JP2005223046A - Jig for semiconductor thin-film wafer - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a jig for a semiconductor thin-film wafer capable of handling, without damaging the semiconductor thin-film wafer. <P>SOLUTION: In the jig 1 for the semiconductor thin-film wafer, own underside has an electrostatic attracting section 2 as a holding surface 22 holding the top face 101 of the semiconductor thin-film wafer 100, by electrostatic attraction against the action of the gravity on the wafer. In the jig 1, own underside further has a handling section 3, in which one end side is connected to the electrostatic attraction section 2, and the other end side is extended in a direction of separating from the electrostatic attracting section 2. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a semiconductor thin film wafer jig for handling a semiconductor thin film wafer.

  In recent years, with miniaturization and high performance of semiconductor elements, there is a demand for a technique for bonding very thin semiconductor wafers (hereinafter referred to as semiconductor thin film wafers) in the manufacturing process. Taking light-emitting elements such as light-emitting diodes and semiconductor lasers as examples, III-V compound semiconductors, such as light-emitting elements in which the light-emitting layer portion is formed of AlGaInP mixed crystals, use the fact that AlGaInP mixed crystals lattice-match with GaAs. Then, it can be formed by epitaxially growing a light emitting layer portion made of AlGaInP mixed crystal on a GaAs single crystal substrate. However, since the AlGaInP mixed crystal constituting the light emitting layer has a larger band gap than GaAs, the emitted light is absorbed by the GaAs substrate, and it is difficult to obtain sufficient light extraction efficiency. In order to solve this problem, various publications including Patent Document 1 disclose that a growth GaAs substrate is peeled off while a reinforcing element substrate composed of a semiconductor is provided with a reflective Au layer. A technique for bonding to a peeled surface via a tape is disclosed. At this time, the semiconductor wafer including the light emitting layer portion that is peeled off from the GaAs substrate and then bonded to the element substrate may be as thin as about 50 μm or less (for example, 30 μm).

JP 2001-339100 A

  In order to obtain the bonded light emitting element as described above, it is necessary to handle the semiconductor thin film wafer including the light emitting layer portion in many processes including the bonding process. However, when such a semiconductor thin film wafer is handled while being sandwiched by means such as tweezers, for example, the semiconductor thin film wafer is often damaged, and thus there is a problem that waste is increased in terms of cost.

  Accordingly, an object of the present invention is to provide a semiconductor thin film wafer jig that can be handled without damaging the semiconductor thin film wafer.

Means for solving the problems / effects of the invention

In order to solve the above problems, in the jig for semiconductor thin film wafer of the present invention,
An electrostatic chucking portion whose lower surface is a holding surface that holds the upper surface of the semiconductor thin film wafer by electrostatic chucking against gravity acting on the semiconductor thin film wafer;
A handling part having one end coupled to the electrostatic attraction part and the other end extending in a direction away from the electrostatic attraction part;
It is characterized by providing.

  According to the present invention, a semiconductor thin film wafer jig (hereinafter also referred to as a wafer jig) is formed by placing the upper surface of a semiconductor thin film wafer (hereinafter also simply referred to as a thin film wafer) on the lower surface (holding surface) of the electrostatic chuck. The thin film wafer is held by electrostatic adsorption. Rather than sandwiching the thin film wafer by means such as conventional tweezers, the thin film wafer is damaged by holding the jig in contact with only one main surface (here, the upper surface) of the thin film wafer. It is possible to handle without any problems. In addition, since the upper surface of the thin film wafer is electrostatically attracted to the lower surface (holding surface) of the electrostatic adsorption portion, the thin film wafer can be simply installed by placing the electrostatic adsorption portion above the mounted thin film wafer. Therefore, for example, it is not necessary to provide a space for inserting a part of the wafer jig below the thin film wafer. That is, it is possible to lift the mounted thin film wafer without depending on the shape of the mounting surface (table) below.

  Next, in the jig for a semiconductor thin film wafer of the present invention, the handling portion can be a gripping portion for manually handling the semiconductor thin film wafer together with the electrostatic attraction portion. With this configuration, the wafer jig can be used as a handling means that can be handled without damaging the thin film wafer, replacing the conventional tweezers.

