JPH05119344A - Liquid crystal display device - Google Patents
Liquid crystal display deviceInfo
- Publication number
- JPH05119344A JPH05119344A JP27939191A JP27939191A JPH05119344A JP H05119344 A JPH05119344 A JP H05119344A JP 27939191 A JP27939191 A JP 27939191A JP 27939191 A JP27939191 A JP 27939191A JP H05119344 A JPH05119344 A JP H05119344A
- Authority
- JP
- Japan
- Prior art keywords
- pixel
- liquid crystal
- display device
- crystal display
- storage capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
- G02F1/136268—Switch defects
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、液晶表示デバイスに関
し、特に同一画素内の画素電極と蓄積容量及び薄膜トラ
ンジスタの構造に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device, and more particularly to a structure of a pixel electrode, a storage capacitor and a thin film transistor in the same pixel.
【0002】[0002]
【従来の技術】従来、アクティブマトリクス形液晶表示
デバイスの画素単位の構造は、図2に示すように1個の
薄膜トランジスタ(TFT)と、それによって電圧を制
御される画素電極26で一画素を構成し、信号電圧の供
給源として信号配線22を設けていた。また、液晶に印
加される電圧保持のための1個の蓄積容量28と、それ
に伴なう蓄積容量配線27を設けていた。なお、Dは一
画素の幅を、Eは一画素の長さを表わしている。2. Description of the Related Art Conventionally, the structure of a pixel unit of an active matrix type liquid crystal display device comprises one thin film transistor (TFT) as shown in FIG. However, the signal wiring 22 is provided as the supply source of the signal voltage. Further, one storage capacitor 28 for holding the voltage applied to the liquid crystal and the storage capacitor wiring 27 accompanying it are provided. It should be noted that D represents the width of one pixel and E represents the length of one pixel.
【0003】[0003]
【発明が解決しようとする課題】従来の液晶表示デバイ
スの一画素において、1個の薄膜トランジスタの短絡又
は1個の蓄積容量の短絡などが生じた場合、一画素の面
積が大きいと表示の際点欠陥として認められ易いという
問題があった。When a short circuit of one thin film transistor or a short circuit of one storage capacitor occurs in one pixel of a conventional liquid crystal display device, the area of one pixel is large and the display point is large. There was a problem that it was easily recognized as a defect.
【0004】[0004]
【課題を解決するための手段】本発明の液晶表示デバイ
スは、1個の薄膜トランジスタによって制御される画素
電極を一画素内に4個有しており、そして一画素内の4
個の薄膜トランジスタは、それぞれ独立して走査配線に
接続される構造である。この走査配線とゲート電極とな
る走査線上に堆積されるアモルファスシリコン膜上の薄
膜トランジスタとの間隔がレーザで修正可能な10μm
以上あり、また、蓄積容量と蓄積容量配線との間隔もレ
ーザで修正可能な10μm以上ある構造となっている。The liquid crystal display device of the present invention has four pixel electrodes controlled by one thin film transistor in one pixel, and four pixel electrodes in one pixel.
Each thin film transistor has a structure in which it is independently connected to the scan wiring. The distance between the scanning wiring and the thin film transistor on the amorphous silicon film deposited on the scanning line serving as the gate electrode is 10 μm which can be corrected by laser.
In addition, the distance between the storage capacitor and the storage capacitor wiring is 10 μm or more that can be corrected by a laser.
