JPH0513315A - Wafer holder - Google Patents

Wafer holder

Info

Publication number
JPH0513315A
JPH0513315A JP3192686A JP19268691A JPH0513315A JP H0513315 A JPH0513315 A JP H0513315A JP 3192686 A JP3192686 A JP 3192686A JP 19268691 A JP19268691 A JP 19268691A JP H0513315 A JPH0513315 A JP H0513315A
Authority
JP
Japan
Prior art keywords
wafer
wafer holder
holder
reference surface
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3192686A
Other languages
Japanese (ja)
Inventor
Noriyoshi Takemura
典美 武村
Kunio Uchiyama
久仁男 内山
Saburo Tomizawa
三郎 富沢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to JP3192686A priority Critical patent/JPH0513315A/en
Publication of JPH0513315A publication Critical patent/JPH0513315A/en
Pending legal-status Critical Current

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  • Electron Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To provide a wafer holding device into which a wafer, a simple substance, is inserted singly to be secured acurately. CONSTITUTION:This wafer holding device is so structured that a wafer 4 is held on a wafer holder 3 by electrostatic attraction and the wafer holder 3 holding the wafer 4 is guided up and down and is pressed by a top reference plane 1a to be sucured at a location where an exposed surface 4a of the wafer is not brought into contact with the top reference plane 1a. It is desired that the wafer holder 3 is guided by an independent spring from the transverse direction and is secured. By this method, the flatness of the exposed surface 4a is finely maintained and exposure can be performed as far as an edge.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明はウェハを固定保持するウ
ェハホールド装置に関するものであり、例えば、半導体
集積回路の製造に使用される荷電粒子線露光装置に用い
るに最適のものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer holding device for fixing and holding a wafer, and is most suitable for use in, for example, a charged particle beam exposure apparatus used for manufacturing a semiconductor integrated circuit.

【0002】[0002]

【従来の技術】従来この種の装置の一つは、ウェハを固
定保持するパレットを設け、ウェハをパレットに固定し
てからパレットをステージに載置固定するパレット方式
のものであった。
2. Description of the Related Art Conventionally, one of the devices of this type is a pallet system in which a pallet for holding and holding a wafer is provided, the wafer is fixed to the pallet, and then the pallet is placed and fixed on a stage.

【0003】更に又、静電力によってウェハを静電的に
吸着する静電チャックを設け、この静電チャックを備え
たウェハホルダをバネで付勢し、ウェハを上面基準部材
に押し付け固定する静電チャック方式のものもあった。
Furthermore, an electrostatic chuck for electrostatically attracting a wafer by electrostatic force is provided, and a wafer holder equipped with this electrostatic chuck is urged by a spring to press and fix the wafer against an upper surface reference member. There were also schemes.

【0004】[0004]

【発明が解決しようとする課題】しかしながら、パレッ
ト方式のものにおいては、ウェハをパレットに固定して
からステージに載置するため、被搬送物が大きく且つ重
くなり、従って搬送系が大がかりになり、又ウェハをパ
レットに固定するために人手を要するという問題があっ
た。
However, in the case of the pallet type, since the wafer is fixed on the pallet and then placed on the stage, the object to be transferred is large and heavy, and therefore the transfer system is large. Further, there is a problem that manpower is required to fix the wafer to the pallet.

【0005】又静電チャック方式のものにおいては、ウ
ェハが、上面基準部材にバネで押し付けられ、摩擦力の
みで固定されている。ところが静電チャックは重い物で
あるため、ウェハホルダを固定するためには押しつける
力が必然的に大きくなる。このためウェハが大きな力で
上面基準部材に押し付けられ、ウェハが破損する場合が
あるという問題があった。
Further, in the electrostatic chuck type, the wafer is pressed against the upper surface reference member by a spring and fixed by only frictional force. However, since the electrostatic chuck is a heavy object, the pressing force is necessarily large in order to fix the wafer holder. Therefore, there is a problem in that the wafer may be pressed against the upper surface reference member with a large force and the wafer may be damaged.

【0006】本発明は、上記課題に鑑みてなされたもの
で、ウェハを簡単かつ確実に固定するウェハホールド装
置を提供することを目的とする。
The present invention has been made in view of the above problems, and an object of the present invention is to provide a wafer hold device for easily and surely fixing a wafer.

