JPH0512297Y2 - - Google Patents
Info
- Publication number
- JPH0512297Y2 JPH0512297Y2 JP803989U JP803989U JPH0512297Y2 JP H0512297 Y2 JPH0512297 Y2 JP H0512297Y2 JP 803989 U JP803989 U JP 803989U JP 803989 U JP803989 U JP 803989U JP H0512297 Y2 JPH0512297 Y2 JP H0512297Y2
- Authority
- JP
- Japan
- Prior art keywords
- molecular beam
- flange
- vacuum port
- source
- beam source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000008020 evaporation Effects 0.000 claims description 11
- 238000001704 evaporation Methods 0.000 claims description 11
- 239000007788 liquid Substances 0.000 claims description 9
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 5
- 210000001015 abdomen Anatomy 0.000 claims description 4
- 239000000463 material Substances 0.000 description 16
- 230000006866 deterioration Effects 0.000 description 6
- 210000002445 nipple Anatomy 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000010292 electrical insulation Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Landscapes
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP803989U JPH0512297Y2 (en:Method) | 1989-01-26 | 1989-01-26 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP803989U JPH0512297Y2 (en:Method) | 1989-01-26 | 1989-01-26 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0299972U JPH0299972U (en:Method) | 1990-08-09 |
| JPH0512297Y2 true JPH0512297Y2 (en:Method) | 1993-03-29 |
Family
ID=31213565
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP803989U Expired - Lifetime JPH0512297Y2 (en:Method) | 1989-01-26 | 1989-01-26 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0512297Y2 (en:Method) |
-
1989
- 1989-01-26 JP JP803989U patent/JPH0512297Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0299972U (en:Method) | 1990-08-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH01305894A (ja) | 薄膜結晶成長装置および成長方法 | |
| JPH0512297Y2 (en:Method) | ||
| KR102002316B1 (ko) | 박막증착장치의 증발원 및 그를 가지는 박막증착장치 | |
| CA1051325A (en) | Liquid phase epitaxial growth | |
| KR20120109022A (ko) | 대면적 ｃｉｇｓ 박막제조장비 | |
| JP3007702B2 (ja) | 真空成膜装置 | |
| JP4491449B2 (ja) | 薄膜堆積用分子線源セル | |
| JPH0238442Y2 (en:Method) | ||
| JP2714802B2 (ja) | 有機金属化学気相反応装置 | |
| JPS61242011A (ja) | 気相成長装置 | |
| JPS6272113A (ja) | 分子線結晶成長装置 | |
| KR100434890B1 (ko) | 분자빔 소스 및 분자빔 에피택시 장치 | |
| JPH1160375A (ja) | 分子線エピタキシー用分子線源ルツボ | |
| KR100700497B1 (ko) | 증착장치 | |
| JPS6439719A (en) | Epitaxial growth | |
| JPH04274316A (ja) | 分子線エピタキシー用セル | |
| JPH0532468B2 (en:Method) | ||
| JPS6396928A (ja) | 蒸着装置 | |
| JPH04198091A (ja) | セルシャッター装置 | |
| JPS63282190A (ja) | 分子線結晶成長装置 | |
| JPH04111730U (ja) | 分子線エピタキシイ装置 | |
| JPH02243758A (ja) | 真空装置 | |
| JPH0483793A (ja) | 気相成長装置 | |
| JPS63147331A (ja) | ホツトウオ−ルエピタキシヤル成長装置 | |
| JPH04224192A (ja) | 分子線エピタキシ装置用シャッタ |