【0005】[0005]
【実施例】次に本発明について図面を参照して説明す
る。図1は、本発明の液晶表示デバイスの一部分である
TFT基板側の一画素を示している。本発明では、一画
素が4分割された構造を有している。基板上に蓄積容量
8a,8b,8c,8d及び蓄積容量配線7を設け、さ
らに走査配線1を設けゲート絶縁膜を堆積したのちに、
アモルファスシリコン膜3a,3b,3c,3dをゲー
ト電極となる走査配線1の一部分にパターニングしてあ
り、この上にソース電極5a,5b,5c,5dとドレ
イン電極4a,4b,4c,4dを設けてTFTを形成
している。上述したTFT及び蓄積容量は、1画素を4
分割している画素電極6a,画素電極6b,画素電極6
c及び画素電極6dに各々1個ずつ配備してあり独立し
た機能を有している。The present invention will be described below with reference to the drawings. FIG. 1 shows one pixel on the TFT substrate side which is a part of the liquid crystal display device of the present invention. The present invention has a structure in which one pixel is divided into four. After the storage capacitors 8a, 8b, 8c, 8d and the storage capacitor wiring 7 are provided on the substrate and further the scanning wiring 1 is provided and the gate insulating film is deposited,
Amorphous silicon films 3a, 3b, 3c, 3d are patterned on a part of the scanning wiring 1 serving as a gate electrode, and source electrodes 5a, 5b, 5c, 5d and drain electrodes 4a, 4b, 4c, 4d are provided thereon. To form a TFT. The above-mentioned TFT and storage capacitor are
The divided pixel electrode 6a, pixel electrode 6b, and pixel electrode 6
One is provided for each of c and the pixel electrode 6d and has an independent function.
【0006】なお、蓄積容量8と蓄積容量配線7との間
隔および走査配線1と各TFTのアモルファスシリコン
膜の端面までの間隔は、10μm以上あけられている。
これは、TFTや蓄積容量で短絡等が生じ表示異常が生
じた時、レーザで配線を切断できるようにするためであ
る。このように本発明によれば、一つの単位画素を小さ
くでき高精細な表示が可能である。The space between the storage capacitor 8 and the storage capacitor wiring 7 and the space between the scanning wiring 1 and the end face of the amorphous silicon film of each TFT are 10 μm or more.
This is so that the wiring can be cut by the laser when a short circuit or the like occurs in the TFT or the storage capacitor and a display abnormality occurs. As described above, according to the present invention, one unit pixel can be made small and high-definition display is possible.
【0007】[0007]
【発明の効果】以上説明したように、本発明は高精細な
表示を得るために一つの画素電極を4個の画素電極に分
割し、それぞれの単位画素にTFT及び蓄積容量を配置
することで画素の微細化が可能になり、また1つの単位
画素は独立した機能をもち、4個の画素のうち1個又は
2個の画素について点欠陥が生じた場合でも、欠陥とし
て認められにくいという利点がある。As described above, according to the present invention, one pixel electrode is divided into four pixel electrodes and a TFT and a storage capacitor are arranged in each unit pixel in order to obtain a high-definition display. Pixels can be miniaturized, and one unit pixel has an independent function, and even if a point defect occurs in one or two of the four pixels, it is difficult to recognize it as a defect. There is.
【0008】さらに、表示異常を軽減するため、TFT
または蓄積容量で短絡した箇所の電極に接続される配線
をレーザで切ることができ、明点,欠陥を減少させるこ
とができるという効果がある。Further, in order to reduce the display abnormality, the TFT
Alternatively, the wiring connected to the electrode at the location short-circuited by the storage capacitor can be cut with a laser, which has the effect of reducing bright spots and defects.
【図1】本発明の第1の実施例のTFT基板の単位画素
領域の平面図である。FIG. 1 is a plan view of a unit pixel region of a TFT substrate according to a first embodiment of the present invention.
【図2】従来技術のTFT基板の単位画素領域の平面図
である。FIG. 2 is a plan view of a unit pixel area of a conventional TFT substrate.
1,21 走査配線 2,22 信号配線 3a,3b,3c,3d,23 アモルファスシリコ
ン膜 4a,4b,4c,4d,24 ドレイン電極 5a,5b,5c,5d,25 ソース電極 6a,6b,6c,6d,26 画素電極 7,27 蓄積容量配線 8a,8b,8c,8d,28 蓄積容量1, 21 Scan line 2, 22 Signal line 3a, 3b, 3c, 3d, 23 Amorphous silicon film 4a, 4b, 4c, 4d, 24 Drain electrode 5a, 5b, 5c, 5d, 25 Source electrode 6a, 6b, 6c, 6d, 26 Pixel electrode 7, 27 Storage capacitance wiring 8a, 8b, 8c, 8d, 28 Storage capacitance
Claims (2)
れる画素電極を一画素内に4個有し、この一画素内の4
個の薄膜トランジスタは、それぞれ独立して走査配線に
接続されており、さらに一画素内に4個の蓄積容量を具
備することを特徴とする液晶表示デバイス。1. A pixel has four pixel electrodes controlled by one thin film transistor, and four pixel electrodes within this pixel are provided.