【0007】[0007]

【課題を解決するための手段】請求項(1)に記載の本
発明のウェハホールド装置は、上下方向の基準面を具備
する装置本体と、ウェハを静電吸着的に支持する平面を
具備すると共に上下移動自在に装置本体に案内され、支
持するウェハの上面が基準面に接触しない位置において
基準面によって上方位置決めされる支持部材と、支持部
材を上下駆動する駆動手段とを有するものである。
A wafer hold device according to the present invention as defined in claim 1 comprises a device main body having a vertical reference surface and a flat surface for electrostatically supporting a wafer. A support member is vertically movably guided by the apparatus main body and is positioned upward by the reference surface at a position where the upper surface of the supporting wafer is not in contact with the reference surface, and a driving unit for vertically driving the support member.

【0008】請求項(2)に記載の本発明のウェハホー
ルド装置は、望ましい押圧固定として、支持部材を上下
移動自在に案内する案内部材を、支持部材に形成したV
−F面と、V−F面に当接する装置本体の当接部材と、
V−F面を当接部材に押圧する装置本体の第1押圧部材
とで構成し、ウェハが基準面に当接した後に、第1押圧
部材と共に、第1押圧部材より強い押圧力で、V−F面
を当接部材に押圧する第2押圧部材を装置本体に設けた
ものである。
In the wafer holding device of the present invention as defined in claim (2), as a desirable pressure fixing, a guide member for guiding the supporting member so as to be vertically movable is formed on the supporting member.
-F surface, and a contact member of the apparatus body that contacts the VF surface,
A first pressing member of the apparatus main body that presses the VF surface against the contact member, and after the wafer contacts the reference surface, V with a stronger pressing force than the first pressing member together with the first pressing member. A second pressing member that presses the -F surface against the contact member is provided in the apparatus main body.

【0009】[0009]

【作用】ウェハが静電吸着によりウェハホルダに保持さ
れ、ウェハホルダがウェハを保持して上下方向に案内さ
れる。ウェハの露光面が上面基準面に接触しない位置
で、ウェハホルダが上面基準面に押圧緊定される。望ま
しくはウェハホルダは横方向から個別のバネで案内さ
れ、固定される。
The wafer is held by the wafer holder by electrostatic attraction, and the wafer holder holds the wafer and guides it in the vertical direction. At the position where the exposed surface of the wafer does not contact the upper reference surface, the wafer holder is pressed against the upper reference surface. Preferably, the wafer holder is laterally guided by individual springs and fixed.

【0010】[0010]

【実施例】本発明の一の実施例を図1及び図2により説
明する。図1及び図2はそれぞれウェハを保持した状態
における一実施例のB矢視図(一部断面)及びA−A矢
視図である。ウェハ4は直径150mm、厚さ0.62
5mm円盤形状のシリコンウェハである。
DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described with reference to FIGS. FIG. 1 and FIG. 2 are a B arrow view (partial cross section) and an AA arrow view of an embodiment in which a wafer is held, respectively. Wafer 4 has a diameter of 150 mm and a thickness of 0.62
It is a 5 mm disk-shaped silicon wafer.

【0011】高精度平面度の上面基準面1aを下面とし
て有し、その面においてウェハホルダ3の位置決め柱1
2a、12b、12cが当接する上面基準部材1は、概
ね四角板状で、中央部にウェハ4の直径より少々大きい
直径160mmの孔1dが穿孔貫通した形状をなしてい
る。孔1dの直径がウェハ4の直径より大きくウェハ4
は全面が露光可能である。上面基準面1aからは先端に
球形部5a′、5b′を有する2個のストッパ5a、5
bが下方に突出形成されている。一方のストッパ5aの
球形部5a′はウェハホルダ3に形成したV型基準面6
と2点において当接し、他方のストッパ5bの球形部5
b′は平面基準面7と1点において当接している。
The upper surface has a reference surface 1a having a high degree of flatness as a lower surface, and the positioning column 1 of the wafer holder 3 is formed on the lower surface.
The upper surface reference member 1 with which 2a, 12b, 12c abut has a substantially rectangular plate shape, and has a shape in which a hole 1d having a diameter of 160 mm, which is slightly larger than the diameter of the wafer 4, penetrates through the central portion. The diameter of the hole 1d is larger than the diameter of the wafer 4
The entire surface can be exposed. Two stoppers 5a, 5 having spherical portions 5a ', 5b' at the tip from the upper reference surface 1a
b is formed so as to project downward. The spherical portion 5a 'of one stopper 5a is a V-shaped reference surface 6 formed on the wafer holder 3.
And the spherical portion 5 of the other stopper 5b.
b ′ is in contact with the plane reference surface 7 at one point.

