JPH05109914A - Ultraviolet light erasing semiconductor device - Google Patents

Abstract

PURPOSE:To facilitate mounting on a memory card, an IC card, etc., by forming a substrate using 0.7mm or thinner concave non-translucent alumina, forming a cap using 0.5mm or thinner translucent alumina and permitting the thickness of the whole device to be 1.5mm or less. CONSTITUTION:On a substrate 12 formed of 0.7mm or thinner concave non- translucent alumina, a semiconductor element 11 is firmly fixed by adhesive 13 such as glass Ag paste and Al paste. A 0.15-0.5mm thick externally conducting lead 14 composed of 42 alloy, cobalt, etc., is formed in a desired shape before sealing and is firmly fixed in the periphery of the semiconductor element 11 on the substrate by low-melting point glass 15. A cap 16 formed of 0.15-0.5mm thick translucent alumina is firmly fixed on the lead 14 by the low-melting point glass 15 and the whole device is permitted to be 1.5mm or less. Thus, mounting on a memory card, an IC card, etc., is allowed.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION The present invention relates to a memory card and an IC.
The present invention relates to a thin structure ultraviolet erasable semiconductor device for a card.

[0002]

2. Description of the Related Art Various types of semiconductor devices have been used, but in recent years, there has been a great demand for semiconductor devices having a particularly thin thickness for mounting on a memory card, an IC card or the like.

However, conventionally, the ultraviolet erasing type semiconductor device is mainly a DIP type semiconductor device in which an ultraviolet transmitting glass is embedded in a part of a ceramic cap, and the whole thickness is large.

[0004]

DISCLOSURE OF THE INVENTION The above-mentioned conventional DIP
Since the type semiconductor device has a structure in which an ultraviolet transparent glass is embedded in a part of a ceramic cap, it is difficult to set the cap thickness to 0.8 mm or less in order to ensure airtightness. Since the total thickness is 2.5 to 4.0 mm, it cannot be mounted on thin products such as memory cards and IC cards.

[0005]

According to the present invention, a substrate on which an ultraviolet erasable memory semiconductor element is mounted, a cap mounted on the substrate so as to cover the semiconductor element, and a space between the substrate and the cap are provided. An ultraviolet erasable semiconductor device, comprising: a lead sandwiched between the two and extending to the outside and electrically connected to a semiconductor element, wherein the substrate has a thickness of 0.
An ultraviolet erasable semiconductor device is obtained which is made of light-transmissive alumina having a concave shape of 7 mm or less, and the cap is made of light-transmissive alumina of 0.5 mm or less and hermetically sealed with a low melting point glass.

[0006]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described with reference to the drawings.

FIG. 1 is a sectional view of an embodiment of the present invention, FIG.
FIG.

On a substrate (12) on which an ultraviolet erasable semiconductor element (11) is mounted and which has a thickness of 0.7 mm or less and is made of concave opaque alumina, glass Ag paste, Al
The semiconductor element (11) is fixed by an adhesive agent (13) such as paste, and a 0.05 to 0.20 mm-thick external lead (made of 42 alloy, Kovar, etc., on the substrate around the semiconductor element (11) ( 14) is shaped into a desired shape before sealing and is fixed by a low melting point glass (15).

A cap (16) made of translucent alumina having a thickness of 0.15 to 0.5 mm is fixed thereon by a low melting point glass (15) so that the total thickness becomes 1.5 mm or less. Composed.

[0010]

As described above, according to the present invention, 0.7
Since the substrate is made of non-translucent alumina having a concave shape of less than 0.5 mm and the cap is made of translucent alumina of 0.5 mm or less, the total thickness is 1.5 mm or less, and the surface mounting (SMT) is Since it is a possible SOP type, it can be easily mounted on a memory card, an IC card, etc., and the reliability is improved because it is hermetically sealed.

[Brief description of drawings]

1 is a cross-sectional view of the present invention.

FIG. 2 is a perspective view.

[Explanation of symbols]

 11 Ultraviolet Erasable Semiconductor Element 12,22 Substrate 13 Adhesive 14,24 Lead 15,25 Sealing Glass 16,26 Cap

Claims (1)

[Claims] 1. A substrate on which an ultraviolet erasable memory semiconductor element is mounted, a cap mounted on the substrate so as to cover the semiconductor element, and sandwiched between the substrate and the cap and extended to the outside. And a lead electrically connected to the semiconductor element, wherein the substrate is made of a non-translucent alumina having a concave shape with a thickness of 0.7 mm or less, and the cap has a thickness of 0 mm. 0.5 mm
An ultraviolet erasable semiconductor device, characterized in that the lead is shaped into a desired shape before encapsulation and has a total thickness of 1.5 mm or less.