  On the other hand, the jig for a semiconductor thin film wafer of the present invention may be provided with a drive mechanism that moves the electrostatic chuck while holding the semiconductor thin film wafer, and the handling part may be a drive action part of the drive mechanism. it can. By comprising in this way, the said jig | tool for wafers can be applied as an automatic handling apparatus which can be handled without damaging a thin film wafer.

  Next, in the semiconductor thin film wafer jig of the present invention, there is provided a switching mechanism for switching between an adsorption state in which the semiconductor thin film wafer can be adsorbed on the holding surface of the electrostatic adsorption unit and an adsorption release state in which the adsorption state is released. It can be configured to have. By comprising in this way, the operation | movement (it hold | maintains from the mounting state opposite to it) from the state which hold | maintained the thin film wafer by the electrostatic adsorption part can be performed smoothly. Therefore, for example, even when positioning is required when placing a thin film wafer, if positioning is performed in the suction state and then switched to the suction release state, the positioning can be performed accurately.

  Specifically, the switching mechanism is capable of moving back and forth in the protruding direction from the holding surface, and a knockout pin that releases the suction state by pushing the semiconductor thin film wafer sucked on the holding surface away from the holding surface when protruding. It can be configured to have.

  The switching mechanism can also be configured to have a ground switch that grounds the holding surface for releasing the charge. When the charged state is released by the ground connection, the thin film wafer is not attracted to the electrostatic attracting portion, that is, the attracted state is released. Furthermore, in order to make the suction release state more reliable, the knockout pin and the earth switch can be used in combination.

  Next, the jig for a semiconductor thin film wafer of the present invention can be configured so that the holding surface of the electrostatic chucking portion has a convex portion that contacts the upper surface of the semiconductor thin film wafer in a point contact or line contact form. . By comprising in this way, the damage | wound which generate | occur | produces on the thin film wafer surface can be reduced compared with the case where an electrostatic attraction part contacts a thin film wafer.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
FIG. 1 shows a semiconductor thin film wafer jig (hereinafter, also simply referred to as a wafer jig) 1 according to an embodiment of the present invention, and FIG. FIG. 4 is a diagram illustrating a handling process of 100) (also simply referred to as a thin film wafer). The wafer jig 1 has an electrostatic attraction in which its lower surface 22 is a holding surface 22 that holds the upper surface 101 of the thin film wafer 100 by electrostatically adsorbing the upper surface 101 against the gravity gr acting on the thin film wafer 100. And a handling unit 3 having one end coupled to the electrostatic adsorption unit 2 and the other end extending in a direction away from the electrostatic adsorption unit 2. The handling unit 3 is a gripping unit for manually handling the thin film wafer together with the electrostatic adsorption unit 2. Note that at least the holding surface 22 of the electrostatic attraction unit 2 is made of a dielectric material such as a fluororesin.

  Specifically, the handling of the thin film wafer 100 by the wafer jig 1 first places the electrostatic chuck 2 on the placement surface G as shown in FIGS. 2 (a) and 2 (b). By placing the holding surface 22 on the thin film wafer 100 and subjecting the holding surface 22 to electrostatic polarization, an upward Coulomb force ef greater than the gravitational force gr acting on the thin film wafer 100 is applied to the thin film wafer 100, so that the upper surface 101 is held on the holding surface. Adsorbed to 22. In this state, as shown in FIG. 2 (c), handling is performed by an operation by a person via a gripping part (handling part 3) connected to the electrostatic attraction part 2 for manual handling.

  In order to electrostatically attract the thin film wafer 100 as described above, the wafer jig 1 has a charging power source B that electrostatically polarizes the holding surface 22 of the electrostatic adsorption portion 2. The circuit configuration is such that, for example, as shown in FIG. 3, one of the charging power supply B is connected to the charging plate ES to charge the charging plate ES. The charging plate ES is incorporated in the electrostatic attraction unit 2, whereby the holding surface 22 is electrostatically polarized. Further, the other pole of the charging power source B is grounded, and this can be performed by, for example, a human body holding the handling unit 3. Note that the polarity to which the charging plate ES is charged is not particularly limited, but depending on the type of thin film wafer to be handled, there is a case where electrostatic polarization tends to occur on one polarity side. It is more desirable to charge to the opposite polarity side. For example, when the thin film wafer is a compound semiconductor, it contains atoms having a high electronegativity, and thus has a characteristic of being easily electrostatically polarized on the positive electrode side. Therefore, it is desirable to charge the charging plate ES on the negative electrode side.

