JPH05126616A - Liquid level meter - Google Patents
Liquid level meterInfo
- Publication number
- JPH05126616A JPH05126616A JP7223891A JP7223891A JPH05126616A JP H05126616 A JPH05126616 A JP H05126616A JP 7223891 A JP7223891 A JP 7223891A JP 7223891 A JP7223891 A JP 7223891A JP H05126616 A JPH05126616 A JP H05126616A
- Authority
- JP
- Japan
- Prior art keywords
- liquid level
- unit chip
- superconductor
- film
- unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007788 liquid Substances 0.000 title claims abstract description 54
- 239000002887 superconductor Substances 0.000 claims abstract description 34
- 238000010438 heat treatment Methods 0.000 claims abstract description 24
- 239000000919 ceramic Substances 0.000 claims abstract description 15
- 238000001514 detection method Methods 0.000 claims abstract description 12
- 230000001681 protective effect Effects 0.000 claims abstract description 12
- 239000012212 insulator Substances 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims description 20
- 238000005259 measurement Methods 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000010030 laminating Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 abstract 3
- 239000004020 conductor Substances 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 239000007789 gas Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000005452 bending Methods 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000002966 varnish Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910001233 yttria-stabilized zirconia Inorganic materials 0.000 description 1
Landscapes
- Measurement Of Levels Of Liquids Or Fluent Solid Materials (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は液体窒素等の液化ガスの
液面検知に用いる超電導体を用いた液面レベル計に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid level meter using a superconductor for detecting the liquid level of liquefied gas such as liquid nitrogen.
【0002】[0002]
【従来の技術】超電導体を用いた液面レベル計は、液中
に浸漬している超電導体部分が超電導状態になるのに対
して、液面外にある部分が常電導状態であることを利用
したものであり、全長に対する常電導状態部分長から、
浸漬部分長である液面レベルを求めるようにしたもので
ある。そして、この種のものは既に多くの提案がなされ
ている。2. Description of the Related Art In a liquid level meter using a superconductor, while a superconductor portion immersed in a liquid is in a superconducting state, a portion outside the liquid surface is in a normal conducting state. It was used, from the normal conduction state part length to the total length,
The liquid level, which is the immersion portion length, is determined. And many proposals have already been made for this kind of thing.
【0003】[0003]
【発明が解決しようとする課題】上記従来の液面計は、
基板に対して酸化物超電導体からなる焼結体のような脆
い物質を棒状又は膜状に加工しなければならない。した
がって、これらの物の強度又は均一な加工の点で問題が
ある。即ち、基板上にある程度の長さを有して均一な厚
さ及び膜質を有する超電導膜を形成するには技術的のみ
ならず、経済的にも問題がある。DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention
A brittle substance such as a sintered body made of an oxide superconductor has to be processed into a rod or a film on the substrate. Therefore, there is a problem in strength or uniform processing of these materials. That is, there is a problem not only technically but also economically in forming a superconducting film having a certain length and a uniform thickness and film quality on a substrate.
【0004】更に、液化ガスの容器には、その用途によ
って様々な形状及び大きさがあり、最初から決められた
長さの液面レベル計を製作することは実情にそわない
し、又無駄でもある。本発明は上記事情に鑑みてなされ
たものであり、容器の形状及び大きさに左右されること
なく、任意に対応可能な液面レベル計を提供することを
目的としている。Further, the liquefied gas container has various shapes and sizes depending on its application, and it is neither practical nor wasteful to manufacture a liquid level meter having a predetermined length from the beginning. .. The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a liquid level meter that can be arbitrarily adapted without depending on the shape and size of a container.