【0012】ウェハホルダ3の上面3aは高精度平面を
なし、付与された静電チャック機能によりウェハ4を吸
着保持可能である。
The upper surface 3a of the wafer holder 3 forms a highly accurate flat surface, and the wafer 4 can be held by suction by the electrostatic chuck function provided.

【0013】ウェハホルダ3には位置決め柱12a、1
2b、12cの先端が、上面基準部材1の上面基準面1
aに当接するように3か所に形成されている。位置決め
柱12a、12b、12cの突出量は、ウェハホルダ3
に吸着されたウェハ4の上面より高くなる程度である。
又一方のストッパ5aの球形部5a′に当接するV型基
準面6と、他方のストッパ5bの球形部5b′に当接す
る平面基準面7とが側方水平方向に向いて形成されてい
る。又ウェハホルダ3の中央部下面には、不図示の駆動
装置から上下方向の力を受ける駆動部材3dが固定され
ている。
The wafer holder 3 has positioning columns 12a, 1
The tips of 2b and 12c are the top reference plane 1 of the top reference member 1.
It is formed in three places so as to contact a. The amount of protrusion of the positioning columns 12a, 12b, 12c depends on the wafer holder 3
It is higher than the upper surface of the wafer 4 adsorbed on.
Further, a V-shaped reference surface 6 that abuts on the spherical portion 5a 'of one stopper 5a and a flat reference surface 7 that abuts on the spherical portion 5b' of the other stopper 5b are formed so as to be oriented in the lateral horizontal direction. A drive member 3d that receives a vertical force from a drive device (not shown) is fixed to the lower surface of the central portion of the wafer holder 3.

【0014】移動ステージ2は概ね厚い四角板状で、中
央部にウェハホルダ3を収納する浅く広い凹部が形成さ
れ、周縁が堤部となっている。周縁の堤部はその上面2
aが上面基準部材1の上面基準面1aの周縁に当接する
ように形成されていて、この両面の当接した状態で移動
ステージ2は上面基準部材1に、ビス1A〜1Dによっ
て固定されている。
The moving stage 2 is in the shape of a thick square plate, and has a shallow wide recess for accommodating the wafer holder 3 in the central portion thereof, and its peripheral edge is a bank. The peripheral bank is the upper surface 2
a is formed so as to be in contact with the peripheral edge of the upper surface reference surface 1a of the upper surface reference member 1, and the movable stage 2 is fixed to the upper surface reference member 1 by screws 1A to 1D in a state where both surfaces are in contact with each other. .

【0015】移動ステージ2の堤部の一部にはウェハ4
の出入口である切欠き2eが設けられている。ウェハ4
はF方向から切欠き2eを通ってアーム等により上面基
準部材1と移動ステージ2の間の空間内に挿入され、又
F方向とは逆方向に取り出される。
The wafer 4 is provided on a part of the bank of the moving stage 2.
Is provided with a notch 2e serving as a doorway. Wafer 4
Is inserted from the F direction through the notch 2e into the space between the upper surface reference member 1 and the moving stage 2 by an arm or the like, and is taken out in the direction opposite to the F direction.

