole (contact portion)
44; Connection electrode 48, 62; Upper lead-out electrode (electrode pad part) 50, 66
；Insulating protective film

Claims (6)

[Claims] 1. A semiconductor element comprising a lower electrode, a semiconductor layer, and an upper electrode laminated on an insulating substrate, an interlayer insulating film that covers at least the semiconductor element, and a connection provided through the interlayer insulating film. In a semiconductor device configured with an electrode and an insulating protective film covering components on the insulating substrate, the insulating protective film is formed on the entire area on the insulating substrate except for an electrode pad portion for signal input/output. A semiconductor device characterized by: 2. The semiconductor device according to claim 1, wherein the interlayer insulating film is formed over the entire region of the insulating substrate except for a contact portion necessary for external connection. 3. The semiconductor device according to claim 1, wherein at least a peripheral contour portion of the electrode pad portion is covered with the insulating protective film. 4. A second aspect of the present invention, wherein at least an outer circumferential contour of an electrode pad portion of the contact portion that is integrally taken out from the lower electrode of the semiconductor element is covered with the interlayer insulating film. 3. The semiconductor device described in item 3 or item 3. 5. A semiconductor element formed by laminating a lower electrode, a semiconductor layer, and an upper electrode on an insulating substrate, an interlayer insulating film that covers at least the semiconductor element, and a connection provided through the interlayer insulating film. In the method for manufacturing a semiconductor device comprising an electrode and an insulating protective film covering components on the insulating substrate, the insulating protective film is deposited on the entire area on the insulating substrate, and then the insulating 1. A method of manufacturing a semiconductor device, comprising removing only a signal input/output electrode pad portion of a protective film. 6. After the interlayer insulating film is deposited on the entire area on the insulating substrate, only a contact portion necessary for external connection is removed from the interlayer insulating film. A method for manufacturing a semiconductor device according to claim 5.