【0005】[0005]
【課題を解決するための手段】上記目的を達成するた
め、本発明は細分されたチップ状のセラミックス基板上
に発熱体を設け、その発熱体の上面を覆って絶縁膜を形
成し、その絶縁膜の上面に臨海温度が液化ガスの温度よ
りも高い酸化物超電導体厚幕を積層すると共に、前記酸
化物超電導体厚膜を保護膜で覆って単位チップ素子を形
成し、前記単位チップ素子を所定個数連結した液面検知
部とした。又、チップ状のセラミックス基板の同一面上
に、発熱抵抗体と超電導体厚膜とを互いに電気的絶縁を
保って並列に形成するか、又はチップ状のセラミックス
基板の片面上に発熱抵抗体を、他方の片面上に超電導体
厚膜を形成し、更に発熱抵抗体及び超電導体厚膜を保護
膜で覆うことによって単位チップ素子とし、これら単位
チップ素子を所定個数連結した液面検知部とした。In order to achieve the above-mentioned object, the present invention provides a heating element on a subdivided chip-shaped ceramic substrate, forms an insulating film covering the upper surface of the heating element, A unit chip element is formed by laminating an oxide superconductor thick film whose seaside temperature is higher than the temperature of the liquefied gas on the upper surface of the film, and covering the oxide superconductor thick film with a protective film. A predetermined number of liquid level detectors were connected. Further, a heating resistor and a superconductor thick film are formed in parallel on the same surface of the chip-shaped ceramic substrate while maintaining electrical insulation between them, or a heating resistor is provided on one surface of the chip-shaped ceramic substrate. , A superconductor thick film is formed on one surface of the other side, and the heating resistor and the superconductor thick film are covered with a protective film to form a unit chip element, and a predetermined number of these unit chip elements are connected to form a liquid level detection unit. ..
【0006】[0006]
【作用】所定個数連結する場合、その個数は容器に合せ
た個数とし、又、液面の検出時、液に接している個所の
単位チップ素子と液面よりも上の気体に接している個所
の単位チップ素子とは離隔していて、しかも単位チップ
素子は小型であるから、液面よりも上の気体に接してい
る個所にある単位チップ素子の酸化物超電導体厚膜は常
電導を示し、液に接している個所の単位チップ素子の酸
化物超電導体のみが超電導を示すため、液面の測定誤差
が減少する。When a predetermined number of units are connected, the number should be the number that matches the container, and when detecting the liquid level, the unit chip element in the position in contact with the liquid and the unit in contact with the gas above the liquid level. Since the unit chip element is small and the unit chip element is small, the oxide superconductor thick film of the unit chip element in the part in contact with the gas above the liquid surface shows normal conduction. Since only the oxide superconductor of the unit chip element in contact with the liquid exhibits superconductivity, the measurement error of the liquid surface is reduced.
【0007】[0007]
【実施例】以下図面を参照して実施例を説明する。図1
は本発明による液面レベル計を拡大して示した原理図で
ある。図において、単位チップ素子1は夫々同一構造を
有し、必要個数が接続される。なお単位チップ素子1の
構造については後述するが、所定個数連結した単位チッ
プ素子1部分が液面の検知部となる。単位チップ素子の
内部にあるヒータ11にヒータ用電源2が接続される。そ
してヒータは液面の検知部が液中に浸漬された状態にお
いて、液面内と液面外との温度勾配を明確にするための
ものであり、図において黒く塗りつぶした部分がヒータ
11を表わしている。Embodiments will be described below with reference to the drawings. Figure 1
FIG. 3 is an enlarged principle view showing a liquid level meter according to the present invention. In the figure, the unit chip elements 1 have the same structure, and a required number of them are connected. Although the structure of the unit chip element 1 will be described later, the portion of the unit chip element 1 connected by a predetermined number serves as a liquid level detection unit. The heater power source 2 is connected to the heater 11 inside the unit chip element. The heater is for clarifying the temperature gradient between the inside and outside of the liquid surface when the liquid surface detection part is immersed in the liquid, and the black portion in the figure indicates the heater.
Represents 11.
【0008】単位チップ内にある酸化物超電導体厚膜12
に液面測定用電源3が接続される。図において斜線部分
が酸化物超電導体厚膜12を表わす。又、液面の検出原理
は従来同様に、ヒータ11に対してヒータ用電源2から一
定の電力を供給しておき、一方、酸化物超電導体厚膜12
にも液面測定用電源3から一定電流を電流系5で測定し
つつ流し、この際、電圧計4で検出される電圧値から液
面レベルを測定するものである。Thick oxide superconductor film 12 in a unit chip
The liquid level measuring power source 3 is connected to. In the figure, the shaded portion represents the oxide superconductor thick film 12. In addition, the liquid level detection principle is the same as in the prior art, where a constant power is supplied from the heater power source 2 to the heater 11, while the oxide superconductor thick film 12 is used.
