JPH0513570A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To enable production of a wide variety and a small amount of semiconductor devices by forming at least the first scribe line at a plurality of different intervals. CONSTITUTION:In a semiconductor element formation process such as impurity diffusion and wiring formation, a mask for contact method which is formed by discriminating and providing patterns of different chip sizes in one mask is used or a plurality of reduction projection exposure reticles having different element patterns are used and a semiconductor element which is divided by a scribe line is formed. That is, in a wafer 1, two kinds of semiconductor elements of chip areas of S1 and S2 which are divided by the first and second X-axial scribe lines X1, X2 having different intervals parallel with an orientation flat 2 and the first Y-axial scribe line Y1 which is at right angles to the X-axial scribe line are formed. Thereby, production of a wide variety of kinds and a little amount can be realized.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for manufacturing a semiconductor device which is suitable for small-quantity production of a wide variety of products.

[0002]

2. Description of the Related Art In the conventional method of manufacturing a semiconductor device, the size of a chip on which a semiconductor element is formed ranges from about 1 mm ^{2 in} area to about 200 to 300 mm ² in variety, and one chip A semiconductor wafer (hereinafter, simply referred to as "wafer") has been mainly formed by dividing only one kind of product into scribe lines having the same intervals in the x and y directions. Also, in experiments and prototypes, there are cases where multiple types of semiconductor elements are formed on the same substrate. In this case, they are unified into the largest chip size so that they can be divided into chips by scribe lines in the x and y directions. Was there. However, this method is uneconomical and has not been applied to mass production.

[0003]

According to the conventional method of manufacturing a semiconductor device, when a small chip having an area of about 1 mm ² is manufactured with a small line having a wafer diameter of 3 inches or 4 inches, about 2000 pieces are manufactured per wafer. As the size of the wafer is increased to 6 inches and 8 inches, 8000 to 10000 wafers are manufactured per wafer. Therefore, when manufacturing a small amount of semiconductor device with a small chip size, an unnecessarily large amount of such semiconductor device is manufactured regardless of the required capacity or the production capacity. However, there was a problem in that the reliability of

[0004]

According to the method of manufacturing a semiconductor device of the present invention, semiconductor elements of different types having different chip sizes are provided on one semiconductor substrate by dividing them with scribe lines having different intervals.

[0005]

Embodiments of the present invention will now be described with reference to the drawings. FIG. 1 is a top view of a wafer for explaining a first embodiment of the present invention, and FIG. 2 is a process drawing thereof.

In a semiconductor element forming process such as impurity diffusion or wiring formation, a contact mask provided by distinguishing element patterns having different chip sizes is used for one mask, or a plurality of elements having different element patterns are used. A reticle for reduction projection exposure is used to form a semiconductor element partitioned by scribe lines as shown in FIG. That is, the wafer 1 is provided with first and second X-axis direction scribe lines X ₁ and X ₂ which are parallel to the orientation flat 2 and have different intervals, and a first Y-axis direction scribe line orthogonal to the X-axis direction scribe lines. Two types of semiconductor elements having a chip area of S ₁ and S ₂ are formed by being partitioned by Y ₁ .

The wafer 1 on which the semiconductor elements are formed is subjected to a characteristic check process, then divided into pellets in a pelletizing process, and sent to an assembly process.

As described above, in the first embodiment, two types of semiconductor elements having different chip sizes are formed. However, since the distance between the scribe lines in the X-axis direction is different, the scribing process is conventionally performed. There is almost no change.

In the above embodiment, the case where the distance between the scribe lines in the X-axis direction is changed has been described. However, by changing the distance between the scribe lines in the Y-axis direction,
Semiconductor devices having two or more types of chip sizes can be formed on the same wafer.

FIG. 2 is a top view of a wafer for explaining the second embodiment of the present invention. In the second embodiment, two types of semiconductor elements are formed on the same wafer 1A by two types of X-axis direction scribe lines having different intervals and two types of discontinuous Y-axis direction scribe lines having different intervals. This is the case.

That is, below the line AA of the wafer 1A,
Partitioned by the first to the X-axis direction scribe line X ₁ first a Y-axis direction scribe line Y _1, the chip area to form a semiconductor element S _1, the upper part of the A-A line, first It is defined by the X-axis direction scribe line X ₁ and the third X-axis direction scribe line X ₃ and the first Y-axis direction scribe line Y ₁ different second, and spacing of the Y-axis direction scribe line Y ₂ having different intervals , A semiconductor element having a chip area of S ₃ is formed.

In the case of the wafer 1A thus constructed, if the wafer 1A is divided into two from the line AA, the scribing process becomes almost the same as the conventional one. Incidentally, A- of the wafer 1A
If you provide a buffer area for scribe along the line A,
The wafer 1A does not have to be divided into two.

Further, when a plurality of types of semiconductor elements are formed by a plurality of discontinuous scribe lines, a groove is formed on the scribe lines by a laser beam and pelletizing is performed, so that a plurality of semiconductor elements having different chip sizes are formed. Can be easily divided.

It is desirable that the semiconductor devices formed on the same wafer and having different chip sizes have substantially the same manufacturing process, especially the impurity diffusion process and the heat treatment process.

[0015]

As described above, according to the present invention, two or more kinds of semiconductor elements having different chip sizes are formed in the same wafer by changing the distance between the scribe lines, so that a small semiconductor device can be formed on a large diameter wafer. Even in the case of manufacturing, there is an effect that it is possible to carry out small-lot production of a wide variety of products on a production line having the same production capacity for the same period without causing excess inventory.

[Brief description of drawings]

FIG. 1 is a top view of a wafer for explaining a first embodiment of the present invention.

FIG. 2 is a top view of a wafer for explaining a second embodiment of the present invention.

FIG. 3 is a process drawing for explaining the embodiment.

[Explanation of symbols]

1,1A Wafer 2 Orientation flat X _{1 to} X ₃ X-axis direction scribe line Y ₁ to Y ₂ Y-axis direction scribe line

Claims (2)

[Claims] 1. A semiconductor element is formed on a semiconductor substrate by a plurality of first scribe lines in the X-axis direction and a plurality of second scribe lines in the Y-axis direction orthogonal to the first scribe lines. The method of manufacturing a semiconductor device according to claim 1, wherein at least the first scribe lines are formed at a plurality of different intervals. 2. The method of manufacturing a semiconductor device according to claim 1, wherein at least the second scribe line is composed of a discontinuous scribe line.