【0016】又堤部の内側壁面2dには板バネ8と板バ
ネ9が固設されている。板バネ9の当接部9′はウェハ
ホルダ3の側面に当接し、ウェハホルダ3のV型基準面
6を球形部5a′に、平面基準面7を球形部5b′に常
時当接させる。板バネ8は板バネ9よりも付勢力が強い
もので、ウェハホルダ3の上下移動中は圧電素子10が
延びて板バネ8の当接部8′がウェハホルダ3の側面に
当接することを防止し、ウェハホルダ3が上昇して位置
決め柱12a、12b、12cが上面基準部材1に当接
すると、圧電素子10が縮んで板バネ8の当接部8′が
ウェハホルダ3の側面を強い力で押すように構成されて
いる。
A leaf spring 8 and a leaf spring 9 are fixedly mounted on the inner wall surface 2d of the bank. The contact portion 9'of the leaf spring 9 contacts the side surface of the wafer holder 3 so that the V-shaped reference surface 6 and the flat reference surface 7 of the wafer holder 3 are always in contact with the spherical portion 5a 'and the spherical portion 5b', respectively. The leaf spring 8 has a stronger urging force than the leaf spring 9, and prevents the piezoelectric element 10 from extending and the abutting portion 8 ′ of the leaf spring 8 abutting on the side surface of the wafer holder 3 during the vertical movement of the wafer holder 3. When the wafer holder 3 rises and the positioning columns 12a, 12b, 12c come into contact with the upper surface reference member 1, the piezoelectric element 10 contracts so that the contact portion 8'of the leaf spring 8 pushes the side surface of the wafer holder 3 with a strong force. Is configured.

【0017】圧電素子10にはフラットケーブル(不図
示)が接続している。電気が通ずると圧電素子10は作
動し長くなって(延びて)板バネ8をウェハホルダ3か
ら離間させ、電気が切られて非作動状態になると短くな
って板バネ8から離れ、板バネ8にウェハホルダ3を押
圧させる。
A flat cable (not shown) is connected to the piezoelectric element 10. When electricity is conducted, the piezoelectric element 10 operates and becomes longer (extended) to separate the leaf spring 8 from the wafer holder 3. When electricity is cut off and becomes inoperative, the piezoelectric element 10 becomes shorter and leaves the leaf spring 8. The wafer holder 3 is pressed.

【0018】移動ステージ2に形成した凹部(不図示)
の中央には孔2gが貫通し、駆動部材3dと駆動部材3
dに供給して移動ステージ2を上下に移動させる不図示
の動力部材が貫入するようになっている。
A recess formed on the moving stage 2 (not shown)
A hole 2g penetrates through the center of the drive member 3d and the drive member 3
A power member (not shown) that is supplied to d to move the moving stage 2 up and down is inserted.

【0019】コイルバネ11a、11b、11cは移動
ステージ2に穿設された穴2bの底面2c(コイルバネ
11bに対応するもののみ図示)とウェハホルダ3の下
面3bとの間に両者の間に配置され、ウェハホルダ3を
上方(上面基準部材1の方向)へ付勢する。
The coil springs 11a, 11b, 11c are arranged between the bottom surface 2c of the hole 2b formed in the moving stage 2 (only the one corresponding to the coil spring 11b is shown) and the lower surface 3b of the wafer holder 3 therebetween. The wafer holder 3 is biased upward (toward the upper surface reference member 1).

【0020】なお、ウェハ4はウェハホルダ3の上面3
aに静電吸着され水平に保持されている。このウェハを
静電的に吸着する構成は静電チャック等周知のものであ
る。
The wafer 4 is the upper surface 3 of the wafer holder 3.
It is electrostatically attracted to a and is held horizontally. The structure for electrostatically attracting this wafer is well known such as an electrostatic chuck.

【0021】次に動作について説明する。ウェハ4をウ
ェハホルダ3に挿入する際には、先ず圧電素子10に通
電する。圧電素子10は伸長し板バネ8をウェハホルダ
3から離し、ウェハホルダ3のV型基準面6と平面基準
面7とが球形部5a′、5b′に強い力で押圧された状
態を解除する。この状態で不図示の動力部材を駆動部材
3dの切欠きに係合させ、ウェハホルダ3をコイルバネ
11の押圧力に抗して下げる。
Next, the operation will be described. When the wafer 4 is inserted into the wafer holder 3, the piezoelectric element 10 is first energized. The piezoelectric element 10 expands to separate the leaf spring 8 from the wafer holder 3, and releases the state in which the V-shaped reference surface 6 and the flat reference surface 7 of the wafer holder 3 are pressed by the spherical portions 5a ', 5b' with a strong force. In this state, a power member (not shown) is engaged with the notch of the driving member 3d to lower the wafer holder 3 against the pressing force of the coil spring 11.