In addition, a constant current is made to flow while being measured by the current system 5 from the liquid level measuring power supply 3, and at this time, the liquid level is measured from the voltage value detected by the voltmeter 4.
【0009】図2〜図5は液面レベル計を構成する単位
チップの構造を説明する分解図である。先ず、図2では
セラミックス基板13上にヒータ11を折曲して形成し、そ
の上面には、図3に示されるように、絶縁体厚膜14を形
成する。次いでその上部には、図4に示されるように、
酸化物超電導体厚膜12を折曲して形成し、その上には、
図5に示されるように、保護膜15を形成した。要するに
セラミックス基板上に発熱抵抗体(ヒータ),絶縁体,
超電導体を順に形成し、最後に上面を保護膜によって被
覆する積層構成とした。2 to 5 are exploded views for explaining the structure of a unit chip constituting the liquid level meter. First, in FIG. 2, the heater 11 is bent and formed on the ceramics substrate 13, and an insulator thick film 14 is formed on the upper surface thereof as shown in FIG. Then on top of it, as shown in FIG.
The oxide superconductor thick film 12 is formed by bending, and on it,
As shown in FIG. 5, the protective film 15 was formed. In short, heating resistors (heaters), insulators,
The superconductor was formed in order, and finally the upper surface was covered with a protective film to form a laminated structure.
【0010】図6は液面レベル計を用いて、液体窒素等
の液化ガスの液面レベルを検知する全体構成例を示す。
窒素容器16の内部には液体窒素等の液化ガス17が充填さ
れ、この液化ガス内に単位チップ素子を連結した検知部
18が設置される。ヒータ用電源2,液面測定用電源3等
は上記した通りである。。FIG. 6 shows an example of the entire structure for detecting the liquid level of a liquefied gas such as liquid nitrogen using a liquid level meter.
The nitrogen container 16 is filled with a liquefied gas 17 such as liquid nitrogen, and a detection unit in which unit chip elements are connected to the liquefied gas
18 are installed. The heater power source 2, the liquid level measuring power source 3, etc. are as described above. .
【0011】なお、実際の単位チップ素子の作製には、
セラミックス基板としてはイットリア安定化ジルコニア
基板及びアルミナ基板を用い、10mm角で厚さ1mmとし
た。発熱体としては夫々ジルコニア,アルミナを40%体
積添加した白金発熱抵抗体を用い、厚さ30μm ,幅200
〜300 μm として基板状に折曲して形成し、抵抗値を20
〜30Ωとした。絶縁膜はジルコニア系の膜とし発熱抵抗
体の接続用の取出し端子の部分を除いて全面に約50μm
厚さで形成した。In the actual production of the unit chip element,
As a ceramic substrate, a yttria-stabilized zirconia substrate and an alumina substrate were used, and the thickness was 10 mm square and the thickness was 1 mm. As the heating elements, platinum heating resistors containing 40% by volume of zirconia and alumina were used, and the thickness was 30 μm and the width was 200 μm.
It is formed by bending it to a substrate shape with a resistance of 20 μm.
It was set to ~ 30Ω. The insulating film is a zirconia-based film, about 50 μm on the entire surface except for the lead-out terminals for connecting the heating resistor.
Formed in thickness.
【0012】又、超電導体膜としてはイットリウム系酸
化物超電導体膜を用い、幅300 〜500 μm ,長さ24mm,
厚さ30μm となるようにした。更に保護膜としてはポリ
イミド樹脂又はゼネラル・エレクトリック社製のGE7
031ワニスの高分子膜を用いた。As the superconductor film, a yttrium oxide superconductor film is used, and the width is 300 to 500 μm, the length is 24 mm,
The thickness was set to 30 μm. Further, as a protective film, a polyimide resin or GE7 manufactured by General Electric Company is used.
A polymer film of 031 varnish was used.