  The changeover switch SW in the figure switches between a path L1 for connecting the charging plate ES to the charging power source B for charging the charging plate ES and a path L2 for connecting the charging plate ES to the ground for releasing charging. Thereby, it is possible to switch between an adsorption state in which the thin film wafer 100 can be adsorbed by the holding surface 22 of the electrostatic adsorption unit 2 and an adsorption release state in which the adsorption state is released. The changeover switch SW can be provided in the handling unit 3 as shown in FIGS.

  By the way, since static electricity can be easily generated by friction, the holding surface 22 of the electrostatic attraction unit 2 can be charged without using the circuit as described above. That is, the wafer jig 1 can be configured to have a charging means for generating an adsorption force on the holding surface 22 of the electrostatic adsorption unit 2 based on frictional charging. For example, the wafer jig 1 can be provided with a friction mechanism (charging means) for charging. The handling unit 3 can also be a charging unit that collects ambient static electricity caused by friction. For example, the static electricity is generated on the human body side by rubbing the skin and the cloth, and the static electricity is collected by the handling unit 3 (charging means), so that the holding surface 22 of the electrostatic adsorption unit 2 is Charge.

  As shown in FIG. 5A, the semiconductor thin film wafer jig 1 can be advanced and retracted in the protruding direction from the holding surface 22, and the thin film wafer 100 adsorbed on the holding surface 22 when protruding is held by the holding surface 22. It can comprise so that it may have the knockout pin 4 which cancels | releases an adsorption state by pushing away from. Thereby, it is possible to switch between an adsorption state in which the thin film wafer 100 can be adsorbed by the holding surface 22 of the electrostatic adsorption unit 2 and an adsorption release state in which the adsorption state is released. As shown in FIG. 5B, in the present embodiment, a plurality of knockout pins 4 are dispersed on the holding surface 22 of the electrostatic attraction unit 2, and the center of the holding surface 22 is the geometric center position. It is formed as follows. Thereby, it becomes easy to push the thin film wafer 100 parallel to the holding surface 22, and the suction state can be released satisfactorily.

  Specifically, the knockout pin 4 is controlled by the changeover switch SW. For example, it is realized by an internal structure as shown in FIG. This is a switching mechanism using the principle of leverage, and in the lever L1, when the force point P1 integrated with the changeover switch SW is pushed downward, the action point A1 located on the opposite side to the fulcrum F1 is formed. Pushed upwards. Subsequently, when the action point A1 is pushed up in this way, the force point P2 of the lever L2 is pushed up at the same time, and the action point A2 located on the opposite side to the fulcrum F2 is pushed down. The action plate A2 to which the knockout pin 4 is connected is pushed downward by the action point A2 pushed downward, and the knockout pin 4 protrudes from the holding surface 22. Further, when the changeover switch SW is not pressed, the knockout pin 4 is prevented from protruding from the holding surface 22 by the spring 4S provided in the periphery.

  Note that the changeover switch SW that controls the knockout pin 4 can also serve as the changeover switch in the above-described circuit configuration (see FIG. 3). In this case, the charging plate ES is connected to the charging power source B and the knockout pin 4 is housed in the electrostatic chucking portion 2, and the charging plate ES is grounded and the knockout pin 4 is held. The suction release state protruding from the surface 22 is switched by the changeover switch SW.

  As shown in FIG. 7, the semiconductor thin film wafer jig 1 has a convex portion 5 that is in contact with the upper surface 101 of the thin film wafer 100 in a point contact or line contact manner on the holding surface 22 of the electrostatic attraction portion 2. Can be configured. By comprising in this way, the damage | wound which generate | occur | produces on the upper surface 101 of the thin film wafer 100 can be reduced compared with the case where the holding surface 22 surface-contacts the thin film wafer 100. FIG. FIG. 7B shows an arrangement form of dot-like convex portions 5 that make point contact with the thin film wafer 100, and FIG. 7C shows an example of arrangement form of line-like convex portions 5 that make line contact with the thin film wafer 100. FIG.