【0022】しかる後、ウェハ4を切欠き2eを通過し
てウェハホルダ3上の所定位置にアーム(不図示)を以
て挿入する。
Thereafter, the wafer 4 is passed through the notch 2e and inserted into a predetermined position on the wafer holder 3 with an arm (not shown).

【0023】次いで動力部材(不図示)が上昇し、ウェ
ハホルダ3はコイルバネ11の強い付勢により、位置決
め柱12a、12b、12cの先端が上面基準部材1の
上面基準面1aに当接するまで押上られ、強く押圧され
た状態におかれ、ウェハ4は上面3aに静電吸着され
る。
Then, the power member (not shown) rises, and the wafer holder 3 is pushed up by the strong bias of the coil spring 11 until the tips of the positioning columns 12a, 12b, 12c come into contact with the upper reference surface 1a of the upper reference member 1. While being strongly pressed, the wafer 4 is electrostatically attracted to the upper surface 3a.

【0024】しかる後、圧電素子10の通電を停止す
る。圧電素子10は短縮し板バネ8のウェハホルダ3方
向への押圧を妨げないから板バネ8はウェハホルダ3を
その付勢により球形部5a′、5b′に付勢して緊定す
る。
After that, the energization of the piezoelectric element 10 is stopped. Since the piezoelectric element 10 is shortened and does not hinder the pressing of the leaf spring 8 toward the wafer holder 3, the leaf spring 8 urges the wafer holder 3 to the spherical portions 5a 'and 5b' by the urging thereof to tighten the wafer holder 3.

【0025】ウェハ4はウェハホルダ3の上面3aに吸
着固定され、その時上面3aは上面基準部材1の上面基
準面1aより下部に止まるが、孔1dを通して全面が露
光可能である。
The wafer 4 is adsorbed and fixed to the upper surface 3a of the wafer holder 3, and at that time, the upper surface 3a remains below the upper surface reference surface 1a of the upper surface reference member 1, but the entire surface can be exposed through the hole 1d.

【0026】ウェハ4をウェハホルダ3から外す際には
先ず圧電素子10に通電する。圧電素子10は伸長し板
バネ8をウェハホルダ3から離し、緊定を解除する。こ
の状態で動力部材(不図示)が駆動部材3dを下方に牽
引し、コイルバネ11を圧縮しながら、ウェハホルダ3
を所定位置(ウェハ4の挿脱位置)まで下降させる。し
かる後、切欠き2eを通過してF方向よりウェハホルダ
3上の所定位置までアーム(不図示)を挿入する。静電
チャックの吸着を解除しアーム(不図示)にウェハ4を
載せ切欠き2eより取り出す。
When the wafer 4 is removed from the wafer holder 3, the piezoelectric element 10 is first energized. The piezoelectric element 10 expands to separate the leaf spring 8 from the wafer holder 3 and release the tension. In this state, the power member (not shown) pulls the driving member 3d downward, compresses the coil spring 11, and
Is lowered to a predetermined position (position for inserting / removing the wafer 4). Then, an arm (not shown) is inserted from the F direction to a predetermined position on the wafer holder 3 through the notch 2e. The attraction of the electrostatic chuck is released, and the wafer 4 is placed on the arm (not shown) and taken out from the notch 2e.

【0027】引続き他のウェハ4を切欠き2eを通過し
てウェハホルダ3上の所定位置にアーム(不図示)を以
て挿入し、ウェハホルダ3上にウェハ4を受け渡すこと
ができる。
Subsequently, another wafer 4 can be passed through the notch 2e and inserted into a predetermined position on the wafer holder 3 with an arm (not shown) to transfer the wafer 4 onto the wafer holder 3.

【0028】尚本実施例において保持対象とする装置は
直径150mm、厚さ0.625mmのシリコンウェハ
であるが、形状、材質はこれに限られるものではないこ
とは言うまでもない。
The apparatus to be held in this embodiment is a silicon wafer having a diameter of 150 mm and a thickness of 0.625 mm, but it goes without saying that the shape and material are not limited to this.