【0013】ここで膜の作成には保護膜を除いてスクリ
ーン印刷法を用い、焼成温度は白金発熱体膜及び絶縁体
膜は1000〜1500℃とし、酸化物超電導体は950 〜980 ℃
とした。保護膜はスピンコート法又は塗布法により行な
い、高分子の重合はポリイミド樹脂は約300 ℃,GE7
031ワニスは約150 ℃で行ない形成した。そして検知
部18としては上記のように作成された単位チップ素子を
10個連結して図1の構成とした。The film is formed by screen printing except for the protective film, the firing temperature is set to 1000 to 1500 ° C. for the platinum heating element film and the insulator film, and 950 to 980 ° C. for the oxide superconductor.
And The protective film is formed by a spin coating method or a coating method, and the polymer is polymerized at about 300 ° C. with GE7.
The 031 varnish was formed at about 150 ° C. Then, as the detection unit 18, the unit chip element created as described above is used.
Ten pieces were connected to form the structure shown in FIG.
【0014】図7は、このように作成された検知部を用
いた液面レベル計の測定結果を示し、図の縦軸を液面の
高さが0の場合の電圧を100 として規格した出力電圧、
横軸を液面の高さとすると、液面の高さが減少するにつ
れて、ほぼ比例した出力電圧が発生している。なお、ヒ
ータ電源から発熱抵抗体に供給される電力は全体で約2
Wとし、超電導体を流れる電流は約1mAとした。FIG. 7 shows the measurement results of the liquid level meter using the detector thus created, and the vertical axis of the figure is the output standardized by setting the voltage to 100 when the liquid level is 0. Voltage,
If the horizontal axis is the liquid level height, an output voltage that is substantially proportional is generated as the liquid level height decreases. The total power supplied from the heater power supply to the heating resistor is about 2
W and the current flowing through the superconductor was about 1 mA.
【0015】上記実施例によって説明した単位チップ素
子は基板状に発熱抵抗体,絶縁体,超電導体等を順次積
層する構成として説明したが、このような構成に限定さ
れるものではない。図8は単位チップ素子の他の実施例
であり、本実施例ではセラミックス基板13上に発熱抵抗
体(ヒータ)11と超電導体厚膜12を互いに電気的絶縁を
保って並列状に設けたものである。The unit chip element described in the above embodiment has been described as a structure in which a heating resistor, an insulator, a superconductor and the like are sequentially laminated on a substrate, but the invention is not limited to such a structure. FIG. 8 shows another embodiment of the unit chip element. In this embodiment, a heating resistor (heater) 11 and a superconductor thick film 12 are provided in parallel on a ceramic substrate 13 while electrically insulating each other. Is.
【0016】図9は更に他の実施例であり、本実施例で
はセラミックス基板上に発熱抵抗体(ヒータ)11と超電
導体厚膜12とを互いに電気的絶縁を保って設けた点は図
8と同様であるが、夫々を折曲して配置した点が異なっ
ている。FIG. 9 shows still another embodiment. In this embodiment, a heating resistor (heater) 11 and a superconductor thick film 12 are provided on a ceramic substrate while maintaining electrical insulation therebetween. Same as, but different in that they are arranged by bending each.
【0017】図10,図11,図12は更に他の実施例であ
り、本実施例はセラミックス基板の片面(前面)上に発
熱抵抗体(ヒータ)11を設け(図10)、他方の片面(裏
面)上に超電導体厚膜12を設け(図11)たものでその側
面は図12に示す通りである。なお、これらの各単位チッ
プ上面は前記同様に被覆する。この種の単位チップを用
いても前記実施例と同様な効果が得られることは明らか
である。FIGS. 10, 11 and 12 show still another embodiment. In this embodiment, a heating resistor (heater) 11 is provided on one surface (front surface) of a ceramic substrate (FIG. 10), and the other surface is formed on the other surface. The superconductor thick film 12 is provided on the (rear surface) (FIG. 11), and its side surface is as shown in FIG. The upper surface of each unit chip is coated in the same manner as above. It is obvious that the same effect as that of the above-mentioned embodiment can be obtained by using this type of unit chip.
