JPS62246899A - 化合物半導体結晶成長方法 - Google Patents
化合物半導体結晶成長方法Info
- Publication number
- JPS62246899A JPS62246899A JP8931786A JP8931786A JPS62246899A JP S62246899 A JPS62246899 A JP S62246899A JP 8931786 A JP8931786 A JP 8931786A JP 8931786 A JP8931786 A JP 8931786A JP S62246899 A JPS62246899 A JP S62246899A
- Authority
- JP
- Japan
- Prior art keywords
- dislocation
- crystal
- impurity
- inp
- compound semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 15
- 238000000034 method Methods 0.000 title claims description 7
- 239000004065 semiconductor Substances 0.000 title claims description 7
- 150000001875 compounds Chemical class 0.000 title claims description 3
- 239000012535 impurity Substances 0.000 claims abstract description 12
- 229910021478 group 5 element Inorganic materials 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 14
- 229910052804 chromium Inorganic materials 0.000 abstract description 3
- 229910052742 iron Inorganic materials 0.000 abstract description 3
- 239000002994 raw material Substances 0.000 abstract description 3
- 230000007547 defect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 238000002109 crystal growth method Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000001636 atomic emission spectroscopy Methods 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000035755 proliferation Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8931786A JPS62246899A (ja) | 1986-04-17 | 1986-04-17 | 化合物半導体結晶成長方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8931786A JPS62246899A (ja) | 1986-04-17 | 1986-04-17 | 化合物半導体結晶成長方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62246899A true JPS62246899A (ja) | 1987-10-28 |
| JPH051240B2 JPH051240B2 (enrdf_load_stackoverflow) | 1993-01-07 |
Family
ID=13967285
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8931786A Granted JPS62246899A (ja) | 1986-04-17 | 1986-04-17 | 化合物半導体結晶成長方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62246899A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021098348A1 (zh) * | 2019-11-22 | 2021-05-27 | 中国电子科技集团公司第十三研究所 | 一种利用铟磷混合物制备磷化铟晶体的方法 |
-
1986
- 1986-04-17 JP JP8931786A patent/JPS62246899A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021098348A1 (zh) * | 2019-11-22 | 2021-05-27 | 中国电子科技集团公司第十三研究所 | 一种利用铟磷混合物制备磷化铟晶体的方法 |
| US11781240B2 (en) | 2019-11-22 | 2023-10-10 | The 13Th Research Institute Of China Electronics Technology Group Corporation | Method for preparing indium phosphide crystal by utilizing indium-phosphorus mixture |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH051240B2 (enrdf_load_stackoverflow) | 1993-01-07 |
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