A liquid crystal display device characterized in that each of the thin film transistors is independently connected to the scanning wiring, and further has four storage capacitors in one pixel.
れる走査配線とアモルファス・シリコン膜の端面との間
隔および蓄積容量と蓄積容量配線との間隔は、10μm
以上あけられていることを特徴とする請求項1記載の液
晶表示デバイス。2. The distance between the scanning wiring connected to the thin film transistor in the same pixel and the end face of the amorphous silicon film and the distance between the storage capacitor and the storage capacitor wiring are 10 μm.
The liquid crystal display device according to claim 1, wherein the liquid crystal display device is provided above.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27939191A JPH05119344A (en) | 1991-10-25 | 1991-10-25 | Liquid crystal display device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27939191A JPH05119344A (en) | 1991-10-25 | 1991-10-25 | Liquid crystal display device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH05119344A true JPH05119344A (en) | 1993-05-18 |
Family
ID=17610477
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP27939191A Pending JPH05119344A (en) | 1991-10-25 | 1991-10-25 | Liquid crystal display device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH05119344A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006189846A (en) * | 2005-01-03 | 2006-07-20 | Samsung Electronics Co Ltd | Array substrate and display panel having same |
KR100697364B1 (en) * | 1999-12-28 | 2007-03-20 | 비오이 하이디스 테크놀로지 주식회사 | Tft-lcd |
WO2009069359A1 (en) * | 2007-11-30 | 2009-06-04 | Sharp Kabushiki Kaisha | Liquid crystal display, active matrix substrate, liquid crystal panel, liquid crystal display unit, and television receiver |
JP2012068573A (en) * | 2010-09-27 | 2012-04-05 | Toppan Printing Co Ltd | Thin film transistor array, image display device, and manufacturing method for the thin film transistor array |
US9335853B2 (en) | 2011-08-16 | 2016-05-10 | Samsung Display Co., Ltd. | Display device including sensor units and driving method thereof |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02165125A (en) * | 1988-12-20 | 1990-06-26 | Seiko Epson Corp | Display device |
JPH0333724A (en) * | 1989-06-30 | 1991-02-14 | Hitachi Ltd | Liquid crystal display device |
-
1991
- 1991-10-25 JP JP27939191A patent/JPH05119344A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02165125A (en) * | 1988-12-20 | 1990-06-26 | Seiko Epson Corp | Display device |
JPH0333724A (en) * | 1989-06-30 | 1991-02-14 | Hitachi Ltd | Liquid crystal display device |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100697364B1 (en) * | 1999-12-28 | 2007-03-20 | 비오이 하이디스 테크놀로지 주식회사 | Tft-lcd |
JP2006189846A (en) * | 2005-01-03 | 2006-07-20 | Samsung Electronics Co Ltd | Array substrate and display panel having same |
WO2009069359A1 (en) * | 2007-11-30 | 2009-06-04 | Sharp Kabushiki Kaisha | Liquid crystal display, active matrix substrate, liquid crystal panel, liquid crystal display unit, and television receiver |
JP5064515B2 (en) * | 2007-11-30 | 2012-10-31 | シャープ株式会社 | Liquid crystal display device, television receiver |
JP2012068573A (en) * | 2010-09-27 | 2012-04-05 | Toppan Printing Co Ltd | Thin film transistor array, image display device, and manufacturing method for the thin film transistor array |
US9335853B2 (en) | 2011-08-16 | 2016-05-10 | Samsung Display Co., Ltd. | Display device including sensor units and driving method thereof |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 19980331 |