【0018】[0018]
【発明の効果】以上説明したように、本発明によれば細
分されたチップ状のセラミックス基板上に発熱体と絶縁
体と超電導体とを設けると共に、超電導体の上面から保
護膜で覆って単位チップ素子を形成し、これら単位チッ
プ素子を所定個数連結して液面検知部とする構成とした
ので、以下に列挙する効果を奏する。 液面検知部の部分的な故障は、単位チップ素子の交
換により容易に修理できる。 単位チップ素子の連結によって液面検知部としてい
るため、生産する装置も1種類でよく、経済的であって
大量生産に適している。 単位チップ素子1個だけで、ポイント式液面計とな
る。 容器の様々の形状・大きさに連結作業のみで対応で
きる。As described above, according to the present invention, a heating element, an insulator and a superconductor are provided on a chip-shaped ceramic substrate which is subdivided, and the unit is formed by covering the upper surface of the superconductor with a protective film. Since the chip elements are formed and a predetermined number of these unit chip elements are connected to each other to form the liquid level detection unit, the following effects are achieved. A partial failure of the liquid level detector can be easily repaired by replacing the unit chip element. Since the liquid level detection unit is formed by connecting the unit chip elements, only one type of device needs to be produced, which is economical and suitable for mass production. A point-type level gauge can be achieved with only one unit chip element. Can be used for various shapes and sizes of containers only by connecting them.
【0019】[0019]
【図1】液面レベル計を拡大して示した原理図。FIG. 1 is a principle view showing an enlarged liquid level meter.
【図2】基板上に発熱抵抗体を設けた図。FIG. 2 is a diagram in which a heating resistor is provided on a substrate.
【図3】発熱抵抗体の上面に絶縁体を設けた図。FIG. 3 is a diagram in which an insulator is provided on the upper surface of a heating resistor.
【図4】絶縁体の上面に超電導体を設けた図。FIG. 4 is a diagram in which a superconductor is provided on an upper surface of an insulator.
【図5】超電導体の上面を被覆した図。FIG. 5 is a diagram in which the upper surface of a superconductor is covered.
【図6】液面レベル計を用いて液体窒素等の液化ガスの
液面レベルを検知する全体構成例図。FIG. 6 is a diagram showing an example of the overall configuration for detecting the liquid level of a liquefied gas such as liquid nitrogen using a liquid level meter.
【図7】液面レベル計の測定結果を示す図。FIG. 7 is a diagram showing a measurement result of a liquid level meter.
【図8】単位チップ素子の他の実施例図。FIG. 8 is a diagram showing another example of the unit chip element.
【図9】単位チップ素子の更に他の実施例図。FIG. 9 is a view showing still another embodiment of the unit chip element.
【図10】単位チップ素子の更に他の実施例の前面図。FIG. 10 is a front view of still another embodiment of the unit chip element.
【図11】図10の裏面図。FIG. 11 is a rear view of FIG. 10.
【図12】図10の側面図。FIG. 12 is a side view of FIG.
【符号の説明】1 単位チップ素子 2 ヒータ用電源 3 液面測定用電源 4 電圧計 5 電流計 11 発熱抵抗体 12 超電導体厚膜 13 セラミックス基板 14 絶縁体 15 保護膜 16 窒素容器 17 液化ガス 18 検知部[Explanation of symbols] 1 unit Chip element 2 Heater power supply 3 Liquid level measurement power supply 4 Voltmeter 5 Ammeter 11 Heating resistor 12 Superconductor thick film 13 Ceramic substrate 14 Insulator 15 Protective film 16 Nitrogen container 17 Liquefied gas 18 Detector
───────────────────────────────────────────────────── フロントページの続き (72)発明者 清水 賢司 埼玉県熊谷市大字三ケ尻5310番地 秩父セ メント株式会社開発本部内 (72)発明者 秋濱 良三 埼玉県熊谷市大字三ケ尻5310番地 秩父セ メント株式会社開発本部内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Kenji Shimizu Kenji Shimizu 5310 Sangejiri, Kumagaya-shi, Saitama Chichibu cement Co., Ltd.Development headquarters Company Development Division
Claims (3)
上に発熱体を設け、その発熱体の上面を覆って絶縁体を
形成し、その絶縁体の上面に超電導体を積層すると共
に、前記超電導体上面を保護膜で覆って単位チップ素子
を形成し、前記単位チップ素子を所定個数連結して液面
検知部としたことを特徴とする液面レベル計。1. A heating element is provided on a chip-shaped ceramic substrate that is subdivided, an insulator is formed to cover the upper surface of the heating element, and a superconductor is laminated on the upper surface of the insulator, and the superconductor is also formed. A liquid level meter, wherein an upper surface is covered with a protective film to form a unit chip element, and a predetermined number of the unit chip elements are connected to form a liquid level detection unit.