【0029】[0029]

【発明の効果】ウェハが単体で挿入され、ウェハはウェ
ハホルダ上に吸着保持されるから、露光面の平面度が良
好に維持され、且つ周縁まで露光可能である。ウェハホ
ルダがの姿勢が安定して上下方向に案内されて、良好な
精度でウェハの受け渡しがおこなわれる。
Since the wafer is inserted as a single unit and the wafer is suction-held on the wafer holder, the flatness of the exposure surface is kept good and the edge can be exposed. The posture of the wafer holder is stably guided in the vertical direction, and the wafer is transferred with good accuracy.

【図面の簡単な説明】[Brief description of drawings]

【図1】一実施例のウェハを保持した状態におけるB矢
視図(一部断面)である。
FIG. 1 is a view (partial cross section) taken along arrow B in a state of holding a wafer according to an embodiment.

【図2】一実施例のウェハを保持した状態におけるA−
A矢視図である。
FIG. 2 A- in a state of holding a wafer of one embodiment
FIG.

【符号の説明】[Explanation of symbols]

1..上面基準部材、1a..上面基準面、2..移動
ステージ、3..ウェハホルダ、4..ウェハ、4
a..露光面、5a、5b..ストッパ、5a′、5
b′..球形部、6..V型基準面、7..平面基準
面、8..板バネ、9..板バネ、10..圧電素子、
11a、11b、11c..コイルバネ、12a、12
b、12c..位置決め柱
1. . Top reference member, 1a. . Top reference surface, 2. . Moving stage, 3. . Wafer holder, 4. . Wafer, 4
a. . Exposed surface, 5a, 5b. . Stopper, 5a ', 5
b '. . Spherical portion, 6. . V-type reference surface, 7. . Plane reference plane, 8. . Leaf spring, 9. . Leaf spring, 10. . Piezoelectric element,
11a, 11b, 11c. . Coil springs, 12a, 12
b, 12c. . Positioning pillar

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】上下方向の基準面を具備する装置本体と、
ウェハを静電吸着的に支持する平面を具備すると共に上
下移動自在に前記装置本体に案内され、支持する前記ウ
ェハの上面が前記基準面に接触しない位置において前記
基準面によって上方位置決めされる支持部材と、前記支
持部材を上下駆動する駆動手段とを有することを特徴と
するウェハホールド装置。
1. A device main body having a vertical reference surface,
A support member that has a flat surface for electrostatically supporting the wafer and is vertically movably guided by the apparatus main body and is positioned upward by the reference surface at a position where the upper surface of the supporting wafer does not contact the reference surface. And a drive means for vertically driving the support member.
【請求項2】前記支持部材を上下移動自在に案内する案
内部材を、前記支持部材に形成したV−F面と、前記V
−F面に当接する前記装置本体の当接部材と、前記V−
F面を前記当接部材に押圧する装置本体の第1押圧部材
とで構成し、前記ウェハが前記基準面に当接した後に、
前記第1押圧部材と共に、前記第1押圧部材より強い押
圧力で、前記V−F面を前記当接部材に押圧する第2押
圧部材を前記装置本体に設けたことを特徴とする請求項
1に記載のウェハホールド装置。
2. A guide member for guiding the support member so as to be vertically movable, and a V-F surface formed on the support member, and the V-face.
-The abutting member of the apparatus body that abuts the F surface, and the V-
A first pressing member of the apparatus body that presses the F surface against the contact member, and after the wafer contacts the reference surface,
2. The apparatus main body is provided with a second pressing member that presses the VF surface against the abutting member with a pressing force stronger than that of the first pressing member, together with the first pressing member. The wafer hold device described in 1.
JP3192686A 1991-07-08 1991-07-08 Wafer holder Pending JPH0513315A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3192686A JPH0513315A (en) 1991-07-08 1991-07-08 Wafer holder

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3192686A JPH0513315A (en) 1991-07-08 1991-07-08 Wafer holder

Publications (1)

Publication Number Publication Date
JPH0513315A true JPH0513315A (en) 1993-01-22

Family

ID=16295362

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3192686A Pending JPH0513315A (en) 1991-07-08 1991-07-08 Wafer holder

Country Status (1)

Country Link
JP (1) JPH0513315A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0715225A1 (en) 1994-11-30 1996-06-05 Sharp Kabushiki Kaisha Developing unit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0715225A1 (en) 1994-11-30 1996-06-05 Sharp Kabushiki Kaisha Developing unit

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