JPH051240B2 - - Google Patents
Info
- Publication number
- JPH051240B2 JPH051240B2 JP8931786A JP8931786A JPH051240B2 JP H051240 B2 JPH051240 B2 JP H051240B2 JP 8931786 A JP8931786 A JP 8931786A JP 8931786 A JP8931786 A JP 8931786A JP H051240 B2 JPH051240 B2 JP H051240B2
- Authority
- JP
- Japan
- Prior art keywords
- dislocation
- inp
- free
- dislocations
- semi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 claims description 11
- 239000012535 impurity Substances 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 12
- 230000007547 defect Effects 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000002109 crystal growth method Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 238000001636 atomic emission spectroscopy Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8931786A JPS62246899A (ja) | 1986-04-17 | 1986-04-17 | 化合物半導体結晶成長方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8931786A JPS62246899A (ja) | 1986-04-17 | 1986-04-17 | 化合物半導体結晶成長方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62246899A JPS62246899A (ja) | 1987-10-28 |
| JPH051240B2 true JPH051240B2 (enrdf_load_stackoverflow) | 1993-01-07 |
Family
ID=13967285
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8931786A Granted JPS62246899A (ja) | 1986-04-17 | 1986-04-17 | 化合物半導体結晶成長方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62246899A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110760932B (zh) | 2019-11-22 | 2021-02-23 | 中国电子科技集团公司第十三研究所 | 一种利用铟磷混合物制备磷化铟晶体的方法 |
-
1986
- 1986-04-17 JP JP8931786A patent/JPS62246899A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62246899A (ja) | 1987-10-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CA1157962A (en) | Method of growing a doped iii-v alloy layer by molecular beam epitaxy | |
| JP2908815B2 (ja) | 少なくとも１．４電子ボルトの禁止帯幅を有する広禁止帯幅半導体の結晶のドーピング方法 | |
| CN101451265B (zh) | 砷化镓单晶衬底及制造砷化镓单晶的方法 | |
| US3773571A (en) | Preparation of semiconductor ternary compounds of controlled composition by predetermined cooling rates | |
| JPH051240B2 (enrdf_load_stackoverflow) | ||
| US4725563A (en) | ZnSe green light emitting diode | |
| US3694275A (en) | Method of making light emitting diode | |
| US4578126A (en) | Liquid phase epitaxial growth process | |
| US4609411A (en) | Liquid-phase epitaxial growth method of a IIIb-Vb group compound | |
| Ito et al. | Growth of p-type InP single crystals by the temperature gradient method | |
| JPH0670973B2 (ja) | 化合物半導体のエピタキシヤルウエハ | |
| RU2031477C1 (ru) | СПОСОБ ИЗГОТОВЛЕНИЯ ПОЛУПРОВОДНИКОВЫХ СТРУКТУР НА ОСНОВЕ СОЕДИНЕНИЙ AIII и BV МЕТОДОМ ЖИДКОФАЗНОЙ ЭПИТАКСИИ | |
| Rao et al. | Postgrowth heat-treatment effects in high-purity liquid-phase-epitaxial In0. 53Ga0. 47As | |
| US3746943A (en) | Semiconductor electronic device | |
| GB2080619A (en) | Epitaxial semiconductor device | |
| US4498937A (en) | Liquid phase epitaxial growth method | |
| JP2705016B2 (ja) | ＩｎＰ系化合物半導体装置 | |
| JPS5629382A (en) | Light emitting device of double hetero structure and manufacture thereof | |
| JP2645418B2 (ja) | ＧａＡｓ化合物半導体単結晶 | |
| Grant | Progress in III-V materials technology | |
| Kurbatov et al. | Stimulated emission from PbTe–Pb1–xSnxTe–PbTe doubleheterostructures | |
| Naito et al. | Properties of GaP Red-Emitting Diodes Grown by Liquid-Phase Epitaxy II. Effect of Substrate Orientation | |
| JPS61271823A (ja) | 液相エピタキシヤル成長方法 | |
| JP2003188105A (ja) | リン化硼素系半導体素子及びその製造方法 | |
| JPH0670974B2 (ja) | 化合物半導体エピタキシヤルウエハの製造方法 |