の同一面上に発熱体と超電導体とを互いに接触しないよ
う配置したことを特徴とする液面レベル計用単位チップ
素子。2. A unit chip element for a liquid level gauge, wherein a heating element and a superconductor are arranged on the same surface of a subdivided chip-shaped ceramic substrate so as not to contact each other.
の片面上に発熱体を設けると共に、他の片面上に超電導
体を配置したことを特徴とする液面レベル計用単位チッ
プ素子。3. A unit chip element for a liquid level meter, wherein a heating element is provided on one surface of a subdivided chip-shaped ceramic substrate and a superconductor is arranged on the other surface.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7223891A JPH05126616A (en) | 1991-01-29 | 1991-01-29 | Liquid level meter |
KR1019910009580A KR940002192B1 (en) | 1991-01-29 | 1991-06-11 | Liquid level meter |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7223891A JPH05126616A (en) | 1991-01-29 | 1991-01-29 | Liquid level meter |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH05126616A true JPH05126616A (en) | 1993-05-21 |
Family
ID=13483511
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7223891A Pending JPH05126616A (en) | 1991-01-29 | 1991-01-29 | Liquid level meter |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPH05126616A (en) |
KR (1) | KR940002192B1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021047209A (en) * | 2020-12-21 | 2021-03-25 | ヒューレット−パッカード デベロップメント カンパニー エル.ピー.Hewlett‐Packard Development Company, L.P. | Display of liquid level |
US11366000B2 (en) | 2015-10-28 | 2022-06-21 | Hewlett-Packard Development Company, L.P. | Fluid sensing |
-
1991
- 1991-01-29 JP JP7223891A patent/JPH05126616A/en active Pending
- 1991-06-11 KR KR1019910009580A patent/KR940002192B1/en not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11366000B2 (en) | 2015-10-28 | 2022-06-21 | Hewlett-Packard Development Company, L.P. | Fluid sensing |
JP2021047209A (en) * | 2020-12-21 | 2021-03-25 | ヒューレット−パッカード デベロップメント カンパニー エル.ピー.Hewlett‐Packard Development Company, L.P. | Display of liquid level |
Also Published As
Publication number | Publication date |
---|---|
KR940002192B1 (en) | 1994-03-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US3607084A (en) | Combustible gas measurement | |
US4396899A (en) | Platinum thin film resistance element and production method therefor | |
US4890494A (en) | Atmospheric sensor | |
JPH0517650Y2 (en) | ||
EP0191627B1 (en) | Electrochemical apparatus and method of manufacturing the same | |
US4505803A (en) | Oxygen concentration detector | |
GB2342451A (en) | Halogen gas detector | |
US4138881A (en) | Resistor-type solid electrolyte oxygen sensor | |
Ikegami et al. | Thick-film thermistor and its applications | |
US4916935A (en) | Low power solid state gas sensor with linear output and method of making the same | |
Thomas | Precision resistors and their measurement | |
JPH05126616A (en) | Liquid level meter | |
CN208013139U (en) | A kind of ceramic matrix CH4Sensor | |
Dziedzic et al. | Heaters for gas sensors from thick conductive or resistive films | |
JPH03262949A (en) | Liquid kind detecting device | |
JPH05107099A (en) | Liquid level meter | |
EP0395149B1 (en) | Method and device for accelerated determining of ageing of one or more elements with an electromagnetic ageing parameter | |
EP0038078A1 (en) | Gas sensor | |
JPH0216475A (en) | Superconducting magnetism measuring instrument | |
US6763712B1 (en) | Flow-sensing device and method for fabrication | |
EP0086415B1 (en) | Humidity sensitive device | |
JPH01199124A (en) | Apparatus for detecting liquid level of fuel | |
JP2984095B2 (en) | Gas sensor manufacturing method | |
JPS6229004B2 (en) | ||
JPH0277622A (en) | Heat-sensitive type fuel residual amount detector |