  The semiconductor thin film wafer jig 1 described above has a form in which the thin film wafer 100 is manually handled by the handling portion 3 that is a gripping portion. As described below, the semiconductor thin film wafer jig 1 is a thin film thin film wafer. A configuration in which a driving mechanism for automatically handling the wafer 100 may be provided. As illustrated in FIG. 4, the wafer jig 1 includes a drive mechanism 6 that moves the electrostatic attraction unit 2 while holding the thin film wafer 100, and the handling unit 3 drives the drive mechanism 6. It is an action part. The handling part 3 having one end connected to the electrostatic attraction part 2 and the other end extending so as to be separated from the holding surface 22 in the vertical direction is connected to the drive mechanism 6 on the other end side. The drive mechanism 6 controls the operation of the electrostatic attraction unit 2 by driving the handling unit 3. The thin film wafer 100 is handled in the same process as in the manual handling shown in FIG. Specifically, a mechanism for moving the electrostatic attraction unit 2 and the handling unit 3 in the vertical direction Y1 and a mechanism for moving in the horizontal direction Y2 are provided. The movement in the vertical direction Y1 and the movement in the horizontal direction Y2 are provided. In combination, the thin film wafer 100 can be moved from the mounting table G1 to the mounting table G2. Also in the present embodiment, the above-described knockout pin (see FIG. 5) or convex portion (see FIG. 7) can be formed on the holding surface 22 of the electrostatic attraction unit 2.

The figure showing the outline of one Embodiment of the jig for semiconductor thin film wafers of this invention The figure showing the handling process of the semiconductor thin film wafer by the jig | tool for semiconductor thin film wafers of this invention The figure showing the circuit structure for charging the holding surface of the electrostatic attraction part of this invention The figure showing the outline of the jig | tool for semiconductor thin film wafers provided with the drive mechanism of this invention. The figure showing the outline of the jig | tool for semiconductor thin film wafers provided with the knockout pin of this invention The figure showing the outline of the internal structure of the jig | tool for semiconductor thin film wafers of this invention of FIG. The figure showing the outline of the jig | tool for semiconductor thin film wafers which has a convex part in the holding surface of the electrostatic attraction part of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Jig for semiconductor thin film wafers 2 Electrostatic adsorption part 22 Holding surface 3 Handling part 4 Knockout pin 5 Convex part 6 Drive mechanism 100 Semiconductor thin film wafer 101 Upper surface of semiconductor thin film wafer SW Switch B Charging power supply ES Charging plate

Claims (9)

An electrostatic chucking portion whose lower surface is a holding surface that holds the upper surface of the semiconductor thin film wafer by electrostatic chucking against gravity acting on the semiconductor thin film wafer;
A handling unit having one end coupled to the electrostatic adsorption unit and the other end extending in a direction away from the electrostatic adsorption unit;
A jig for a semiconductor thin film wafer, comprising:   The jig for a semiconductor thin film wafer according to claim 1, wherein the handling part is a grip part for manually handling the semiconductor thin film wafer together with the electrostatic attraction part.   2. The semiconductor thin film according to claim 1, further comprising: a driving mechanism that moves the electrostatic attraction unit while holding the semiconductor thin film wafer, wherein the handling unit is a driving action unit of the driving mechanism. Wafer jig.   4. A switching mechanism for switching between an adsorption state in which the semiconductor thin film wafer can be adsorbed by the holding surface of the electrostatic adsorption unit and an adsorption release state in which the adsorption state is released. The jig for semiconductor thin film wafers according to any one of the above.   The switching mechanism has a knockout pin that can be moved back and forth in the protruding direction from the holding surface and that releases the suction state by pushing the semiconductor thin film wafer sucked on the holding surface away from the holding surface when protruding. The semiconductor thin film wafer jig according to claim 4.   6. The semiconductor thin film wafer jig according to claim 4, wherein the switching mechanism includes an earth switch for earthing the holding surface for releasing the charge.   7. The projection according to claim 1, wherein the holding surface of the electrostatic attraction portion has a convex portion that contacts the upper surface of the semiconductor thin film wafer in a point contact or line contact form. Semiconductor thin film wafer jig.   The jig for a semiconductor thin film wafer according to any one of claims 1 to 7, further comprising charging means for generating an attracting force on the holding surface of the electrostatic attracting portion based on frictional charging.   8. The semiconductor thin film wafer jig according to claim 1, further comprising a charging power source for electrostatically polarizing the holding surface of the electrostatic adsorption portion.

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